Effects of high-energy ion implantation into metals

The laws and features of the formation of phase-structural states and defect formation during high-energy (E 100 MeV) ion implantation are reviewed. We consider the salient feature of such action in solids, namely, strong electron excitations in the solids and, therefore, the dominant value of electron stopping of ions; formation of buried tracks; and abrupt increase in the role of electron excitations in the generation of structural defects. High-energy and multiple-energy implantation is shown to be effective in modifying the physicomechanical properties of solids because of the formation of deep-lying doped layers and the considerable thickness of the ion-modified surface layer of the target.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 23–40, May, 1994.     

Modeling of the impurity distribution obtained by ion implantation

Models and a suite of programs (TRION, PIRSON, CHAPS, and DYCOD) that make it possible to calculate the impurity distribution for any implantation dose in a target with arbitrary composition are described. Test calculations for each program showed that the results are in good agreement with experimental data and with theoretical calculations performed by other authors. The suite of programs is intended for the development of the physical principals of ion-beam technologies.Translated from Izvstiya Vysshykh Uchebnykh Zavedenii, Fizika, No. 5, pp. 8–22, May, 1994.     

Implications of ion implantation technology on ion implanted active devices in silicon

The use of ion implantation to make integrated devices in silicon implies a good knowledge of the behavior of various parts of the device. This paper deals with three main topics: First the electrical characteristics of implanted diodes are described and their variations as a function of annealing temperature lead to a physical model taking into account the anisotropy of impurity concentration gradients. Second, experimental conditions before, during and after implantation are shown to have a strong influence on the quality of the final device, particularly on the value of the reverse leakage current. Third, effects of bombardment on silicon dioxide layers are studied. It is found that recovery of the layers is generally complete after a 300°C annealing.

Contributions of these various parameters to the overall electrical characteristics of ion implanted self-aligned MOS transistors are finally considered. Substantial increase in the maximum oscillation frequency and reduction of the active surface areas of the device are the most evident advantages of using ion implantation technology.     

Mechanism of light emission in low energy ion implanted silicon

A silicon wafer implanted with a single low energy (42 keV) silicon ion beam results in strong luminescence at room temperature. The implantation results in the formation of various luminescent defect centers within the crystalline and polymorphous regions of the wafer. The resulting luminescence centers (LC) are mapped using fluorescence lifetime imaging microscopy (FLIM). The emission from the ion-implanted wafer shows multiple PL peaks ranging from the UV to the visible; these emissions originate from bound excitonic states in crystal defects and interfacial states between crystalline/amorphous silicon and impurities within the wafer. The LCs are created from defects and impurities within the wafer and not from nanoparticles.     

Parameterization of the energy spectrum of an impurity ion in a perturbing field

The method of parameterizing the energy spectrum for systems with symmetries of the simplest point groups (SR groups) in an external stationary perturbing field has been generalized to the third approximation. The sums over intermediate states are partially convolved in 3n coefficients. We retain sums of derivatives of the given matrix elements which refer to states of all possible energy levels which enter into the external parameters which represent the minimal set of parameters describing the corrections to the energy. We give formulas for calculating the external parameters and establish the connection with the internal parameters in the usual version of the stationary theory of perturbations. In determining the parameters from experimental data the advantage of our method is found in those cases where the number of external parameters is less than the number of internal ones, which is the usual case. The method is illustrated using the Zeeman and Stark effects for energy levels of the T_2g type for an impurity ion having O_h site symmetry, as an example.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 61–67, March, 1995.     

中能高浓度氦离子注入对钨微观结构的影响

采用15 keV, 剂量1×10¹⁷/cm², 温度为600 ℃氦离子注入钨, 分别以块体钨研究氦离子对钨的表面损伤; 以超薄的钨透射电镜样品直接注入氦离子, 研究该条件下钨的微观结构变化, 以了解氦离子与钨的相互作用过程; 采用扫描电子显微镜、聚焦离子束扫描显微镜、透射电子显微镜、高分辨透射电子显微镜等分析手段研究氦离子注入对钨表面显微结构的影响及氦泡在钨微观结构演化中的作用.     

Tunneling energy levels of an off-center impurity of the hydroxyl ion in NaCl crystal

Fine structures of the vibrational spectrum of OH^– in NaCl have been investigated by their dependence on the OH^– concentration, temperature and uniaxial stress. The absorption bands of A and C at 3651. 2 and 3655.2 cm-1 are ascribed to the tunneling motion of the off-center impurity of OH^–. The stress splitting factor of the tunneling levels has been estimated to be B(S11–S12)=0.96±0.10 cm-1/10⁸ dyn cm-2 in the ground state and it is about 1.4 times larger in the vibrational excited state.     

