NQR indications of unconventional magnetism in some bismuth-based diamagnets

An evidence that local ordered magnetic fields from 30 to 200 G exist in diamagnets α-Bi₂O₃, Bi₃O₄Br, Bi₄Ge₃O₁₂, Bi₂Al₄O₉ which comprise neither d- nor f-elements was earlier given by the zerofield and Zeeman-perturbed²⁰⁹Bi nuclear quadrupole resonance (NQR) spectra. With a view to find similar spectroscopic effects in other compounds, we examined the²⁰⁹Bi NQR Zeeman-perturbed spectra of the Bi₃B₅O₁₂ oriented single crystal as well as the zero-field spin echo envelopes in Bi₃B₅O₁₂ and Bi₂Ge₃O₉. Distinctive modulations were displayed by the zero-field²⁰⁹Bi spin echo envelopes in Bi₂Ge₃O₉ powder. The modeling of the spin echo envelopes within the density matrix formalism explained the observed effect by the presence of local ordered magnetic field of the order of 65 G at the Bi atoms. The zero-field modulations of the²⁰⁹Bi spin echo envelopes were also observed in Bi₃B₅O₁₂ indicating the presence of the internal source of line splitting. This finding and considerable deviation of the resonance intensity ratios from that in a pure NQR, found in the zero-field²⁰⁹Bi spectrum of the single crystal, were understood as indirect evidences that a local ordered magnetic field exists also in Bi₃B₅O₁₂. The zero-field²⁰⁹Bi spin echo envelopes assigned to the lines split by the local magnetic fields in α-Bi₂O₃ and Bi₄Ge₃O₁₂ were observed to display modulations on the appropriate curves.     

Local Magnetic Fields in Some Bismuth-Based Diamagnets

Evidence that local ordered magnetic fields from 30 to 250 G exist in bismuth-based diamagnetic compounds comprising neither d- nor f-elements was given by ²⁰⁹Bi NQR spectroscopy and supported by SQUID measurements of α-Bi₂O₃. The NQR experiments involved a study of the zero-field line shapes, analysis of the Zeeman-perturbed patterns, and examination of the zero-field spin-echo envelopes in single crystals and powders. The results of the experiments followed by computer modeling of the observed spectra were interpreted assuming that ordered magnetic fields are located at the bismuth sites in α-Bi₂O₃, Bi₃O₄Br, Bi₂Al₄O₉, Bi₄Ge₃O₁₂, Bi₂Ge₃O₉ and perhaps in Bi₃B₅O₁₂. A survey of the related ²⁰⁹Bi NQR data is here presented.     

Synthesis and visible light photocatalysis water splitting property of chromium-doped Bi4Ti3O12

Photocatalysts Bi₄Ti_3 ? xCr_xO₁₂(x = 0.00, 0.06, 0.15, 0.30, 0.40, and 0.50) with perovskite structure were synthesized by sol–gel method and their electronic structures and photocatalytic activities were investigated. The Bi₄Ti_2.6Cr_0.4O₁₂ photocatalyst exhibited the highest performance of H₂ evolution in methanol aqueous solution (58.1 μmol h^? 1 g^? 1) under visible light irradiation (λ > 400 nm) without a co-catalyst, whereas no H₂ evolution is observed for Bi₄Ti₃O₁₂ under the same conditions. The UV–vis spectra indicated that the Bi₄Ti_2.6Cr_0.4O₁₂ had strong photoabsorption in the visible light region. The results of density functional theory (DFT) calculation illuminate that the conduction bands of Bi₄Ti₃O₁₂ are mainly attributable to the Ti 3d + Bi 6p orbitals, and the valence bands are composed of O 2p + Bi 6s hybrid orbitals, while the conduction bands of chromium-doped Bi₄Ti₃O₁₂ are mainly attributable to the Ti 3d + Bi 2p + Cr 3d orbitals, and the O 2p + Cr 3d hybrid obitals are the main contribution to the valence band.     

