Townsend coefficient,escape curve,and efficiency of runaway-electron beam formation in argon

The ionization and drift characteristics of electrons in argon are simulated by the method of multi-particle dynamics. It is shown that, in argon (as well as in other gases studied earlier), the Townsend regime of ionization sets in even in strong fields if the electrode distance is much larger than the reciprocal Townsend coefficient. The dependences of the basic ionization and drift characteristics on the reduced field intensity are obtained, and an escape curve is constructed separating the region of effective electron multiplication from the region where the electrons leave the discharge gap having no time to multiply. The formation efficiency of a runaway-electron beam is calculated. It is shown that the dependence of the electrode voltage generating a given fraction of runaway electrons on the product of the pressure by the electrode distance has a form that qualitatively agrees with the runaway curve. When the efficiency is not too high (≤20%), the runaway curves virtually coincide with isoefficiency curves.     

Townsend coefficient,escape curve,and fraction of runaway electrons in copper vapor

Ionization and drift characteristics of electrons in copper vapor in the presence of an external electric field are analyzed. In contrast to normal gases, in copper vapor, the excitation energy of lower states is significantly lower than the ionization potential and the excitation cross section is several times greater than the ionization cross section at the incident-electron energy on the order of the ionization energy. This can affect the characteristics of electron bunching in gas. It is demonstrated that, as in previously studied gases, the notion of the Townsend coefficient remains meaningful even in the presence of strong fields at which the electric force exceeds the electron drag force acting in gas. The dependences of the main ionization and drift characteristics on the reduced field strength, the escape curve (which separates the region of effective electron multiplication and the region where electrons leave the discharge gap without multiplication), and the curves of equal efficiency for the formation of runaway electrons are obtained. It is demonstrated that a relatively high excitation cross section of copper levels leads to a sharper peak on the dependence of the Townsend coefficient on the field strength and a narrower region of the effective electron multiplication in comparison with previously studied gases.     

Hot-electron drift velocity in III–V semiconductors under the condition of impact ionization

A calculation has been carried out for the drift velocity of electrons in the highfield region under the condition of impact ionization in III–V semiconductor compounds.The energy-balance equation of the one-electron model has been solved considering alloy scattering and carrier-carrier interaction, in addition to optical phonon and ionization scattering. Fairly good agreement is obtained for GaAs with the available experimental and Monte-Carlo results. Graphs for the high-field drift velocity has also been plotted for Ga_1–x In_xAs (x = 0.53) at different ratios of ionization mean-free path and optical phonon mean-free path. The plot of high-field drift velocity versus ionization rate reveals that the high-field drift velocity strongly depends on the ionization rate of carriers, and vice versa.     

等离子体中氖输运及辐射特性模拟

通过假定一定的温度和密度分布,数值求解了一维等离子体连续性方程,获得了杂质氖电离态分布及辐射功率随空间位置和时间的变化.计算结果显示,在杂质注入时间较短时,由于离子输运及各种损失机制,总杂质密度在空间分布尚未达到平衡,电离态离子主要分布在等离子体周边,完全电离离子所占份额很小.当时间达到0.2s时,氖在等离子体中完全达到平衡状态,体积辐射功率趋于一个稳定的数值.达到平衡状态后,芯部一个很大范围内氖杂质主要以Ne 10离子型态存在,辐射功率以轫致辐射为主,因此辐射功率较小.辐射功率在空间的分布随时间变化较小,主要分布在等离子体周边及边界层一个狭小的辐射带内,说明氖引起的辐射主要由低电离态离子引起.     

Townsend coefficient and runaway of electrons at relativistic velocities

An electron-multiplication regime at large field strengths, in which case an electron can acquire a relativistic kinetic energy over the multiplication length, is considered. It is shown that, even in such superstrong fields, the Townsend electron-multiplication mechanism is valid if the distance between the electrodes is rather large. The Townsend coefficient and the drift velocity in helium are obtained in such fields. The electron-escape curve, which separates the region of efficient electron multiplication from the region where electrons escape from the gap without undergoing multiplication, is obtained.     

