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1.
We determine the spin susceptibility in a two-dimensional electron system in GaAs/AlGaAs over a wide range of low densities from 2x10(9) cm(-2) to 4x10(10) cm(-2). Our data can be fitted to an equation that describes the density dependence as well as the polarization dependence of the spin susceptibility. It can account for the anomalous g factors reported recently in GaAs electron and hole systems. The paramagnetic spin susceptibility increases with decreasing density as expected from theoretical calculations.  相似文献   

2.
We have measured the de Haas–van Alphen (dHvA) oscillations of a gated two-dimensional electron system formed in a modulation-doped AlGaAs/GaAs heterojunction by means of a novel and highly sensitive cantilever magnetometer. We achieve a sensitivity of at a magnetic field by detecting the deflection of the cantilever using a fiber optic interferometer. The dHvA oscillation at ν=1 yields a thermodynamic energy gap that scales linearly with the applied magnetic field for . The slope corresponds to an exchange enhanced g factor g*=3.5±0.3 originating from electron–electron interaction in the spin-polarized state of the 2DES.  相似文献   

3.
We present a self-consistent theory for the frequency and wave number dependent paramagnetic response of an interacting electron gas. The theory leads to an expression for the ‘local field’ responsible for the susceptibility enhancement, which is determined numerically by solving three coupled non-linear integral equations. Calculated values of the static susceptibility are in good agreement with experiment for simple metals in the entire metallic density range.  相似文献   

4.
We measure the thermodynamic magnetization of a low-disordered, strongly correlated two-dimensional electron system in silicon in perpendicular magnetic fields. A new, parameter-free method is used to directly determine the spectrum characteristics (Landé g factor and the cyclotron mass) when the Fermi level lies outside the spectral gaps and the interlevel interactions between quasiparticles are avoided. Intralevel interactions are found to strongly modify the magnetization, without affecting the determined g* and m*.  相似文献   

5.
Landau levels have been theoretically investigated in a two-dimensional electron gas near a quantum dot (QD) layer. By a diagrammatical method, we have formulated the self-energy for the Landau level and deduced its relation to the AC conductivity σloc(ω) in the QD layer. As an example, we have examined the density of states in the case where σloc(ω) is described by AωS(S=0.8). It is found that the Landau levels are broadened due to the interaction with the localized electrons in the QDs.  相似文献   

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We investigate the influence of electron-electron interactions on the density of states of a ballistic two-dimensional electron gas. The density of states is determined nonperturbatively by means of path integral techniques allowing for reliable results near the Fermi surface, where perturbation theory breaks down. We find that the density of states is suppressed at the Fermi level to a finite value. This suppression factor grows with decreasing electron density and is weakened by the presence of gates.  相似文献   

9.
By making use of a sum rule, the exchange contribution to the grand partition function is obtained for a two-dimensional electron fluid in a strong magnetic field at low temperatures. The dHvA type oscillations of the dielectric constant, internal energy and effectiveg factor are derived explicitly. The amplitude of the oscillations of the effectiveg factor is found to depend on density rather strongly.  相似文献   

10.
We report measurements of the spin susceptibility, chi proportional, variant g(v)g*m*, in an AlAs two-dimensional electron system where, via the application of in-plane stress, we transfer electrons from one ellipsoidal conduction-band valley to another (g(v) is the valley degeneracy, and m* and g* are the electron effective mass and g factor). At a given density, when the two valleys are equally populated (g(v)=2), the measured g*m* is smaller than when only one valley is occupied (g(v)=1). This observation counters the common assumption that a two-valley two-dimensional system is effectively more dilute than a single-valley system because of its smaller Fermi energy.  相似文献   

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12.
Thermodynamic measurements reveal that the Pauli spin susceptibility of strongly correlated two-dimensional electrons in silicon grows critically at low electron densities--behavior that is characteristic of the existence of a phase transition.  相似文献   

13.
We have measured the critical atom number in an array of harmonically trapped two-dimensional (2D) Bose gases of rubidium atoms at different temperatures. We found this number to be about 5 times higher than predicted by the semiclassical theory of Bose-Einstein condensation (BEC) in the ideal gas. This demonstrates that the conventional BEC picture is inapplicable in an interacting 2D atomic gas, in sharp contrast to the three-dimensional case. A simple heuristic model based on the Berezinskii-Kosterlitz-Thouless theory of 2D superfluidity and the local density approximation accounts well for our experimental results.  相似文献   

14.
The entanglement between two electrons in a degenerate electron gas is studied as a function of their separation. We have taken into account the screened Coulomb interaction between electrons. It is found that interaction leads to a suppression of the entanglement distance. The interaction leads also to a direct dependence of entanglement distance on density.  相似文献   

15.
The melting curve of the two-dimensional electron system is interpolated between the known classical and ground state limits. The coexistence curve encloses a finite solid-phase domain, as in the three-dimensional case.  相似文献   

16.
A. V. Chaplik 《JETP Letters》2003,77(11):636-637
The possibility of measuring the off-diagonal component of the magnetoconductivity tensor of a two-dimensional electron gas excited by a linear alternating current is discussed.  相似文献   

17.
The crossover behavior of disordered interacting two-dimensional electron systems in a parallel magnetic field is analyzed. Using the so-called crossover one-loop renormalization group equations for the resistance and electron-electron interaction amplitudes, experimentally observed transformation of the temperature dependence of the resistance from a reentrant (nonmonotonic) behavior in relatively weak fields to an insulating-type behavior in stronger fields is qualitatively explained. The text was submitted by the authors in English.  相似文献   

18.
We have measured the electrically detected magnetic resonance of donor-doped silicon field-effect transistors in resonant X- (9.7 GHz) and W-band (94 GHz) microwave cavities. The two-dimensional electron gas resonance signal increases by 2 orders of magnitude from X to W band, while the donor resonance signals are enhanced by over 1 order of magnitude. Bolometric effects and spin-dependent scattering are inconsistent with the observations. We propose that polarization transfer from the donor to the two-dimensional electron gas is the main mechanism giving rise to the spin resonance signals.  相似文献   

19.
By making use of a sum rule, the exchange contribution to the grand partition function is obtained for a two-dimensional electron fluid in a strong magnetic field at low temperatures. The dHvA type oscillations of the dielectric constant, internal energy and effectiveg factor are derived explicitly. The amplitude of the oscillations of the effectiveg factor is found to depend on density rather strongly.This work was supported by the ONR under Contract N00014-79-C-0451  相似文献   

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