MOVPE 生长GaN薄膜的 光致黄带发光与激发光源的相关性

用四种不同光源作为激发光源,研究了蓝宝石衬底金属有机物汽相外延方法生长的氮化镓薄膜的光致发光特性。结果发现用连续光作为激发光源时,光致发光谱中除出现365 nm的带边发射峰外,同时观察到中心波长位于约550 nm 的较宽黄带发光;而用脉冲光作为激发光源时其发光光谱主要是365 nm附近的带边发光峰,未观察到黄带发光。氮化镓薄膜的光致发光特性依赖于所用的激发光源性质。     

Luminescence in high purity In0.53Ga0.47As

We have investigated luminescence processes in high purity In_0.53Ga_0.47As grown by liquid phase epitaxy on InP substrate. The origins of luminescence processes have been determined by studying the dependence of emission intensity and spectrum on temperature. We show that exciton-ionized donor complex dominates the luminescence at 2K. With increasing temperature, the luminescence spectrum is dominated by donor-valence band and free electron-free hole recombination. Spectrum and bandgap energy are found to be dependent on the excitation position.     

Photoluminesence of Iodine‐Doped Crystals of ZnSe

The luminescence spectra and the luminescenceexcitation spectra of ZnSe crystals grown by the Piper–Polish method have been investigated in the temperature interval 81–300 K. An intense edge emission assigned to the presence of iodine has been detected. The analysis of the longwave photoluminescence band by the Alentsev–Fok method has revealed a yellow luminescence band which is attributed to the associative emission centers involving I _Se.     

Growth and spectral-luminescent study of SrMoO<Subscript>4</Subscript> crystals doped with Tm<Superscript>3+</Superscript> ions

SrMoO₄ crystals doped with Tm³⁺ ions have been produced from a melt using the Czochralski method; their spectral-luminescent characteristics have been studied, and laser radiation has been generated at the wavelength of 1.94 μm using laser-diode excitation. The high absorption section at the wavelength of 795 nm, the fairly high luminescence section, the long lifetime at the upper laser level ³F4 of 1.5 ms, and a wide luminescence band allow one to hope for developing efficient tunable Tm³⁺: SrMoO₄ crystal lasers with diode pumping in the range of 1.7–2.0 μm, which are capable of implementing SRS self-transformation of radiation into the middle IR band.     

New high-energy luminescence bands from Co2+ in ZnSe

Three sharp absorption features in the energy range 2.36–2.55 eV have been detected in the transmission spectrum of Co-diffused ZnSe, and a number of luminescence transitions originating from the lowest of these states at 2.361 eV have been observed. Photoluminescence excitation spectra prove that these are high energy excited states of the Co²⁺_Zn impurity, a conclusion confirmed by comparison of measured and predicted luminescence energies. This represents the first identification of luminescence branching from a higher excited state of a transition metal ion in any semiconductor. The sharp, weakly phonon-coupled transitions involve either intra-impurity excitation or transitions from the impurity to localised states split off from a minimum in the conduction band. The implications of these observations for the mechanism of host-impurity energy transfer and for the nature of the excited state wavefunctions are discussed.     

Water as a proton donor in excited state reactions of 6, 6′-biquinoline

6, 6′-biquinoline (BQ) in aqueous-alcoholic solutions exhibits doubleluminescence and two ESR signals in the triplet state. The structureless fluorescence band observed at room temperature was shown to be the result of the protonation of strongly basic¹ (BQ)^* (pK^* = 13). At low temperature the aggregation of the molecule has been observed. The low temperature absorption, luminescence, luminescence excitation spectra, and triplet ESR spectra of the aggregates have been measured and distinguished from the corresponding spectra of monomeric BQ.     

