共查询到18条相似文献,搜索用时 46 毫秒
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<正> 浅结制备是超大规模集成电路发展的关键技术之一。硅中硼、磷等杂质注入,在退火时发生异常扩散,使浅结的控制困难。异常扩散是一个瞬态快速扩散过程。对于硼,在退火开始时,杂质分布尾部推移极快,随之减慢,恢复正常扩散。这一过程用衰变时间表征。 相似文献
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本文应用二次离子质谱(SIMS),微分霍尔效应和透射电镜(TEM)研究了硅中高温注入砷离子的扩散和激活行为.将180KeV,1×1015cm-2砷离子在500℃至1000℃的温度范围内注入硅.研究结果表明:在500℃至850℃注入时所发生的异常扩散和载流子浓度及迁移率深度分布与剩余缺陷的分布密切相关;而且随着注入温度的增高,砷的增强扩散亦增强,同时所形成的剩余缺陷减少.在注入温度高于850℃时,随着注入温度的增高,砷的增强扩散效应减弱.在500℃至1000℃的注入温度,与热扩散相比,砷的增强扩散效应显著; 相似文献
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对硼扩散片弯曲度的控制技术进行了研究。结果发现单面扩散后硅片的弯曲度比双面扩散的弯曲度大,晶锭加工之前的热处理工艺有助于弯曲度的改善。在单面减薄后对硅片进行碱处理工艺,进一步改善了扩散片的弯曲度。通过对硅单晶进行热处理、以及对硅扩散片进行碱处理等一系列措施,使扩散片的弯曲度有了较大幅度的改善。 相似文献
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硼铝乳胶源扩散的质量控制途径 总被引:1,自引:0,他引:1
乳胶源扩散是近年来得到应用的新工艺,它具有扩散参数均匀的特点,其应用不断推广。本文对影响硼铝乳胶源扩散质量的各种因素进行了试验,在此基础上探讨质量控制的方法。 相似文献
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本文报告了P_(31)~+离子注入Si中快速退火的电特性研究结果。采用高精度四探针测量了P_(31)~+注入层在不同注入剂量下,薄层电阻与退火温度和退火时间的关系。采用自动电化学测量仪PN-4200,测量了P_(31)~+离子注入Si中的载流子剖面分布。 相似文献
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观察了硼和磷离子注入 Si 中的载流子浓度剖面分布和异常增强扩散。将不同注入能量、不同剂量、常规退火和快速退火得到的结果进行了此较。结果表明:(1)对剂量小于或等于10~(14)cm~(-2)的硼离子注入,没观察到异常的载流子剖面分布。随着剂量的增加,将出现异常增强扩散尾;(2)不管退火方法如何,在磷离子注入中观察到了异常的载流子剖面分布和增强扩散尾。 相似文献
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A.T. Fiory A. Stevenson A. Agarwal N.M. Ravindra 《Journal of Electronic Materials》2007,36(12):1735-1747
Dopant impurities were implanted at high dose and low energy (1015 cm−2, 0.5–2.2 keV) into double-side polished 200 mm diameter silicon wafers and electrically activated to form p–n junctions by
10 s anneals at temperatures of 1,025, 1,050, and 1,075°C by optical heating with tungsten incandescent lamps. Activation
was studied for P, As, B, and BF2 species implanted on one wafer side and for P and BF2 implanted on both sides of the wafer. Measurements included electrical sheet resistance (Rs) and oxide film thickness. A
heavily boron-doped wafer, which is optically opaque, was used as a hot shield to prevent direct exposure to lamp radiation
on the adjacent side of the test wafer. Two wafers with opposing orientations with respect to the shield wafer were annealed
for comparison of exposure to, or shielding from, direct lamp illumination. Differences in sheet resistance for the two wafer
orientations ranged from 4% to 60%. n-Type dopants implanted in p-type wafers yielded higher Rs when the implanted surface was exposed to the lamps, as though the effective temperature had
been reduced. p-Type dopants implanted in n-type wafers yielded lower Rs when the implanted surface was exposed to the lamps, as though the effective temperature had
been increased. Effective temperature differences larger than 5°C, which were observed for the P, B, and BF2 implants, exceeded experimental uncertainty in temperature control. 相似文献
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采用静电计测量了BF ̄+2、F ̄+B ̄+和Ar ̄++B ̄+注入硅RTA二极管的反向漏电流;借助高压透射电镜观察了BF ̄+2、F ̄++B“和Ar ̄++B ̄+注入硅RTA剩余损伤;深入讨论了剩余损伤对二极管反向漏电流的影响。结果表明,1)BF ̄+2注入二极管的反向漏电流最小,2)注入层剩余损伤和RTA期间导致的热应力可能是影响二极管反向漏电流的主要原因。 相似文献
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The physical and electrical properties of BF
2
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implanted polysilicon films subjected to rapid thermal annealing (RTA) are presented. It is found that the out diffusion
ofF and its segregation at polysilicon/silicon oxide interface during RTA are the major causes ofF anomalous migration. Fluorine bubbles were observed in BF
2
+
implanted samples at doses of 1×1015 and 5×1015 cm−2 after RTA. 相似文献
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The physical and electrical properties of BF_2~+ implanted polysilicon films subjectedto rapid thermal annealing(RTA)are presented.It is found that the out diffusion of F and itssegregation at polysilicon/silicon oxide interface during RTA are the major causes of F anomalousmigration.Fluorine bubbles were observed in BF_2~+ implanted samples at doses of 1×10~(15) and5×10~(15)cm~(-2) after RTA. 相似文献