Exchange bias in the IrMn/Co structures with alternative sequences of antiferromagnetic and ferromagnetic layers

The magnetic properties of Mo/IrMn/Co/Mo/SiO₂/Si structures with alternative sequences of the antiferromagnetic and ferromagnetic layers have been studied by measuring the angular dependence of the high-frequency radiation absorption in the ferromagnetic resonance region. The layers have been prepared by pulsed laser deposition in the absence of a magnetic field. It has been found that thermal annealing and cooling make it possible to create the exchange bias in the structure with the upper antiferromagnetic layer at a temperature much below the Néel temperature. At the same time, the identical heat treatment does not induce the exchange bias in the structure with the upper ferromagnetic layer. The possible mechanisms of the phenomena observed are discussed.     

Magnetic anisotropy in IrMn/Co structures with an alternative sequence of deposition of antiferromagnetic and ferromagnetic layers

The preparation conditions and the magnitudes of the uniaxial and unidirectional magnetic anisotropies of IrMn/Co structures with an alternative sequence of deposition of antiferromagnetic and ferromagnetic layers upon heat treatment and cooling in an external magnetic field have been investigated. It has been revealed that the unidirectional anisotropy (exchange bias) arises in the structure with an antiferromagnetic layer deposited on a ferromagnetic layer (TS structure) at an annealing temperature of higher than 100°C. In structures with a ferromagnetic layer deposited on an antiferromagnetic layer (BS structure), the exchange bias does not arise in the annealing temperature range under investigation. The possible factors responsible for this effect and the ratio between the temperature of the appearance of the exchange bias and the Néel temperature have been discussed.     

Exchange bias and negative magnetoresistance in [Co/Bi/Co]/IrMn thin films]

The artificial control of grain-boundary resistance and its contribution to magnetic and magneto-transport properties in [Co(3 nm)/Bi(2.5 nm)/Co(3 nm)]Ir₂₀Mn₈₀(12 nm) thin films that exhibit exchange bias is studied. Transverse magnetoresistance (MR) loops exhibit a negative MR in thin films grown by magnetron sputtering on Si/SiN_x(100 nm) substrates. This negative MR effect is of the giant-MR (GMR) type, although its magnitude is less than 1%. A considerable exchange bias (EB) effect is observed only at lower temperatures, where both, GMR and isothermal magnetization loops exhibit a shift of −600 Oe at 5 K.     

Exchange bias for ferromagnetic/antiferromagnetic bilayers with the uniaxial anisotropy being misaligned with the exchange anisotropy

Using the principle of minimal energy and S-W model, the exchange bias for ferromagnetic/antiferromagnetic bilayers has been investigated when the uniaxial anisotropy is misaligned with the exchange anisotropy. According to the relation between the energy of the bilayer and the orientation of ferromagnetic magnetization, it is found that the bilayer will be in the monostable state or bistable state when the external field is absent in the initial magnetization state. The monostable state or bistable state of the bilayer, which determines the angular dependence of exchange bias directly, is controlled by the competition between the exchange anisotropy and uniaxial anisotropy. When the applied field is parallel to the intrinsic easy axes and intrinsic hard axes, one of the switching fields of the hysteresis loop shows an abrupt change, while the other keep continuous by analyzing the magnetization reversal processes. Consequently, the exchange bias field and the coercivity will show a jump phenomenon. The numerical calculations indicate that both the magnitude and direction of the exchange anisotropy will significantly affect the angular dependence of exchange bias. The jump phenomenon of exchange bias is an intrinsic property of the bilayer, which is dependent on the interfacial exchange-coupling constant, the orientation of the exchange anisotropy, the thickness and uniaxial anisotropy constant of the ferromagnetic layer.     

Exchange bias in nearly perpendicularly coupled ferromagnetic/ferromagnetic system

Exchange bias phenomena appear not only in ferromagnetic/antiferromagnetic systems but also in ferromagnetic/ferromagnetic systems in which two layers are nearly perpendicularly coupled. We investigated the origin of the symmetry-breaking mechanism and the relationship between the exchange bias and the system's energy parameters. We compared the results of computational Monte Carlo simulations with those of theoretical model calculation. We found that the exchange bias exhibited nonlinear behaviors, including sign reversal and singularities. These complicated behaviors were caused by two distinct magnetization processes depending on the interlayer coupling strength. The exchange bias reached a maximum at the transition between the two magnetization processes.     

