Solid-state synthesis in Ni/Fe/MgO(001) epitaxial thin films

Solid-state synthesis in Ni/Fe/MgO(001) bilayer epitaxial thin films has been studied experimentally. The phase sequence Fe/Ni→(～350°C)Ni₃Fe→(～400°C)NiFe→(～ 550°C)γ_par is formed as the annealing temperature increases. The crystal structure in the invar region consists of epitaxially intergrown single-crystal blocks consisting of the paramagnetic γ_par and ferromagnetic NiFe phases, which satisfy the orientation relationship [100](001)NiFe ∥ [100](001) γ_par. It has been shown that the nucleation temperatures of the Ni₃Fe, NiFe, and γ_par phases coincide with the temperatures of solid-state transformations in the Ni-Fe system.     

Self-propagating high-temperature synthesis in Pt/Co/MgO(001) epitaxial thin films

The self-propagating high-temperature synthesis in the two-layer and multilayer Pt/Co(001) thin films has been investigated. It is shown that the initiation of the synthesis occurs at temperatures of 770–820 K. After the synthesis in the two-layer film samples, the PtCo(001) disordered phase exhibits an epitaxial growth at the interface between cobalt and platinum layers. In the multilayer Pt/Co(001) thin films, the self-propagating high-temperature synthesis also brings about the formation of the PtCo(001) disordered phase on the MgO(001) surface. Further annealing at a temperature of 870 K for 4 h results in the transition of the PtCo(001) disordered phase to the ordered phase. Rapid thermal annealing of the Pt/Co(001) multilayer films at a temperature of 1000 K leads to the formation of the CoPt₃ phase. The magnetic characteristics change in accord with the structural transformations in Pt/Co film samples.     

Temperature dependence of multi-jump magnetic switching process in epitaxial Fe/MgO(001) films

Temperature dependence of magnetic switching processes with multiple jumps in Fe/MgO(001) films is investigated by magnetoresistance measurements. When the temperature decreases from 300K to 80K, the measured three-jump hysteresis loops turn into two-jump loops. The temperature dependence of the fourfold in-plane magnetic anisotropy constant K1, domain wall pinning energy, and an additional uniaxial magnetic anisotropy constant KUare responsible for this transformation. The strengths of K1 and domain wall pinning energy increase with decreasing temperature, but KU remains unchanged. Moreover, magnetization reversal mechanisms, with either two successive or two separate 90°domain wall propagation, are introduced to explain the multi-jump magnetic switching process in epitaxial Fe/Mg O(001) films at different temperatures.     

Preparation and characterization of epitaxial Fe(001) thin films on GaAs(001)-based LED for spin injection

We report on the successful fabrication and characterization of ferromagnetic Fe/Tb multilayer contacts with perpendicular magnetic anisotropy (PMA) on the clean As-terminated surface of a GaAs(001)-based light-emitting diode (LED) structure. PMA was inferred from magnetometry and ⁵⁷Fe conversion electron Mössbauer spectroscopy. Such contacts are a potential candidate for optical detection of electron spin injection from the remanent magnetic state into the semiconductor.     

Phase‐controlled epitaxial growth of iron oxide thin films on MgO(001) and LaAlO3(001) substrates

We have deposited epitaxial iron oxide thin films on MgO(001) and LaAlO₃(LAO)(001) substrates, resulting in different phase stabilities. Atomic force microscopy images revealed a smooth surface. Detailed X‐ray diffraction (XRD) measurements were performed to confirm the epitaxial growth and to analyze the atomic growth configuration. We found that (00l) oriented γ‐Fe₂O₃ was the stable phase on MgO(001) substrates, whereas $ (1\bar 102) $ oriented α‐Fe₂O₃ was stable on LAO(001). Magnetic hysteresis loop measurements revealed typical ferrimagnetic behavior for γ‐Fe₂O₃ on MgO, whereas the magnetization of α‐Fe₂O₃ on LAO was relatively small and consistent with an antiferromagnetic order. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Binding of single gold atoms on thin MgO(001) films

In the present Letter the first electron paramagnetic resonance spectra of single metal atoms on a single crystalline oxide surface are presented. For Au atoms on a MgO(001) film investigated here an analysis of the angular dependent resonance positions and the hyperfine coupling to (17)O shows that the atoms are bound on top of oxygen ions on the terrace of the film. This result is in perfect agreement with scanning tunneling microscopy measurements at 5 K presented here. The measured hyperfine matrix components allow an experimental verification of the theoretically proposed binding mechanism of Au atoms on MgO. In particular, the large reduction of the isotropic hyperfine coupling constant of supported Au as compared to free atoms is not due to a charge transfer at the interface but a hybridization of orbitals and a resulting polarization of the unpaired electron.     

