共查询到20条相似文献,搜索用时 31 毫秒
2.
3.
G. Franzò V. Vinciguerra F. Priolo 《Applied Physics A: Materials Science & Processing》1999,69(1):3-12
A detailed investigation on the excitation mechanisms of rare-earth (RE) ions introduced in Si nanocrystals (nc) is reported.
Silicon nanocrystals were produced by high-dose 80-keV Si implantation in thermally grown SiO2 followed by 1100 °C annealing for 1 h. Subsequently some of the samples were implanted by 300-keV Er, Yb, Nd, or Tm at doses
in the range 2×1012–3×1015 /cm2. The energy was chosen in such a way to locate the RE ions at the same depth where nanocrystals are. Finally an annealing
at 900 °C for 5 min was performed in order to eliminate the implantation damage. These samples show intense room-temperature
luminescence due to internal 4f shell transitions within the RE ions. For instance, luminescence at 1.54 μm and 0.98 μm is
observed in Er-doped nc, at 0.98 μm in Yb-doped nc, at 0.92 μm in nc and two lines at 0.78 μm and 1.65 μm in Tm-doped nc.
Furthermore, these signals are much more intense than those observed when RE ions are introduced in pure SiO2 in the absence of nanocrystals, demonstrating the important role of nanocrystals in efficiently exciting the REs. It is shown
that the intense nc-related luminescence at around 0.85 μm decreases with increasing RE concentration and the energy is preferentially
transferred from excitons in the nc to the RE ions which, subsequently, emit radiatively. The exact mechanism of energy transfer
has been studied in detail by excitation spectroscopy measurements and time-resolved photoluminescence. On the basis of the
obtained results a plausible phenomenological model for the energy transfer mechanism emerges. The pumping laser generates
excitons within the Si nanocrystals. Excitons confined in the nc can either give their energy to an intrinsic luminescent
center emitting at around 0.85 μm nor pass this energy to the RE 4f shell, thus exciting the ion. The shape of the luminescence
spectra suggests that excited rare-earth ions are not incorporated within the nanocrystals and the energy is transferred at
a distance while they are embedded within SiO2. Rare-earth excitation can quantitatively be described by an effective cross section σeff taking into account all the intermediate steps leading to excitation. We have directly measured σeff for Er in Si nc obtaining a value of ≈2×10−17 cm2. This value is much higher than the cross section for excitation through direct photon absorption (8×10−21 cm2) demonstrating that this process is extremely efficient. Furthermore, the non-radiative decay processes typically limiting
rare-earth luminescence in Si (namely back-transfer and Auger) are demonstrated to be absent in Si nc further improving the
overall efficiency of the process. These data are reported and their implications.
Received: 9 April 1999 / Accepted: 10 April 1999 / Published online: 2 June 1999 相似文献
4.
SnO2 thin films undoped and doped with antimony (Sb), erbium (Er) and Si nanocrystals (Si-nc) have been grown on silicon (Si) substrate using sol-gel method. Room-temperature photoluminescence (PL) measurement of undoped SnO2, under excitation at 280 nm, shows only one broad emission at 395 nm, which is related to oxygen vacancies. The PL of Er3+ ions was found to be enhanced after doping SnO2 with Sb and Si-nc. The excitation process of Er is studied and discussed. The calculation of cross-section suggests a sensitisation of Er PL by Si-nc. 相似文献
5.
W. -X. Ni C. -X. Du K. B. Joelsson G. Pozina G. V. Hansson 《Journal of luminescence》1998,80(1-4):309-314
Various light emitting devices (LED) have been processed using Er/O- and Er/F-doped Si layered structures grown by molecular beam epitaxy (MBE) at low temperature. A comparative study has been carried out in order to provide more understanding of the electroluminescence (EL) excitation and de-excitation mechanisms in particular at a high injection current regime. Comparing the experimental results with model calculations the values of excitation cross section, σex, and effective Auger coefficient, CA, have been determined for various devices operated at different biases. Time-resolved EL measurements of these Er/O- and Er/F-doped MBE Si structures, using an experimental set-up with a time response of 200 ns, have been performed with different excitation conditions. Besides the spontaneous Er emission (700 μs), some fast EL decay processes associated with the Auger energy transfer via free carriers (4 μs), and the hot carrier effects (200 ns) have been identified. 相似文献
6.