Exchange bias training effect in coupled all ferromagnetic bilayer structures

Exchange coupled bilayers of soft and hard ferromagnetic thin films show remarkable analogies to conventional antiferromagnetic/ferromagnetic exchange bias heterostructures. Not only do all these ferromagnetic bilayers exhibit a tunable exchange bias effect, they also show a distinct training behavior upon cycling the soft layer through consecutive hysteresis loops. In contrast with conventional exchange bias systems, such all ferromagnetic bilayer structures allow the observation of training induced changes in the bias-setting hardmagnetic layer by means of simple magnetometry. Our experiments show unambiguously that the exchange bias training effect is driven by deviations from equilibrium in the pinning layer. A comparison of our experimental data with predictions from a theory based upon triggered relaxation phenomena shows excellent agreement.     

Half-metallic exchange bias ferromagnetic/antiferromagnetic interfaces in transition-metal chalcogenides

To investigate half-metallic exchange bias interfaces, magnetic structures at ferromagnetic (FM)/antiferromagnetic (AFM) interfaces in the zinc blende transition-metal chalcogenides, and with compensated and uncompensated AFM interfaces, were determined by the full-potential linearized augmented plane-wave method. With the uncompensated AFM interface, an antiparallel alignment of the Cr and Mn moments induces an excellent half-metallicity. More striking still, in the compensated AFM interface the Cr moments in the FM layer lie perpendicular to the Mn moments in the AFM layer but the Mn moments strongly cant to induce a net moment so as to retain the half-metallicity. These findings may offer a key ingredient for exchange biased spintronic devices with 100% spin polarization, having a unidirectional anisotropy to control and manipulate spins at the nanoscale.     

Thickness dependence of positive exchange bias in ferromagnetic/antiferromagnetic bilayers

For the ferromagnetic (FM)/antiferromagnetic (AFM) bilayers, both negative and positive exchange bias H_E have been observed for low and high cooling field H_CF, respectively. The thickness dependence of H_E and coercivity H_C have been investigated for the cases of negative and positive H_E. It is found that the negative H_E and the positive one have similar FM thickness dependence that is attributed to the interfacial nature of exchange bias. However, the AFM thickness dependence of positive H_E is completely contrary to that of the negative one, which clearly demonstrates that the AFM spins play different roles for the cases of positive and negative H_E. In particular, the AFM thickness of positive H_E was first highlighted by an AFM spin canting model. These results should be attributed to the interfacial spin configuration after field cooling procedure.     

Temperature dependence of exchange bias and coercivity in ferromagnetic/antiferromagnetic bilayers

A model for the temperature dependence of exchange bias and coercivity in epitaxial ferromagnetic (FM)/ antiferromagnetic (AFM) bilayers is developed. In this model, the interface coupling includes two contributions, the direct coupling and the spin-flop coupling. The temperature dependence arises from the thermal disturbance to the system, involved in the thermal fluctuations of magnetization of AFM grains and the temperature modulation of the relevant magnetic parameters. In addition, the randomness of original orientations of easy axes of AFM grains after field cooling is taken into account. A self-consistent calculation scheme is proposed and numerical treatment is carried out. The results show that the temperature dependence of exchange bias and coercivity is closely related to the sizes of AFM grains and the interface exchange coupling constants. Especially, the exchange bias will have a peak and the blocking temperature will increase if the spin-flop coupling plays a role. On the other hand, the original orientation distribution of easy axes of AFM grains will affect exchange bias and coercivity prominently. The prediction has been well supported by experiments.Received: 12 May 2004, Published online: 31 August 2004PACS: 75.30.Et Exchange and superexchange interactions - 75.50.Ee Antiferromagnetics - 75.30.Gw Magnetic anisotropy     

The structure dependence of exchange bias in ferromagnetic/antiferromagnetic bilayers

The structure dependence of exchange bias in ferromagnetic/antiferromagnetic （FM/AF） bilayers has been investigated in detail by extending Slonczewski＇s ＇proximity magnetism＇ idea. Here three important parameters are discussed for FM/AF bilayers, i.e. interracial bilinear exchange coupling J1, interracial biquadratic （spin-flop） exchange coupling J2 and antiferromagnetic layer thickness tAF. The results show that both the occurrence and the variety of the exchange bias strongly depend on the above parameters. More importantly, the small spin-flop exchange coupling may result in an exchange bias without the interracial bilinear exchange coupling. However, in general, the spin-flop exchange coupling cannot result in the exchange bias. The corresponding critical parameters in which the exchange bias will occur or approach saturation are also presented.     

