多个单负材料缺陷一维光子晶体的孪生缺陷模

分析了含有多个单负材料缺陷层的一维光子晶体中缺陷模的性质。在两种单负(负介电常量或负磁导率)材料交替堆叠形成的一维光子晶体中,掺入了多个周期排列的单负材料缺陷层,得到在该光子晶体的零有效相位(zero-effective phase)带隙内存在孪生缺陷模。通过改变缺陷的数目或缺陷层的厚度,可调节缺陷模的频率间隔,但缺陷模的数目总保持为两个。计算结果显示,该孪生缺陷模的频率对入射角度的依赖较弱;随着入射角度的改变,缺陷模频率的相对改变量总保持在0.03以下。此外,对应缺陷模频率的电场在该光子晶体中传播时,将被强烈地局域在缺陷层与周期结构的交界面上。     

一维光子晶体掺杂缺陷模研究

用特征矩阵法计算了光波在包含多种掺杂缺陷的一维光子晶体中的传播规律,与不包含缺陷的结构相比较,在禁带中形成缺陷模。缺陷模的位置、数目和强度不仅和缺陷的产生方式有关,还和缺陷位置处的光学厚度及折射率的变化有关。当掺杂缺陷的位置呈等间距时,相应缺陷模也呈等间距排列。随着掺杂缺陷光学厚度的变化,缺陷模的位置、数目也随之变化。保持掺杂缺陷光学厚度不变,掺杂缺陷折射率的变化将会引起缺陷模强度的变化,并存在一个最大值。缺陷模的出现一般使带隙加宽,尤其是掺杂介质的折射率与周期介质的折射率差别较大时更加明显。掺杂空气介质时可使缺陷模的透射率近似为1。     

Surface defect gap solitons in two-dimensional optical lattices

We investigate the existence and stability of surface defect gap solitons at an interface between a defect in a two-dimensional optical lattice and a uniform saturable Kerr nonlinear medium. The surface defect embedded in the two-dimensional optical lattice gives rise to some unique properties. It is interestingly found that for the negative defect, stable surface defect gap solitons can exist both in the semi-infinite gap and in the first gap. The deeper the negative defect, the narrower the stable region in the semi-infinite gap will be. For a positive defect, the surface defect gap solitons exist only in the semi-infinite gap and the stable region localizes in a low power region.     

Localized defect modes of water waves through two-dimensional periodic bottoms with point defects

In this Letter, the localized defect modes of water waves over two-dimensional periodic bottoms with a point defect are investigated by supercell calculations and plane-wave expansion method. Two kinds of defects are introduced, one is a radius defect created by changing radius of cylinder, and another is a depth defect created by changing its depth. The results indicate that both can create defect modes, and the amplitude distributions of the defect modes are well localized in the vicinity of the defects with various patterns. The influences of radius and depth of defect cylinder on the defect modes are investigated in detail.     

Molecular-dynamics simulation of defect formation energy in boron nitride nanotubes

We investigate the defect formation energy of boron nitride nanotubes (BNNTs) using molecular dynamics simulation. Although the defect with tetragon–octagon pairs (TOP) is favored in the flat BNNTs cap, BN clusters, and the growth of BNNTs, the formation energy of the TOP defect is significantly higher than that of the pentagon–heptagon pairs (PHP) defect in BNNTs. The PHP defect reduces the effect of the structural distortion caused by the TOP defect, in spite of homoelemental bonds. The instability of the TOP defect generates the structural transformation into BNNTs with no defect at about 1500 K. This mechanism shows that the TOP defect is less favored in case of BNNTs.     

Optical defect modes at an active defect layer in photonic liquid crystals

An analytic approach to the theory of the optical defect modes in photonic liquid crystals in the case of an active defect layer is developed. The analytic study is facilitated by the choice of the problem parameters related to the dielectric properties of the studied structures. The chosen models allow eliminating polarization mixing at the external surfaces of the studied structures. The dispersion equations determining the relation of the defect mode (DM) frequency to the dielectric characteristics of an isotropic, birefringent and absorbing (amplifying) defect layer and its thickness are obtained. Analytic expressions for the transmission and reflection coefficients of the defect mode structure (DMS) (photonic liquid crystal-active defect layer-photonic liquid crystal) are presented and analyzed. The effect of anomalously strong light absorption at the defect mode frequency for an absorbing defect layer is discussed. It is shown that in a distributed feed-back lasing at the DMS with an amplifying defect layer, adjusting the lasing frequency to the DM frequency results in a significant decrease in the lasing threshold and the threshold gain decreases as the defect layer thickness increases. It is found that, generally speaking, the layer birefringence and dielectric jumps at the interfaces of the defect layer and photonic liquid crystal reduce the DM lifetime in comparison with the DMS with an isotropic defect layer without dielectric jumps at the interfaces. Correspondingly, generally speaking, the effect of anomalously strong light absorption at the defect mode frequency and the decrease in the lasing threshold are not so pronounced as in the case of the DMS with an isotropic defect layer without dielectric jumps at the interfaces. The case of a DMS with a low defect layer birefringence and sufficiently large dielectric jumps are studied in detail. The options of effectively influencing the DM parameters by changing the defect layer dielectric properties, and the birefringence in particular, are discussed.     