Broadband infrared luminescence in Yb-doped Bi2O3–GeO2 glasses

The Yb-doped Bi₂O₃–GeO₂ glasses were prepared by the conventional melt quenching technique. Near-infrared (NIR) broadband emission was found at about 1024 nm, and 1330 nm (under 785 nm excitation), and the measured fluorescent lifetime was about several hundred microseconds. The emission intensity of Yb-doped Bi₂O₃–GeO₂ glasses increased with increasing of Yb dopant in our experiments. The NIR emission should be related to Yb³⁺ and lower valence Bi ions.     

Photoluminescence of Lu3Al5O12:Bi and Y3Al5O12:Bi single crystalline films

Single crystalline films of Lu₃Al₅O₁₂:Bi and Y₃Al₅O₁₂:Bi have been studied at 4.2–450 K by the time-resolved luminescence spectroscopy method. Their emission spectrum consists of two types of bands with strongly different characteristics. The ultraviolet band consists of two components, arising from the electronic transitions which correspond to the ³P₁ → ¹S₀ and ³P₀ → ¹S₀ transitions in a free Bi³⁺ ion. At T < 80 K, mainly the lower-energy component with the decay time ～10^?3 s is observed, arising from the metastable ³P₀ level. At T > 150 K, the higher-energy component prevails, arising from the thermally populated emitting ³P₁ level. The visible emission spectrum consists of two dominant strongly overlapped broad bands with large Stokes shifts. At 4.2 K, their decay times are ～10^?5 s and ～10^?4 s and decrease with increasing temperature. Both of the visible emission bands are assumed to be of an exciton origin. The lower-energy band is ascribed to an exciton, localized near a single Bi³⁺ ion. The higher-energy band, showing a stronger intensity dependence on the Bi³⁺ content, is assumed to arise from an exciton, localized near a dimer Bi³⁺ center. The structure of the corresponding excited states is considered, and the processes, taking place in these states, are discussed.     

Anomalous magnetism and 209Bi nuclear spin relaxation in Bi4Ge3O12 crystals

The quadrupole ²⁰⁹Bi spin–spin and spin–lattice relaxation were studied within 4.2–300 K for pure and doped Bi₄Ge₃O₁₂ single crystals which exhibit, as was previously found, anomalous magnetic properties. The results revealed an unexpectedly strong influence of minor amounts of paramagnetic dopants (0.015–0.5 mol.%) on the relaxation processes. Various mechanisms (quadrupole, crystal electric field, electron spin fluctuations) govern the spin–lattice relaxation time T ₁ in pure and doped samples. Unlike T ₁, the spin–spin relaxation time T ₂ for pure and Nd-doped samples was weakly dependent on temperature within 4.2–300 K. Doping Bi₄Ge₃O₁₂ with paramagnetic atoms strongly elongated T ₂. The elongation, although not so strong, was also observed for pure and doped crystals under the influence of weak (～30 Oe) external magnetic fields. To confirm the conclusion about strong influence of crystal field effects on the temperature dependence of T ₁ in the temperature range 4.2–77 K, the magnetization vs. temperature and magnetic field was measured for Nd- and Gd-doped Bi₄Ge₃O₁₂ crystals using a SQUID magnetometer. The temperature behavior of magnetic susceptibility for the Nd-doped crystal was consistent with the presence of the crystal electric field effects. For the Gd-doped crystal, the Brillouin formula perfectly fitted the curve of magnetization vs. magnetic field, which pointed to the absence of the crystal electric field contribution into the spin–lattice relaxation process in this sample.     

Anionic conductors Ln2/3[Bi12O14](MoO4)5 with Ln = La,Nd, Gd,Ho, Yb. Synthesis–spark plasma sintering–structure–electric properties

A new series of columnar phases Ln_2/3□_1/3[Bi₁₂O₁₄](MoO₄)₅ (□ vacancy) with Ln = La, Nd, Gd, Ho and Yb have been synthesized and structurally characterized. They feature the same formula as the molybdate phase Bi_2/3□_1/3[Bi₁₂O₁₄](MoO₄)₅ and crystallize in the monoclinic system, space group P2/c. These phases are isostructural with the prototype structure Bi[Bi₁₂O₁₄](MoO₄)₄(VO₄). Pellets of this rare-earth series obtained by spark plasma sintering and measured by impedance spectroscopy show a good anionic conductivity with a parabolic evolution whose maximum is raised by the Gd species at a determined value σ = 6.6 × 10^− 3 S cm^− 1 at 980 K.     

