纳米C和SiC掺杂对MgB2带材超导性能的影响

采用X射线衍射仪,扫描电镜,超导量子干涉仪等仪器对纳米C和SiC掺杂的MgB2带材进行了表征,并采用标准四引线法对样品的临界电流进行了测试. 实验表明,C和SiC掺杂在提高MgB2带材高场下的临界电流密度方面具有显著效果. 在温度为4.2 K、磁场大于9 T条件下,C和SiC掺杂样品的临界电流密度与未掺杂样品相比均提高一个数量级以上. 掺杂样品高磁场下良好的临界电流性能主要归因于C对B的替代所产生的晶格畸变、位错等缺陷和局部成分变化而导致的有效晶内钉扎作用. 实验结果表明,SiC掺杂的MgB2带材之所以具有非常好的高场电流特性,和C掺杂的样品一样, C对B的替代起到十分关键的作用.     

Effect of temperature and concentration of solution in chemical treatment for MgB2 powder on the Jc–B property of ex situ processed MgB2 superconducting tapes

MgB₂ tapes were fabricated through an ex situ process in a powder-in-tube (PIT) technique using powders treated at elevated temperatures in benzene solutions of benzoic acid with various concentrations. The amount of carbon substitution in MgB₂ in heat-treated tapes with treatment at the boiling points (BPs) of the solutions is smaller than that at room temperature (RT). This carbon substitution improves the J_c property in the high-field region. For RT treatment, the J_c property is improved with increasing the solution concentration. In contrast, the J_c property is deteriorated with increasing the concentration for BP treatment. On the other hand, treatment with pure solvent does not bring about the J_c enhancement and carbon substitution at all at both RT and the BPs. This suggests that acidity essential for the dissolution of MgO layers attached to the surface of MgB₂ is required for carbon substitution. The BP treatment enhances the acting of the acidity and possibly inflicts damage on MgB₂ itself.     

Effects of doping with nanoscale Co3O4 particles on the superconducting properties of powder-in-tube processed MgB2 tapes

Nanoscale Co₃O₄ particles were doped into MgB₂ tapes with the aim of developing superconducting wires with high-current-carrying capacity. Fe-sheathed MgB₂ tapes with a mono-core were prepared using the in situ powder-in-tube (PIT) process with the addition of 0.2–1.0 mol% Co₃O₄. The critical temperature decreased monotonically with an increasing amount of doped Co₃O₄ particles for all heat-treatment temperatures from 600 to 900 °C. However, the transport critical current density (J_c) at 4.2 K varied with the heat-treatment temperatures. The J_c values in magnetic fields ranging from 7 to 12 T decreased monotonically with increasing Co₃O₄ doping level for a heat-treatment temperature of 600 °C. In contrast, some improvements on the J_c values of the Co₃O₄ doped tapes were observed in the magnetic fields below 10 T for 700 and 800 °C. Furthermore, J_c values in all the fields measured increased as the Co₃O₄ doping level increase from 0 to 1 mol% for 900 °C. This heat-treatment temperature dependence of the J_c values could be explained in terms of the heat-treatment temperature dependence of the irreversibility field with Co₃O₄ doping.     

Effect of SiC buffer layer on flux pinning property of MgB2 tapes

In this paper we aimed at investigating the flux pinning property of MgB₂ films on hastelloy tapes which are buffered on various thicknesses of SiC layers. We have observed that the increase in thickness of the SiC buffer layer is very closely related with the systematic improvement of the field dependence of the critical current densities (J_c) of MgB₂ tapes while the values of J_c decreased. According to the analysis of the pinning force density (F_p), there exist two pinning sources both in the pure MgB₂ and in the MgB₂ film with the thinnest SiC buffer layer. On the while, the pinning source observed in the MgB₂ films with thicker SiC buffer layers appears to be different from those previously mentioned. The different pinning behaviors of MgB₂ films may suggest that there be an additional pinning center working on the MgB₂ films with thick SiC buffer layers. The microstructural analyses of MgB₂ films confirmed that intra-granular defects and columnar grain boundaries may be a dominant pinning mechanism in the pure MgB₂ and the MgB₂ film with 170 nm-thick SiC buffer layer. For the MgB₂ films with thicker SiC buffer layers, carbon diffusion into the MgB₂ film, which is defined by the Auger electron spectroscopy, may be the origin of the additional pinning mechanism.     

