First-principles study of the electronic and optical properties of ZnO nanowires

The geometric, energetic, electronic structures and optical properties of ZnO nanowires (NWs) with hexagonal cross sections are investigated by using the first-principles calculation of plane wave ultra-soft pseudo-potential technology based on the density functional theory (DFT). The calculated results reveal that the initial Zn-O double layers merge into single layers after structural relaxations, the band gap and binding energies decrease with the increase of the ZnO nanowire size. Those properties show great dimension and size dependence. It is also found that the dielectric functions of ZnO NWs have different peaks with respect to light polarization, and the peaks of ZnO NWs exhibit a significant blueshift in comparison with those of bulk ZnO. Our results gives some reference to the thorough understanding of optical properties of ZnO, and also enables more precise monitoring and controlling during the growth of ZnO materials to be possible.     

First-principles study of structural,electronic and optical properties of ZnF_2

The structural, electronic, and optical properties of rutile-, CaC12-, and PdF2-ZnF2 are calculated by the plane-wave pseudopotential method within the density functional theory. The calculated equilibrium lattice constants are in reasonable agreement with the available experimental and other calculated results. The band structures show that the rutile-, CaCl2-, and PdF2-ZnF2 are all direct band insulator. The band gaps are 3.63, 3.62, and 3.36 eV, respectively. The contribution of the different bands was analyzed by the density of states. The Mulliken population analysis is performed. A mixture of covalent and weak ionic chemical bonding exists in ZnF2. Furthermore, in order to understand the optical properties of ZnF2, the dielectric function, absorption coefficient, refractive index, electronic energy loss spectroscopy, and optical reflectivity are also performed in the energy range from 0 to 30 eV. It is found that the main absorption parts locate in the UV region for ZnF2. This is the first quantitative theoretical prediction of the electronic and optical properties of ZnF2 compound, and it still awaits experimental confirmation.     

In掺杂ZnO电子结构的第一性原理研究

采用第一性原理平面波超软赝势,计算了纤锌矿ZnO和不同掺杂量下In掺杂ZnO晶体的能带结构、态密度和分波态密度.计算表明,In的掺杂导致ZnO禁带宽度变窄.随着掺杂量的增大,In_xZn_1－xO的导带底和价带顶同时下降,但是导带底比价带顶下降得多,这导致了带隙的变窄.此外,In掺杂使晶胞晶格常数增大,这对带隙的变窄也有一定作用.     

Cd掺杂纤锌矿ZnO电子结构的第一性原理研究

采用密度泛函理论结合投影缀加波方法,对掺杂Cd导致ZnO禁带宽度下降的机理进行了研究. 通过对掺杂前后电子能带结构,态密度以及分态密度的计算和比较,发现Cd_xZn_1-xO价带顶端(VBM)始终由O-2p占据;而导带顶端(CBM)则由Cd-5s与Zn-4s杂化轨道控制. 随着掺杂浓度的增加,决定带隙宽度的CBM的位置下降,同时VBM的位置上升,从而导致了带隙的变窄,出现了红移现象. 此外,Cd掺杂会使晶胞发生膨胀,这种张应变也是导致Cd 关键词： 密度泛函理论 电子结构 Cd掺杂ZnO     

Cd掺杂纤锌矿ZnO电子结构的第一性原理研究

采用密度泛函理论结合投影缀加波方法，对掺杂Cd导致ZnO禁带宽度下降的机理进行了研究. 通过对掺杂前后电子能带结构，态密度以及分态密度的计算和比较，发现Cd_xZn_1-xO价带顶端(VBM)始终由O-2p占据；而导带顶端(CBM)则由Cd-5s与Zn-4s杂化轨道控制. 随着掺杂浓度的增加，决定带隙宽度的CBM的位置下降，同时VBM的位置上升，从而导致了带隙的变窄，出现了红移现象. 此外，Cd掺杂会使晶胞发生膨胀，这种张应变也是导致Cd     

First-principles study of the electronic structure and optical properties of cubic Perovskite NaMgF_3

