氯化锌钾单晶的直拉法生长

利用差热分析和X射线粉末衍射研究了KCl-ZnCl2部分二元相图,采用丘克拉斯基技术生长出光学质量的氯化锌钾单晶,其结构为β-K2SO4型(Pna21).晶胞参数为a=1.24051nm,b=2.67806nm,c=0.72554nm.     

浸没籽晶法生长La2CaB10O19单晶的研究

采用浸没籽晶法以CaO-Li2O-B2O3为助熔剂生长出La2CaB10O19单晶.籽晶的方向对晶体质量有较大的影响.晶体结构导致生长出的晶体均呈现板状外形,并且容易沿(001)面解理;捆绑晶体的铂丝嵌入晶体加剧了晶体的解理.然而解理和铂丝嵌入对不同方向籽晶生长出晶体的质量影响各不相同,对于晶体生长过程溶质输运的影响也不相同,实验发现,[101]方向为本实验条件下最佳的晶体生长方向.     

Growth of Neodymium Pentaphosphate Single Crystals by the Flux Seeded Technique

Single crystals of neodymium pentaphosphate, NdP₅O₁₄, were grown by the flux seeded technique. The optimum growth conditions are scribed for obtaining a large crystal having well-developed faces with good quality.     

Growth of Ge1—xSix (x= 0 to 0.5) Single Crystals by a Zone Melting Method

Ge_1—xSi_x graded crystals with 0 < x < 0.66 were grown by a zone melting method in a double ellipsoid mirror furnace. They have a diameter of 9 mm and grown lengths between 27 and 80 mm. Single crystalline regions reached a maximum Si concentration of 50 at%, determined by EDX and ECP measurements. Starting with a Ge seed, a defined concentration profile was obtained by a wedge-shaped arrangement of the feed material. The concentration profiles could be predicted by a simulation program.     

红宝石晶体光学浮区法生长及其缺陷研究

采用光学浮区法生长了φ7 mm×70 mm的红宝石晶体.晶体的生长界面为凸界面,生长方向为<001>方向.X射线双晶摇摆曲线表明晶体具有良好的质量.研究了生长温度、旋转速率、生长速率对晶体质量的影响,确定了合理的工艺条件.通过扫描电镜、能量散射光谱仪、X射线衍射、化学腐蚀结合偏光显微镜对红宝石晶体中气泡、位错、胞状组织和溶质尾迹等缺陷进行了分析.     

Zone Melting of Bi0,5Sb1,5Te3 Crystals under Microgravity

Two samples of the thermoelectrical material Bi_0.5Sb_1.5Te₃ were grown by zone melting technique during a space flight of the russian space station “MIR” in 1994. By comparing the flight samples with the reference ground samples relevant conclusions regarding the influence of different mass transport situations in the melt on micro- and macrosegregation are possible. The samples were analyzed metallographically, by local resolved scanning of the SEEBECK-coefficient and by WDX measurements. Contrary to the ground samples the flight samples showed no convection-induced striations in the bulk. Consequently under microgravity unsteady flow in the melt has been avoided. The axial distribution of the Te component in the flight samples showed an unexpected Pfann -like behaviour, which points to a convection-controlled growth. Contrary to this the axial distribution of the metal components was diffusion-controlled. The axial macrosegregation of tellurium found in the flight samples can be explained by the high sensitivity of components with a low distribution coefficient to weakest convective flows. The radial distribution of the Te component in the flight samples is more homogeneous compared to the ground samples. The explanation of these differences succeeds only partly by the curvature of the interface and by the variation of the Te concentration boundary layer across the interface.     

布里奇曼法制备KPb2Cl5单晶

在500 ℃高真空条件下,制备了KPb2Cl5原料,对原料进行了XRD分析,表明该方法能得到纯相的KPb2Cl5.利用改进的布里奇曼法进行了生长KPb2Cl5单晶的实验,得到了直径15 mm的原晶,并测试了晶体样品的基本红外透过性能.结果显示:不镀膜的情况下,3～20 μm的中红外波段,透过率约为80;,具有很好的红外光学性能.     

ZnS晶体的化学气相沉积生长

本文报道了用化学气相沉积(CVD)法生长ZnS透明多晶体的实验结果,对生长的晶体的物理化学性能进行了测试,讨论了化学气相沉积工艺中影响ZnS晶体质量的因素.结果表明:选用固体硫作原料,用化学气相沉积方法,可以沉积出透明ZnS多晶体;它的透过性能极其优异,在6.2μm处无吸收峰,在中、长波红外透过率可达70;以上.     