Exchange bias effects in ferromagnetic wires

We have investigated the exchange bias effect in micron-sized ferromagnetic wires made from Co and Ni₈₀Fe₂₀ films. The wires were fabricated using optical lithography, metallization by sputtering and lift-off technique. Magnetotransport measurements were performed at temperatures ranging from 3 to 300 K. We observed marked changes in the magnetoresistance (MR) properties as the temperature is varied. At 300 K, the field at which the sharp peak occurs corresponding to the magnetization reversal of the Co wires is 167 Oe and is symmetrical about the origin. As the temperature was decreased to 3 K, we observed a shift in the peak positions of the MR characteristics for both the forward and reverse field sweeps corresponding to a loop shift of 582 Oe in the field axis. The asymmetric shift in the MR loops at low temperatures clearly indicates the exchange bias between ferromagnetic (Co) and antiferromagnetic parts (Co-oxide at the surfaces) from natural oxidation. Ni₈₀Fe₂₀ wires of the same geometry showed similar effect with a low exchange bias field. The onset of exchange biasing effect is found to be 70 and 15 K for the Co and Ni₈₀Fe₂₀ wires, respectively. A striking effect is the existence of exchange biasing effect from the sidewalls of the wires even when the wires were capped with Au film.     

Numerical study of exchange bias in antiferromagnetic/ferromagnetic core/shell nanoparticles with non-magnetic defects

We perform Monte Carlo simulations for an antiferromagnetic/ferromagnetic core/shell nanoparticle with a doubly inverted structure. We investigate the dependence of the exchange bias field and coercivity on the magnetic dilution of the shell-interface and shell part. It is demonstrated that exchange bias and coercivity can exhibit monotonic or non-monotonic behavior depending on the location of the non-magnetic components. Also, temperature dependence of the exchange bias and coercivity of the system are studied for a particular defect concentration value. Our results provide an alternative way for tunning the magnetic properties of doubly inverted nanoparticles.     

Magnetism in structures with ferromagnetic and superconducting layers

The influence of superconductivity on ferromagnetism in the layered Ta/V/Fe_1–x V _x /V/Fe_1–x V _x /Nb/Si structures consisting of ferromagnetic and superconducting layers is studied using polarized neutron reflection and scattering. It is experimentally shown that magnetic structures with linear sizes from 5 nm to 30 μm are formed in these layered structures at low temperatures. The magnetization of the magnetic structures is suppressed by superconductivity at temperatures below the superconducting transition temperatures in the V and Nb layers. The magnetic states of the structures are shown to undergo relaxation over a wide magnetic-field range, which is caused by changes in the states of clusters, domains, and Abrikosov vortices.     

Dependence of exchange bias on core/shell relative dimension in ferromagnetic/antiferromagnetic nanoparticles

We employ a modified Metropolis Monte Carlo simulation to study the effect of bimagnetic core/shell relative dimension on exchange bias in ferromagnetic/antiferromagnetic nanoparticles. The exchange bias field is inversely proportional to the ferromagnetic shell thickness in the antiferromagnetic (core)/ferromagnetic (shell) nanoparticles, while in the nanoparticles with an opposite core/shell structure the exchange bias behavior is complex and distinguished in different ranges of the ferromagnetic core radius. The work elucidates unambiguously how the core and shell dimensions optimize the exchange bias in nanoparticles.     

Effects of Cu dilution in IrMn on the exchange bias of CoFe/IrMn bilayers

The effect of nonmagnetic dilution in metallic antiferromagnets (AFMs) on the exchange bias (EB) has been investigated from a structural, magnetic, and Monte Carlo simulation point of view in bilayers of CoFe/(IrMn)1-xCux. Dilution by Cu atoms throughout the volume of the AFM IrMn gives rise to an enhanced EB field (HEB) for 5 K相似文献   

Angular and NiFe thickness dependence of exchange bias in IrMn/NiFe/IrMn thin film

Exchange biased IrMn/NiFe/IrMn thin films were studied as a function of NiFe thickness. In plane angular dependence of a resonance field distribution which is measured by FMR was analyzed as a combined effect of an unidirectional anisotropy and an uniaxial anisotropy. The unidirectional anisotropic field and the uniaxial anisotropic field were linearly varied with NiFe thickness while the films with a thicker NiFe layer do not follow the linear variation. Resonance field and linewidth variations were also analysed with NiFe thickness.     

Investigation of ferromagnetic coupling between Co layers in a Co/Pt multilayer with perpendicular anisotropy

The coercivity of a Co/Pt multilayer with out-of-plane anisotropy can be lowered greatly if it is grown onto an ultrathin NiO underlayer . By making use of this characteristic, a series of samples glass/NiO(10 Å)/[Co(4 Å)/Pt(5 Å)]₃/Pt(x Å)/[Co(4 Å)/Pt(5 Å)]₃ with different Pt spacer thickness have been prepared to determine the ferromagnetic (FM) coupling between Co layers across the Pt layer. The measurements of major and minor hysteresis loops have shown that the FM coupling between the top and bottom Co/Pt multilayers decreases monotonically with the Pt layer thickness and disappears above the Pt layer thickness of 40 Å. This thickness of 40 Å is much larger than that in the literature. In addition to the FM coupling between the top and bottom Co/Pt multilayers across the Pt spacer, there exists a weak biquadratic coupling, which induces the broad transition of the bottom Co/Pt multilayer.