D. Pacifici A. Irrera G. Franz M. Miritello F. Iacona F. Priolo 《Physica E: Low-dimensional Systems and Nanostructures》2003,16(3-4):331
In the last decade, a strong effort has been devoted towards the achievement of efficient light emission from silicon. Among the different approaches, rare-earth doping and quantum confinement in Si nanostructures have shown great potentialities. In the present work, the synthesis and properties of low-dimensional silicon structures in SiO2 will be analyzed. All of these structures present a strong room temperature optical emission, tunable in the visible by changing the crystal size. Moreover, Si nanocrystals (nc) embedded in SiO2 together with Er ions show a strong coupling with the rare earth. Indeed each Si nc absorbs energy which is then preferentially transferred to the nearby Er ions. The signature of this interaction is the strong increase of the excitation cross section for an Er ion in the presence of Si nc with respect to a pure oxide host. We will show the properties of Er-doped Si nc embedded within Si/SiO2 Fabry–Pérot microcavities. Very narrow, intense and highly directional luminescence peaks can be obtained. Moreover, the electroluminescence (EL) properties of Si nc and Er-doped Si nc in MOS devices are investigated. It is shown that an efficient carrier injection at low voltages and quite intense room temperature EL signals can be achieved, due to the sensitizing action of Si nc for the rare earth. These data will be presented and the impact on future applications discussed. 相似文献
7.
L. Liu K.L. Teo Z. X. Shen 《光散射学报》2005,17(3):202-204
pacc:7830,8100 WereportthepressuredependenceofGe nanocrystalsembeddedinSiO2filmmatrixonSi substrateusingRamanscatteringandfiniteele mentanalysis.DelaminationofSiO2filmfromthe Sisubstrateoccursat~23kbarduetothelarge differencebetweenthecompressibilityoft… 相似文献
8.
Erbium doping of silicon has recently emerged as a promising method to tailor the optical properties of Si towards the achievement of a light emission at 1.54 μm. In this paper we will review our recent work on this subject. In particular a detailed investigation of the non-radiative processes, competing with the radiative emission of Er in Si will be presented. Among these processes, an Auger de-excitation with the energy released to free carriers will be demonstrated to be extremely efficient, with an Auger coefficient CA4.4×10−13 cm3/s. Moreover, at temperatures above 100 K a phonon-assisted back-transfer decay process, characterized by an activation energy of 0.15 eV is seen to set in. This understanding of the physical properties competing with the radiative light emission allowed us to control them and obtain efficient room temperature luminescence. Two examples will be reported. It will be shown that by exciting Er within the depletion region of reverse biased p+–n+ Si diodes in the breakdown regime it is possible to avoid Auger quenching and to achieve high efficiency. Moreover, at the switch off of the diode, when the depletion region shrinks, the excited Er ions become suddenly embedded within the neutral heavily doped region of the device. In this region Auger de-excitation with free carriers sets in and quenches rapidly the luminescence. This allows to modulate the light signal at frequencies as high as a few MHz. Furthermore, the introduction of Er within Si nanocrystals is demonstrated to be a promising way to eliminate back-transfer processes by a widening of the bandgap while maintaining the full advantage of the efficient electron-hole mediated excitation present in Si. These data are presented and future perspective discussed. 相似文献
9.
利用金属蒸气真空弧(MEVVA)离子源将稀土元素Er离子掺杂到富硅热氧化SiO2/Si薄膜中.卢瑟福背散射(RBS)和X-射线电子能谱仪(XPS)分析表明,Er浓度可达原子百分数(x)~10,即Er的原子体浓度为~1021· 相似文献
10.
Spherical growth and surface-quasifree vibrations of Si nanocrystallites in Er-doped Si nanostructures 总被引:1,自引:0,他引:1
Wu XL Mei YF Siu GG Wong KL Moulding K Stokes MJ Fu CL Bao XM 《Physical review letters》2001,86(14):3000-3003
Si-based Er-doped Si nanostructures were fabricated for exploring efficient light emission from Er ions and Si nanocrystallites. High-resolution transmission electron microscopy observations reveal that Si nanocrystallites are spherically embedded in the SiO2 matrix. Energy-dispersive x-ray analysis indicates that the Er centers are distributed at the surfaces of nanocrystallites surrounded by the SiO2 matrix. Low-frequency Raman scattering investigation shows that Lamb's theory can be adopted to exactly calculate the surface vibration frequencies from acoustic phonons confined in spherical Si nanocrystallites and the matrix effects are negligible. 相似文献
11.
