Methyl Concentration Measurements During Microwave Plasma-Assisted Diamond Deposition

Absolute line-of-sight averaged measurements of methyl radical concentrationsin a microwave plasma-assisted diamond deposition reactor arepresented. The measurements are based on the use of broadband ultravioletabsorption spectroscopy to characterize the distinguishing absorptionfeature of methyl at 216 nm associated with the X(²A₂)(²A₁) electronictransition. The dependence of the line-of-sight methyl concentration andmole fractions with the percentage of methane in the feed-gas, plasma powerdensity, and position of substrate relative to the optical probe volume isstudied. The measurements suggest that the near-substrate methyl molefraction is only weakly sensitive to changes in substrate temperature andare largely influenced by the gas-phase temperature. A comparison is madebetween the measured mole fractions and recent predictions based on aone-dimensional model of this process. The measured mole fractions areconsistently greater than those predicted by about a factor of ten. Thisdiscrepancy is explained in part by the line-of-sight limitations in theexperimental facility.     

Diamond Deposition on Substrates with Different Geometries in a Thermal Plasma Reactor

The effects of process parameters on diamond film deposition have been considered in an atmospheric-pressure dc thermal plasma jet reactor. Two different precursor injection systems have been evaluated, counterflow and side injection. The precursor flow rate using ethanol has been found to strongly affect crystal size as well as orientation of crystal growth planes. Further, crystal size on sharp edges has been found to be up to five times larger than on planar surfaces. The effects of substrate geometry on the morphology and area of deposited diamond have been investigated as well. The results of this study show that dc thermal plasma jets can provide high diamond deposition rates, for example on wires and drills, although crystal size and film thickness show substantial variation.     

Deposition of Diamond-Like Carbon Film in a Closed-Space CH4 RF Plasma

Deposition of diamond-like carbon (DLC) film and mass spectrometry measurements were carried out in a closed-space CH₄ rf (13.56 MHz) plasma (without both gas injection and vacuum pumping during the process). At pressures less than 0.6 Torr, the thickness of the DLC film deposited increased with increasing elapsed deposition time, and reached a maximum value, but after this the film thickness started to decrease, which was considered to be caused predominantly by ion-induced sputter etching. The maximum film thickness appeared at larger elapsed time for higher deposition pressure. The mass concentrations of hydrocarbon ions indicated anomalous behavior at early deposition times, but those of higher hydrocarbon ions are clearly increased at the point where the film thickness started to decrease. These results suggested that the ratio of precursor CH₃al density to the total hydrocarbon ion density (_CH3/_ion in the CH₄a was an important factor for the carbon film formation, and when this ratio reduced to a certain critical value with increasing elapsed deposition time, the deposited film was then re-etched predominately by the secondary higher hydrocarbon ions. At 1.0 Torr where a polymer-like soft carbon film was deposited, such re-etching of the deposited film was not observed.     

微波等离子体辅助化学气相沉积法低温合成定向碳纳米管阵列

自碳纳米管被发现以来[1] ,这种准一维纳米新材料由于其优异的力学、电学、储氢等理化性质而显示出非常重要的理论研究与实际应用价值[2 ,3] .碳纳米管阵列更可作为场致发射器件 ,有望应用于冷阴极平板显示器或纳米电子学等前沿领域[4 ] ,成为碳纳米管研究中的热点 .在已有报道的多种制备碳纳米管阵列的方法中 ,以孔性硅或孔性 Al2 O3作为模板剂 ,通过化学气相沉积制备的方法较为普遍[5～ 7] ,但此类方法往往需要在较高温度 (高于 70 0℃[6 ,7] )下进行 ,对于碳纳米管阵列最诱人的应用前景之一平板显示器而言 ,要求在显示玻璃表面直接生长…     

A Three-Dimensional Two-Phase Model for Thermal Plasma Chemical Vapor Deposition with Liquid Feedstock Injection

In this paper, a comprehensive model for thermal plasma chemical vapor deposition (TPCVD) with liquid feedstock injection is documented. The gas flow is assumed to be steady, of a single temperature. Radiation and charged species contributions are excluded, but extensive homogeneous and heterogeneous chemistry is included. The liquid phase is traced by considering individual droplets. Discussion on the model's application to diamond production from acetone in a hydrogen–argon plasma is included. The major conclusions are: (1) Liquid injection possesses a capability to deliver the hydrocarbon precursor directly onto the deposition target. (2) For the case of complete evaporation of the droplet before reaching the substrate, the deposition rate is similar to that obtained with gaseous precursors. (3) The computational results compare well with experimental data. The modeling results can be used to optimize the injection parameters with regard to the deposition rate.     

