Switching and memory effects governed by the hopping mechanism of charge carrier transfer in composite films based on conducting polymers and inorganic nanoparticles

The switching and memory effects in composite films based on conducting polymers [poly(phenylenevinylene), thiophene, and carbazole derivatives] and inorganic nanoparticles (ZnO, Si) are investigated. It is established that the introduction of inorganic nanoparticles (ZnO, Si) exhibiting strong acceptor properties into polymer materials leads to the appearance of memory effects, which manifest themselves in the transition of the polymer from a low-conductivity state to a high-conductivity state. For a number of composites, this transition is accompanied by the formation of a region with a negative differential resistance and a hysteresis in the current-voltage characteristics. It is demonstrated that the observed effects are determined by the mechanism of charge carrier transfer in the composite. In particular, the main mechanism of transport in films based on thiophene derivatives is associated with electrical conduction due to the tunneling of charge carriers between conducting regions embedded in a nonconducting matrix, whereas the dominant mechanism of transport in “polymer-semiconductor nanoparticle” composite films is hopping conduction, which is responsible for the effects observed in these objects.     

Ferromagnetism in transition-metal-doped semiconducting oxide thin films

A rather complete work on transition-metal (TM)-doped TiO₂ thin films has been done and room ferromagnetism (FM) is found in the whole series of Sc/V/Cr/Mn/Fe/Co/Ni-doped TiO₂ films. Not only is it remarkable that for the first time, FM at high temperature was achieved in TM-doped TiO₂, but also a very big magnetic moment of 4.2μ_B/atom could be obtained, and direct evidences of real ferromagnets with big domains were shown as well. A similar chemical trend was achieved in TM-doped In₂O₃ films, however, the observed magnetic moment is rather modest, with the maximal value is of only 0.7μ_B/atom for Ni-doped In₂O₃ films. As regards TM-doped SnO₂ films, observed magnetic moments could be very large, with the maximum saturation of 6μ_B per impurity atom for Cr-doped SnO₂ thin films, but it could be influenced very much depending on substrate types. On the other hand, results on TM-doped ZnO films interestingly have revealed that in these systems, the magnetism more likely resulted from defects and/or oxygen vacancies.     

Synthesis and characterization of nanocomposites films with graphene oxide and reduced graphene oxide nanosheets

Graphene oxide (GO) and reduced graphene oxide (CRGO), as a graphene derivatives, possess unique properties and a high aspect ratio, indicating great potential in nanocomposite fields. The present work reports the fabrication of the nanocomposite films by a simple and environmentally friendly process using aqueous solution and optimized time sonication for better exfoliation of the graphene sheets within Poly(Vinyl alcohol) (PVA) as matrix. The films were characterized using high-resolution TEM (HRTEM), X-ray diffraction (XRD), Microtensile testing, Differential scanning calorimetry (DSC) and Thermogravimetric analysis (TGA). The TEM images revealed a successfully exfoliation of the GO/CRGO nanosheets. XRD combined with TGA and DSC measurements showed an improvement in the thermal stability and tunable thermal properties. In addition, the Young's modulus and tensile yield strength of the composite films containing 1 wt% GO were obtained to be 4.92 GPa and 66 MPa respectively. These excellent reinforcement effects were achieved by the strong interaction between the components.     

Switching effects in composite films based on the conjugated polymer polyfluorene and ZnO nanoparticles

The S- and N-shaped current—voltage characteristics have been studied for composite films of the conjugated polymer polyfluorene and ZnO nanoparticles deposited onto Al and In₂O₃/SnO₂ electrodes with and without an intermediate sublayer of the conducting polymer PEDT/PSS. The differences in the current— voltage characteristics of the systems (the N- and S-types, respectively) are interpreted using the electro-thermal switching model, which takes into account the structural and electric properties of PEDT/PSS. The switching provides both alignment of polymer molecules and tunneling of charge carriers, which leads to an increase in conductivity. The current flow in this structure causes an increase in temperature of conducting channels; when the temperature reaches certain levels, the conductivity of the channels decreases because the alignment of polymer molecules is upset, which creates an N-shaped form of the current—voltage characteristics.     

The Kondo effect in reduced graphene oxide films

The influence of spin in reduced graphene oxide (RGO) is demonstrated through a temperature dependent metal–insulator transition in resistance (at ～30 K) as well as high field magneto‐resistance (MR) measurements. RGO samples, prepared using an unconventional organic acid reduction method, showed a quadratic temperature dependence of resistance at low temperatures, which changed to a logarithmic dependence at higher temperatures. Analysis of these features in RGO, combined with negative MR which scales with a Kondo characteristic temperature, establishes the interaction between conduction electrons propagating through intact graphene nano‐islands and localized magnetic moments found in disordered regions. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Magnetoelectric oxide films for spin manipulation in graphene