Er(3+)-ion-doped anatase TiO(2) nanocrystals were prepared by simple wet chemical synthesis. Very sharp and intense near-infrared luminescence at approximately 1.53 microm was observed that originated from the lattice site of Er(3+) ions incorporated in TiO(2) nanocrystals. Based on the high-resolution emission and excitation spectra at 10 K, an efficient energy transfer from the TiO(2) host to Er(3+) ions was verified. The luminescence decay for the I13/24-->I15/24 transition at 1.53 microm showed nonexponential characteristics, indicating a nonradiative relaxation to the defects in the nanocrystals, and the intrinsic lifetime of the I13/24 state was determined to be 1.56 ms. 相似文献
12.
M. Losurdo M. F. Cerqueira E. Alves M. V. Stepikhova M. M. Giangregorio G. Bruno 《Physica E: Low-dimensional Systems and Nanostructures》2003,16(3-4):414
Nanocrystalline silicon thin films codoped with erbium, oxygen and hydrogen have been deposited by co-sputtering of Er and Si. Films with different crystallinity, crystallite size and oxygen content have been obtained in order to investigate the effect of the microstructure on the photoluminescence properties. The correlation between the optical properties and microstructural parameters of the films is investigated by spectroscopic ellipsometry. PL response of the discussed structures covers both the visible wavelength range (a crystallite size-dependent photoluminescence detected for 5–6 nm sized nanocrystals embedded in a SiO matrix) and near IR range at 1.54 μm (Er-related PL dominating in the films with 1–3 nm sized Si nanocrystals embedded in a-Si:H). It is demonstrated that the different PL properties can be also discriminated on the basis of ellipsometric spectra. 相似文献
13.
We conclusively establish a direct link between formation of an Er-related donor gap state and the 1.5 microm emission of Er in Si. The experiment is performed on Si/Si:Er nanolayers where a single type of Er optical center dominates. We show that the Er emission can be resonantly induced by direct pumping into the bound exciton state of the identified donor. Using two-color spectroscopy with a free-electron laser we determine the ionization energy of the donor-state-enabling Er excitation as E(D) approximately 218 meV. We demonstrate quenching of the Er-related emission upon ionization of the donor. 相似文献
14.
Pseudomorphic three-dimensional Ge nanocrystals (quantum dots) grown on thin silicon-on-insulator substrates can induce significant bending of the silicon template layer that is local on the nanometer scale. We use molecular dynamics simulations and analytical models to confirm the local bending of the Si template and to show that its magnitude approaches the maximum value for a freestanding membrane. The requisite greatly enhanced viscous flow of SiO2 underneath the Si layer is consistent with the dependence of the viscosity of SiO2 on shear stress. 相似文献
15.
A. Chouket B. Gelloz H. Koyama H. Elhouichet M. Oueslati N. Koshida 《Journal of luminescence》2009,129(11):1332-1335
We have studied the effect of high-pressure water-vapor annealing (HWA) on the excitation energy transfer from Si nanocrystals to dye molecules in porous Si layers. Efficient photoluminescence, originating from both RhB molecules and Si nanocrystals, was observed. The behavior of the polarization memory of the photoluminescence showed the presence of energy transfer from the surface-passivated Si nanocrystals to RhB molecules. The fact that HWA, which is an effective method to stabilize and enhance the emission from Si nanocrystals in porous Si, does not suppress the energy transfer is an important result since it makes possible the realization of stable Si/dye-nanocomposite functional devices. 相似文献
16.
K. Imakita M. Fujii S. Hayashi 《The European Physical Journal D - Atomic, Molecular, Optical and Plasma Physics》2005,34(1-3):161-163
The mechanism of energy transfer from silicon nanocrystals (Si-nc’s) to erbium
(Er) ions is studied by analyzing time transient of Er photoluminescence
at 1.54 μm.
It is shown that two different energy transfer mechanisms, i.e., fast
and slow, exist in SiO2 films containing Si-nc’s and Er ions, and that the ratio of slow to fast processes depends on
size of Si-nc’s and Er concentration.
A quantitative analysis reveals that Er ions located within about 1.5 nm from the surface of Si-nc’s are excited by
the fast process, and those located within about 2.5 nm by the slow process if no Er ions exist within 1.5 nm from the surface.
Er ions staying outside these regions cannot be sensitized by Si-nc’s. 相似文献
17.
