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1.
交换作用对 CeF3晶体磁性和磁光效应的影响   总被引:2,自引:1,他引:1       下载免费PDF全文
研究了顺磁性晶体CeF3内交换作用有效场随温度的变化关系,给出了其形式为Hin=(-0.68-0.002T)×10-6M.结合该关系,用量子理论的计算得到了与实验值吻合较好的磁化率倒数、Verdet常数倒数随温度的变化关系,并且用光磁效应的概念和规律对结果作了进一步分析,指出光诱导促进了该晶体内电子间的交换作用.  相似文献   

2.
夏天  张国营  张学龙  薛刘萍 《物理学报》2007,56(3):1741-1745
研究了晶场二级效应在PrF3晶体中的作用,发现该效应可使Pr3+离子的晶场单态与其他态混合,对PrF3晶体磁化率产生明显影响.进一步研究了晶体内的交换作用有效场,其形式为Hin=(1.9-0.02556T)×10-5M,在100—300 K的温度范围内,以此计算的PrF3晶体的倒数磁化率和Verdet常数的倒数与实验值符合较好.结果表明,在PrF3晶体中,晶场二级效应与离子间的交换作用都不能忽略. 关键词: 晶场二级效应 交换作用有效场 Verdet常数 3晶体')" href="#">PrF3晶体  相似文献   

3.
黄逸佳  张国营  胡风  夏往所  刘海顺 《物理学报》2014,63(22):227501-227501
在一些磁性材料内, 磁性离子间交换作用和磁性离子的自旋涨落对材料磁性有影响. 本文根据磁比热实验值确定了晶场参数后, 利用包含自旋涨落的交换作用有效场Hm= n0 (1 + γ T + β eω T)M, 计算了PrNi2晶体晶场能级的Zeeman劈裂. 在温度为3.8 K ≤T≤ 30 K范围内, 计算了该晶体多晶磁矩随外磁场的变化, 以及外磁场H=5000 Oe时磁化率倒数随温度的变化, 计算结果和实验值符合较好. 当外磁场在0–50000 Oe时, 计算的该晶体的磁熵变与已有文献的理论结果相似. 计算结果说明, 提出的包含自旋涨落的交换作用有效场不仅适合亚铁磁性晶体, 而且也适合顺磁性晶体. 关键词: 2')" href="#">PrNi2 磁比热 交换作用有效场 磁矩 磁熵变  相似文献   

4.
研究了晶场二级效应在PrF3晶体中的作用,发现该效应可使Pr3+离子的晶场单态与其他态混合,对PrF3晶体磁化率产生明显影响.进一步研究了晶体内的交换作用有效场,其形式为Hin(1.9-0.02556T)×10-5M,在100-300 K 的温度范围内,以此计算的PrF3晶体的倒数磁化率和Verdet常数的倒数与实验值符合较好.结果表明,在PrF3晶体中,晶场二级效应与离子间的交换作用都不能忽略.  相似文献   

5.
董雪  张国营  夏往所  黄逸佳  胡风 《物理学报》2015,64(17):177502-177502
用量子理论计算了Dy3Al5O12的晶场能谱、Zeeman劈裂能级和波函数. 在外磁场He为0<He<9 T, 温度为3<T<42 K 范围内, 计算了该晶体的磁矩、磁熵变, 计算结果与相关实验数据吻合较好. 该计算结果表明, Dy3Al5O12内磁性离子间的交换作用非常微弱, 可以忽略. 从理论上给出了绝热退磁过程中温度变化ΔTT的关系, 并与Gd3Ga5O12晶体进行了比较, 发现不同外磁场下, Dy3Al5O12和Gd3Ga5O12的低温制冷性能在不同温区有差别. 在进行低温(T<10 K)制冷时, 若外磁场较低, 选择Dy3Al5O12作为磁制冷材料较好; 若外磁场较高, 选择Gd3Ga5O12作为磁制冷材料较好.  相似文献   

6.
郝娟  周广刚  马跃  黄文奇  张鹏  卢贵武 《物理学报》2016,65(11):113101-113101
高温压电晶体是许多机电器件必需的一种多功能材料, Ga3PO7晶体的居里温度高达1364 ℃, 可应用于高温极限条件. 但是预测高温极限条件下晶体的结构以及物理性质的问题采用实验研究的手段非常困难, 而理论上的预测未见研究. 本文采用密度泛函-准谐振近似理论计算了温度在0-1200 ℃范围内Ga3PO7 晶体的结构常数和热学性质, 结果表明Ga3PO7晶体的晶格常数a和c随温度的升高呈线性增大, 且c方向受温度影响更为显著; 晶体的密度随温度的升高而减小, 计算的a 和c方向平均热膨胀系数分别为1.67×10-6 K-1和3.58×10-6 K-1, 高温区定压热容为2.067 J/g·K, 与实验值一致. 计算了从常温到高温下该晶体的弹性常数以及体弹性模量的变化, 研究了高温条件下的声表面波特性, 发现随着温度的升高, 声表面波速度浮动较小, 而机电耦合系数略有增大; 在传播角为151° 时该晶体具有较好的温度稳定性且机电耦合系数达到最大值, 这表明Ga3PO7 晶体是一种有望应用于高温环境下的压电晶体.  相似文献   

