二维光子晶体禁带特性研究

采用平面波展开法对二维光子晶体分别在E和H极化下的带隙进行了计算. 考虑了填充比、晶格结构、介电常数对最大绝对帯隙的影响. 结果表明,不论是正方晶格还是三角晶格,TM模在介质柱型光子晶体中更容易形成带隙;TE模在空气孔型光子晶体中更容易形成带隙. 填充比一定,最大绝对帯隙宽度并非随着介电常数增大总是增大,而是存在一个峰值. 相对介电常数一定,最大绝对帯隙宽度随填充比的变化也存在一个峰值. 不论空气孔型还是介质柱型结构,三角晶格比正方晶格更容易形成帯隙. 关键词： 平面波展开法 TE模 TM模 最大绝对帯隙     

Photonic band gap failure in photonic crystal devices

The photonic crystal is an artificial material with periodic dielectric constant and the key factor to preserve their band features is its periodicity. When the number of periods of photonic crystal is decreased the photonic band gap cannot prevent the light of the corresponding frequencies from propagating in photonic crystal, in another word, photonic band gap will be failure. The minimum periods of photonic crystal device which can keep photonic band gap effective in miniaturization process is analyzed, the transmittance spectrum is calculated by the Finite-difference time-domain algorithm (FDTD) [1], the minimum periods is got in the simulation and the reason which affects the minimum periods is analyzed in this paper.     

六角蜂窝结构光子晶体异质结带隙特性研究

利用蜂窝结构光子晶体具有两个范围较大绝对带隙的特性，设计新型六角蜂窝结构光子晶体异质结，采用平面波展开和超晶胞相结合的方法来研究异质结的能带结构特性.给出异质结的结构和相应的能带图，分析异质结界面传导模，研究两侧结构作横向拉开和侧向滑移时对传导模的影响，讨论这些结构的实际可行性.计算结果表明，没有任何晶格移动，此种结构异质结在绝对带隙中就有导模存在，两边晶格横向拉开对导模影响较大，而侧向滑移的影响则较小. 关键词： 光子晶体 异质结 光子带隙 超晶胞     

Purity of rubrene single crystals

Liquid chromatography connected with mass spectroscopy reveals that the oxidized form of rubrene is the major impurity in commercial powder of rubrene as well as in rubrene single crystals. One form of rubrene impurity can be transformed into the other. In solution, rubrene undergoes photo-oxidation completely until the red color of the rubrene solution disappears. Single crystals, due to compact packing of molecules and the required molecular shape change during oxidation, oxidize only on the surface.     

Tuning of full band gap in anisotropic photonic crystal slabs using a liquid crystal

We analyze the tunability of full band gap in photonic crystal slabs created by square and triangular lattices of air holes in anisotropic tellurium background, considering that the regions above and below the slab are occupied by SiO₂ and the holes are infiltrated with liquid crystals. Using the supercell method based on plane wave expansion, we study the variation of full band gap by changing the optical axis orientation of liquid crystal. Our results demonstrate the existence and remarkable tunability of full band gap in both square and triangular lattices, largest band gap and tunability being obtained for the triangular lattice.     

A new emission band in the near band edge region in ZnSe single crystal

An emission band with FWHM of 2.7 meV has been observed at 2.8002 eV. Its emission intensity is proportional to the 1.2 power of the excitation intensity. Excitation spectrum and selective excitation spectrum do not show any additional spectral structure. It is proposed that the origin of this emission is the scattering of excitons by other free particles at a structural defect with slightly lower potential for free particles and free excitons.     