Growth and characterization of Nd:Bi12SiO20 single crystal

A Nd:Bi₁₂SiO₂₀ crystal was grown by the Czochralski method. The thermal properties of the crystal were systematically studied. The thermal expansion coefficient was measured to be α=11.42×10^?6 K^?1 over the temperature range of 295–775 K, and the specific heat and thermal diffusion coefficient were measured to be 0.243 Jg^?1 k^?1 and 0.584 mm²/s, respectively at 302 K. The density was measured to be 9.361 g/cm³ by the buoyancy method. The thermal conductivity of Nd:Bi₁₂SiO₂₀ was calculated to be 1.328 Wm^?1 K^?1 at room temperature (302 K). The refractive index of Nd:Bi₁₂SiO₂₀ was measured at room temperature at eight different wavelengths. The absorption and emission spectra were also measured at room temperature. Continuous-wave (CW) laser output of a Nd:Bi₁₂SiO₂₀ crystal pumped by a laser diode (LD) at 1071.5 nm was achieved with an output power of 65 mW. To our knowledge, this is the first time LD pumped laser output in this crystal has been obtained. These results show that Nd:Bi₁₂SiO₂₀ can serve as a laser crystal.     

The broadband NIR emission properties of Bi doped La2O3–Al2O3–SiO2 glass

Bi₂O₃ doped 65SiO₂–20Al₂O₃–15La₂O₃ (in mole%) glasses were prepared by the traditional melting–quenching method. The spectroscopic properties and mechanism of NIR broadband emission in these glasses were investigated in this work. Three excitation wavelengths of 500, 700 and 800 nm were used to test emission spectra. The emission band under 500 nm excitation can be regarded as combination of emission bands under 700 and 800 nm excitation. 2.0 mole% is found to be the optimal Bi₂O₃ doping level in this glass. Under 500 nm excitation its emission peak, FWHM and lifetime of emission band are 1160 nm, 300 nm and 569 μs, respectively. The longest fluorescent lifetime reaches 620 μs under 700 nm excitation. The valence state of Bi in these glasses is suggested to be lower than +3 by X-ray photoelectron spectroscopy. With the help of energy matching, we infer that both Bi⁰ and Bi⁺ centers are responsible for the NIR fluorescence of Bi₂O₃ doped 65SiO₂–20Al₂O₃–15La₂O₃ glass.     

Nuclear quadrupole resonance studies of209Bi in Bi4(GeO4)3 and Bi4(SiO4)3

Nuclear quadrupole resonance (NQR) of²⁰⁹Bi has been studied in Bi₄ (GeO₄)₃ and Bi₄ (SiO₄)₃ using a wide band coherence-controlled superregenerative oscillator-detector. All the four allowed (ΔM _I=±1) transitions are observed. In both cases the electric field gradient (EFG) tensor is axially symmetric (η=0.0). The quadrupole coupling constante ² qQ is measured to be 490.8±1 MHz and 470.4±1 MHz respectively. It is pointed out that the purely ionic model is inadequate to understand these results. With the available experimental accuracy and the strength of the applied electric field (∼ 6 KV/cm), no field-induced effects on the NQR spectrum could be observed in the case of Bi₄ (SiO₄)₃.     

Structural and vibrational properties of PVT grown Bi2Te3 microcrystals

High-quality Bi₂Te₃ microcrystals have been grown by physical vapor transport (PVT) method without using a foreign transport agent. The microcrystals grown under optimal temperature gradient are well facetted and they have dimensions up to ～100 μm. The phase composition of grown crystals has been identified by X-ray single crystal structure analysis in space group R3?m, a=4.3896(2) Å, b=30.5019(10) Å, Z=3 (R=0.0271). Raman microspectrometry has been used to describe the vibration parameters of Bi₂Te₃ microcrystals. The FWHM parameters obtained for representative Raman lines at 61 cm^?1 and 101 cm^?1 are as low as 3.5 cm^?1 and 4.5 cm^?1, respectively.     

