NEXAFS study of 1-butanethiol adsorbed on Cu(111) and square root of 7 x square root of 7 R19.1 degrees S/Cu(111)

The adsorption of 1-butanethiol on Cu(111) and square root of 7 x square root of 7 R19.1 degrees S/Cu(111) surfaces has been studied by S K-edge near edge X-ray absorption fine structure (NEXAFS) spectroscopy and thermal desorption spectroscopy. Upon adsorption on clean Cu(111) surface at room temperature, butanethiolate as well as atomic sulfur is formed. For the butanethiolate, the S-C bond is found predominately perpendicular to the surface as revealed by polarization analysis. In contrast, on square root of 7 x square root of 7 R19.1 degrees S/Cu(111) surface, the S-H and S-C bonds of the butanethiol stay intact, resulting in a weakly chemisorbed butanethiol.     

Insulating ground state of Sn/Si(111)-(square root 3 x square root 3)R30 degrees

The Sn/Si(111)-(square root 3 x square root 3)R30 degrees surface was so far believed to be metallic according to the electron counting argument. We show, by using tunneling spectroscopy, scanning tunneling microscopy, photoemission, and photoelectron diffraction, that below 70 K this surface has a very low density of states at the Fermi level and is not appreciably distorted. The experimental results are compatible with the insulating Mott-Hubbard ground state predicted by LSDA+U calculations [G. Profeta and E. Tosatti, Phys. Rev. Lett. 98, 086401 (2007)].     

Intrinsic character of the (3 x 3) to (square root 3 x square root 3) phase transition in Pb/Si(111)

We have investigated the (3 x 3) to (square root 3 x square root 3) reversible phase transition in Pb/Si(111) by means of variable temperature scanning tunneling microscopy and density functional first-principles calculations. By tracking exactly the same regions of the surface with atomic resolution in a temperature range between 40 and 200 K, we have observed the phase transition in real time. The ability to prepare and track exceptionally large domains without defects has allowed us to detect the intrinsic character of the phase transition at temperatures around 86 K. This intrinsic character is in full agreement with our first-principles calculations. Moreover, our results show that the hypothesis that point defects play a fundamental role as the driving force, reported for similar systems, can be discarded for Pb/Si(111).     

Indium square root 7 x square root 3 on Si(111): a nearly free electron metal in two dimensions

We present measurements of the Fermi surface and underlying band structure of a single layer of indium on Si(111) with square root 7 x square root 3 periodicity. Electrons from both indium valence electrons and silicon dangling bonds contribute to a nearly free, two-dimensional metal on a pseudo-4-fold lattice, which is almost completely decoupled at the Fermi level from the underlying hexagonal silicon lattice. The mean free path inferred from our data is quite long, suggesting the system might be a suitable model for studying the ground state of two-dimensional metals.     

Direct observation of long-range assisted formation of Ag clusters on Si(111)7 x 7

Formation of Ag clusters on reconstructed surface Si(111)7 x 7 was for the first time observed in real time during deposition by means of scanning tunneling microscopy. The sequences of images taken at room temperature show mechanisms controlling the growth and behavior of individual Ag adatoms. Obtained data reveal new details of attractive interaction between adsorbates occupying adjacent half-unit cells of the 7 x 7 reconstruction. Time evolution of growth characteristics was simulated by means of a simple model. The growth scenario observed in vivo is discussed with respect to previously reported models based on data obtained after finishing the deposition--post-mortem.     

Surface structure of SrTiO3(100)-(square root of 5 x square root of 5) - R26.6 degrees

Atomic and electronic structures of the SrTiO3(100)-(square root of 5 x square root of 5) - R26.6 degrees surface are studied by using scanning tunneling microscopy (STM) and noncontact atomic force microscopy (NC-AFM). Instead of the well established oxygen vacancy model, it is found that a structural model, consisting of an ordered Sr adatom at the oxygen fourfold site of a TiO2 terminated layer, can explain the experimental results very well. We theoretically simulate the model cluster with the first-principles total-energy calculation. Calculated density of states and images for STM and NC-AFM are in good agreement with the experimental results.     

Surface soft phonon and the sqrt[3] x sqrt[3] <--> 3x3 phase transition in Sn/Ge(111) and Sn/Si(111)

Density functional theory calculations show that the reversible Sn/Ge(111) sqrt[3]xsqrt[3]<-->3x3 phase transition can be described in terms of a surface soft phonon. The isovalent Sn/Si(111) case does not display this transition since the sqrt[3]xsqrt[3] phase is the stable structure at low temperature, although it presents a partial softening of the 3x3 surface phonon. The rather flat energy surfaces for the atomic motion associated with this phonon mode in both cases explain the experimental similarities found at room temperature between these systems. The driving force underlying the sqrt[3]xsqrt[3]<-->3x3 phase transition is shown to be associated with the electronic energy gain due to the Sn dangling bond rehybridization.     

STM images apparently corresponding to a stable structure: considerable fluctuation of a phase boundary of the Si(111)-(square root of (3) x square root of (3))-Ag surface

We study scanning tunneling microscopy (STM) images near a phase boundary of the Si(111)- (square root of (3) x square root of (3))-Ag surface by using Monte Carlo simulations based on results of first-principles calculations. The boundary is found to fluctuate from snapshot to snapshot, and the feature of the simulated STM images differs distinctly from the observed one with a straightly extending honeycomb pattern of bright spots. Remarkably, statistical averages of the simulated images reproduce the observed feature. This study gives a warning of our tendency to relate STM images revealing clear arrangement of bright spots with some stable structure.     

Two-speed phase dynamics in the si(111) (7 x7)-(1 x 1) phase transition

We propose a natural two-speed model for the phase dynamics of Si(111) 7 x 7 phase transition to high-temperature unreconstructed phase. We formulate the phase dynamics by using phase-field method and adaptive mesh refinement. Our simulated results show that a 7 x 7 island decays with its shape kept unchanged, and its area decay rate is shown to be a constant increasing with its initial area. Low-energy electron microscopy experiments concerned are explained, which confirms that the dimer chains and corner holes are broken first in the transition, and then the stacking fault is remedied slowly. This phase-field method is a reliable approach to phase dynamics of surface phase transitions.     

Vibrational characterization of the oxidation products on Si(111)-(7 x 7)

The oxidation products on Si(111)-(7x7) are investigated at 82 K by means of high-resolution electron energy loss spectroscopy. The isotope-labeled vibrational spectra with 16O2, 18O2, and 16O 18O show that, in the initial stage of the oxidation, an O2 molecule dissociates to form a metastable product with an O atom bonding on top of the Si adatom and the other inserted into the backbond. The metastable product is observed as a dark site in the topographic scanning tunneling microscopy (STM) image and can be transformed to a stable product by the STM manipulation. Our results are in good agreement with recent theoretical calculations.