Recharging processes of Cr ions in Mg2SiO4 and Y3Al5O12 crystals under influence of annealing and γ ‐ irradiation

Recharging processes of chromium ions were investigated for Mg₂SiO₄:Mg, Cr single crystals using annealing in O₂ and in air and γ‐irradiation, as compare to YAG :Ca, Cr single crystals. The formation of tetravalent Cr ions in the Mg₂SiO₄ :Mg, Cr is related not only to the initial Cr content in the melt, oxygen partial pressure and O₂‐ vacancy existing in the crystal, but also to the external field such as γ‐irradiation. The additional absorption after γ‐irradiation shows the decrease in intensity of the absorption of Cr³⁺ and Cr⁴⁺ ions in some part of the spectrum and increase in the other giving evidence on recharging effects between Cr³⁺ and Cr⁴⁺. There arises also color centers observed between 380 nm and 570 nm that may participate in energy transfer of any excitation to Cr⁴⁺ giving rise to Cr⁴⁺ emission. Opposite to forsterite crystal, absorption spectrum of YAG:Ca, Cr crystal after γ‐irradiation reveals only increase in the absorption of the Cr bands. The observed behavior of the absorption spectrum of YAG:Ca, Cr crystal under influence of γ‐irradiation suggests that γ‐irradiation ionizes only Cr ions. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Reduction of grown-in dislocation density in Ge Czochralski-grown from the B2O3-partially-covered melt

Germanium (Ge) single crystals with an extremely low density of grown-in dislocations were grown by the Czochralski (CZ) technique with boron oxide (B₂O₃) liquid. Because attachment of particles floating on the melt surface to a growing Ge crystal leads to generation of dislocations during the growth, partial covering of the Ge melt surface with B₂O₃ liquid was attempted. Such attachment of particles was drastically suppressed or the particles were caught by the introduction of B₂O₃ liquid, and a particle-free Ge melt was realized in the central region of the melt surface. Ge single crystals were successfully grown from such melt, the grown-in dislocation density being 0–1×10³ cm⁻², which was remarkably lower than that in Ge crystals grown by a conventional CZ technique. The contaminations by B and O atoms of the grown crystal detected by SIMS analysis were very low. These Ge crystals have the potential for application to be applied as high-quality, dislocation-free substrates of GaAs solar cells for various usages including in space.     

Czochralski growth and characterization of Dy: La3Ga5.5Nb0.5O14 single crystals

Dysprosium (Dy) doped La₃Ga_5.5Nb_0.5O₁₄ single crystals were grown by the traditional Czochralski method along z‐axis. The structure of the crystal has been studied by X‐ray powder diffraction method, and the unit‐cell parameters are calculated to be a=8.22070 Å, c=5.12533 Å and V=299.965 ų. The segregation coefficient of Dy³⁺ in La₃Ga_5.5Nb_0.5O₁₄ crystal was measured by X‐ray fluorescence analysis. For 1 mol% doping level in the melt, the distribution coefficient of Dy³⁺ was determined to be 0.341 wt%. Specific heat, thermal expansion and transmission spectrum of Dy: La₃Ga_5.5Nb_0.5O₁₄ single crystals have been measured. The fluorescence spectra of Dy³⁺: La₃Ga_5.5Nb_0.5O₁₄ crystals were measured at room temperature, and there were four emission transitions occurring at 479, 576, 662 and 754 nm, respectively. The fluorescent lifetimes measurement results show 1.0% Dy: La₃Ga_5.5Nb_0.5O₁₄ possesses shorter fluorescence decay time (303.4 μs) than does 1.0%Dy:LGS (436.12 μs). (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Single‐crystal growth and characterization of mullite‐type orthorhombic Bi2M4O9 (M = Al3+, Ga3+, Fe3+)