Luminescence and energy transfer in La2O3–Nb2O5–B2O3:M3+ (M=Bi,Eu, Dy) glasses

The luminescence and energy transfer processes in La₂O₃–Nb₂O₅–B₂O₃:M³⁺ (M=Bi, Eu, Dy) glasses were investigated using luminescence spectroscopy (excitation and emission, down to 4.2 K) and decay time measurements at room temperature. The observation of niobate luminescence implies a considerable degree of short- and intermediate-range order in these glasses. Energy transfer from the niobate groups to the lanthanide ions was observed for Eu³⁺, but not for Dy³⁺, suggesting that the energy transfer process occurs to the charge-transfer state of the Eu³⁺ ion, rather than to its f-levels. Inter-Eu³⁺ energy transfer was negligible in the concentration range investigated (up to 3 mol%). In contrast, cross-relaxation processes between Dy³⁺ ions were active at concentrations as low as 0.5 mol%. In the Bi³⁺ doped glasses the energy transfer was observed from the Bi³⁺ excited levels to the oxygen deficient niobate groups.     

X-ray excited luminescence and photoluminescence of Bi4(GeO4)3 glass-ceramics

Bi₄(GeO₄)₃ glass materials have been characterized by X-ray excited luminescence, photoluminescence and cathodo-luminescence measurements. The materials were obtained by crystallization at different temperatures and their spectroscopic parameters were compared before and after crystallization. Thermoluminescence curves recorded after electron irradiation of BGO glass behave similarly to BGO crystals, showing several peaks between 408 K (135 °C) and 610 K (337 °C). The differences between the Bi₄(GeO₄)₃ crystals and glass materials are believed to result from the random distribution of GeO₄ tetrahedra around Bi³⁺ ions which influences the photoluminescence and TL parameters. The CL images of glass-ceramic samples obtained by partial crystallization at 600 °C show luminescent crystalline structures, which are probably responsible for the increase in scintillation efficiency.     

Synthesis and characterization of (Bi,Cu)Sr2(RE,Ca)Cu2Oz (RE: Y or rare-earth element)

Samples with nominal compositions of x = 0–0.1 in (Bi_(1+3x)/3Cu_(2?3x)/3)Sr₂(RE_1?xCa_x)Cu₂O_z ((Bi,Cu)-“1-2-1-2”; RE: Y or rare-earth element) were synthesized by a solid-state reaction method and characterized by means of X-ray diffractometry (XRD). It is confirmed that the (Bi,Cu)-“1-2-1-2” forms only when RE = Y, Dy and Ho. Single- or nearly single-phase samples are obtained for x = 0–0.05 and the Ca-free composition of this compound is determined to be (Bi_1/3Cu_2/3)Sr₂RECu₂O_z. Since ionic radii of Y, Dy and Ho are very close to each other and this seems to be an essential factor for the stability of the (Bi,Cu)-“1-2-1-2”.     

SILAR deposited Bi2S3 thin film towards electrochemical supercapacitor

Bi₂S₃ thin film electrode has been synthesized by simple and low cost successive ionic layer adsorption and reaction (SILAR) method on stainless steel (SS) substrate at room temperature. The formation of interconnected nanoparticles with nanoporous surface morphology has been achieved and which is favourable to the supercapacitor applications. Electrochemical supercapacitive performance of Bi₂S₃ thin film electrode has been performed through cyclic voltammetry, charge-discharge and stability studies in aqueous Na₂SO₄ electrolyte. The Bi₂S₃ thin film electrode exhibits the specific capacitance of 289 Fg⁻¹ at 5 mVs⁻¹ scan rate in 1 M Na₂SO₄ electrolyte.     

Magnetoresistance hysteresis of bulk textured Bi1.8Pb0.3Sr1.9Ca2Cu3Ox + Ag ceramics and its anisotropy

Magnetoresistance of bulk textured Bi_1.8Pb_0.3Sr_1.9Ca₂Cu₃O_x + Ag ceramics has been studied in the magnetic fields applied parallel and perpendicular to a–b planes of Bi2223 crystallites. Besides well known anisotropy of magnetoresistance of textured superconductors (R_H || c > R_H || a–b), anisotropic hysteresis of R(H) dependences was investigated. Parameters characterizing hysteretic R(H) curves differ for the cases H || c and H || a–b. This behavior is explained within the model of a granular superconductor where the total magnetic induction in the intercrystallite boundaries is superposition of the external field and the magnetic field induced by dipole magnetic moments of neighbor crystallites.     