等离子体浸没注入超低能注入掺杂研究

A plasma immersion ion implantation(PIII) system based on inductively coupled plasma(ICP) technology was designed. The PIII system had a cylindrical chamber, and a radio frequency(RF) power was used to sustain discharge and a pulsed voltage source was provided to bias the wafer. The RF power was coupled into chamber by a non-coplanar two-turn circular structure coil. A Langmuir probe was connected to the PIII system to diagnose the plasma parameters. The probe diagnosis indicated that plasma ion density of the system achieves 10¹⁷m^-3, the uniformity of the ion density along radial direction achieves 3.53%. Boron (B) and phosphorus (P) doping experiments were performed on the system. Results from second ion mass spectrum (SIMS) tests showed that the measured injection depth is about 10nm and the shallowest is 8.6 nm (at 10¹⁸cm^-3), the peak ion concentration is below the surface of the wafer, and the ion dose reaches above10¹⁵cm^-2 and the abrupt 2.5 nm/decade.     

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基于感应耦合等离子体(ICP)技术设计了一套用于在硅基片上制作形成超浅结的等离子体浸没注入(PIII)系统。该ICP PIII系统工作腔室为圆柱形,采用射频功率源,注入偏压源为一脉冲直流电压源,系统与Langmiur探针相连。探针诊断结果表明,该系统的等离子体离子密度达到1017m-3,离子密度径向均匀性达到3.53%。硼和磷的超低能注入试验的二次离子质谱测试结果表明：掺杂离子注入深度在10nm左右,最浅的注入深度为8.6nm(在注入离子密度为1018cm-3时);注入离子剂量达到了1015cm-2以上;掺杂离子浓度峰值在表面以下;注入陡峭度达到了2.5nm/decade。     

Local magnetic order in silicon implanted with high-energy ions

A room-temperature local magnetic order has been detected in silicon implanted with high-energy Kr⁺ and Xe⁺ ions. The evidence of the presence of the local magnetic order are the electron magnetic resonance lines with g-factor values of about 2.2 and 3.4, the hysteresis of the resonance magnetic field values of these lines, the anisotropy characteristic of ferromagnets, and the broadening. The ordering effect is retained after the annealing of samples at temperatures of no higher than 1270 K.     

Conductivity modification of ZnO film by low energy Fe ion implantation

In this paper we report the structural, optical and electrical behaviours of ZnO films implanted with 300 keV Fe¹⁰⁺ ions. From UV-vis spectroscopy it is observed that the band gap of the films decreases after implantation. Photoluminescence yield seems to increase in the implanted samples. From Hall measurements it is observed that the unimplanted sample shows n-type conductivity for the entire temperature range (100-300 K), whereas after implantation the samples show p-type conductivity for ≤200 K. The DC resistivity of the implanted samples is found to be lower than that of the unimplanted sample. We have found that the magnetoresistance of our samples is positive in the temperature range 200-300 K, but it becomes negative below 200 K.     

Investigations of ion implanted materials

A brief historical survey is given of 20 years of implantation, followed by an account of recent progress concerning lattice location, including ion and electron channeling. New results about the formation of molecules in noble metals are reported. Studies of vacancy complexes trapped at¹¹⁹Sn in Ni by the Aarhus group are compared with some new results obtained in Groningen on rolled and implanted samples.     

Analysis of ion implanted diamond

Ion implantation allows controlled introduction of impurities into diamond. A basic problem is to determine if the implanted layers are dominated by substitutional doping or radiation damage effects. Optical and electrical measurements on the implanted diamonds revealed (1) a degradation of the band-gap and sample coloration, (2) no optical absorption levels which would be characteristic of hydrogenic ionization levels, (3) resistivity activation energies of 0.2 to 0.3 eV independent of the ion specie, and (4) no measurable Hall Effect.

Phosphorous implanted layers in diamond were analyzed by means of the channeling technique. It was shown that (1) the diamond retained the implanted phosphorous atoms during a vacuum anneal at 950°C which restored crystalline order, (2) the implanted phosphorous atoms did not assume either substitutional or tetrahedral interstitial sites, (3) the measured projected range for 70 keV phosphorous in diamond of 450 ± 115 Å was consistent with theoretical range calculations and (4) a stable monolayer of oxygen atoms (5.5 × 10¹⁵/cm²) exists on the {111} surface of implanted and annealed diamond. The results of the crystal analysis show that these electrical and optical properties are dominated by radiation damage and not substitutional doping mechanisms.     

Athermal effects in ion implanted layers

Abstract

Defect structure and electrical characterization of boron and arsenic implanted layers has been investigated for implantation under athermal (light) excitation. This Photon Assisted (PA) implantation owes its specific properties to an additional electric field acting on charged particles including carriers and charged defects. It was shown that in case of n-type silicon this extra field draws charged vacancies and self-interstitials towards each other and, thus, diminishes transient diffusion of boron. This effect resulted in junctions which are about 20% shallower compared to conventionally processed reference wafers. Experiments using light of an Ar-ion laser and white light of a high pressure Xe arc lamp were compared. Some deactivation of carriers in the deeper laying parts of the p-region was always a by-product.     

Diffusion effects in ion implanted germanium

During isochronal anneal sequences the number of Hg, Tl and Bi atoms implanted into Ge has been found to decrease. This decrease occurs for all three species and has been observed for samples implanted at room temperature as well as for hot implants (300—350°C). The decrease starts at anneal temperatures of 350—550°C. Similar results have been obtained for In and Sb implanted Ge. For samples implanted with Hg to doses leading to amorphous layers, the decrease in the number of implanted atoms seems to be related to the reordering of the amorphous layer. The experiments show that no diffusion of the implanted atoms into the bulk material occurs and the decrease observed is attributed to be a diffusion of the atoms to the surface followed by outdiffusion, thermal etching or both.     

