Reel-to-reel fabrication of meter-long YBCO coated conductor

YBa₂Cu₃O_7?δ (YBCO) superconductors were coated on the CeO₂/YSZ/Y₂O₃ buffered Ni-5at%W tapes by a reel-to-reel pulsed laser deposition (PLD). The process of a multi-layer deposition of YBCO film was explored. X-ray diffraction texture measurements showed good both in-plane and out of plane crystalline orientations in YBCO films. The average values calculated at a full width at half maximum (FWHM) of the peaks from phi-scans (φ) and omega (ω) scans for one meter-long YBCO tape were 7.49° and 4.71°, respectively. The critical current (I_c) was over 200 A/cm-width at 77 K and under self-field for meter-long YBCO tape. The critical transition temperature of the YBCO tape was typically as 90.1 K with 0.5 K transition widths.     

Epitaxial growth of Ce2Y2O7 buffer layers for YBa2Cu3O7−δ coated conductors using reel-to-reel DC reactive sputtering

Biaxially textured Ce₂Y₂O₇ (CYO) films were deposited on Ni–5at.%W (Ni–5W) tapes by a DC reactive sputtering technique in a reel-to-reel system. Subsequent YBa₂Cu₃O_7?δ (YBCO) films were prepared using pulsed laser deposition leading to a simplified coated conductor architecture of YBCO/CYO/Ni–5W. X-ray diffraction measurements revealed an epitaxial growth of the CYO buffer layer with a texture spread down to 2.2° and 4.7° for the out-of-plane and in-plane alignment, respectively. Microstructural investigations showed a dense, smooth and crack-free surface morphology for CYO film up to a thickness of 350 nm, implying an effective suppression of cracks due to the incorporation of Y in CeO₂. The superconducting transition temperature T_c of about 90 K with a narrow transition of 0.8 K and the inductively measured critical current density J_c of about 0.7 MA/cm² indicate the potential of the single CYO buffer layer.     

A simple MOD method to grow a single buffer layer of Ce0.8Gd0.2O1.9 (CGO) for coated conductors

A single Ce_0.8Gd_0.2O_1.9 (CGO) buffer layer was successfully grown on the home-made textured Ni–5 at.%W (Ni–5W) substrates for YBCO coated conductors by a simple metal–organic deposition (MOD) technique. The precursor solution was prepared using a newly developed process and only contained common metal–organic salts of both Ce and Gd dissolved into a propionic acid solvent. The precursor solution at 0.4 M concentration was spin coated on short samples of Ni–5W substrates and heat-treated at 1100 °C in a mixture gas of 5% H₂ in Ar for an hour. X-ray studies indicated that the CGO films had good out-of-plane and in-plane textures with full-width-half-maximum values of 4.18° and 6.19°, respectively. Atomic force microscope (AFM) investigations of the CGO films revealed that most of the grain boundary grooves on the Ni–5W surface were found to be well covered by CGO layers, which had a fairly dense and smooth microstructure without cracks and porosity. These results indicate that our MOD technique is very promising for further development of single buffer layer architecture for YBCO coated conductors, due to its low cost and simple process.     

Modified Lanthanum Zirconium Oxide buffer layers for low-cost,high performance YBCO coated conductors