Gadolinium pyrosilicate single crystals for gamma ray and thermal neutron monitoring

Bulk Gd₂Si₂O₇:Ce (GPS:Ce) single crystals obtained by Czochralski method demonstrate a high light output at γ-irradiation (3.8 times higher in comparison with Bi₄Ge₃O₁₂ (BGO)), energy resolution 13% (137Cs, 662 KeV), fast decay time (41.7 ns), and good thermal stability of light output (up to 425 K). This combination of characteristics makes this scintillator very attractive for medical imaging and high-temperature applications. Light output at thermal neutron monitoring is evaluated as twice higher in comparison with Gd₂SiO₅:Ce (GSO). The observed rather high afterglow level (0.2% after 20 ms) and moderate energy resolution (13%) certifies a room for improvement of these parameters by further optimization of crystal quality.     

Infrared broadband emission of bismuth–thulium co-doped lanthanum–aluminum–silica glasses

The Bi–Tm co-doped SiO₂–Al₂O₃–La₂O₃ (SAL) glasses, which exhibited a broadband near-infrared (NIR) emission was investigated by the optical absorption and photoluminescence spectra. The super broadband near-infrared emission from 1000 to 2100 nm, which covered the whole O, E, S, C and L bands, was observed in the Bi–Tm co-doped samples, as a result of the overlap of the Bi-related emission band (centered at 1270 nm) and the emission from Tm^{3+ 3}H₄→³F₄ transition (1440 nm) as well as Tm^{3+ 3}F₄→³H₆ transition (1800 nm). Relative luminescence intensity at 1270, 1440 and 1800 nm wavelength varied depending on the mixing ratio of Bi and Tm and the full-width at half-maximum (FWHM) extending from 1000 to 1600 nm could be 400 nm. These results indicated that Bi–Tm co-doped SiO₂–Al₂O₃–La₂O₃ glasses could provide potential applications in tunable lasers as well as the broadband optical amplifiers in WDM system.     

Magnetic phase diagram of GdNi2Ge2: a magnetisation and specific-heat study

The antiferromagnetic body-centred tetragonal compound GdNi₂Ge₂ orders at 28 K. Successive magnetic phase transitions are observed by specific-heat and magnetisation measurements as a function of temperature in different applied magnetic fields. Plots of M² vs. B/M (Arrott-plots) show various anomalies. On the basis of the experimental results, a magnetic phase diagram is constructed. The multiple magnetic phase transitions are discussed in terms of competing ordering modes in the Gd sublattice.     

Effect of fluorine doping on phase formation and properties of Bi(Pb)-2223 ceramics

Superconducting ceramics of Bi_1.6Pb_0.4Sr₂Ca₂Cu₃O_yF_x (x = 0–0.6) are prepared in air by conventional solid state reaction and characterized. The study shows that the melting point of the samples decreases as fluorine content increases. As a consequence, the grain size increases with the doping level and for x = 0.6, the sample is completely deformed and presents a concave shape making impossible the measurements on it. The Vickers microhardness reaches its maximum for x = 0.2. The analysis of the X-ray diffraction results reveals that all the samples are composed of only Bi(Pb)-2212 and Bi(Pb)-2223 phases. The highest proportion of the high T_c phase (Bi(Pb)-2223) is also observed for x = 0.2 and is about 67.32%. The refinement of cell parameters is done by considering the structural modulation. The results show that the doping leads to a reduction of cell volume as well as the a axis component of modulation. From resistivity versus temperature measurements, it is shown that the doped phases exhibit higher onset critical transition temperatures than the undoped one. The residual resistivity increases with fluorine content suggesting that the doping introduces structural defects and disorder into the samples. The obtained critical current density at 77 K under zero magnetic field also increases with fluorine doping.