Evidence for exciton binding at Ni impurity sites in ZnSe

A broad charge transfer band is observed in the photoluminescence excitation (PLE) spectrum of the 2.5 μ Ni²⁺ luminescence in ZnSe : Ni. This band lies above the highest energy d-d excitation bands and exhibits a ZPL at 1.8163 eV and LO(#38;0lambda;) phonon replicas at higher energy. In contrast, PLE spectra of Co²⁺ luminescence in ZnSe:Co contain only d-d excitation bands. The charge transfer band in ZnSe:Ni is interpreted as evidence for bound exciton formation at the Ni site. The recombination energy of this exciton is transferred efficiently to the excited d-band states of the Ni ion, leading to characteristic Ni²⁺d-d luminescence.     

Properties of vanadium in InP

Experiments are performed on InP/V single crystals extracted from a polycristalline ingot grown in a two zones gradient freeze furnace; in photoluminescence (PL) we observe a band with two zero phonon lines at 5692.5 cm^-1 and 5705.5 cm^-1. Photoluminescence excitation (P.L.E.) spectra have also been observed. This type of luminescence spectra has already been observed in V doped GaAs and GaP and attributed to an internal transition of V²⁺ (3 d³). D.L.T.S. and O.D.L.T.S. experiments do not reveal any deep level in the forbidden band gap. These two results seem to indicate a puzzling behaviour of V in InP as in GaAs which is discussed in the framework of a model proposed for GaAs/V : the V²⁺ ground state has a large relaxation energy and so, the excited states giving rise to the P.L. and P.L.E. spectra are not resonant with the conduction band.     

Luminescence and relaxed excited state origin in CsI:Pb crystals

Emission and excitation spectra, luminescence polarization and decay kinetics have been studied for CsI:Pb crystals in the 0.36-300 K temperature range. The origin of the excited states responsible for the optical characteristics has been discussed. It has been concluded that the doublet ≈3.70 eV absorption (excitation) band is caused by the electronic transitions into the Pb²⁺ triplet state split due to the presence of a cation vacancy near a Pb²⁺ ion, while the higher-energy bands are of the charge-transfer origin. Like in CsI:Tl, four emission bands of CsI:Pb have been found to belong to the main luminescence centres. Two emission bands, peaking at 3.1 and 2.6 eV, are suggested to arise from the triplet relaxed excited state of a Pb²⁺ ion. Two visible emission bands, peaking at 2.58 and 2.23 eV, are interpreted as the luminescence of an exciton localized near the Pb²⁺ ion.     

Luminescence spectra of lead-doped NaCl,KCl and KBr

The luminescence spectra of lead-doped NaCl, KCl and KBr have been systematically investigated. Special attention has been paid to the effects of concentration and thermal history of the crystals. In the three systems, the emission spectra for A and C band excitation consists mainly of two well-defined emission bands whose energy separation is ～0.7 eV. It has been concluded that none of the bands can be attributed to a single type of lead center but are both typical of Pb²⁺ luminescence. In fact, their behavior can be correlated with that found for most monovalent ions and interpreted in a similar way. The excitation spectra for the two emissions have shown that the A-band is complex. One of the components appearing in very low doped and quenched samples is ascribed to dipoles, whereas additional side bands are attributed to complexes or small aggregates involving Pb²⁺ ions.     

Model for the blue photoluminescence of cadmium sulfide

A model for the blue luminescence of polycrystalline cadmium sulfide and cadmium sulfide single crystals is proposed on the basis of a joint study of the absorption, reflection, emission, and excitation spectra of this luminescence at 77 °K. The blue luminescence arises in the transition of an electron from the conduction band to the 5s^{2 1}S₀ ground level of a super-stoichiometric cadmium atom which has trapped a hole from the valence band. The width of the energy gap (2.614 eV) at κ = 0 is estimated on the basis of the oscillatory nature of the excitation spectrum for the blue luminescence, and the effective mass of heavy holes is estimated.     