7.
研究了LiB3O5晶体在不同温度下(在300—1173K的温度范围)的拉曼光谱,分析了LBO晶体结构随温度变化的规律.随着温度的升高,LBO晶体的拉曼光谱谱峰都不同程度地向低波数方向移动,也存在不同程度的展宽,同时强度减弱.发现晶体在1100K存在明显相变,与LBO晶体的相图给出的1107K的相变温度基本相符. 关键词: 3O5晶体')" href="#">LiB3O5晶体 高温拉曼光谱 相变  相似文献   

8.
在不同频率和偏置电场下测量了BaTiO3晶体从三方相到正交相再到四方相相变过程中的介电温谱.基于BaTiO3晶体在电场作用下的偶极子偏转假设和介电特性实验结果,提出BaTiO3各结构相在电场作用下的偶极子偏转路径可以由其相邻相的介电常数随温度的变化特性表现出来.推断出各结构相的偶极子偏转路径,以及偏置电场对偶极子偏转路径的影响. 关键词: 3晶体')" href="#">BaTiO3晶体 介电特性 结构相变 偶极子偏转路径  相似文献   

9.
周广宏*  潘旋  朱雨富 《物理学报》2013,62(9):97501-097501
研究了磁场诱导生长的BiFeO3/Ni18Fe19磁性双层膜中 的交换偏置及其热稳定性. 结果表明: BiFeO3/Ni18Fe19双层膜中的交换偏置场Hex未表现出明显的磁练习效应. 在负饱和磁场等待过程中, BiFeO3/Ni18Fe19双层膜磁滞回线的前支和后支曲 线都随着在负饱和磁场中等待时间tsat的增加向正场方向偏移. 交换偏置场Hex的大小随着等待时间tsat的增加而减小, 矫顽力Hc基本不变. 交换偏置场Hex的大小随测量温度Tm的升高变化不明显, 表现出良好的热稳定性; 但矫顽力HcTm的升高而显著减小. 良好的热稳定性应该来源于铁电性和反铁磁性间的共同耦合作用. 关键词: 多铁性 磁性薄膜 交换偏置 热稳定性  相似文献   

10.
Pr3+在SBN晶体中的发光特性   总被引:1,自引:0,他引:1       下载免费PDF全文
通过测量Pr:SBN晶体的吸收光谱和荧光光谱来确定Pr3+在SBN晶体中的能级位置。由于Pr3+离子占据晶体中的不同格位而引起荧光带呈现双峰结构。测量荧光寿命随温度的变化关系,表明Pr3+在SBN晶体中 30态的无辐射弛豫主要是 3012多声子弛豫过程。 关键词:  相似文献   

11.
The spin fluctuations of the magnetic ions play an important role on the magnetic properties of the crystals and lead to a new mechanism for the Curie-Weiss susceptibility. The exchange field Hexch acting on the rare-earth ions in Tb:YIG is improved based on the temperature dependence of the spin fluctuations, which is expressed as Hexch=n0(1+γT+βT−2)MYIG. By means of the improved exchange field, the magnetic and magneto-optical properties of Tb3+ ions in Tb:YIG are calculated. The calculated results are in good agreement with the measured data in the temperature range from 40 to 300 K.  相似文献   

12.
Detailed X-band EPR study of a Gd3+-doped CeF3 single crystal has been made from 4.2 to 473 K, with particular attention to EPR linewidths. In general, it is found that there are four regions over which the log-log plot of the linewidth versus temperature is linear, implying separate power-law dependences of the linewidth. Gd3+ spin Hamiltonian parameters in CeF3 have been estimated at various temperatures from the line positions. From the linewidth variation with temperature the Debye temperature has determined to be about 140 K.  相似文献   