A. Irrera G. Franz F. Iacona A. Canino G. Di Stefano D. Sanfilippo A. Piana P.G. Fallica F. Priolo 《Physica E: Low-dimensional Systems and Nanostructures》2007,38(1-2):181
In this paper, we summarize the results of an extensive investigation on the properties of MOS-type light emitting devices based on silicon nanostructures. The performances of crystalline, amorphous and Er-doped Si nanostructures are presented and compared. We show that all devices are extremely stable and robust, resulting in an intense room temperature electroluminescence (EL) at around 900 nm or at 1.54 μm. Amorphous nanostructures may constitute an interesting system for the monolithic integration of optical and electrical functions in Si ULSI technology. In fact, they exhibit an intense room temperature EL with the advantage to be formed at a temperature of only 900 °C, remarkably lower than the temperature needed for the formation of Si nanocrystals (1100 °C or higher). To improve the extraction of the light, we coupled the emitting system with a 2D photonic crystal structure properly fabricated with ULSI technology to reduce the total internal reflection of the emitted light. We demonstrate that the extraction efficiency is increased by a factor of 4. Finally, the light emission from devices based on Er-doped Si nanoclusters has been studied and in particular we have investigated the luminescence quenching processes limiting quantum efficiency in these devices. In fact the carrier injection, that determines the excitation of Er ions through electron–hole recombination, at the same time produces an efficient non-radiative Auger de-excitation with trapped carriers. These data are presented and the implications on the device performances discussed. 相似文献
18.
Miraj Shah Maciej Wojdak Anthony J. Kenyon Matthew P. Halsall Hang Li Iain F. Crowe 《Journal of luminescence》2012,132(12):3103-3112
Erbium doped silicon-rich silica offers broad band and very efficient excitation of erbium photoluminescence (PL) due to a sensitization effect attributed to silicon nanocrystals (Si-nc), which grow during thermal treatment. PL decay lifetime measurements of sensitised Er3+ ions are usually reported to be stretched or multi exponential, very different to those that are directly excited, which usually show a single exponential decay component.In this paper, we report on SiO2 thin films doped with Si-nc's and erbium. Time resolved PL measurements reveal two distinct 1.54 μm Er decay components; a fast microsecond component, and a relatively long lifetime component (10 ms). We also study the structural properties of these samples through TEM measurements, and reveal the formation of Er clusters. We propose that these Er clusters are responsible for the fast μs decay component, and we develop rate equation models that reproduce the experimental transient observations, and can explain some of the reported transient behaviour in previously published literature. 相似文献
19.
Relative enhancement of photoluminescence intensity of passivated silicon nanocrystals in a silicon dioxide matrix
下载免费PDF全文
![点击此处可从《中国物理 B》网站下载免费的PDF全文](/ch/ext_images/free.gif)
Photoluminescence (PL) intensity of passivated silicon nanocrystals (Si NCs) embedded in a SiO 2 matrix is compared with that of unpassivated Si NCs. We investigate the relative enhancement of PL intensity (I R ) as a function of annealing temperature and implanted Si ion dose. The I R increases simultaneously with the annealing temperature. This demonstrates an increase in the number of dangling bonds (DBs) with the degree of Si crystallization varying via the annealing temperature. The increase in I R with implanted Si ion dose is also observed. We believe that the near-field interaction between DBs and neighboring Si NCs is an additional factor that reduces the PL efficiency of unpassivated Si NCs. 相似文献
20.
Both photo-oxidation and photosynthesis manifest a strong interaction between nanoparticles and photons due to the large surface area-to-volume ratio. The final sizes of the semiconductor nanocrystals are determined by the photon energy during these phenomena. The photosynthesis is demonstrated in a Si-rich oxide and is similar to thermal synthesis, which involves the decomposition of SiOx into Si and SiO2, that is well known and often employed to form Si or Ge nanocrystals embedded in SiO2 by annealing SiOx at high temperature. However, photosynthesis is much faster, and allows the low-temperature growth of Si nanocrystals and is found to be pronounced in the SiO nanopowder, which is made by thermal CVD using SiH4 and O2. The minimum laser power required for the photosynthesis in the SiO nanopowder is much lower than in the Si-rich oxide formed by the co-sputtering of Si and SiO2. This is attributed to the weak bond strength of Si-Si and Si-O in the SiO nanopowder. Photosynthesis, which can control the size and position of Si nanocrystals, is a novel nanofabrication technique making the best use of the strong interaction between photons and nanoparticles. 相似文献