The pyrochlore Lanthanum Zirconium Oxide, La₂Zr₂O₇ (LZO), has been developed as a potential replacement barrier layer in the standard RABiTS three-layer architecture of physical vapor deposited CeO₂ cap/YSZ barrier/Y₂O₃ seed on Ni–5%W metal tape. The main focus of this research is to ascertain whether: (i) we can further improve the barrier properties of LZO; (ii) we can modify the LZO cation ratio and still achieve a high level of performance; and (iii) it is possible to reduce the number of buffer layers. We report a systematic investigation of the LZO film growth with varying compositions of La:Zr ratio in the La₂O₃–ZrO₂ system. Using a metal–organic deposition (MOD) process, we have grown smooth, crack-free, epitaxial thin films of La_xZr_1?xO_y (x = 0.2–0.6) on standard Y₂O₃ buffered Ni–5W substrates in short lengths. Detailed XRD studies indicate that a single epitaxial LZO phase with only (0 0 1) texture can be achieved in a broad compositional range of x = 0.2–0.6 in La_xZr_1?xO_y. Both CeO₂ cap layers and MOD–YBCO films were grown epitaxially on these modified LZO barriers. High critical currents per unit width, I_c of 274–292 A/cm at 77 K and self-field were achieved for MOD–YBCO films grown on La_xZr_1?xO_y (x = 0.4–0.6) films. These results indicate that LZO films can be grown with a broad compositional range and still support high performance YBCO coated conductors. In addition, epitaxial MOD La_xZr_1?xO_y (x = 0.25) films were grown directly on biaxially textured Ni–3W substrates. About 3 μm thick YBCO films grown on a single MOD–LZO buffered Ni–3W substrates using pulsed laser deposition show a critical current density, J_c, of 0.55 MA/cm² (I_c of 169 A/cm) at 77 K and 0.01 T. This work holds promise for a route for producing simplified buffer architecture for RABiTS based YBCO coated conductors.     

Conductivity of SnP2O7 and In-doped SnP2O7 prepared by an aqueous solution method

SnP₂O₇ and In-doped SnP₂O₇ have been prepared by an aqueous solution method using (NH₄)₂HPO₄ as phosphorous source. It was found that the solid solution limit in Sn_1 ? xIn_x(P₂O₇)_1 ? δ was at least x = 0.12. All pyrophosphates in the Sn_1 ? xIn_x(P₂O₇)_1 ? δ (x ≤ 0.12) series exhibit 3 × 3 × 3 superlattice structures. The conductivities of Sn_0.92In_0.08(P₂O₇)_1 ? δ in air are 6.5 × 10^? 6 and 8.0 × 10^? 9 S/cm at 900 and 400 °C, respectively, when prepared by an aqueous solution method and annealed at 1000 °C. The conductivity of undoped SnP₂O₇ is slightly lower. However, it was also found that the low-temperature conductivities of pyrophosphates annealed only at 650 °C are several orders of magnitude higher than those annealed at 1000 °C, which could be related to a trace amount of an amorphous secondary phase. The peak conductivity was in this case observed at around 250 °C, which is the same temperature as previously observed in In-doped SnP₂O₇ although the conductivity is still three orders of magnitude lower in the present study. These differences can be related to large differences in particle size and morphology, and all in all, the conductivities of SnP₂O₇-based materials are very sensitive to the synthetic history.     

Texture analysis of RF-sputtered CeO2 buffer layers and superconducting MOD-YBCO films

CeO₂ buffer layers were deposited on YSZ single-crystal substrates using an RF-sputtering method. The development of crystalline textures of sputtered CeO₂ films at different sputtering pressure and their effects on YBCO films, deposited by Metal Organic Deposition (MOD), were investigated. Both CeO₂ and subsequent YBCO films grew well epitaxially. The relative XRD peak intensities of CeO₂ (2 0 0) to substrate YSZ (2 0 0) increased with deposition pressure in the range of 3–5 mTorr and were inversely proportional to the θ–2θ scan FWHM values of CeO₂ (2 0 0). Also, the reaction layers of BaCeO₃ were thicker in the samples with lower CeO₂ (2 0 0) intensities and poor out-of-plane alignment when CeO₂ were deposited at the lower pressure of 3.3 mTorr. It is noted, however, that the superconducting layer grew well epitaxially on these BaCeO₃ layers, possibly due to the epitaxial relation between CeO₂ and YBCO. The superconducting critical currents of MOD-YBCO films showed an increasing tendency as both the Δ2θ (CeO₂) and BaCeO₃ peak intensities decreased.     