Localized states of acoustic waves in three-dimensional periodic composites with point defects

Acoustic point defect states in the three-dimensional simple-cubic arrays of water spheres embedded in a mercury host are studied. Two kinds of defects are introduced, one is a sphere defect created by changing its radius, and another is a cubic defect obtained by replacing one of the spheres with a cube. The results show that a defect band appears in the band gap of the perfect crystals. The calculations show that the defect modes are localized around the defect. The influence of the filling fraction and the geometry of the defect on the defect modes are investigated in detail.Received: 5 May 2003, Published online: 11 August 2003PACS: 43.20.+g General linear acoustics - 62.60.+v Acoustical properties of liquids - 61.72.Ji Point defects (vacancies, interstitials, color centers, etc.) and defect clusters     

Properties of defect modes in one-dimensional photonic crystals containing a graded defect layer

The properties of defect modes in one-dimensional photonic crystals (PCs) containing a graded defect layer are studied theoretically. The relative permittivity and magnetic permeability of the graded defect layer vary continuously along the direction perpendicular to the surface of the layer. The effect of the linear gradation profiles of the relative permittivity and permeability are studied in detail. It is shown that the defect modes appear inside the forbidden band gaps in its transmission spectra and the gradation profiles of the relative permittivity and permeability affect the defect modes significantly. By changing the gradation parameters, the intensity and position of the defect modes can be tuned. Therefore, introducing a graded defect layer in one-dimensional PCs provides possible mechanism for tuning the defect modes. This may be useful in the design of channeled filters.     

Purely transmitting defect field theories

We define an infinite class of integrable theories with a defect which are formulated as chiral defect perturbations of a conformal field theory. Such theories are massless in the bulk and are purely transmitting through the defect. The integrability of these theories requires the introduction of defect degrees of freedom. Such degrees of freedom lead to a novel set of Yang-Baxter equations. The defect degrees of freedom are identified through folding the chiral defect theories onto massless boundary field theories. The examples of the sine-Gordon theory and Ising model are worked out in some detail.     

Defect modes supported by optical lattices in photovoltaic-photorefractive crystals

We study defect modes in optically induced one-dimensional lattices in photovoltaic-photorefractive crystals. These defect modes exist in different bandgaps due to the change of defect intensity. For a positive defect, defect mode branches exist not only in the semi-infinite bandgap, but also in the first and second bandgaps. When the defect mode branch is fixed, the confinement of defect modes increases with the defect strength parameter. For a negative defect, defect mode branches exist only in the first and second bandgaps. For a given defect mode branch, the strongest confinement of the defect modes appears when the lattice intensity at the defect site is not the smallest in its branch. On the other hand, when the defect strength parameter is fixed, the most localized defect modes arise in the semi-infinite bandgap for the positive defect and in the first bandgap for the negative defect.     

一维光子晶体缺陷模的偏振特性研究

利用周期结构的布洛赫定理推导了一维无限光子晶体缺陷模方程,研究了缺陷模的偏振特性,以及在不同入射角和缺陷层厚度下缺陷模位置的变化.利用传输矩阵方法对有限周期数光子晶体也进行了研究,分别对应一维无限光子晶体和有限周期数光子晶体给出了数值计算结果.通过比较这两者的数值结果得出了缺陷模随入射角和缺陷层厚度变化的一般规律.     

带缺陷二维光子晶体的透射谱研究

在一维线缺陷的研究基础上进一步应用转移矩阵方法数值研究带其它缺陷的二维正方晶格圆柱光子晶体的透射谱,缺陷的引入使得原来不透电磁波的禁带中,出现了缺陷模,即某一波长的电磁波可以透过,计算结果表明禁带位置、宽度,缺陷模的位置与透过率随着缺陷的种类、介质、程度有关,特别是都受到波源的入射角调制.     