一种可用于微波等离子体炬原子发射光谱法的热雾化系统

建立了一种新的热雾化系统，用蠕动泵代替高压泵，去掉了加热管部分，使整个热雾化系统更加紧凑，经济，并将其用于微波等离子体炬（ＭＰＴ）－原子发射光谱法（ＡＥＳ），考察了实验参数的影响，与气动雾化相比，对Ｍｇ，Ｐｂ的检出限改善了５～１０倍，同时发现本装置具有元素选择性增强的现象。     

用同轴表面波激励器和微波等离子体炬获得的微波等离子体的性能研究

同轴表面波激励器和微波等离子体炬是两种获得微波等离子体(MWP)的装置,本文比较了用这两种装置获得的MWP作原子发射光谱法光源时的分析性能,结果表明这两种装置各有优点,但微波等离子体炬效果更好。     

Electron energy distribution functions and rate and transport coefficients of H2/H/CH4 reactive plasmas for diamond film deposition

Electron energy distribution functions (eedf) and rate and transport coefficients for H₂/H/CH₄ mixtures have been calculated by solving a stationary Boltzmann equation as a function of reduced electric field E/N, of molar fraction, and of different concentrations of electronically excited states. Superelastic electronic collisions superimpose structures to eedf especially for E/N values < 40 Td.     

Deposition of Diamondlike Carbon Film and Mass Spectrometry Measurement in CH4/N2 RF Plasma

The deposition of diamondlike carbon (DLC) film and the measurements of ionic species by means of mass spectrometry were carried out in a CH₄/N₂ RF (13.56 MHz) plasma at 0.1 Torr. The film deposition rate greatly depended on both CH₄/N₂ composition ratio and RF power input. It was decreased monotonically as CH₄ content decreased in the plasma and then rapidly diminished to negligible amounts at a critical CH₄ content, which became large for higher RF power. The rate increased with increasing RF power, reaching a maximum value in 40% CH₄ plasma. The predominant ionic products in CH₄/N₂ plasma were NH⁺ ₄ and CH₄N⁺ ions, which were produced by reactions of hydrocarbon ions, such as CH⁺ ₃, CH⁺ ₂, CH⁺ ₅, and C₂H⁺ ₅ with NH₃ molecules in the plasma. It was speculated that the production of NH⁺ ₄ ion induced the decrease of C₂H⁺ ₅ ion density in the plasma, which caused a reduction in higher hydrocarbon ions densities and, accordingly, in film deposition rate. The N⁺ ₂ ion sputtering also plays a major role in a reduction of film deposition rate for relatively large RF powers. The incorporation of nitrogen atoms into the bonding network of the DLC film deposited was greatly suppressed at present gas pressure conditions.     

微波辅助液相沉积法快速制备纳米氧化钛晶体

Anatase nanoparticles were successfully prepared via a facile microwave assisted liquid phase deposition （MW-LPD） process with hexafluorotitanate ammonium （NH4）2TiF6 as precursor. Compared with the conventional LPD processes, the MW-LPD technique could provide high yield quickly and crystallinity in a diluted precursor solution at a low temperature. The products were characterized by XRD and TEM. Their photocatalytic activities were also investigated by the photodegradation of methylene blue （MB） as a model molecule.     

表面波激发微波等离子体-醋酸钴解离沉积钴薄膜的研究

在铁磁金属中只有钴具有单轴各向异性和高磁各向异性。以钴基合金薄膜作为高磁性材料已广泛用于储存和记录元件。钴薄膜的制备一般采用真空沉积法、化学镀膜法和射频溅射法等。这些方法各有特点,但制备过程中基片温度较高,沉积速率低,使钴薄膜的实际应用较困难。利用表面波激发微波等离子体技术制备钴薄膜尚未见文献报道。本文采用自制微     

Atmospheric Pressure Plasma Deposition of Polyfuran

The atmospheric pressure radiofrequency (RF) plasma polymerization of furan was carried out with the objective of synthesizing polyfuran thin film. The structure, compositions and morphology of the plasma deposited polyfuran film were investigated by Fourier transform infrared (FTIR), atomic force microscopy (AFM), ultraviolet‐visible absorption spectroscopy (UV‐vis) and thermogravimetric analysis (TGA). The formation of polyfuran was confirmed using FTIR and UV‐visible analysis. The properties of plasma‐deposited polyfuran were compared with those of chemically synthesized polyfuran. Although the plasma deposited thin film polyfuran shows lower thermal stability than that of chemically synthesized polyfuran. It has better solubility in CHCl₃, also. Thin uniform polyfuran films are obtained in plasma assisted polyfuran deposition, while particles are obtained in chemical polyfuran polymerization.     

RF Plasma Deposition of PEO-Like Films: Diagnostics and Process Control

Organic thin films deposited by means of radio-frequency glow discharges fed with Triglyme vapors have been investigated to explore the feasibility for deposition of organic thin films with polyethylene oxide-like features. The film chemical composition has been analyzed by means of X-ray Photoelectron Spectroscopy and FT Infrared Absorption Spectroscopy. Plasma phase diagnostics has been accomplished by means of Optical Emission Spectroscopy. It is shown that the surface density of ether carbon, which is considered the marker of the content of ethylene oxide units in the coating, decreases as the power input is increased. It is also shown that the retention of monomer structure in the film can be easily controlled in situ by actinometric optical emission spectroscopy.     