Grain size of nanocrystalline YSZ buffer layers fabricated by ion beam deposition

Amorphous or nanocrystalline thin films are capable to be efficient diffusion barrier layers for YBCO coated conductors of ion beam assisted deposition route. Nanocrystalline Yttria-Stabilized Zirconia (YSZ) buffer layers were fabricated by the ion beam deposition. Kr and Ar gases were utilized for the dual Kaufman type sputtering ion sources sequently. Both of the ion beams were fixed at 200 mA, while the ion energy was in the range of 450–2000 eV. The thickness of the YSZ buffer layers was several hundreds of nanometers. The grain size of YSZ thin films, which varied from 2 to 20 nm, was calculated by Scherrer Formulation based on the X-ray diffraction measurement results. The grain size always decreased at first and then increased when the ion energy was increased. In the cases Kr gas was utilized and Ar gas was utilized, the grain size reached its minimum value at the ion energy of about 1800 eV and 1000 eV, respectively. Such phenomenon was discussed using the thermodynamic theory of thin film nucleation. Deposition rate and substrate temperature were the two chief variables of the critical nuclei concentration and grain size.     

Thermal diffusivity measurement of YBa2Cu3O7−x thin film with a picosecond thermoreflectance technique

The thermal diffusivity of YBa₂Cu₃O_7?x (YBCO) film was measured using the optical pump–probe method. A theoretical finite-difference model was employed to calculate the diffusivity value, and the best fit for the c-axis oriented YBCO film showed an average thermal diffusivity of 0.25 ± 0.05 mm² s^?1. The obtained result is compared to previous reports measured using various methods.     

Attenuation of interfacial pinning enhancement in YBCO using a PrBCO buffer layer

Numerous experimental results have suggested that the J_c of YBa₂Cu₃O₇ (YBCO) films is significantly higher near the film–substrate interface than in the remainder of the film. We previously proposed that this effect is due to interfacial pinning enhancement caused by stress and the resulting misfit dislocations at the heteroepitaxial interface. To test this hypothesis we have used a non-superconducting PrBa₂Cu₃O_7?δ (PrBCO) buffer layer to minimize the lattice mismatch with YBCO. We find that the PrBCO layers lower J_c of the 0.4 μm YBCO films in a predictable way, and that, if sufficiently thick (～0.5 μm), they eliminate interfacial enhancement altogether. Our interpretation of this result is that the defects responsible for interfacial enhancement of flux pinning originate at the bottom of the non-superconducting PrBCO layer, which screens the pinning centers from vortices in YBCO. This result demonstrates that the pinning enhancement arises from stress at the film–substrate interface.     

Oxygen permeation characteristics of zirconia with surface modification

Yttria-stabilized zirconia (YSZ) can be used as an oxygen-permeating membrane at elevated temperature (> 1400 °C) due to its chemical and mechanical stability. It was previously shown that the oxygen transport through YSZ membrane in reducing oxygen partial pressure (P_O2) was highly influenced by the surface-exchange kinetics that can be improved by porous surface coating layers such as YSZ, GDC (Gd-doped ceria) or YSZ–GDC mixture [H.J. Park, G.M. Choi, J. Eur. Ceram. Soc. 25 (2005) 2577]. However, the increased oxygen flux was still lower than that estimated assuming bulk-diffusion limit and rapidly decreased with time due to the sintering of coating layers and the reaction between bulk YSZ and coating layers. In this study, the oxygen fluxes through YSZ with LaCrO₃, GDC + LaCrO₃ (bilayer), LaCrO₃ + 5 wt.% GDC (mixture), or LaCr_0.7Co_0.3O₃ coatings were measured under controlled P_O2 gradient (permeate-side P_O2: ∼ 3 × 10^− 12 atm, feed-side P_O2: 2 × 10^− 10–2 × 10^− 8 atm) at 1600 °C. The oxygen flux drastically increased with these coatings. The highest increase in oxygen flux was shown with GDC + LaCrO₃ (bilayer) coating and was maintained for a long time. The presence of highly catalytic Ce ions while maintaining porous structure in the coating layer may explain the observation. The prevention of formation of resistive layer due to ceria coating may also be partly responsible for the observation.     