The structural, electronic, and optical properties of cubic perovskite NaMgF3 are calculated by plane-wave pseudopo- tential density functional theory. The calculated lattice constant a0, bulk modulus B0, and the derivative of bulk modulus B~ are 3.872/~, 78.2 GPa, and 3.97, respectively. The results are in good agreement with the available experimental and theo- retical values. The electronic structure shows that cubic NaMgF3 is an indirect insulator with a wide forbidden band gap of Eg = 5.90 eV. The contribution of the different bands is analyzed by total and partial density of states curves. Population analysis of NaMgF3 indicates that there is strong ionic bonding in the MgF2 unit, and a mixture of ionic and weak covalent bonding in the NaF unit. Calculations of dielectric function, absorption coefficient, refractive index, electronic energy loss spectroscopy, optical reflectivity, and conductivity are also performed in the energy range 0 to 70 eV.     

First-principles study of structrural and corrected band properties of wurtzite Zn1-xCdxO and Zn1-xMgxO systems

A first-principles method based on density functional theory(DFT),a generalized gradient approximation(GGA),and a projector-augmented wave(PAW) are used to study the structual and band properties of wurtzite Zn1-xCdxO and Zn1-xMgxO(0 ≤x≤1) ternary alloys.By taking into account all of the possible structures,the band gaps of Zn1-xCdxO and Zn1-xMgxO alloys are corrected and compared with experimental data.     

Al，Ga掺杂ZnO电子结构和光电特性的第一性原理计算

采用基于密度泛函理论(DFT)框架下广义梯度近似(GGA)的PBE平面波超软赝势方法,计算了本征ZnO,Al掺杂ZnO(ZnAlO)和Ga掺杂ZnO(ZnGaO)的能带结构、态密度、复介电函数和复电导率. 其中Al或Ga是以替位杂质的形式进入ZnO晶格. 计算结果表明纤锌矿型ZnO,ZnAlO和ZnGaO都是直接带隙半导体材料,掺杂后ZnO的带隙变小,且ZnAlO的带隙略大于ZnGaO. 掺杂后ZnO的电子结构发生变化,费米能级由本征态时位于价带顶上移进入导带,ZnO表现为n型掺杂半导体材料,掺杂后在导带底出现大量由掺杂原子贡献的自由载流子—电子,明显提高了电导率和介电函数,改善了ZnO的导电性能,并且ZnAlO的导电性能要略好于ZnGaO.     

Zn1-xMgxO电子结构及光学性质的第一性原理GGA+U方法研究

Mg掺杂ZnO形成的固溶体Zn_1-xMg_xO（ZMO）（0 ≤ x ≤ 0.25）是一种带隙较宽、电子学性质可调控的半导体材料,在薄膜太阳电池及光电设备的透明电极等方面具有重要的应用价值。基于密度泛函理论下的第一性原理超软赝势方法,采用GGA+U计算了ZMO的电子结构和光学性质。计算结果表明,随着x值的增加,ZMO的禁带宽度由x=0时的3.32 eV增加到x=0.25时的3.78 eV;光吸收边及反射谱和能量损失谱均发生明显蓝移,峰值存在于紫外光区。计算结果与实验结论相符合。     

Al，Ga掺杂ZnO电子结构和光电特性的第一性原理计算

采用基于密度泛函理论(DFT)框架下广义梯度近似(GGA)的PBE平面波超软赝势方法，计算了本征ZnO，Al掺杂ZnO(ZnAlO)和Ga掺杂ZnO(ZnGaO)的能带结构、态密度、复介电函数和复电导率. 其中Al或Ga是以替位杂质的形式进入ZnO晶格. 计算结果表明纤锌矿型ZnO，ZnAlO和ZnGaO都是直接带隙半导体材料，掺杂后ZnO的带隙变小，且ZnAlO的带隙略大于ZnGaO. 掺杂后ZnO的电子结构发生变化，费米能级由本征态时位于价带顶上移进入导带，ZnO表现为n型掺杂半导体材料，掺杂后在导带底出现大量由掺杂原子贡献的自由载流子—电子，明显提高了电导率和介电函数，改善了ZnO的导电性能，并且ZnAlO的导电性能要略好于ZnGaO.     