Influence of a Cr seed layer on the magnetic anisotropy of epitaxial Fe/Ag films on MgO(001)

The magnetic anisotropy of epitaxial 300 Å thick Fe films on Ag and Ag/Cr buffer layers on MgO(001) has been studied by ferromagnetic resonance and magneto-optic Kerr effect measurements. The samples were grown by molecular beam epitaxy at ambient temperature. A reduction of the effective magnetization for the samples with a Ag buffer layer is attributed to strain and dislocation formation as seen from X-ray diffraction measurements at low and high angles. In the samples with a Cr seed layer, a higher magnetic anisotropy is found which correlates with a reduced roughness.     

Strain-induced polarization rotation in epitaxial (001) BiFeO3 thin films

Direct measurement of the remanent polarization of high quality (001)-oriented epitaxial BiFeO3 thin films shows a strong strain dependence, even larger than conventional (001)-oriented PbTiO3 films. Thermodynamic analysis reveals that a strain-induced polarization rotation mechanism is responsible for the large change in the out-of-plane polarization of (001) BiFeO3 with biaxial strain while the spontaneous polarization itself remains almost constant.     

Magnetic behavior and role of the antiphase boundaries in Fe3O4 epitaxial films sputtered on MgO (001)

Magnetite Fe₃O₄ films were grown on single crystal MgO (001) substrates using facing target sputtering technique. Conversion Electron M?ssbauer Spectroscopy and magneto optical polar Kerr spectra have confirmed the stoichiometric repartition of Fe cations corresponding to the inverse spinel structure and the electronic structure characteristic of bulk Fe₃O₄. Hysteresis loops carried out at room temperature show that, in a 1 T applied magnetic field, only 60% of the saturation magnetization is detected. This behavior is discussed in correlation to the antiphase boundaries (APBs) observed by electron microscopy. Magnetic force microscopy studies show that magnetic domains are larger than the mean distance between APBs. Received 2 July 2001     

Development of magnetic anisotropies in ultrathin epitaxial films of Fe(001) and Ni(001)

Ultrathin films, bcc Fe(001) on Ag(001), fcc Fe(001) on Cu(001) and Fe/Ni(001) bilayers on Ag, were grown by molecular beam epitaxy. A wide range of surface science tools were employed to establish the quality of epitaxial growth. Ferromagnetic resonance and Brillouin light scattering were used to extract the magnetic properties. Emphasis was placed on the study of magnetic anisotropies. Large uniaxial anisotropies with easy axis perpendicular to the film surface were observed in all ultrathin structures studied. These anisotropies were particularly strong in fcc Fe and bcc Fe films. In sufficiently thin samples the saturation magnetization was oriented perpendicularly to the film surface in the absence of an applied field. It has been demonstrated that in bcc Fe films the uniaxial perpendicular anisotropy originates at the film interfaces. In situ measurements indentified the strength of the uniaxial perpendicular anisotropy constant at the Fe/vacuum, Fe/Ag and Fe/Au interfaces asK _us = 0.96, 0.63, and 0.3 ergs/cm² respectively. The surface anisotropies deduced for [bulk Fe/noble metal] interfaces are in good agreement with the values obtained from ultrathin films. Hence the perpendicular surface ansiotropies originate in the broken symmetry at abrupt interfaces. An observed decrease in the cubic anisotropy in bcc Fe ultrathin films has been explained by the presence of a weak 4th order in-plane surface anisotropy,K _1S=0.012 ergs/cm². Fe/Ni bilayers were also investigated. Ni grew in the pure bcc structure for the first 3–6 ML and then transformed to a new structure which exhibited unique magnetic properties. Transformed ultrathin bilayers possessed large inplane 4th order anisotropies far surpassing those observed in bulk Fe and Ni. The large 4th order anisotropies originate in crystallographic defects formed during the Ni lattice transformation.     