Large complete band gap in two-dimensional phononic crystal slabs with elliptic inclusions

Phononic band structure with periodic elliptic inclusions for the square lattice is investigated based on the plane wave expansion method. The numerical results show the systems composed of tungsten (W) elliptic rods embedded in a silicon (Si) matrix can exhibit a larger complete band gap than the conventional circular phononic crystal (PC) slabs. The phononic band structure of the plate-mode waves and the width of the first complete band gap can be tuned by varying the ratio of the minor axis and the major axis, the orientation angle of the elliptic rods and the thickness of the PC slabs. We also study the band structure of plate-mode waves propagating in two-dimensional (2D) slabs with periodic elliptic inclusions coated on uniform substrate.     

Engineering of band gap and cavity mode in phononic crystal strip waveguides

The optimal parameters for the largest band gap were investigated in three typical phononic crystal strip waveguides. Single cavity mode was created inside the band gap region by proper design of a defect. The band structures and the displacement distributions were discussed with the variation of the defect. Results show possibilities to guide extremely slow phonon cavity mode in strip waveguide with chosen displacement components, frequencies and symmetries.     

Confined band gap in an air-bridge type of two-dimensional AlGaAs photonic crystal

The transmittance spectrum for an air-bridge type of AlGaAs photonic crystal (PC) slabs successfully fabricated was measured. It is found that the observed spectrum is consistent with both the theoretical band structure and the calculated one. Moreover, the transmittance due to the modes below the light line is found to be almost 100%, indicating that the guided modes should exist. The respective stop bands are observed in the gamma-M direction for TM-like and TE-like modes, implying that a photonic band gap should exist for the TE-like guided modes. The present PC is very suited for controlling the radiation field.     

中红外波段硅基两维光子晶体的光子带隙

利用电化学腐蚀的方法制备了大多孔硅两维光子晶体.结构图形对称性为正方格子，其结构参数为正方形晶格周期a=44μm，正方形空气柱的边长l=2μm.并用显微红外光谱仪表征了光谱性质，揭示了所制备两维光子晶体样品的中红外波段光子的反射特性. 关键词： 光子晶体 光子带隙 反射谱 时域有限差分法     

Ultrawide low frequency band gap of phononic crystal in nacreous composite material

The band structure of a nacreous composite material is studied by two proposed models, where an ultrawide low frequency band gap is observed. The first model (tension-shear chain model) with two phases including brick and mortar is investigated to describe the wave propagation in the nacreous composite material, and the dispersion relation is calculated by transfer matrix method and Bloch theorem. The results show that the frequency ranges of the pass bands are quite narrow, because a special tension-shear chain motion in the nacreous composite material is formed by some very slow modes. Furthermore, the second model (two-dimensional finite element model) is presented to investigate its band gap by a multi-level substructure scheme. Our findings will be of great value to the design and synthesis of vibration isolation materials in a wide and low frequency range. Finally, the transmission characteristics are calculated to verify the results.     

Acoustic beam splitting in a sonic crystal around a directional band gap

Beam splitting upon refraction in a triangular sonic crystal composed of aluminum cylinders in air is experimentally and numerically demonstrated to occur due to finite source size,which facilitates circumvention of a directional band gap.Experiments reveal that two distinct beams emerge at crystal output,in agreement with the numerical results obtained through the finite-element method.Beam splitting occurs at sufficiently-small source sizes comparable to lattice periodicity determined by the spatial gap width in reciprocal space.Split beams propagate in equal amplitude,whereas beam splitting is destructed for oblique incidence above a critical incidence angle.     

Indirect band gap investigation of orthorhombic single crystals of sulfur

Single crystals of pure and selenium doped orthorhombic sulfur crystal were prepared from carbon disulphide solution. They were investigated at two temperatures (6°C and 85°C) in an optical absorption apparatus. The optical absorption increased with temperature and it was found to be higher for Se doped crystals within the same range of temperatures. The indirect allowed band gap transitions and assisting phonons were observed. Their values were found to shift toward lower energy with increasing temperatures. They are also lower for doped samples. At 6°C, the indirect allowed band gaps are 2.61 eV and 2.56 eV for pure and selenium-doped crystals, respectively. At 85°C, they are 2.44 eV and 2.40 eV for pure and doped crystals, respectively. The phonons associated with the optical transitions could be attributed to the stretching band of S₈ rings.     