Ionic conductivity of Ce1−xNdxO2−x / 2

The electrical conductivity of sintered samples of Ce_1−xNd_xO_2−x / 2 (0.01 ≤ x ≤ 0.2) was investigated in air as a function of temperature between 150 and 600 °C using AC impedance spectroscopy. The individual contribution of the bulk and grain boundary conductivities has been discussed in detail. In the low temperature range (< 350 °C), the activation enthalpy for bulk conductivity exhibited a shallow minimum at 3 mol% Nd, with a value of 0.68 eV. The activation enthalpy also produced a shallow minimum at 5 mol% Nd in the high temperature range (> 350 °C), with a value of 0.56 eV. It was shown that Ce_1−xNd_xO_2−x / 2 is an electrolyte that obeys the Meyer Neldel rule. The bulk conductivity data measured by others for the same system has also been recalculated and re-evaluated to facilitate easier comparison with our own data.     

Characterization of doped La0.7A0.3Cr0.5Mn0.5O3 − δ (A = Ca,Sr, Ba) electrodes for solid oxide fuel cells

Doped lanthanum manganese chromite based perovskite, La_0.7A_0.3Cr_0.5Mn_0.5O_3 ? δ (LACM, A = Ca, Sr, Ba), on yttria-stabilized zirconia (YSZ) electrolyte is investigated as potential electrode materials for solid oxide fuel cells (SOFCs). The electrical conductivity and electrochemical activity of LACM depend on the A-site dopant. The best electrochemical activity is obtained on the La_0.7Ca_0.3Cr_0.5Mn_0.5O_3 ? δ/YSZ (LCCM/YSZ) composite electrodes. The conductivity of LCCM is 29.9 S cm^? 1 at 800 °C in air, and the electrode polarization resistance (R_E) of the LCCM/YSZ composite cathode for the O₂ reduction reaction is 0.5 Ω cm² at 900 °C. The effect of Gd-doped ceria (GDC) impregnation on the LCCM cathode polarization resistances is also studied. GDC impregnation significantly enhances the electrochemical activity of the LCCM cathode. In the case of the 6.02 mg cm^? 2 GDC-impregnated LCCM cathode, R_E is 0.4 Ω cm² at 800 °C, ~ 60 times smaller than 24.4 Ω cm² measured on a LCCM cathode without the GDC impregnation. Finally the electrochemical activities of the doped lanthanum manganese chromites for the H₂ oxidation reaction are also investigated.     

Ionic and electronic conductivity of nitrogen-doped YSZ single crystals

The ionic and electronic charge transport was studied for single crystals of 9.5 mol% yttria-stabilized zirconia with additional nitrogen doping (YSZ:N) of up to 7.5 at.% (referred to the anion sublattice and formula unit Zr_0.83Y_0.17O_1.91) as a function of temperature and nitrogen content. The total conductivity being almost equivalent to the oxygen ion conductivity has been measured by AC impedance spectroscopy under vacuum conditions in order to prevent re-oxidation and loss of nitrogen. The electronic conductivity has been determined by Hebb–Wagner polarization using ion-blocking Pt microelectrodes in N₂ atmosphere. The ionic conductivity of YSZ:N decreases in the presence of nitrogen at intermediate temperatures up to 1000 °C. The mean activation energy of ionic conduction strongly increases with increasing nitrogen content, from 1.0 eV for nitrogen-free YSZ up to 1.9 eV for YSZ containing 7.3 at.% N. Compared to nitrogen-free YSZ, the electronic conductivity first decreases at nitrogen contents of 2.17 and 5.80 at.%, but then increases again for a sample with 7.53 at.%. At temperatures of 850 °C and above, the presence of the N^3? dopant fixes the electrode potential and thus the oxygen partial pressure at the Pt electrode to very low values. This corresponds to a pinning of the Fermi level at a relatively high energy in the upper half of the band gap. At 7.53 at.% N and 950 °C, the oxygen partial pressure in YSZ:N corresponds to p_O2 = 3 × 10^? 18 bar. At temperatures above 850 °C, even in the presence of a very small oxygen concentration in the surrounding gas phase, the nitrogen ion dopant becomes highly mobile and thus diffuses to the surface where it is oxidized to gaseous N₂. The results are discussed in terms of the ionic and electronic defect structures and the defect mobilities in YSZ:N.     