Stoichiometry dependence of the critical current density in pure and nano-SiC doped MgB2/Fe tapes

The stoichiometry dependence of the microstructure and superconducting properties of pure and nano-SiC doped MgB₂/Fe tapes was systematically investigated. The tapes prepared with the composition of a slight deficiency of Mg (Mg_0.9B₂ and Mg_xB₂(SiC)_0.1 (x = 0.9 and 1.0)) showed the best transport J_c. Adding a slight excess of Mg like 5%, as being done by many researchers, was not beneficial for the J_c improvement as expected. The onset T_c was not significantly changed in both doped and undoped tapes by adding excess of boron or magnesium, but the transition widths were broadened due to the induced impurities. The slightly-Mg-deficient pure samples show smaller grain sizes, which corresponds to a better J_c–B performance at high magnetic field due to the enhanced grain boundary pinning. The field dependence of J_c in nano-SiC doped tapes was almost not influenced by varying the starting Mg content although microstructural difference can still be seen, suggesting that the flux pinning ability was mainly controlled by the carbon substitution effect for boron.     

纳米C和SiC掺杂对MgB2带材超导性能的影响

采用X射线衍射仪，扫描电镜，超导量子干涉仪等仪器对纳米C和SiC掺杂的MgB₂带材进行了表征，并采用标准四引线法对样品的临界电流进行了测试. 实验表明，C和SiC掺杂在提高MgB₂带材高场下的临界电流密度方面具有显著效果. 在温度为4.2 K、磁场大于9 T条件下，C和SiC掺杂样品的临界电流密度与未掺杂样品相比均提高一个数量级以上. 掺杂样品高磁场下良好的临界电流性能主要归因于C对B的替代所产生的晶格畸变、位错等缺陷和局部成分变化而导致的有效晶内钉扎作用. 实验结果表明，SiC掺杂的MgB2带材之所以具有非常好的高场电流特性，和C掺杂的样品一样， C对B的替代起到十分关键的作用. 关键词： 2带材')" href="#">MgB₂带材 C掺杂 SiC掺杂 临界电流性能     

Fluctuation conductivity in superconducting MgB2

According to the crystal structure of MgB₂ and band structure calculations, quasi-two-dimensional (2D) boron planes are responsible for the superconductivity. We report on critical-field and resistance measurements of 5.6-μm-thick MgB₂ films grown on a sapphire single-crystal substrate. Resistivity measurements yield a temperature dependence of the fluctuation conductivity above the critical temperature, which agrees with the Aslamazov-Larkin and Maki-Thompson theory of fluctuations in layered superconductors, indicating a quasi-two-dimensional nucleation of superconductivity in MgB₂.     

Effect of pressure on the superconducting transition temperature of doped and neutron-damaged MgB2

Measurements of the superconducting transition temperatures for Al-doped, C-doped and neutron-damaged–annealed MgB₂ samples under pressure up to 8 kbar are presented. The dT_c/dP values change systematically with the decrease of the ambient pressure T_c in a regular fashion. The evolution of the pressure derivatives can be understood assuming that the change in phonon spectrum is a dominant contribution to dT_c/dP.     

高性能MgB2长线材制备及性能表征

采用原位粉末装管工艺,分别以Mg粉(99.5%),无定形B粉(99.9%)为原料,以纳米SiC(10-30 nm)作为掺杂材料制备铁基MgB2线.首先将已混合的原料在丙酮介质中球磨,真空干燥后,将粉末填入铁管内,然后通过孔型轧制、旋锻和拉拔等冷加工工艺得到11 m长外径Ф1.75 mm铁基MgB2超导线.用扫描电镜,电子能谱,X射线衍射仪和超导量子干涉仪测试发现,样品微观结构整齐,晶粒大小均匀,内部仅含微量MgO,TC(onset)= 35.1 K,ΔTC＝5.3 K.纳米SiC掺杂后,其中C造成MgB2晶格畸变,形成有效磁通钉扎中心,C元素在MgB2中分布均匀.标准四引线测试结果表明,11 m线均分10段后,各点的Jc(4.2 K,10 T)均超过1.0×104 A/cm2,最高值达到1.2×104 A/cm2.在10-18T范围各点临界电流值分布均匀,变化率小于10%.     