甲烷在微波等离子体下直接转化成C2烃

研究了非平衡微波等离子体中影响甲烷脱氢转化的几个因素，如功率、ＣＨ４／Ｈ２比和体系压力。在最佳条件下，甲烷转化率和乙炔的选择性分别达到７７．４６％和７４．０４％。     

微波等离子体对聚乙烯材料的表面改性

对高分子材料进行表面修饰,可以赋予材料表面新的物理和化学性能,提高材料的亲水性、粘结性、电镀和生物匹配性等．在表面改性方法中,新近发展的等离子体改性技术由于具有操作简单,工艺干法化,不影响材料本体结构和性能等优点而日益受到人们的重视［１,２］．微波等...     

微波等离子体化学气相沉积法低温制备直纳米碳管膜

Among the three main methods for the synthesis of carbon nanotubes (CNTs)， chemical vapor deposition (CVD) has received a great deal of attention since CNTs can be synthesized at significantly low temperature. Plasma chemical vapor deposition methods can synthesize CNTs at lower temperature than thermal CVD. But in the usual catalytic growth of CNTs by CVD， CNTs are often tangled together and have some defects. These will limit the property research and potential applications. How to synthesize the straight CNTs at low temperature becomes a challenging issue. In this letter， straight carbon nanotube (CNT) films were achieved by microwave plasma chemical vapor deposition (MWPCVD) catalyzed by round Fe-Co-Ni alloy particles on Ni substrate at 610℃. It was found that， in our experimental condition， the uniform growth rate along the circumference of round alloy particles plays a very important role in the growth of straight CNT films. And because the substrate is conducting， the straight CNT films grown at low temperature may have the benefit for property research and offer the possibility to use them in the future applications.     

A Study on Microwave Induced Plasma Ionization Detector for Gas Chromatograph

Among various ionization detectors for gas chromatography(GC), the most promising one is perhaps the nonradioactive ionization detector which makes use of a microwave induced plasma(MIP). The use of MIP for gas chromatography was first studied by McCormack, et al. in 1965, Freeman developed a photoionization detector utilizing helium microwave discharge. In 1971, we developed a microwave     

Experimental and Theoretical Studies of a Pulsed Microwave Excited Ar/CF4 Plasma

The present work deals with a pulsed microwave discharge in an Ar/CF ₄ gas mixture under a low pressure (1–10 mbar). The discharge chamber developed has a cylindrical geometry with a coupling window alternatively made of quartz or alumina. The setup allows one to investigate the plasma–wall interactions (here etching of the quartz window) and the ignition process of the pulsed microwave plasma. Microwave pulses with a duration of 50–200 s and repetition rate between 1 and 10 kHz are typical for the experiments. The space-time behavior of the fluorine number density in the discharge has been investigated experimentally by optical actinometry. The discharge kinetics is modeled using electron-transport parameters and rate coefficients derived from solutions of the Boltzmann equation. Together with the solution of the continuity and electron balance equations and the rate equations describing the production of CF _x (x=2, 3, 4) radicals and F atoms, a good agreement between experimental and theoretical data can be achieved.     

脉冲电晕等离子体作用下CH4/H2反应的机理

本文利用发射光谱技术,对脉冲电晕等离子体作用CH4/H2反应进行了原位诊断,根据等离子体作用下CH4、H2和CH4/H2体系中部分激发态物种的光谱检测数据和有关实验的结果,结合等离子体特性及小分子光化学反应规律,对等离子体作用CH4/H2转化制备C2烃反应的机理进行了讨论。     

Deposition of Gallium Nitride Thin Films by MOCVD in Microwave Plasma

The deposition of GaN thin films in a nitrogen–hydrogen microwave plasma using Ga(CH ₃ ) ₃ as a gallium precursor was investigated. The deposit was identified as stoichiometric GaN by XPS and XRD. The substrate was dielectrically heated in the microwave discharge and the substrate temperature was lower than that in usual thermal MOCVD. The NH radicals, which were the primary N-atoms precursors, and fragments of Ga(CH ₃ ) ₃ were identified in the plasma by OES. The NH radical formation and the decomposition of Ga(CH ₃ ) ₃ in the plasma may be one of the reasons for the lower deposition temperature of GaN. The position dependence of the substrate temperature showed similar tendency as the position dependence of the electron temperature. The plasma state contributes to the deposition of GaN thin films. The deposited GaN exhibited a wide optical band gap of 3.4eV. Material highly oriented along the c axis was detected in the deposit, and a PL spectrum which has the band head at about 450 mm was obtained.