Preparation of YBCO film for microwave filter using a hybrid route

Pure (0 0 l)-textured CeO₂ buffer layers were deposited on single crystal r-plane Al₂O₃ (1–102) substrate by a hybrid process which was combined with magnetron sputtering for the seed layer and metal–organic deposition for the subsequent layer. Strongly c-axis oriented YBCO films were deposited on the CeO₂ buffered r-cut Al₂O₃ (1–102) substrates. Atomic force microscope and scanning electronic microscopy results show that the prepared buffers and YBCO films are relatively dense and smooth. The critical current of the YBCO films exceeds 1.5 MA/cm² at 77 K with the superconducting transition temperature of 90 K. The surface resistivity is as below as 14 μΩ at 1 GHz frequency. The results demonstrate that the hybrid route is a very promising method to prepare YBCO films for microwave application, which can combine the sputtering advantage for preparing of highly c-axis oriented CeO₂ buffer layers and the advantages of metal–organic deposition with rapid processing, low cost and easy preparation of large-area YBCO films.     

Effect of oxide on carbon deposition behavior of CH4 fuel on Ni/ScSZ cermet anode in high temperature SOFCs

This work investigated the effect of oxide in Ni-zirconia cermets on the carbon deposition behavior in internal reforming SOFCs. Within 800–1000 °C, carbon deposition was found to decrease with increasing temperature on Ni/ScSZ cermet anodes at a low oxygen / carbon ratio (O / C = 0.03) during anodic oxidation of methane. On the contrary, an opposite trend was observed on Ni/YSZ under the same conditions, consisting with the temperature dependence of carbon deposition predicted by a thermodynamic equilibrium calculation. Results of temperature-programmed-reduction (TPR) of NiO mixed with YSZ or ScSZ indicated that interaction of Ni with ScSZ is stronger than that with YSZ. The stronger interaction was corroborated by observed tendency of inhibiting Ni agglomeration by both BET specific surface area analysis and SEM observation. It was also found that the dependence of CO₂ production rate monitored by GC on current density showed a similar dependence trend of the equilibrium CO₂ content on O / C ratio. A model in which H₂O_ad enrichment effects on Ni surface by anodic current depend on the interaction between Ni and the oxide in Ni cermet was proposed to explain the different carbon deposition behaviors between Ni/YSZ and Ni/ScSZ cermets.     

Synthesis and electrical transport properties of Lu2+xTi2−xO7−x/2 oxide-ion conductors

The Lu_2+xTi_2−xO_7−x/2 (x = 0; 0.052; 0.096; 0.286; 0.44; 0.63; 33.3–49 mol% Lu₂O₃) nanoceramics with partly disordered pyrochlore-type structure are prepared by sintering freeze-dried powders obtained by a co-precipitation technique with 1600 °C annealing. Similar to pyrochlore-like compositions in the zirconate system, some of the new titanates are good oxide-ion conductors in air. The new solid-state electrolytes have oxide-ion conductivity in the interval of 1.0 × 10^− 3 – 2.5 × 10^− 3 S/cm at 740 °C in air. This value of conductivity is comparable with that of ZrO₂/Y₂O₃ ceramics. The conductivity of Lu_2+xTi_2−xO_7−x/2 depends on the chemical composition. The highest ionic conductivity is exhibited by nearly stoichiometric Lu_2+xTi_2−xO_7−x/2 (x = 0.096; 35.5 mol% Lu₂O₃) material containing ∼ 4.8 at.% Lu_Ti anti-site defects.     

The super-hydrophobic IR-reflectivity TiO2 coated hollow glass microspheres synthesized by soft-chemistry method