Monte Carlo simulation of excess noise in heterojunction avalanche photodetector

A Monte Carlo (MC) simulation of excess noise in heterojunction avalanche photodetector (APD), made up of InP/InGaAs, is made. The simulation is based on the hard threshold dead space consideration in the displaced exponential model of the distribution of ionization path lengths. Impact ionization and multiplication of electrons as function of ionizing electric field are also studied. The multiplication and noise are seen to be reduced compared to those in component materials. The simulated results are seen to agree well with the reports of other theoretical predictions and experimental results published in literatures.     

稀有气体在电离区压缩特性研究

采用Saha方程加Debye-Hückel修正简单近似模型,给出了稀有气体He, Ne, Ar, Kr, Xe在电离区的物态方程以及离化度.计算结果与已有实验和理论计算进行比较,验证了模型的可靠性.通过对稀有气体等温和冲击压缩特性理论分析,讨论了其压缩和电离的规律性.论证了在稀有气体He, Ne, Ar, Kr, Xe中,气体Xe具有较好的抗压缩性.     

氖原子对2000 eV X射线激光透明的产生机制

X射线自由电子激光与物质相互作用时出现了X射线透明现象,研究X射线透明现象的产生机制对理解X射线自由电子激光与物质相互作用过程具有重要参考价值.本文基于FAC(Flexible Atomic Code)程序计算的氖原子(离子)对2000 eV X射线的光电离截面和俄歇衰变速率,确定了不同通量密度下氖原子的主要电离方式;通过建立和解速率方程,得到了确定的电离方式中氖元素各电子组态数目比例随时间变化的公式,计算了氖原子在通量密度为2000和10000?~(-2)·fs~(-1)、持续时间为20 fs、光子能量为2000 eV的X射线激光照射下,任意时刻各主要电子组态的原子数目比例和总的氖原子平均光电离截面.建立了价电子完整的空心原子的数目比例随通量密度和曝光时间变化的公式.发现裸核和空心原子都会导致X射线透明,且选择恰当的通量密度和脉冲持续时间可以使价电子完整的空心原子数目比例达到极高.     

Nonlinear Interaction of P and S Ionisation Waves in Neon

Some characteristic properties of nonlinear interaction between p and s ionization waves in the positive column of a neon glow discharge are represented. At a neutral gas pressure of 0,3 torr and discharge current of 10 mA this interaction appears to be nonresonat.     

Calculation of characterisctics of electron drift in neon under a DC electric field

The features of the energy distribution function of electrons drifting in a monatomic gas are analyzed. The case of electron drift in neon under typical experimental conditions for dust structures in plasma is considered. The results of calculation of the energy balance of electrons and drift characteristics in an electric field at strengths of 0.1 < E/N < 1000 Td taking into account inelastic collisions are presented.     

非全裸氟离子与氖原子碰撞中的转移电离研究

采用位置灵敏探测和散射离子 反冲离子飞行时间技术测量了强相互作用区F2 + 和F3 + 离子与Ne原子碰撞中的转移电离截面与单电子俘获截面之比 .与Fq+ He实验结果进行了比较 ,并进行了定性讨论. The ratios of the cross-section of the transfer ionization to the single electron capture of Neon induced by F 2+ and F 3+ ions are measured by means of the time-of-flight technologie. In the present energy range, the transfer ionization C1I1 of neon can be considered as a two-step process, in which one electron is captured by projectile and another one is directly ionized, and the transfer ionization C1I2 process should be considered as a subsequent rearrangement of neon following...     

Temperature dependent characteristics of submicron GaAs avalanche photodiodes obtained by a nonlocal analysis

In this paper, using a nonlocal analysis we have extracted the temperature dependent ionization coefficients and threshold energies of submicron GaAs avalanche photodiodes (APDs) with multiplication region thicknesses as narrow as 49 nm, from electron and hole injection photo-multiplication processes. These extracted parameters have been used to predict the temperature dependence of APDs characteristics, such as mean gain, 3 dB-bandwidth, gain-bandwidth product, excess noise factor, performance factor, and breakdown field, over a temperature range of 20 K to 290 K. In the nonlocal analysis we have taken the effects of nonuniform electric filed within the multiplication region and its surrounding depletion regions, injected carrier’s initial ionization energy, carrier’s spatial ionization rate as well as the carrier’s dead space and its previous ionization history into account. We have shown that our predicted gain values are in excellent agreement with existing experimental data measured by others.     