Fast luminescence processes in KI : In caused by excitation in the a absorption band

The temperature dependence of the decay time (τ) of the luminescence pulses from the 440 nm emission band as well as the rise time (τ_R) of luminescence pulses from the 575 nm emission band has been investigated for KI : In by pulsed light excitation in the A absorption band. From the agreement of τ and τ_R independent of the temperature it can be concluded that the X minimum on the ³T₁₄ adiabatic potential energy surface (APES) is mainly populated by a radiationless transition from the tetragonal T minimum of the same APES.Furthermore, a comparison of parameters for the impurity centre luminescence corresponding to the tetragonal emission band in KI : In and KI : Tl has been drawn.     

Time-Resolved Vacuum Ultraviolet Spectroscopy of Er<Superscript>3+</Superscript> Ions in the SrF<Subscript>2</Subscript> Crystal

The photoluminescence and photoexcitation spectra as well as the luminescence decay kinetics of Er³⁺ ions in the visible ultraviolet and vacuum ultraviolet (VUV) regions have been studied by the method of low-temperature, time-resolved VUV-spectroscopy on excitation by synchrotron radiation. In the VUV spectral region of the luminescence of SrF₂:1% Er³⁺, the 146.5-nm band with a time of decay of less than 0.6 nsec was revealed together with the well-known emission band at 164.3 nm (decay constant in the microsecond range). Its possible nature is discussed. The specific features of the formation of photoexcitation spectra of the f-f and f-d transitions in the Er³⁺ ion are considered. Competition between the processes of excitation of f-f and d-f luminescence has been revealed. It manifests itself in the inverse relationship of their photoexcitation spectra in a range of energies of incident photons that are close to the position of the 4fⁿ⁻¹5d configuration levels. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 4, pp. 519–523, July–August, 2005.     

Luminescence spectroscopy of Er-doped and Er, Yb-codoped LaPO4 single crystals

LaPO₄ single crystals lightly doped with Er³⁺, and codoped with Er³⁺ and Yb³⁺ have been grown by spontaneous nucleation in a lead phosphate flux. Absorption and luminescence spectra have been measured in the visible and near-IR regions and the excited state dynamics has been studied upon pulsed laser excitation. The obtained results have allowed the evaluation of the effective emission cross-sections around 1.5 μm, that have been found to be similar to important oxide laser crystals doped with Er³⁺. Efficient visible upconversion has been observed upon excitation at 980 nm in the codoped crystals. This behaviour is attributed to Yb³⁺-Er³⁺ energy transfer processes.     

The effect of ligand field on the excitation luminescence spectra of some complex compounds of manganese (II)

The excitation and emission luminescence spectra of the complex compounds of manganese (II) chloride with the hydrochlorides of pyridine, 2-methyl- and 2-ethylpiperidine have been studied. It has been established that the crystals of these complex compounds appear in tetrahedral and octahedral configurations. The excitation spectra in both configurations contain bands originating from the⁴G,⁴P,⁴D and⁴F terms, the position of which is determined by configuration. From the excitation spectra the Racah parametersB andC and the ligand field strength parameter 10Dq have been determined.The emission luminescence spectra also depend on configuration of the complex compound. The character of these spectra is expressed in terms of the following characteristic parameters: the position of the maximum of the functionG(v), the half-width of the emission luminescence band, and the constants andm. From the excitation and emission luminescence spectra it has been established that the emission in both configurations is due to the⁴T₁(G)⁶A₁ transition.     

Structural and optical properties of Au-implanted ZnO films

The structural and luminescence related optical behaviours of Au ion implanted ZnO films grown by magnetic sputtering and their post implantation annealing behaviours in the temperature range of 100-700 °C have been investigated. Optical absorption and transmittance spectra of the films indicate that band edge of Au-implanted ZnO has shifted to high energy range and optical band gap has increased, because the sharp difference of thermal expansion induces the lattice mismatch between ZnO and SiO₂. PL spectra reveal that UV and visible luminescence bands of ZnO films can be improved after thermal annealing due to recovery of defects and Au ions incorporation. Importantly, green luminescence band of 530 nm has been only observed in the Au-implanted and subsequently annealed ZnO films and it enhances with the increasing annealing temperature, which can be related to Au atoms or clusters in ZnO films. Furthermore, X-ray photoelectron spectroscopy measurements reveal that the Au⁰ is dominant state in Au implanted and annealed ZnO films. Possible mechanisms, such as optical transitions of Au atoms or clusters and deep level luminescence of ZnO, have been proposed for green emission.     