The super-hydrophobic and IR-reflectivity hollow glass microspheres (HGM) was synthesized by being coated with anatase TiO₂ and a super-hydrophobic material. The super-hydrophobic self-cleaning property prolong the life time of the IR reflectivity. TBT and PFOTES were firstly applied and hydrolyzed on HGM and then underwent hydrothermal reaction to synthesis anatase TiO₂ film. For comparison, the PFOTES/TiO₂ mutual-coated HGM (MCHGM), PFOTES single-coated HGM (F-SCHGM) and TiO₂ single-coated HGM (Ti-SCHGM) were synthesized as well. The MCHGM had bigger contact angle (153°) but smaller sliding angle (16°) than F-SCHGM (contact angle: 141.2°; sliding angle: 67°). Ti-SCHGM and MCHGM both showed similar IR reflectivity with ca. 5.8% increase compared with original HGM and F-SCHGM. For the thermal conductivity, coefficients of F-SCHGM (0.0479 W/(m K)) was basically equal to that of the original HGM (0.0475 W/(m K)). Negligible difference was found between the thermal conductivity coefficients of MCHGM-coated HGM (0.0543 W/(m K)) and Ti-SCHGM (0.0546 W/(m K)).     

Reactivity and diffusion between La0.8Sr0.2MnO3 and ZrO2 at interfaces in SOFC cores by TEM analyses on FIB samples

In this paper, we investigate the diffusion and reactivity at the interface between the electrolyte (YSZ) and the cathode (LSM) of planar SOFC single cells by Analytical and High Resolution Transmission Microscopy. Cells were obtained via an aqueous tape-casting process allowing casting the three layers (cathode, electrolyte, anode [Ni-YSZ]) in a single operation. To allow the cell to function at intermediate temperatures (750–850 °C), the final electrolyte thickness after co-sintering at 1350 °C must range between 40 μm and 50 μm. As-sintered cells as well as cells that have been operated at 850 °C have been considered here; it is shown that the electrical performances were one order of magnitude less than expected and that they deteriorated quickly under operating conditions.In order to explain this behavior, we carried out analytical transmission electron microcopy. To obtain precisely located chemical and structural information, we used the “H-Shape” as well as the Lift Out FIB (Focused Ion Beam) techniques to extract 5 × 10 × 0.1 μm TEM samples; additional High Resolution characterization was carried out at interfaces between LSM and YSZ grains on standard ion-milled samples. We showed that the co-sintering temperature (1350 °C) was responsible for some diffusion of manganese through the electrolyte and the cathode, leading then to the rise of a significant electronic conduction and to the drop off of the ionic conductivity, and accounts for the germination and growth of the resistive pyrochlore phase La₂Zr₂O₇. Operating the cell at 850 °C do not aggravate these phenomena, but rather alters the anode microstructure.     

Preparation and characterization of iron–molybdate thin films

Mixed Fe–Mo oxides are used in industrial catalytic processes of selective oxidation of methanol to formaldehyde. For better understanding of the structure-reactivity relationships of these catalysts we aim to prepare well-ordered iron–molybdate thin films as model catalysts. Here we have studied Mo deposition onto Fe₃O₄ (111) thin films produced on Pt(111) as a function of Mo coverage and annealing temperature using LEED, AES, STM and IRAS. At low temperatures, the iron oxide film is covered by Mo = O terminated molybdena nanoparticles. Upon oxidation at elevated temperatures (T > 900 K), Mo species migrate into the film and form new bonds with oxygen in the film. The resulting films maintain the crystal structure of Fe₃O₄, and the surface undergoes a (√3 × √3)R30° reconstruction. The structure is rationalized in terms of Fe substitution by Mo in the surface layers.     

Ultrathin Y2O3(111) films on Pt(111) substrates

The growth of ultrathin films of Y₂O₃(111) on Pt(111) has been studied using scanning tunneling microscopy (STM), X-ray photoemission spectroscopy (XPS), and low energy electron diffraction (LEED). The films were grown by physical vapor deposition of yttrium in a 10^? 6 Torr oxygen atmosphere. Continuous Y₂O₃(111) films were obtained by post-growth annealing at 700 °C. LEED and STM indicate an ordered film with a bulk-truncated Y₂O₃(111)–1 × 1 structure exposed. Furthermore, despite the lattices of the substrate and the oxide film being incommensurate, the two lattices exhibit a strict in-plane orientation relationship with the [11?0] directions of the two cubic lattices aligning parallel to each other. XPS measurements suggest hydroxyls to be easily formed at the Y₂O₃ surface at room temperature even under ultra high vacuum conditions. The hydrogen desorbs from the yttria surface above ~ 200 °C.