Measurement of enhancement in field ionization of helium and neon by self field adsorption

A direct measurement of field ionization enhancement by self field adsorption has been carried out for helium and neon gases. The result shows a large enhancement factor for both helium and neon, in disagreement with present theories of field ionization with field adsorption.     

基于GEM读出的TPC工作气体的研究

针对TPC中对于电子漂移的要求, 结合Garfield软件, 研究了我们所研制的TPC原型所用的工作气体. 分析了不同气体对于电子漂移的寿命、漂移速度、横向和纵向扩散, 以及电离特性等参数的影响; 结合分析论证, 得到了以Ar, CH₄和CF₄为主要成分的气体作为工作气体时TPC的性能指标. 并且测试了该气体中的读出GEM探测器的能量分辨率、气体增益等性能参数, 获得了很好的结果.     

Photocurrent and photovoltage spectroscopy of amorphous silicon nanoclusters

Photoelectric properties (photocurrent efficiency and photovoltage) of the silicon suboxide films containing amorphous silicon nanoclusters were investigated in the spectral range of 300–1100 nm. A strongly pronounced increase of the photocurrent efficiency of the sandwich-like structures with such films on c-Si substrates was observed in the short-wavelength region. The possible mechanisms of the increase were discussed, and carrier multiplication due to impact ionization of the defect states was considered to be the most probable. Impact ionization of the defect states involves two main steps: (i) trapping of the photogenerated electron in a defect state, and (ii) impact ionization of this state by another photoexcited electron that has got sufficient energy due to absorption of a high-energy photon.     

On the effect of residual gas on ionization waves in inert gases

The paper deals with the influence of concentration of residual gases in spectroscopically pure neon on parameters of ionization waves in a low-pressure plasma. The change in the concentration of residual gases was produced by a purification of neon by molecular sieves. The measurements concerned the dispersion and frequency dependences of the amplitude together with the self-excitation limit of p-type ionization waves in neon.     

A Survey of the Electron and Ion Transport Properties of SF6

A compilation of the available data on some of the basic transport properties of sulfur hexafluoride (SF6) is presented. The properties considered are a) electron ionization, attachment, detachment and diffusion coefficients, and electron drift velocity; b) positive and negative ion mobilities, negative ion diffusion, and ion-ion recombination coefficients; and c) secondary ionization coefficients. Approximate analytical representations of the data are also given.     

Characteristics of electron drift in the low-pressure gas discharge

The features of the energy distribution function of electrons during their drift in neon are analyzed for typical conditions of experiments with dust structures in plasma. The energy balance of electrons and drift characteristics in an electric field at strengths 13 < E/N < 42 Td were calculated taking into account inelastic collisions and the effect of electron loss on gas-discharge tube walls.     

Anomalous behavior of optogalvanic signal in a miniature neon discharge lamp

A strong optogalvanic effect has been observed in a negative glow of a miniature neon discharge lamp using tunable pulse dye laser pumped by a copper vapor laser. A comparative study on temporal evolution of optogalvanic signal in a positive and negative dynamic resistance region of the discharge is described. Dye laser beam was tuned to various neon transitions 1s_i → 2p_j (Paschen notations) within 570-617 nm wavelength range. Anomalous behavior of optogalvanic signal was observed at 588.2 nm for (1s₅ → 2p₂) neon transition at low discharge current (<220 μA). This anomalous behavior is the attributes of damped oscillations of optogalvanic signal that correlate with negative dynamic resistance (dV/di < 0) of the discharge. Penning ionization at low discharge current and small energy mismatch is assumed to be the main cause of the negative dynamic resistance. Penning ionization process has been explained by resonantly ionizing energy transfer via collisions between neon buffer gas atoms in the lowest metastable state (1s₅) and electrode sputtered atoms in ground state using their partial energy level diagram.     

THE PROTOTYPE OF THE TIME EXPANSION CHAMBER

The prototype of the time expansion chamber, one kind of drift chambers, inwhich the drift region and amplification region is well separated, is described. Its prin-ciple, characteristic, construction and some experimental results are given in detail, Theseresulte are: signals of ionization process along a single charged particle track; the driftvelocities of the electrons in several gases; and the counts distribution of the ionizationclusters in the unit track of a beta particle. And some possible improvements of theseexperiments and the possible applications of this chamber are discussed.