0-3型PZT/P[VDF(77)-TrFE(23)]铁电复合物的非线性介电系数

用自建的非线性介电测试装置测得了０ － ３ 型ＰＺＴ／Ｐ［ＶＤＦ（７７） － ＴｒＦＥ（２３）］ 铁电复合物厚片在不同场强和温度下的线性和非线性介电系数。对于ＰＺＴ 体积含量Φ＞ ０ ．３ 的复合物,介电系数ε１ 随测试场强的升高显著增大。在Φ＜ ０ ．１ 时,可用Ｍａｘｗｅｌｌ－ Ｇａｒｎｅｔｔ 方程拟合实验结果。Ｂｒｕｇｇｅｍａｎ 方程适合于低电场（ ＜ １ ＭＶ／ｍ ） 下复合物介电系数的预测。随着退极化场系数Ｌｚ 的改变,用Ｙａｍａｄａ 模型可拟合不同场强下复合物介电系数随Φ的变化关系。ε１ 的温度依赖性显示了明显的热滞后效应。Φ值增大导致升温过程的居里温度Ｔｃ 降低。Φ＜ ０ ．３ 时,三阶非线性介电系数ε３ 随测试场强的升高而减小,而Φ＞ ０ ．４ 试样的ε３ 在６ＭＶ／ｍ 场强下出现极小值。高Φ值的复合物具有较大的ε３ 。高ＰＺＴ 含量的复合物在相变区出现较大的ε３值。ε３ 温度谱同样显示了与ε１ 类似的表观热滞后现象。     

0—3型PZT／P[VCF（77）—TrFE（23）]铁电复合物的非线性介电系数

用自建的非线性介电测试装置测得了０－３型ＰＺＴ／Ｐ「ＶＤＦ（７７）－ＴｒＦＥ（２３）」铁电复合物厚片在不同场强和温度下的线性和非线性介电系数。对于ＰＺＴ体积含量Φ〉０．３的复合物,介电系数ε１随测试场强的升高显著增大。在Φ〈０．１时,可用Ｍａｘｗｅｌｌ－Ｇａｒｎｅｔｔ方程拟合实验结果。     

钛酸铅/聚[偏氟乙烯(70)-三氟乙烯(30)]复合物的非线性介电性质

用自建的非线性介电测试装置研究了陶瓷相被极化 (B1 )以及陶瓷相和共聚物相都被极化 (B2 )的钛酸铅 /聚 [偏氟乙烯 ( 70 ) 三氟乙烯 ( 3 0 ) ](PT/P[VDF( 70 ) TrFE( 3 0 ) ]) 0 3型铁电复合物厚片在不同测试场强下的非线性介电系数 .对于PT含量 >0 3的复合物 ,介电系数ε1随场强的升高明显增大 .在 <0 1时 ,可用Maxwell Garnett方程拟合实验结果 .Bruggeman方程适合于低电场 ( <1MV/m)下复合物介电系数的预测 .通过Lz 的变化 ,用Yamada模型可拟合不同场强下复合物介电系数随的变化关系 .二阶非线性介电系数ε2 随的升高而增大 ,B2的ε2 大于B1 ,说明B2具有较高的剩余极化 .三阶非线性介电系数ε3 随场强的升高而减小 ,且高值的复合物具有较大的ε3 .两相都被极化试样的ε3 小于仅陶瓷相被极化的试样 .     

核-壳结构的硅烷偶联剂交联的SrTiO3/PVDF复合物薄膜的铁电和介电性能

通过溶液浇筑法制备了核-壳结构的硅烷偶联剂3-氨丙基三乙氧基硅烷（3-APTS）交联的SrTiO₃/PVDF复合物薄膜,对其进行了XRD、FTIR、TG、DSC、SEM、介电和铁电性能测试。研究发现,使用硅烷偶联剂有助于SrTiO₃在复合物薄膜中实现均匀分散,其可能与硅烷偶联剂可以被用作交联剂连接聚合物和无机材料形成核-壳结构有关。SrTiO₃（ST）的引入有助于提高复合物薄膜的结晶性,但是会导致电活性β-晶相含量的轻微减少。当ST的质量含量达到30%时,复合物薄膜的介电常数可以增大至纯PVDF的2.5倍,并且不会引起介电损耗的明显增加;同时,该复合物薄膜的剩余极化率（P_s）也可以增大到原来的2倍左右。我们的研究表明,在PVDF中引入硅烷偶联剂表面改性的ST是制备具有良好分散性的复合物薄膜以及提升其铁电和介电性能的一种有效方法。     