Enlargement of complete two-dimensional band gap by using photonic crystal heterostructure

A two-dimensional photonic crystal heterostructure, which consists of two photonic crystals of a square lattice of circular columns with reverse dielectric configurations, is proposed. Photonic band gap properties are calculated using a plane-wave method and the transmission spectra are obtained. After optimization, the relative width of the complete band gap reached 13.8% based on the simple unit-cell shape and crystal lattice. The photonic crystal heterostructure opens up new ways of engineering photonic band gap materials and designing photonic crystal devices.     

Photonic crystal with complex unit cell for large complete band gap

A novel two-dimensional complex photonic crystal with dielectric rods and veins in square and honeycomb lattice is presented to achieve large complete band gaps. The rods with different symmetries, shapes, orientations, and sizes are investigated numerically. The sizes of gaps are intensively affected by these geometric parameters. Extremely large gaps are realized by the parameter optimization with gallium arsenide material. The scattering of veins is more dominant than that of rods which demonstrates the validity of the complex photonic crystal structures. Furthermore, an excellent wide region of dielectric rods and veins, where the sizes of gaps are universally large, is found in square and honeycomb lattice, respectively.     

Investigation of photonic band gap in a semiconductor-organic photonic crystal in ultraviolet region

We give a theoretical analysis of the photonic band gap in a one-dimensional semiconductor-organic photonic crystal containing a period of AlN/3-octylthiophenes (P3OT) bilayer. The band gap is investigated based on the reflectance calculated by using the transfer matrix method. It is shown that, in the ultraviolet region, there is a photonic band gap which is strongly dependent on the loss and the incident angle for the transverse electric and transverse magnetic waves. Additionally, we find the photonic band gap can be significantly widened in a ternary semiconductor-metal-organic one. The effect of distinct metal on the band gap is also illustrated.     

Properties of the angular gap in a one-dimensional photonic band gap structure containing single negative materials

Properties of the angular gap in a one-dimensional photonic band gap structure containing single negative materials are investigated. This gap forms at oblique incidence due to the total internal reflection into air when the Snell's law breaks down. Its lower edge occurs at the frequency where the refractive index of one or both layers of the structure approaches zero. This gap is found to be highly sensitive to the incident angle and the polarization of the incident light, but is not affected by the thickness ratio of the layers. It is also shown that the electric field gets extremely enhanced at the lower edge of this gap for transverse magnetic polarization. This highly enhanced electric field can be utilized for certain applications.     

Anisotropic magnetic properties and superzone gap formation in CeGe single crystal

Single crystals of CeGe and its non-magnetic analog LaGe have been grown by the Czochralski method. The CeGe compound crystallizes in the orthorhombic FeB-type crystal structure with the space group Pnma (#62). The anisotropic magnetic properties have been investigated for well oriented single crystals by measuring the magnetic susceptibility, electrical resistivity and heat capacity. It has been found that CeGe orders antiferromagnetically at 10.5?K. Both transport and magnetic studies have revealed large anisotropy, reflecting the orthorhombic crystal structure. The magnetization data at 1.8?K reveal metamagnetic transitions along the [010] direction at 4.8 and 6.4?T and along the [100] direction at a critical field of 10.7?T, while the magnetization along the [001] direction increases linearly without any anomaly up to a field of 16?T. From the magnetic susceptibility and the magnetization measurements it has been found that the [010] direction is the easy axis of magnetization. The electrical resistivity along the three crystallographic directions exhibits an upturn at T(N), indicating superzone gap formation below T(N) in this compound. We have performed crystal electric field analysis on the magnetic susceptibility and the heat capacity data and found that the ground state is a doublet, and the energies of splitting from the ground state to the first and second excited doublet states were estimated to be 39 and 111?K, respectively.