Passivation of laser induced defects in silicon by low energy hydrogen ion implantation

It is well established that the pulsed-laser annealing of as-implanted Si introduces electrically active defects. The aim of this paper is to show that these defects can be neutralized by low-energy hydrogen ion implantation. The techniques used for the sample characterization are current-voltage measurements and capacitance transient spectroscopy.     

Surface nano-structural modifications and characteristics in nitrogen ion implanted W as a function of temperature and N energy

The surface modifications of tungsten massive samples (0.5 mm foils) made by nitrogen ion implantation are studied by SEM, XRD, AFM, and SIMS. Nitrogen ions in the energy range of 16-30 keV with a fluence of 1 × 10¹⁸ N⁺ cm⁻² were implanted in tungsten samples for 1600 s at different temperatures. XRD patterns clearly showed WN₂ (0 1 8) (rhombohedral) very close to W (2 0 0) line. Crystallite sizes (coherently diffracting domains) obtained from WN₂ (0 1 8) line, showed an increase with substrate temperature. AFM images showed the formation of grains on W samples, which grew in size with temperature. Similar morphological changes to that has been observed for thin films by increasing substrate temperature (i.e., structure zone model (SZM)), is obtained. The surface roughness variation with temperature generally showed a decrease with increasing temperature. The density of implanted nitrogen ions and the depth of nitrogen ion implantation in W studied by SIMS showed a minimum for N⁺ density as well as a minimum for penetration depth of N⁺ ions in W at certain temperatures, which are both consistent with XRD results (i.e., I_{W (2 0 0)}/I_{W (2 1 1)}) for W (bcc). Hence, showing a correlation between XRD and SIMS results.     

The impact Of impurity ion in deuterium-tritium fuel on the energy deposition pattern Of The Proton Ignitor Beam

The ignition stage of deuterium-tritium fuel in inertial confinement fusion is a challenging task affected by many undesirable processes especially material mixing processes in the hot-spot region. In this research, an alternative proposal of the enhanced energy deposition in the proton fast ignition has been suggested. It consists of two primary assumptions of the beam-plasma system. In the first place, we have adopted the proton beam generated by TNSA or RPA mechanisms, each described by a Maxwellian or Gaussian energy distributions. Next, a realistic, non-uniform fuel plasma was adopted. Then, the cumulative stopping power of a proton beam of 10 kJ energy, penetrating the low content metal-contaminated deuterium-tritium fuel has been examined. It has been shown that in the case of the very low impurity fractions, irregular spatial fluctuations in the cumulative stopping power relative to pure fuel plasma emerges. However, at the higher concentrations, a systematic pattern becomes visible such that the contribution of the deep layers in the stopping power reduces. We observe the enhanced energy deposition close to the corona/dense core interface. It has been shown that the corona/dense core energy deposition ratio differs by up to 2.5% between pure and contaminated DT plasma. In the contaminated fuel plasma, energy deposition in the TNSA regime will effectively heat the plasma corona. While in the RPA counterpart, at a similar level of contamination, most of the incident beam energy remains inside the core fuel region.     

X-ray diffraction studies of silicon implanted with high-energy erbium ions

Silicon crystals after implantation of erbium ions with energies in the range 0.8–2.0 MeV and doses in the range 1×10¹²–1×10¹⁴ cm⁻² have been studied by two-and three-crystal x-ray diffraction. Three types of two-crystal reflection curves are observed. They correspond to different structural states of the implanted layers. At moderate doses (1×10¹²–1×10¹³ cm⁻²) a positive strain is observed, due to the formation of secondary radiation defects of interstitial type. An increase of the implantation dose is accompanied by the formation of an amorphous layer separating the bulk layer and a thin monocrystalline surface layer. At an implantation dose of 1×10¹⁴ cm⁻² the monocrystalline surface layer is completely amorphized. Parameters of the implantation layers are determined. A model of the transformation of structural damage is discussed. Fiz. Tverd. Tela (St. Petersburg) 39, 853–857 (May 1997)     

Surface composition and surface energy of Teflon treated by metal plasma immersion ion implantation

Plasma immersion ion implantation using a metal vacuum vapor arc (MEVVA) or cathodic arc source was used to modify the fluorine-based polymer, Teflon. Several transition metal ions such as Co, Ni, Cu were introduced into plasma and implanted into the Teflon surface. The chemical composition of the modified surface was determined by Rutherford backscattering spectrometry (RBS) and X-ray photoelectron spectroscopy (XPS). The metals were found to be distributed several nanometers from the surface and XPS results showed the formation of metallic carbides and fluorides on the surface. Contact angle measurement results demonstrate the favorable change in the wettability from being hydrophobic to hydrophilic. Our study shows that the increase of the surface energy is due to the change of the surface interaction properties after metal plasma implantation.