Nonlinear optical absorption and refraction of epitaxial Ba0.6Sr0.4TiO3 thin films on (001) MgO substrates

Highly epitaxial Ba_0.6Sr_0.4TiO₃ (BST) ferroelectric thin films were fabricated on (001) MgOsubstrates by pulsed laser deposition. The nonlinear optical absorption coefficients (β) and refraction indices (γ) of the BST thin films on (001) MgO substrates were investigated using the single beam Z-scan technique with femtosecond laser pulses at the wavelengths of 790 nm and 395 nm, respectively, at room temperature. The nonlinear absorption coefficients of BST thin films were measured to be ∼0.087 cm/GW and ∼0.77 cm/GW at 790 nm and 395 nm, respectively. The nonlinear refraction indices of BST thin films exhibit a strong dispersion from a positive value of 6.1×10^-5 cm²/GW at 790 nm to a negative value of -4.0×10^-5 cm²/GW at 395 nm near band gap. The dispersion of γ is roughly consistent with Sheik-Bahae’s theory for the bound electronic nonlinear refraction resulting from the two-photon resonance. These results show that the BST film is a promising material as a candidate for nonlinear optical applications. PACS 42.70.Mp; 78.20.-e; 81.05.-t     

First-principles study of ferromagnetism in epitaxial Si-Mn thin films on Si(001)

Density-functional theory calculations are employed to investigate both the epitaxial growth and the magnetic properties of thin Mn and MnSi films on Si(001). For single Mn adatoms, we find a preference for the second-layer interstitial site. While a monolayer Mn film is energetically unfavorable, a capping-Si layer significantly enhances the thermodynamic stability and induces a change from antiferromagnetic to ferromagnetic order. For higher Mn coverage, a sandwiched Si-Mn thin film (with CsCl-like crystal structure) is found to be the most stable epitaxial structure. We attribute the strong ferromagnetic intralayer coupling in these films to Mn 3d-Si 3s3p exchange.     

Layer-by-layer epitaxial growth of polar FeO(111) thin films on MgO(111)

We report on the structural properties of epitaxial FeO layers grown by molecular beam epitaxy on MgO(111). The successful stabilization of polar FeO films as thick as 16 monolayers (ML), obtained by deposition and subsequent oxidation of single Fe layers, is presented. FeO/MgO(111) thin films were chemically and structurally characterized using low-energy electron diffraction, Auger electron spectroscopy and conversion electron Mössbauer spectroscopy (CEMS). Detailed in situ CEMS measurements as a function of the film thickness demonstrated a size-effect-induced evolution of the hyperfine parameters, with the thickest film exhibiting the bulk-wüstite hyperfine pattern. Ex situ CEMS investigation confirmed existence of magnetic ordering of the wüstite thin film phase at liquid nitrogen temperature.     

Characterization of epitaxial MgO growth on Si(001) surface

MgO epitaxial growth on a Si(001) surface by ultrahigh-vacuum molecular beam epitaxy was investigated. Epitaxial orientation and crystalline quality were characterized based on the three-dimensional reciprocal map obtained by Weissenberg RHEED. The epitaxial orientation and crystallinity were strongly dependent on the initial condition of the substrate. When MgO was deposited on a clean Si(001) surface at room temperature a MgO(001) film grew on the Si(001) substrate with two in-plane orientations:MgO[110]//Si[100] and MgO[100]//Si[100]. This is the first observation of MgO epitaxy with the former orientation, which has a smaller mismatch than the latter orientation. When the substrate was exposed to O₂ or thermally oxidized, the latterorientation predominantly grew on the substrate. Deposition of Mg on the substrate also produced the latter orientation. These results imply that nucleation sites on the initial substrate play an important role in determining the epitaxial orientation.     

Lattice deformation in thin BiFeO3 and Ba0.8Sr0.2TiO3 epitaxial films on (001)MgO single crystalline substrates

Bi_0.98Nd_0.02FeO₃ (BNFO) and Ba_0.8Sr_0.2TiO₃ (BST) epitaxial films produced by rf cathode sputtering on (001)MgO substrates are studied by means of XRD. The thickness dependences of uniform lattice deformations and linear dislocation density, generated due to epitaxial stress relaxation, are plotted.