First-principles calculations for electronic, optical and thermodynamic properties of ZnS

The electronic, optical and thermodynamic properties of ZnS in the zinc-blende （ZB） and wurtzite （WZ） structures are investigated by using the plane-wave pseudopotential density functional theory （DFT）. The results obtained are consistent with other theoretical results and the available experimental data. When the pressures are above 20.5 and 27 GPa, the ZB-ZnS and the WZ-ZnS are converted into indirect gap semiconductors, respectively. The critical point structure of the frequency-dependent complex dielectric function is investigated and analysed to identify the optical transitions. Moreover, the values of heat capacity Cv and Debye temperature θ at different pressures and different temperatures are also obtained successfully.     

First-principles calculations for electronic and optical properties of the zinc-blende structured BeS compound under pressure

The electronic and the optical properties of the cubic zinc-blende (ZB) BeS under high pressure have been investigated by using \it ab initio plane-wave pseudopotential density functional theory method in the generalised gradient approximation (GGA) for exchange-correlation interaction. The electronic band structure and the pressure dependence of the total and partial densities of state under pressure are successfully described. Our calculations show that the ZB BeS has large and indirect band gaps associated with (Γ → X) transitions in ambient conditions. The results obtained are consistent with the experimental data available and other calculations. The optical properties, including dielectric function, energy-loss function, complex refractive index, reflection and absorption spectra, are investigated and analysed at different external pressures. The results suggest that the optical absorption appears mostly in the ultra-violet region and the curve of refractive index shift toward high energies (blue shift) with pressure increasing.     

纤锌矿结构Zn1-xMgxO电子结构及吸收光谱的第一性原理研究

采用第一性原理计算方法,计算了纤锌矿结构Zn_1-xMg_xO(x=0,00625,0125,025)的电子结构及吸收光谱. 计算结果表明,Mg的掺入使ZnO的电子结构发生了较大的改变,与Mg邻近的O原子得到电子的数目明显增大,进而O原子返回部分电子给邻近Zn原子. Zn-O间相互作用减弱,禁带宽度变大,这也从同一合金中Zn4s上移的程度得到证实. 其吸收光谱也随着Mg的掺入出现蓝移现象,其吸收边对应波长分别为379, 关键词： 第一性原理计算 电子结构 吸收光谱 纤锌矿结构ZnO     

N掺杂SnO2材料光电性质的第一性原理研究

采用全电势线性缀加平面波(full potential linearized augmented plane wave method,简记为FP-LAPW)方法,基于密度泛函理论第一性原理计算分析N掺杂SnO₂材料,研究了在N替代O原子和N替代Sn原子情况下的电子态密度、电荷密度分布以及光学性质.研究表明N掺杂替代Sn较之N掺杂替代O原子的带隙要宽,都宽于SnO₂的本征带隙,且两种情况下N分别处于负氧化态和正氧化态,其介电函数谱也与带隙对应发生蓝移,从理论上指出     

Mg, Sr掺杂CaF2电子结构及光学性质的第一性原理研究

采用基于密度泛函理论(DFT)的第一性原理方法对纯CaF2晶体和Mg、Sr掺杂CaF2体系的晶体结构、电学以及光学性质进行了详细的对比研究, 结果表明: 与纯CaF2晶体相比, 掺杂体系的带隙变窄且形成新的态密度峰, 费米面附近出现F与Mg、Sr原子间轨道杂化加强现象. 另外, 掺杂体系仅表现出介电性质, 其对紫外光的吸收强度大大减弱, 而Ca7SrF16掺杂体系在25.44 eV处产生新的小吸收峰. CaF2晶体掺入Mg、Sr原子后, 体系在紫外光区的消光系数减小且对紫外光的透过率增大. 此外, 掺杂体系的反射谱峰和损失函数峰均发生红移且峰值显著降低.     