The challenge of creating a graphene spin field effect transistor (spin‐FET) demands a magnetic gate dielectric material whose magnetization can be switched electrically. We have grown films of Cr₂O₃ on top of graphite and graphene by pulsed laser deposition that shows this crucial functionality. We demonstrate that the Cr₂O₃ films are magnetoelectric by poling them in combined electric and magnetic fields and then using magnetic force microscopy to observe spontaneous surface domain structure as a function of poling field. In addition, we show that the electric field created by a conducting AFM tip can be used to write magnetic patterns in the film that demonstrate the kind of continuous magnetoelectric control needed for a prototype spin‐FET. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

溶胶-凝胶VO2薄膜转换特性研究

利用溶胶凝胶法在SiO2Si衬底上沉积高取向的V2O5薄膜,在压强低于2Pa,温度高于400℃的条件下,对V2O5薄膜进行真空烘烤,获得了电阻率变化3个数量级以上、弛豫宽度为62℃的VO2多晶薄膜.以X射线衍射(XRD)、扫描电子显微镜(SEM)图和电阻率转换特性等实验结果为依据,详细分析了溶胶凝胶薄膜在真空烘烤时从V2O5向VO2的转化,它经历了从VnO2n+1(n=2,3,4,6)到VO2的过程.实验证明,根据选择合适的成膜热处理条件和真空烘烤条件是实现溶胶凝胶V2O5结构向VO2结构成功转换的关键 关键词： 溶胶-凝胶法 氧化钒薄膜 VO2膜转换特性     

Carbon nanotube transistors with graphene oxide films as gate dielectrics

Carbon nanomaterials,including the one-dimensional(1-D) carbon nanotube(CNT) and two-dimensional(2-D) graphene,are heralded as ideal candidates for next generation nanoelectronics.An essential component for the development of advanced nanoelectronics devices is processing-compatible oxide.Here,in analogy to the widespread use of silicon dioxide(SiO2) in silicon microelectronic industry,we report the proof-of-principle use of graphite oxide(GO) as a gate dielectrics for CNT field-effect transistor(FET) via a...     

Synthesis of graphene/nickel oxide composite with improved electrochemical performance in capacitors

A novel reduced graphene oxide/NiO nanosheet composite (r-GO/NiO) (ca. 75 % NiO in weight) was synthesized by a facile two-step method, where the NiO nanosheets were decorated with some voids. The composite was characterized by using X-ray diffraction, transmission electron microscopy, thermal gravimetric analysis, and Raman spectroscopy. The electrochemical properties of the composite were investigated by cyclic voltammetry, galvanostatic charge, and discharge measurements. The results show that the r-GO/NiO composite exhibits a stable average specific capacitance of ca. 1,139 F g^?1 (at 0.5 A g^?1) during 1,000 charge–discharge cycles, suggesting that the r-GO/NiO composite is a potential supercapacitor material. The main correlation between the electrochemical performance and the structure of the materials was studied, and the formation process of the composite was also discussed.     

Switching effects in superconductor/ferromagnet/superconductor graphene junctions

The Josephson effect in the superconductor/ferromagnet/superconductor （SFS） graphene Josephson junction is studied using the Dirac Bogoliubov-de Gennes （DBdG） formalism. It is shown that the SFS graphene junction drives 0–π transition with the increasing of p=h0L/vF？, which captures the effects of both the exchange field and the length of the junction; the spin-down current is dominant. The 0 state is stable for p 〈 pc （critical value pc ≈ 0.80） and the π state is stable for p 〉 pc, where the free energy minima are at φg=0 and φg=π, respectively. The coexistence of the 0 and π states appears in the vicinity of pc.     

Real-time monitoring of graphene oxide reduction in acrylic printable composite inks

This work reports the electrical characterization of a water-based graphene oxide/acrylic composite material, which was directly inkjet printed to fabricate dissipative patterns. The graphene oxide filler, which is strongly hydrophilic due to its heavily oxygenated surface and can be readily dispersed in water, was reduced by UV irradiation during photo-curing of the polymeric matrix. The concurrent polymerization of the acrylic matrix and reduction of graphene oxide filler was demonstrated by real-time resistance measurements during UV light irradiation. The presence of graphene filler allowed decreasing the resistance of the pure polymeric matrix by nearly five orders of magnitude. This was explained by the fact that clusters of reduced graphene oxide inside the polymer matrix act as preferential pathways for the mobility of charge carriers, thus leading to an overall decrease of the material’s resistance.     

高度取向的半导体聚合物薄膜的溶液浸涂法生长及其电荷传输特性研究

有效地控制有机半导体分子取向和堆积特性对实现高性能电子器件具有非常重要的意义,而发展简便高效的溶液相成膜技术是实现这一目的的重要途径.本文采用改进的溶液浸涂法,成功地成长出大面积宏观取向的半导体聚合物P(NDI2OD-T2)和PTHBDTP薄膜.偏光显微镜和极化的紫外-可见光吸收谱测量显示,薄膜中聚合物分子主链骨架沿成膜时液面下移方向择优取向.原子力显微镜观察到聚合物薄膜由纳米尺度的取向有序晶畴构成,畴的取向与分子链的取向一致.采用衬底-溶液界面处表面张力和溶剂蒸发诱导的分子自组织过程来解释浸涂法生长聚合物取向薄膜的微观机理.使用取向的P(NDI2OD-T2)薄膜制备场效应晶体管,显著地提高了电子迁移率(可达4倍),并实现高达19的迁移率各向异性度.这可归因于共轭的聚合物主链骨架择优取向引起电荷传导通路的变化.     