Er:Lu2 O3单晶的导模法生长及性能表征

本文以高纯Lu₂O₃、Er₂O₃为原料,使用自主设计、制造的自动等径导模炉,采用导模法(EFG)生长了φ25 mm×20 mm的7.82%(原子数分数)Er:Lu₂O₃单晶,分凝系数为0.92,并探索了退火条件。X射线衍射仪(XRD)结果为纯相,X射线荧光光谱仪(XRF)结果证明杂质含量较低。利用吸收光谱计算在972 nm及1 535 nm附近的吸收截面,分别为3.24×10^-21 cm²、8.43×10^-21 cm²,半峰全宽(FWHM)分别为28.22 nm、27.31 nm。热学性能测试结果表明,在30 ℃时热导率为13.28 W·m^-1·K^-1。利用扫描电子显微镜(SEM)对晶体表面微观形貌进行了表征。     

Growth and Optical Characterization of CdI2 Single Crystals

Single crystals of CdI₂ were grown by employing the horizontal zone refining method. Emission spectra of these crystals were recorded at room temperature and liquid nitrogen temperature. Various emission parameters such as optical gain coefficient, lifetime, gain, stimulated emission cross section were evaluated for the various emission components. The results show high gain at low temperature whereas very low value at rmm temperature. This has been explained by invoking the existence of self trapped excitons in the crystal.     

坩埚下降法生长CaF2单晶的研究

采用坩埚下降法生长了CaF2单晶体,研究了不同条件生长的单晶缺陷和光谱性能.结果表明:当晶体生长过程中进入水等含氧杂质时,所生长的晶体不仅在1500nm附近产生非常宽的OH-两倍振动吸收带,而且在可见-紫外波段也形成强烈的色心吸收带.同时,杂质离子Ce3+的存在也导致晶体出现306nm的吸收带.     

单晶材料的新发展及其对生长技术的挑战

近年来,宽带隙半导体GaN、SiC、ZnO,弛豫铁电体PZNT,热电半导体β-FeSi2,超导体MgB2等功能晶体材料引起了人们的广泛关注.这些材料大多具有非常优异的性能和巨大的应用前景,但生长工业应用的体单晶非常困难.本文从晶体生长技术角度综述了这些晶体的研究进展,结合其物理化学特性探讨了单晶生长中遇到的一些关键问题.通观这些热点单晶材料的研究现状,一方面我们可以把晶体膜的制备技术看作是传统晶体生长技术的延伸,另一方面,膜技术的发展和单晶生长中存在的问题,也是对传统生长工艺的挑战.     

助熔剂坩埚下降法生长近化学计量比Co:LiNbO3晶体

以K2O为助熔剂,在较大的温度梯度(90～100℃/cm)条件下进行引种和晶体生长,应用坩埚下降法成功地生长出了初始CO2+掺杂浓度为0.5mol;的近化学计量比的铌酸锂晶体.测定了该晶体的红外光谱与吸收光谱,与同成份的LiNbO3晶体相比,其紫外吸收边向短波方向移动,OH-红外吸收峰的位置发生变化.观测到520,549,612nm三个分裂的尖吸收峰以及1400nm左右为发光中心的吸收带.从吸收特性可以判断,Co离子在铌酸锂晶体中呈现+2价.比较上部与下部晶体的吸收强度,可以推测出沿着晶体生长方向Co2+离子浓度逐渐降低,Co2+离子在晶体中有效的分凝系数大于1.     

Optical Properties of CuInSe2 Single Crystals Grown by the Vertical Bridgman Technique

The optical absorption near the fundamental edge of n-type CuInSe₂ single crystals was studied for samples having different impurity concentrations. It is found that with increasing impurity concentration the gap energy decreases whilst the tail absorption below the edge and its characteristic energy increase. It is concluded that band-gap narrowing due to high ionized impurity concentrations plays an important role in CuInSe₂ single crystals.     

Growth and Optical Properties of Doped LiTaO3 Single Crystals

Single crystals of lithium tantalate (LiTaO₃) doped with Pr, Nd + Yb and Tm were grown by the Czochralski method. A thermal system with 50 mm diameter iridium crucible and two different afterheaters (active and passive) was checked with respect to temperature distribution in a pulling region. The obtained crystals were up to 20 mm in diameter and up 50 mm in length. Crystals were poled, and the Curie temperature was determined for specimens cut of from different parts of single crystals. The polarized absorption spectra, time resolved emission spectra and emission lifetime of Pr³⁺ doped LiTaO₃ crystals were measured. An intense emission from the ³P₀ level was observed. Optical properties of the Yb³⁺ ions excited by energy transfer from Nd3+ ions have been researched for LiTaO₃:Nd, Yb crystals.     

Apparatus for Selfcontrolled Growth of Hg2Cl2 Single Crystals

The device for growth process and quality of the growing calomel (Hg₂Cl₂) single crystals studying is described. The function of the apparatus is based on the analysis of the information modulated on the poychromic light beam passed through the growing crystal. By means of this method the device determinates the temperature and the quality of the growing crystal. In the second part of this paper the special TV equipment is described. By means of that an information about the temperature and quality distribution in the whole growing crystal is obtained.