Enhancement of superconducting critical temperature due to metal-semiconductor transition

It is pointed out that there exists a qualitative agreement between the occurrence of high-temperature superconductivity in oxide systems (perovskite and layered perovskite structures) and the author's earlier theoretical predictions of superconductivity in the model of metal-insulator transition (partly contained in the book: High-temperature superconductivity). Here a brief account of the published results is given and attention is paid to some properties of such superconductors.     

Enhancement of superconducting transition temperature due to the strong antiferromagnetic spin fluctuations in the noncentrosymmetric heavy-fermion superconductor CeIrSi3: A 29Si NMR study under pressure

We report a (29)Si NMR study on the pressure-induced superconductivity (SC) in an antiferromagnetic (AFM) heavy-fermion compound CeIrSi(3) without inversion symmetry. In the SC state at P = 2.7-2.8 GPa, the temperature (T) dependence of the nuclear-spin lattice relaxation rate 1/T(1) below T(c) exhibits a T(3) behavior without any coherence peak just below T(c), revealing the presence of line nodes in the SC gap. In the normal state, 1/T(1) follows a square root T-like behavior, suggesting that the SC emerges under the non-Fermi-liquid state dominated by AFM spin fluctuations enhanced around a quantum critical point. The reason why the maximum T(c) in CeIrSi(3) is relatively high among the Ce-based heavy-fermion superconductors may be the existence of the strong AFM spin fluctuations. We discuss the comparison with the other Ce-based heavy-fermion superconductors.     

Effective Lorentz force due to small-sngle impurity scattering: magnetotransport in high- Tc superconductors

We show that a scattering rate which varies with angle around the Fermi surface has the same effect as a periodic Lorentz force on magnetotransport coefficients. This effect, together with the marginal Fermi liquid inelastic scattering rate, gives a quantitative explanation of the temperature dependence and the magnitude of the observed Hall effect and magnetoresistance with just the measured zero-field resistivity as input.     

Enhancement of the superconducting transition temperature of La2-xSrxCuO4 bilayers: role of pairing and phase stiffness

The superconducting transition temperature T(c) of bilayers comprising underdoped La(2-x)Sr(x)CuO(4) films capped by a thin heavily overdoped metallic La(1.65)Sr(0.35)CuO(4) layer, is found to increase with respect to T(c) of the bare underdoped films. The highest T(c) is achieved for x=0.12, close to the "anomalous" 1/8 doping level, and exceeds that of the optimally doped bare film. Our data suggest that the enhanced superconductivity is confined to the interface between the layers. We attribute the effect to a combination of the high pairing scale in the underdoped layer with an enhanced phase stiffness induced by the overdoped film.     

Unstable flux flow due to heated electrons in superconducting films

A flux instability occurs in superconductors at low temperatures, where e-e scattering is more rapid than e-ph, whereby the dissipation significantly elevates the electronic temperature while maintaining a thermal-like distribution function. The reduction in condensate and rise in resistivity produce a nonmonotonic current-voltage response. In contrast to the Larkin-Ovchinnikov instability where the vortex shrinks, in this scenario the vortex expands and the quasiparticle population rises. Measurements in Y(1)Ba(2)Cu(3)O(7-delta) agree quantitatively with the distinct predictions of this mechanism.     

Nernst effect in Tl-Ba-Ca-Cu-O superconducting films due to infrared laser heating

A Nernst effect has been observed in a high temperature superconductor for the first time. Irradiating superconducting Tl–Ba–Ca–Cu–O thin films by short pulses of a TEA-CO₂ laser, a photovoltaic signal is detected perpendicular to a magnetic field applied parallel to the film surface. The signal is attributed to magnetic flux line depinning and flux line transport driven by the laser induced temperature gradient. The results are described by thermal flux line activation leading to a calculated distribution of pinning energies from 100 K to 4000 K.     

Enhancement of the superconducting transition temperature in Nb/permalloy bilayers by controlling the domain state of the ferromagnet

In (S/F) hybrids the suppression of superconductivity by the exchange field h(ex) of the ferromagnet can be partially lifted when different directions of h(ex) are sampled simultaneously by the Cooper pair. In F/S/F trilayers where the magnetization directions of the F layers can be controlled separately, this leads to the so-called spin switch. Here we show that domain walls in a single F layer yield a similar effect. We study the transport properties of Ni(0.80)Fe(0.20)/Nb bilayers structured in strips of different sizes. For large samples a clear enhancement of superconductivity takes place in the resistive transition, in the very narrow field range (order of 0.5 mT) where the magnetization of the Py layer switches and many domains are present. This effect is absent in microstructured samples.     

Low-temperature magnetoresistance due to weak localization in lightly doped semiconductors

The first observation of low-temperature magnetoresistance (MR) of interference nature in the case of a light doping is reported. The MR occurs in n- and p-type Ge samples at a frequency of 10 GHz at temperatures below 30 K in weak magnetic fields on the background of the classical MR effect associated with electrons in different valleys (n-Ge) and with heavy and light holes (p-Ge).     

Wake effect in doped graphene due to moving external charge

We use the dielectric-response formalism to evaluate the induced density of charge carriers in supported graphene due to an external moving charged particle in terms of its velocity and distance from graphene for several equilibrium charge carrier densities due to graphene doping. We show that, when the particle speed exceeds a threshold value, an oscillatory wake effect develops in the induced charge density trailing the particle. Strong effects are observed in the wake pattern due to finite size of the graphene–substrate gap, as well as due to strong coupling effects, and plasmon damping of graphene?s π electrons.     

Enhancement in specific heat due to anion impurities in KCl

The specific heats of KCl containing respectively 5% KBr and 1.8% Kl, have been computed at various temperatures by Green's function technique. For the computation of specific heat, we have considered the vibrations of impurity and all its nearest neighbours, i.e., seven atoms defect space. A simple lattice dynamical model including a change of mass and a change in short-range interactions has been used in the computations. The computed results have been compared with the experimental results of Karlson for KCl:Br system and Kvavadze et al. for KCl:I system. A good agreement is found between them.     

Enhancement of the superconducting transition temperature near a phase instability in NaxWO3

The superconducting transition temperature of tetragonal I sodium tungsten bronze (Na_xWO₃) has been found to increase rapidly as the x-value is decreased to the metal-semiconductor phase transition. It is suggested that a soft mode instability is responsible for the increased electron-phonon interaction near the phase transition.     

Enhancement of persistent currents due to confinement in metallic samples

Confinement and surface roughness (SR) effects on the magnitude of the persistent current are analyzed for ballistic bidimensional metallic samples. Depending on the particular geometry, localized border states can show up at half-filling. These border states contribute coherently to the persistent current and its magnitude is enhanced with respect to their value in the absence of confinement. A linear scaling of the typical current I(typ) with the number of conduction channels M is obtained. This result is robust with respect to changes in the relevant lengths of the samples and to the SR. Possible links of our results to experiments are also discussed.     

Enhancement of electrical conductivity in MgO due to lithium impurities

The electrical conductivity of lithium-doped MgO crystals at room temperature is shown to be enhanced by the thermal creation of stable [Li]⁰ defects by oxidation at elevated temperatures. The current-voltage curves are found to be nonlinear at low voltages. The enhancement in conductivity is attributed to localized regions of high [Li]⁰ concentration in which the holes at the [Li]⁰ sites are thermally ionized into the valence band, causing these regions to be semiconducting.