Mg, Sr掺杂CaF2电子结构及光学性质的第一性原理研究

采用基于密度泛函理论(DFT)的第一性原理方法对纯CaF2晶体和Mg、Sr掺杂CaF2体系的晶体结构、电学以及光学性质进行了详细的对比研究, 结果表明: 与纯CaF2晶体相比, 掺杂体系的带隙变窄且形成新的态密度峰, 费米面附近出现F与Mg、Sr原子间轨道杂化加强现象. 另外, 掺杂体系仅表现出介电性质, 其对紫外光的吸收强度大大减弱, 而Ca7SrF16掺杂体系在25.44 eV处产生新的小吸收峰. CaF2晶体掺入Mg、Sr原子后, 体系在紫外光区的消光系数减小且对紫外光的透过率增大. 此外, 掺杂体系的反射谱峰和损失函数峰均发生红移且峰值显著降低.     

Nd、N掺杂ZnO的电子结构和光学性质的第一性原理研究

基于密度泛函理论的第一性原理,使用GGA+U方法计算出N、Nd分别单掺ZnO及N、Nd共掺ZnO晶体的形成能,能带结构,态密度及光学性质.经过对比发现:N、Nd各掺杂ZnO中,共掺体系比单掺体系更容易形成,其中低浓度掺杂难度更低;共掺体系随着掺杂浓度的升高,其畸变的强度就越强,禁带宽度变窄,电子跃迁到导带上所需的能量更小,光吸收系数较大,并且都产生了红移,光谱响应范围扩展到了整个可见光区域;共掺体系在低能区域的介电谱峰值较高,说明其极化能力较强,光生电场强度较大,会使光激发载流子在晶体内的迁移变快,对电荷的束缚能力增强.因此N、Nd共掺可以有效提升ZnO的光催化性和极化能力.     

Be掺杂纤锌矿ZnO电子结构的第一性原理研究

采用密度泛函理论结合投影缀加波方法,对Be掺杂导致ZnO禁带宽度增加的机理进行了研究.通过对掺杂前后电子能带结构、总态密度以及分态密度的计算和比较,发现导带底(CBM)是由Be 2s电子与Zn 4s电子共同控制;而Be_xZn_1-xO价带顶 (VBM)始终由O 2p电子占据.随着掺杂量的增加,决定带隙宽度的CBM的位置上升,同时VBM的位置下降,从而导致了带隙的变宽,出现了蓝移现象.此外,Be掺杂会使晶胞发生压缩,这种压应变也是导致Be 关键词： 密度泛函理论 电子结构 Be掺杂ZnO     

第一性原理研究Be-S共掺杂AlN纳米片的电子结构和光学性质

基于密度泛函理论体系下广义梯度近似(GGA),利用第一性原理方法计算了Be替代Al、S替代N和Be-S共掺杂对氮化铝纳米片的电子结构和光学性质的影响.计算结果表明,掺杂改变了氮化铝纳米片的带隙,但仍显示半导体特性. Be掺杂类型对氮化铝纳米片的晶体结构影响不大,而S掺杂和Be-S共掺杂都使得氮化铝纳米片有不同程度的弯曲.同时Be-S共掺杂中S原子起到激活受主杂质Be原子的作用,使得受主能级向低能方向移动.共掺杂比单掺杂具有更高的受主原子浓度,并减小局域化程度.光学性质也发生较大改变:S原子掺杂氮化铝纳米片的介电函数虚部出现第二介电峰,Be掺杂和Be-S共掺杂使得损失谱的能量区间有所展宽,峰值降低并向高能区移动.     

Cu-Co共掺杂ZnO光电性质的第一性原理计算

采用密度泛函理论框架下的第一性原理平面波超软赝势方法,计算了本征ZnO,Cu 1021cm-3单掺杂ZnO,Co单掺杂ZnO,Cu-Co共掺杂ZnO的电子结构和光学性质.结果表明,在本文掺杂浓度数量级下,Cu,Co单掺杂可以提高ZnO的载流子浓度,从而改善ZnO的导电性,Cu-Co共掺杂时ZnO半导体进入简并状态,呈现金属性.这三种掺杂ZnO均会在可见光和近紫外区域出现光吸收增强现象,其中由于Cu离子与Co离子之间的协同效应,Cu-Co共掺杂ZnO对太阳光的吸收大幅增加,因此Cu-Co共掺杂ZnO可以用于制备高效率的太阳电池.