研究一维掺杂声子晶体缺陷模的解析方法

为了对一维掺杂声子晶体的缺陷模进行解析研究,利用多波束干涉原理和布洛赫定理,推导出一维掺杂声子晶体的缺陷模频率的解析公式.利用它对一维掺杂声子晶体的缺陷模进行了解析研究,得到了缺陷模频率的变化规律.该方法克服了其他方法不能对缺陷模进行解析研究的不足,是一种研究一维掺杂声子晶体的缺陷模的精确、有效方法. 关键词： 声子晶体 声波 缺陷模 解析方法     

Defect vector gap solitons in photonic lattices

The existence and general properties of different kinds of defect vector gap solitons in one dimensional optically induced photonic defect lattice with focusing saturable nonlinearity in photorefractive crystal are analyzed. The defect is well localized in a single site with two existence forms, namely repulsive and attractive defect. Propagation constants of two beams that compose defect vector gap solitons could be from same gap or from different gaps. We show that some kinds of unstable scalar defect gap solitons could be stabilized by their corresponding vector cases.     

含复合缺陷层的光子晶体的光学特性

运用传输矩阵法研究了在一维光子晶体中插入缺陷层的透光特性。在无缺陷层的一维光子晶体中能产生467~510 nm、1 279~1 715 nm两处明显的光子带隙。重点研究了插入缺陷层后,在1 279~1 715 nm的光子带隙中缺陷层厚度和入射角度大小分别与透射光谱变化的关系。研究发现：缺陷模的位置对入射角变化很敏感;出现缺陷模的数量和插入缺陷层的数量相同;一维光子晶体厚度的增大不会改变缺陷模的数量和位置,只改变透射峰的宽度和透射率。     

用一维光子带隙结构增强硫化镉双光子吸收研究

用真空镀膜方法制备了含有单个CdS缺陷层的具有不同周期和结构参量的TiO2／SiO2一维光子晶体。用抽运一探测技术研究了CdS缺陷层的双光子吸收（TPA）现象。实验结果表明：一维光子晶体中CdS缺陷层的双光子吸收显著增强。不同周期和结构参量的一维光子晶体中CdS缺陷层的双光子吸收系数不同。双光子吸收的增强来源于由光局域化导致的缺陷层的电场强度的增加。缺陷层电场强度与一维光子晶体的结构有关,如周期,光子带隙的位置与宽度及缺陷模式等因素都会影响缺陷层电场强度。采用四分之一波长的高低折射率介质层和与入射波长匹配的缺陷模可以得到最大的缺陷层电场强度。     

双缺陷模一维光子晶体的双光子吸收增强研究

采用真空镀膜工艺制备了具有762 nm和800 nm双缺陷模的含两个CdS缺陷层的TiO2/SiO2一维光子晶体,运用抽运探测技术测量了其双光子吸收。对于两个缺陷模,双光子吸收均得到很大的增强,其中缺陷模为800nm时的双光子吸收系数307 cm/GW要大于缺陷模为762 nm时的116 cm/GW,分别为单层CdS薄膜的48倍和18倍。这种双光子吸收的增强是由于光局域化导致一维光子晶体缺陷层内的电场强度增大而形成的。通过传输矩阵法计算了一维光子晶体的内部场强,发现800 nm波长光入射时缺陷层内的电场强度要大于762 nm波长光入射时的电场强度值。     

二维光子晶体缺陷模特性研究

用时域有限差分法计算了二维光子晶体的带隙和缺陷模,结果表明:在缺陷中心位置其强度达到最大值,离缺陷中心越远,强度越小.比较了方形介质柱与圆形介质柱光子晶体缺陷模:圆形缺陷缺陷模衰减的特征长度较小,但其缺陷模的品质因数较大.缺陷模的中心频率随缺陷介电常数的增大而变小,并近似成线性关系.     

Compton散射对磁化等离子体光子晶体缺陷模密温特性的影响

应用多光子非线性Compton散射模型和有限时域差分法,对Compton散射对磁化等离子体光子晶体缺陷模密温特性的影响进行了理论分析和数值模拟。结果表明,与Compton散射前的情况相比,Compton散射使低温低频处光子禁带中存在缺陷模的明显度降低,缺陷模频率增大,缺陷模和透射率峰值减小;使高温高频处缺陷模和透射率峰值、缺陷模频率显著增大,禁带宽减小,缺陷模位置向高频方向移动。随着电子密度的增大,散射减小了禁带增大效应和缺陷模减小效应,增强了缺陷模频率增大效应;随着电子密度的降低,散射增强了禁带变窄效应、缺陷模峰值增大效应和缺陷模频率减小效应。利用Compton散射,可实现对缺陷模密温特性的有效控制。     

光学材料亚表面缺陷处强激光电磁场分布的3维模拟

 利用时域有限差分法求解麦克斯韦旋度方程,研究了光学材料表面缺陷对入射激光场的调制作用,建立了亚表面缺陷的3维模型。以长方体表面缺陷为例,对缺陷附近的光场分布进行了3维数值计算,给出了电场强度3维分布图和缺陷不同尺寸时的最大电场强度。研究表明,相对于2维简化情况,3维表面缺陷对强激光电磁场的调制作用更加明显。