在Si衬底上异质外延GaAs薄膜变激发强度的近红外光致发光

通过对用ＭＯＣＶＤ（金属有机物化学气相沉积）方法在Ｓｉ衬底上生长的ＧａＡｓ外延薄膜，用不同激发强度下的近红外光致发光研究了液氮温度下峰值能量为１．１３ｅＶ和１．０４ｅＶ两个带谱的发光特性，表明这两个带均属于施主－受主对复合发光。由于发光带中存在着电子－声子耦合，所以应在施主－受主对复合发光能量表示式中计及Ｆｒａｎｋ－Ｃｏｎｄｏｎ位移，从而对复合发光能量表示式进行修正。通过对复合发光带能量随激发强度变化的实验曲线和理论表达式的拟合，确定了峰值为１．１３ｅＶ与１．０４ｅＶ这两个发光带深施主－受主对的束缚能之和分别为０．３００ｅＶ和０．４０１ｅＶ。     

Photoluminescence of Mn doped epitaxial GaAs

We have measured the near band edge photoluminescence of Mn doped liquid phase epitaxially grown GaAs. The photoluminescence spectra at 2°K shows, at low excitation intensities, a structure of up to eight sharp peaks (widths .2 to 1.0 meV) between 1.517 and 1.512 eV, besides the lower energy bands near 1.41 eV due to the deep Mn acceptor level and the usual donor-acceptor bands around 1.47 eV. Attempts to relate the sharp lines to the Mn electronic states, introduced by doping, were unsuccessful. It is our belief that the presence of this particular impurity in our samples allows for whatever states are responsible for the sharp line structure, to reveal themselves in the emission spectrum. A most unespected result is that near band edge sharp line luminescence is observed for impurity concentration as high as 10¹⁸cm^-3.     

Excitation spectroscopy in GaP-rich GaxIn1-xP alloys doped with nitrogen

Luminescence excitation spectra have been measured together with photo-luminescence spectra on epitaxial layers of nitrogen doped Ga_xIn_1-xP alloys (x 0.90). We give more detailed informations on the dominant luminescence band A₀ which is related to the close presence of indium in the local nitrogen environment. The excitation band A is broadened and slightly shifted to higher energy as the In concentration increases. The dependences of the luminescence and excitation spectra with different temperatures and various nitrogen doping levels confirm our hypothesis concerning the importance of transfer mechanisms in the broadened excitation band A. An interpretation of the spectra features in terms of local and average disorder around N atoms is proposed.     

Ultraviolet excitation of rare-earth-doped YSZ crystals

Abstract

The optical properties of nominally pure and Er³⁺- or Pr³⁺ -doped yttria-stabilized zirconia single crystals were investigated under UV light excitation. In the excitation spectra of both types of doped crystals, a broad UV band is observed. Under excitation with light of different wavelengths inside this band, the luminescence features of the doped crystals are different. YSZ: Pr³⁺ samples exhibit the characteristic 4f → 4f emission of the Pr³⁺ ions. In YSZ: Er³⁺ crystals, both the Er³⁺ ion and the intrinsic luminescence are observed. Host to Er³⁺ ion radiative energy-transfer is also demonstrated. No dependence of the transfer process with the excitation wavelength was found. These results suggest that the UV band in Er³⁺ -doped crystals is associated with the lattice-dopant ion interaction rather than with the 4f5d interconfigurational band of the Er^3? ions.