Synthesis and characterization of graphene oxide,reduced graphene oxide and their nanocomposites with polyethylene oxide

This work describes the synthesis of GO, rGO and their nanocomposites with PEO. GO and rGO were prepared by the modified Hummers method and in-situ reduction of GO utilizing green reductant L (+) Ascorbic acid. The nanocomposites were characterized by Fourier-transform infrared spectroscopy (FT-IR), X-ray powder diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), Thermogravimetric Analysis (TGA), and Universal Testing Machine (UTM). FT-IR and XRD confirmed the synthesis of GO and rGO. FE-SEM confirmed the uniformly exfoliated GO and rGO nanosheets in the polymer matrix. Hydrogen bonding was the main interaction mechanism for GO with PEO while no interaction was detected by FT-IR for rGO. Enhanced thermal stability was observed for both GO/PEO and rGO/PEO nanocomposites. The mechanical analysis showed an increase in Young's modulus, tensile strength, and elongation at break for GO/PEO nanocomposites, which is attributed to the homogeneous dispersion and hydrophilic hydrogen bonding interaction of GO with PEO.     

Electromagnetic interference shielding effectiveness of reinforced composite with graphene oxide-lead oxide hybrid nanosheets

ABSTRACT

The rapid development of telecommunication devices and related technologies improved the distribution of electromagnetic (EM) waves within the environment, which can adversely affect the performance of electronic systems and put the life of living species in serious danger; thus, practical alternatives are required to protect vulnerable sources from them. To address this demand, we developed reinforced composites with graphene oxide (GO)-lead oxide (GO-Pb₃O₄) hybrid 2D nanosheets at diverse filler loadings by employing the vacuum shock technique. Next, the developed fillers and composites were well characterized by the diverse analysis methods and their electromagnetic interference shielding effectiveness (EMI SE) was evaluated and compared with their X-ray shielding performance. The obtained results showed that the developed composites can perfectly attenuate X-ray waves and weaken the total power of applied EM waves (in X-band frequency (8.2–12.4 GHz)) more than 50%. In this regard, a 6 mm thick specimen containing 10?wt% GO-Pb₃O₄ attenuated emitted X-ray waves equal to 4.06, 4.83 and 3.91?mmAl at 40, 60 and 80?kVp energies, which shows about 124%, 124% and 121% increase, respectively, in the X-ray attenuation compared with neat epoxy resin. These results indicated that developed composites are perfect candidates to protect vulnerable sources from diverse EM sources, and despite the insulative nature of the GO-Pb₃O₄, these hybrid nanosheets can act as a potential barrier against EM waves.     

Effect of distance between acceptor and donor on optical properties of composite semiconducting polymer films

The excitation energy transfer from poly(N-vinylcarbazole) (PVK) to tris(8-hydroxyquinoline) aluminum (Alq₃) in composite films was investigated by adding an inert polymer, poly(methyl methacrylate) (PMMA). The energy transfer efficiency calculated from the photoluminescence (PL) excitation spectra is consistent with that from the time-resolved PL decay data of the composite films. We have found a linear relationship between the two kinds of the distances, which are calculated according to volume density and the Förster theory. Experimental results and analyses provide a facile method to infer the energy transfer efficiency and the distance between the donor and the acceptor molecules in the composite films.     

A comparative analysis of graphene oxide films as proton conductors

The electrical conductivity of graphene oxide (GO) films in vapors of water and acid solutions is found to be close to the conductivity of a film formed after drying the solution of phenol-2,4-disulfonic acid in polyvinyl alcohol, which is known to be a proton conductor. We found that the conductivity of a GO film in vapors of the H₂O–H₂SO₄ electrolyte possesses a sharp maximum at ~1 % by weight of sulfuric acid. The highest conductivity of GO films can be expected when placing the films over acid vapors where the acid concentration is essentially lower than in the acid solutions at their maximum conductivity. Since the conductivity of the H₂O–H₂SO₄ electrolyte itself has a maximum at ~30 % by weight of sulfuric acid, the use of intermediate concentrations of H₂SO₄ is recommended in practical applications. The GO films permeated with water or acid solution in water are expected to possess the proton-exchange properties similar to those of other proton-exchanging membranes.     

Magnetooptical study of granular silicon oxide films with embedded CoNbTa ferromagnetic particles

Granular silicon oxide films with embedded CoNbTa ferromagnetic particles and different relative contents of the metal and dielectric phases were studied using both steady-state and dynamic magnetooptical techniques with subpicosecond time resolution. Measurements were conducted in the spectral interval from 1.45 to 1.70 eV. The concentration dependences of the linear and photoinduced Kerr effects were found to behave similarly. Both relations are nonmonotonic with a maximum lying near the percolation threshold.