Effect of processing variables on the reaction kinetics of MgB2 fibers

The reaction kinetics for converting B fibers into MgB₂ fibers are measured by in situ synchrotron X-ray diffraction and ex situ by metallography as a function of the following processing variables: fiber diameter, fiber doping, fiber surface treatment, Mg flux (liquid or gaseous Mg), and thermal cycling. Changes to the fiber diameter, surface treatment and Mg flux affect little the rates of the reaction, while C-doping of fibers dramatically decreases reaction rate and thermal cycling increases the reaction rate.     

Non-resonant microwave absorption studies of superconducting MgB2 and MgB2 + MgO

Non-resonant microwave absorption (NRMA) studies of superconducting MgB₂ and a sample containing ∼10% by weight of MgO in MgB₂ are reported. The NRMA results indicate near absence of intergranular weak links in the pure MgB₂ sample. A linear temperature dependence of the lower critical field H _c1 is observed indicating a non-s wave superconductivity. However, the phase reversal of the NRMA signal which could suggest d wave symmetry is also not observed. In the MgB₂ + MgO sample, much larger low field dependent absorption is observed indicating the presence of intergranular weak links. The hysteretic behavior of NRMA is compared and contrasted in the two samples. In the pure MgB₂ sample, a large hysteresis is observed between the forward and the reverse scans of the magnetic field indicating strong pinning of flux lines. This hysteresis saturates a few degrees below T _c while in the MgB₂ + MgO sample, a much slower increase of hysteresis with decreasing temperature is observed, a signature of weaker pinning.     

Enhancement of the superconducting transition temperature of MgB2 by a strain-induced bond-stretching mode softening

We report a systematic increase of the superconducting transition temperature T(c) with a biaxial tensile strain in MgB2 films to well beyond the bulk value. The tensile strain increases with the MgB2 film thickness, caused primarily by the coalescence of initially nucleated discrete islands (the Volmer-Weber growth mode.) The T(c) increase was observed in epitaxial films on SiC and sapphire substrates, although the T(c) values were different for the two substrates due to different lattice parameters and thermal expansion coefficients. We identified, by first-principles calculations, the underlying mechanism for the T(c) increase to be the softening of the bond-stretching E(2g) phonon mode, and we confirmed this conclusion by Raman scattering measurements. The result suggests that the E(2g) phonon softening is a possible avenue to achieve even higher T(c) in MgB2-related material systems.     

Boron isotope effect in superconducting MgB2

We report the preparation method of and boron isotope effect for MgB2, a new binary intermetallic superconductor with a remarkably high superconducting transition temperature T(c)(10B) = 40.2 K. Measurements of both temperature dependent magnetization and specific heat reveal a 1.0 K shift in T(c) between Mg11B2 and Mg10B2. Whereas such a high transition temperature might imply exotic coupling mechanisms, the boron isotope effect in MgB2 is consistent with the material being a phonon-mediated BCS superconductor.     