核-壳结构的硅烷偶联剂交联的SrTiO3/PVDF复合物薄膜的铁电和介电性能

通过溶液浇筑法制备了核-壳结构的硅烷偶联剂3-氨丙基三乙氧基硅烷（3-APTS）交联的SrTiO₃/PVDF复合物薄膜,对其进行了XRD、FTIR、TG、DSC、SEM、介电和铁电性能测试。研究发现,使用硅烷偶联剂有助于SrTiO₃在复合物薄膜中实现均匀分散,其可能与硅烷偶联剂可以被用作交联剂连接聚合物和无机材料形成核-壳结构有关。SrTiO₃（ST）的引入有助于提高复合物薄膜的结晶性,但是会导致电活性β-晶相含量的轻微减少。当ST的质量含量达到30%时,复合物薄膜的介电常数可以增大至纯PVDF的2.5倍,并且不会引起介电损耗的明显增加;同时,该复合物薄膜的剩余极化率（P_s）也可以增大到原来的2倍左右。我们的研究表明,在PVDF中引入硅烷偶联剂表面改性的ST是制备具有良好分散性的复合物薄膜以及提升其铁电和介电性能的一种有效方法。     

含噻吩环的新推-拉型多环电光聚合物中间体的三阶非线性光学系数的理论研究

以INDO/SCI方法为基础,利用完全态求和(SOS)公式,计算了一系列新推-拉型多环电光聚合物中间体的三阶非线性光学系数γ(一ω;ω,-ω,ω)和γ(0;0,0,0),研究了γ与分子骨架、给受取代基和噻吩环数目(共轭分子链长的关系)及其与外场频率的关系,表明在链不十分长时,γ与链长的2.69次方成正比。     

若干有机非线性光学材料的分子设计及 三阶非线性光学性质的理论研究①

On the basis of INDO/SCI method, using sum-over-states (SOS) method,the third-order nonlinear optical susceptibilities γ(-ω;ω,-ω,ω) and γ(0;0,0,0)of a series of organic molecules have been calculated. The effects of molecular backbone, donor substitutes, the number of thiophene-ring (namely the conjugated molecular length dependence) on the γ have been studied.     

Nd_2O_3陶瓷介质的介电性质

Nd_2O_3是一种用途非常广泛的稀土原料,在电子工业、激光技术、冶金工业、农业和轻工业等多个领域中都有应用。如电子工业中,它作为一种添加剂来改善电子陶瓷的性能;在磁性材料中,钕铁硼磁体被称为当代“磁王”;在激光晶体中,通过Nd_2O_3原料改性晶体性能也已被广泛地采用。过去人们对稀土氧化物的研究,一般是从化学或化学物理的角度出发,而对于它们的物理性能,特别是介电性质的研究尚少。我们曾对CeO_2陶瓷介质     

Ba1-1.5yLayZrxTi1-xO3固溶体的合成、结构与介电特性

用软化学合成方法在100℃以下制备了一系列Ba_1-1.5yLa_yZr_xTi_1-xO₃(0<x<0.3, 0≤y≤0.08)固溶体纳米粉末。XRD物相分析及晶间距-组成图表明，产品为完全互溶取代固溶体。用TEM观察可知其粒子为均匀球形，平均粒径为60纳米。通过制陶实验，对该系列固溶体的介电特性分别进行了测试。结果表明：采用化学掺杂方法在BaTiO₃中掺入适量锆、镧后，样品的室温介电常数可提高到30，000以上，并呈现出规律性。     

Optically Controlled Coercive Field of MAPbI3/P(VDF-TrFE) Ferroelectric Composite Films

Ferroelectric polymers, such as poly(vinylidene fluoride-trifluoroethylene)[P(VDF-TrFE) or PVTF] have attracted growing interest in developing flexible devices because of their excellent ferroelectricity and piezoelectricity. High coercive field(E_c) inherent to PVTF for switching its polarization, however, is not beneficial for practical memory or sensor device application. Different strategies, including irradiation and interface control, have been thus developed to reduce E_c. Despite many efforts, a facile approach to tailoring intrinsic E_c of PVTF has not been documented. In this work, an optically controlled E_c was reported, which is achieved for the first time by introducing photosensitive MAPbI₃ nanocrystals into PVTF matrix. When exposed to the irradiation of 532 nm laser light, a decreased E_c of the composites can be achieved reversibly by increasing the light density. The decreased level of E_c increases as the MAPbI₃ content enhanced, and a 10.7% reduction of E_c can be achieved in 15%(mass fraction) MAPbI₃/PVTF samples. These results could be attributed to loading an internal stress on PVTF, which was generated by the photostriction of MAPbI₃ nanocrystals. This explanation was further supported by in-situ XRD results under irradiation of 532 nm laser light. Our findings may offer the opportunity to optically modulate the ferroelectric properties of PVTF composites for optimized device performances.     