13.
The inelastic Coulomb scattering rate 1/τin of conduction electrons has been theoretically evaluated in the presence of localized states such as quantum dots. By a diagrammatical method, we have formulated 1/τin and its relation to the conductivity σloc(ω) through localized states. The dependence of τin on temperature T is examined in the case that σloc(ω) follows the Mott's model. It is found that 1/τin varies as T2(ln Δ/T)d+1 where d is the dimensionality and Δ is tunneling energy between the localized states in the asymptonic T = 0 limit, in agreement with Imry's calculation. It is also found that calculated 1/τin deviates from T2(ln Δ/T)d+1 as T increases, suggesting the importance of correction term at high temperature.  相似文献   

14.
Abstract

The water exchange reaction of [Pd(dien)H2O]2+ (dien = diethylenetriamine) was studied as function of temperature (268-308 K) and pressure 0.1-197 MPa) using 17O NMR techniques. The rate and activation parameters are: kcx = 5100 s?1 at 298 K; ΔH# =38 kJ mol?1; ΔS# = -47 JK?1 mol?1; ΔV# = -2.8 cm3 mol?1 at 296 K. The results are discussed in reference to solvent exchange data for other Pt(II) and Pd(II) complexes, and are interpreted in terms of an associatively activated substitution process.  相似文献   

15.
The ion exchange kinetics of polycrystalline Na/K β/β″-Al2O3 soaked in H2SO4 were studied. The rate of ion exchange in hot concentrated H2SO4 was determined by monitoring the change of solution alkali content. The H3O+ diffusion coefficient was estimated from the resulting time dependence data and the ceramic conductivity calculated. Dilute H2SO4 with a constant applied voltage was also studied and the ceramic conductivity calculated from the change of current with time. The estimated conductivities obtained by the two methods are compared with reported values for H3O+-β- and β″-Al2O3 single crystals. Utilising an H3O+ jump model, the estimated values reflect intragranular conduction.  相似文献   

16.
In this paper, CeF3:Tb3+ nanodiskettes were prepared by the hydrothermal microemulsion method for the first time and the photoluminescent properties of CeF3:Tb3+ nanodiskettes were investigated. The structural properties of CeF3:Tb3+ nanodiskettes were characterized by X-ray diffractions and transmission electron microscopy. The photoluminescent properties of CeF3:Tb3+ with different Tb3+ ions concentration were investigated by excitation spectra, emission spectra and lifetime measurement. The energy transfer processes from Ce3+ to Tb3+ and from Tb3+ to Tb3+ were analyzed and discussed. Results show that CeF3:Tb3+ nanodiskettes may be applied as phosphors for high resolution displaying. PACS 78.55; 78.66; 79.60  相似文献   

17.
A K SINGH  K KUMAR  S B RAI 《Pramana》2014,82(2):409-412
In the present work, results of upconversion emission in various powder samples have been discussed. The powder upconversion phosphors such as La2O3:Er3+/Yb3+, LaF3:Er3+/Yb3+, CeO2:Er3+/Yb3+, CeF3:Er3+/Yb3+ were prepared and their upconversion emission, using 976 nm wavelength excitation, was investigated in depth. These phosphors have shown good upconversion emission in the visible region except for the CeF3:Er3+/Yb3+ phosphor. Two intense bands around 525 and 550 nm due to the 2 H 11/24 I 15/2 and 4 S 3/24 I 15/2 transitions, respectively, are found to be in a thermally coupled state in these samples. The intensity ratio of these two bands permitted us to estimate the temperature of the environment. The pump power studies of the emission bands of these samples are also made to understand the dynamics of the upconversion emission.  相似文献   

18.
利用ReaxFF分子动力学模拟方法对正庚烷在高温条件下的热解行为进行了研究.细致分析了温度对正庚烷高温裂解过程以及产物分布的影响.结果显示温度对正庚烷的热解过程的影响是分阶段的.高温能加速正庚烷的分解,但是当温度达到一定阶段之后这种影响逐渐变小.正庚烷的热解可以分为三个阶段.主要产物C2H4、C3和C4的质量百分数随转化率的变化规律与实验值符合很好.利用一阶动力学模型得到的正庚烷热解的表观活化能和指前因子分别为53.96 kcal/mol和55.34×1013 s-1,与实验值相符.  相似文献   

19.
稀磁合金的杂质互作用效应   总被引:6,自引:0,他引:6       下载免费PDF全文
本文用格林函数方法讨论Tk(Kondo温度)时杂质互作用对Kondo效应的影响。对s-d互作用哈密顿量作自洽场近似时,同时计入导致Kondo效应和产生杂质互作用的切断项,求得了杂质系统的Kondo温度和低温电阻。结果表明:在稀磁合金中,杂质间的互作用效应使Kondo温度下降,并且使T《Tk时的电阻率温度变化曲线由(1-AT2)型变为(1+BT2)型(A,B>0),从而可能在Tk温区产生电阻极大。 关键词:  相似文献   

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