Optical measurements of the superconducting gap in MgB 2

Far-infrared reflectivity studies on the polycrystalline intermetallic compound MgB₂ with a superconducting transition temperature T _c = 39 K were performed at temperatures 20 K to 300 K. We observe a significant raise of the superconducting-to-normal state reflectivity ratio below 70 cm ^-1 , with a maximum at about 25-30 cm ^-1 , which gives a lower estimate of the superconducting gap of 2Δ(0) ≈ 3-4 meV. Received 7 March 2001 and Received in final form 18 April 2001     

退火时间对MgB_2超导薄膜的影响

在多晶A l2O3衬底上,以B2H6作为硼源,化学气相沉积先驱B薄膜,采用Mg扩散方法,在不同退火时间条件下制备了MgB2超导薄膜。通过电阻-温度曲线测量、X射线衍射分析和扫描电子显微镜形貌观测方法,研究了退火时间对MgB2薄膜的超导特性、晶体结构、表面形貌的影响。     

二代高温超导带材失超电阻的交-直流等效计算方法

超导故障限流器具有通态损耗低、响应速度快等优点,是一种应用场景广阔的超导电力设备,但二代高温超导带材失超电阻的有效计算较困难,难以同时满足计算精度和速度的要求。本文对YBCO高温超导带材进行交流和直流过电流冲击实验,测量了短路故障电流作用下带材的失超电阻特性。结果表明,带材失超电阻与积累能量具有一一对应关系,且该对应关系在交流和直流工况下一致。以此为理论基础,搭建了基于电阻-能量关系的电阻型超导限流器失超电阻计算模型,提出了交直流等效失超电阻分析方法,可用交流冲击实验等效替代直流实验,降低实验与仿真建模的难度。     

制备温度对MgB-2薄膜超导电性的影响

报道了用两步法制备MgB2超导薄膜.首先利用脉冲激光沉积技术制备B膜,然后在Mg蒸气环境下对B膜进行后退火处理,通过扩散反应生成MgB2超导薄膜.采用扫描电子显微镜、x射线衍射、电阻测量和磁测量技术分析了前驱物B膜的制备温度对扩散产物MgB2薄膜的表面形貌、晶体结构、超导转变温度和临界电流密度的影响.结果表明,随着B膜制备温度的降低,MgB2薄膜中晶粒粒度减小、c取向的衍射线宽化、超导转变温度升高、临界电流密度增大.300℃时制备的MgB2超导薄膜的超导起始转变温度为395K,临界电流密度为13×107A 关键词： MgB2超导薄膜 脉冲激光沉积 基片温度     

关于MgB2超导多层膜间临界厚度的研究

利用多级的阶梯状势垒近似方法,应用于MgB<,2>作为超导体的SSeS结,对其临界厚度从基本原理入手并进行理论推导,获得超导多层膜的临界厚度公式,并对该公式展开讨论,取得一系列较有价值的结论.     

MgB2超导多层膜的制备方案

简要叙述了MgB2的发展和制备历史,通过对不同衬底材料上MgB2的反应情况的总结概括以及对不同衬底材料和MgB2的晶体结构和晶格常量的比较,提出一种MgB2超导多层膜的制备方案.     

Determination of the electron-phonon coupling constants from the experimental temperature dependences of superconducting gaps in MgB2

Experimental temperature dependences Δ_{σ, π}(T) of the energy of superconducting gaps for MgB₂ samples with the critical temperatures 22 K < T _c < 41 K have been fitted by selecting the renormalized electron-phonon coupling constants λ _ij with the use of the Moskalenko-Shul system of equations, the expression for the frequency of collective plasma oscillations obtained by Leggett for two-gap superconductors, and two fitting parameters. We previously obtained the dependences Δ_{σ, π}(T) by the multiple Andreev reflection spectroscopy of superconductor-constriction-superconductor junctions based on MgB₂ with various degree of disorder of the crystal structure. It has been shown that the intraband pairing constants are decisive for the superconductivity mechanism in MgB₂; in this case, √V _σσ V _ππ/V _σπ = 8–22 and the ratio of the interband constants α can range from 3 to 11. The set of the Eliashberg coupling constants λ _ij ⁰ has been qualitatively determined for relatively pure MgB₂ with maximum values T _c ≈ 40 K. The leading constant is 0.7 < λ _σσ ⁰ ≈ λ _eff ⁰ < 0.9 and depends on the choice of the upper integration limit in the Bardeen-Cooper-Schrieffer (BCS) model and the effective Coulomb repulsion μ _iff ^* . The characteristic ratio for the gap in the σ band is 2Δ_σ/k _B T _c = 5.0–6.5.