结构陶瓷复合材料的现状和发展趋势

本文简要叙述了结构陶瓷高温下强度及硬度高、蠕变小、抗氧化、耐腐蚀、耐磨损等优越性能,同时指出了陶瓷应用于承载结构的致命弱点,即陶瓷的脆性。较详细地综述了克服陶瓷脆性的主要技术方向--开发第二相粒子、纤维(晶须)补强增韧的微米陶瓷复合材料及纳米陶瓷复合材料,并分析了纳米陶瓷的发展前景。     

Dielectric and Ferroelectric Properties of Sol-Gel Derived YMnO3 Films

There has been considerable interest in ferroelectric (FE) films especially for non-volatile memories and ultra high density DRAM applications. Such FE films typically consist of lead zirconate titanate (PZT) with novel oxide contacts, or layered perovskite such as Sr2Bi2TaO9. Recently, there have been reports of sputtered YMnO3 films which exhibit a single polarization axis and do not contain any volatile species of Pb or Bi. Single crystal YMnO3 exhibits satisfactory polarization (6 C/cm2) and low coercive field (<20 kV/cm). Additionally, the dielectric constant of YMnO3 is quite low (<30) which should facilitate ferroelectric switching. In this study, sol-gel derived YMnO3 films were prepared on platinized Si wafers and their dielectric and ferroelectric properties were characterized. Their electrical properties will be discussed with respect to Y/Mn stoichiometry ratio, hexagonal phase development and processing conditions. The potential of YMnO3 as a material in non-volatile memories is evaluated.     

溶胶-凝胶法制备含偶氮生色团的三阶非线性材料

通过溶胶-凝胶法制备了含三阶非线性光学发色团DRl9硅氧烷染料的有机-无机复合材料(3),其结构经1H NMR和IR表征.研究了pH值对3微观形态及光学性能的影响.     

稀土复合磷酸盐无机抗菌材料对陶瓷活化水性能的影响

将稀土复合磷酸盐无机抗菌材料添加到陶瓷釉浆中制备具有活化水功能的抗菌陶瓷制品。用核磁共振技术(NMR)以及溶解氧测试技术研究添加稀土复合磷酸盐无机抗菌材料对陶瓷活化水性能影响机制,以及活化水功能陶瓷制品对植物种子发芽性能的影响。结果表明：添加稀土复合磷酸盐无机抗菌材料制备的抗菌陶瓷制品可使自来水的^17O-NMR半峰宽由115．36Hz降低到99．15Hz;提高水中溶氧量20％;蚕豆和花生种子4天发芽率可分别提高12．5％和7．5％。稀土复合磷酸盐无机抗菌材料具有增加陶瓷制品活化自来水性能、降低水分子缔合度,促进植物种子发芽的功能。     

The Effect of Substrate on the Properties of Non-volatile Ferroelectric P(VDF-TrFE)/P3HT Memory Devices

Ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))/semiconducting poly(3-hexyl thiophene) (P3HT) blend systems have drawn great attention with their potential use for electronic applications, particularly non-volatile memory devices. It is essential to grasp a full understanding of the crystallization habits of the two polymers on different substrates for purposeful control of the structures of the blend and therefore the properties of the devices. Here, the effects of structure and morphology of the blend films generated at different substrate surfaces on the ferroelectric and switching properties of related devices are reported. It is identified that P(VDF-TrFE)/P3HT blend films prepared on graphene substrate show not only an obvious optimization in the ferroelectric behavior of P(VDF-TrFE), but also an enhancement of the charge transport within P3HT domains. By employing sandwich structure constructed by silver electrode and P3HT/P(VDF-TrFE) blend film on graphene substrate, high-performance ferroelectric memory devices have been obtained, which exhibit a great electrical switching behavior with high ON/OFF ratio of about 1000 and low coercive voltage of approximately 5 V. These findings provide useful guidance for fabricating high-performance ferroelectric memory devices.

     

Fe/SBA-3介孔组装体系及其磁特性

用不同的实验工艺制备了一组Fe/SAB-3 介孔复合体系.X射线衍射表明,Fe/SAB-3具有六方排列的孔道结构.通过N2吸附实验可知,这种材料具有极高的比表面积.从傅立叶红外光谱可证实,Fe3＋进入了SAB-3的骨架.样品磁测量结果表明,与通常的α-Fe2O3纳米颗粒相比,纳米Fe/SAB-3介孔复合体系中的纳米α-Fe2O3 粒子的矫顽力（Hc）从1765 Oe下降到87 Oe,比饱和磁化强度（Ms）增加了75.4％.