Pure and homogeneous single crystals of orthorhombic mullite‐type Bi₂M₄O₉ (M = Al³⁺, Ga³⁺, Fe³⁺), and a mixed Bi₂Fe_1.7Ga_2.3O₉ crystal from an equimolar Ga/Fe composition were grown by the top seeded solution growth (TSSG) method. All these compounds melt incongruently in the range of about 800 and 1100 °C. In case of bismuth gallate and ferrate inclusion‐free crystals with dimensions up to several cubic centimeters can be grown. Limited solubility in Bi₂O₃ and the high steepness of the liquidus curve are the reasons for getting only small imperfect bismuth aluminate crystals. In contrast to ceramic materials preparation reported in literature, divalent calcium and strontium could not be incorporated into the mullite‐type structure during the melt growth process. Several fundamental physical properties like heat capacity, thermal expansion, heat conductivity, elastic constants, high‐pressure behavior and oxygen diffusivity were determined by different research groups using single‐crystalline samples from the as‐grown materials. Furthermore, the refractive indices of Bi₂Ga₄O₉ were measured in the range of 0.430 and 0.700 μm. Such as many other bismuth containing compounds the refractive indices of Bi₂Ga₄O₉ are larger than 2, and Bi₂Ga₄O₉ is an optic biaxial positive crystal. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of pure and Co2+‐doped Li2B4O7 single crystals

Pure and Co‐doped Li₂B₄O₇ (LBO) single crystals were grown by the Czochralski method. Starting concentrations of Co₂O₃ in the melt were: 0.5, 0.85 and 1 mol% relative to Li₂CO₃. Technological factors affecting the quality of both crystals were discussed. Optical absorption and EPR spectra were analyzed to define the oxidation states and lattice sites of cobalt ions. It was shown that Co²⁺ ions enter LBO crystal at octahedral Li⁺ site positions. Low‐temperature EPR measurements revealed that two types of Co²⁺ complexes can be distinguished in the Li₂B₄O₇:Co crystals. Additional absorption calculated for γ‐irradiated crystals showed V_k type defects suggesting the creation of cation vacancies during growth. The concentration of the defects decreases with an increase of intentional Co concentration. Introduction of cobalt ions to LBO crystal is limited probably by the formation of cobalt ion pairs or by the entrance of cobalt as Co⁺. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Temperature distribution in growing semi-transparent crystals (III). Conical liquid/solid interface

Temperature distribution in Al₂O₃ and YAG crystals grown by Czochralski method and in the melt layer adjacent to the liquid/solid interface of the conical shape was computed. The results were compared with the quality of the crystals. Using a highly absorbing material, temperature difference near the deeply submerged sharp interface decreases from the edge to the centre of a crystal and it is relatively great and unalterable in the case of a shallowly submerged blunt interface. Sharp interface show the crystals grown from the melt of the same composition (Al₂O₃ or accurately “stoichiometric” YAG), whereas the blunt one is typical of YAG grown from the melt of the “non-stoichiometric” composition, because its solidifying point is below the melting point of YAG phase.     

Effect of annealing and gamma irradiation on undoped and Eu3+-doped Y2SiO5 single crystals

The absorption spectra of the undoped Y₂SiO₅ and Eu³⁺-doped Y₂SiO₅ crystals grown by the Czochralski technique were compared before and after annealing and, similarly, the unannealed and annealed crystals after γ-ray irradiation. The absorption bands of Eu²⁺ ions with peaks at 300 and 390 nm were observed in the as-grown Y₂SiO₅:Eu³⁺ crystal. These peaks were more intense in H₂-annealed and irradiated Y₂SiO₅:Eu³⁺ crystals. The additional absorption peaks at 260 and 320-330 nm which were attributed to F color centers and O⁻ hole centers were observed in irradiated undoped Y₂SiO₅ and Y₂SiO₅:Eu³⁺ crystals, respectively.     

Investigation on the blue photorefractive properties varied with MgO codoping in Ru:Fe:LiNbO3 crystals

Mg:Ru:Fe:LiNbO₃ crystals with various doping concentration of MgO have been grown by Czochralski method. The type of charge carriers and photorefractive properties in Mg:Ru:Fe:LiNbO₃ crystals were measured by two‐wave coupling method using Kr⁺ laser (476 nm) and He‐Ne laser (633 nm) as light sources. We found that holes were the dominant charge carriers under blue light irradiation while electrons were the dominant charge carriers under red light irradiation. Mg²⁺ ions behaved no longer as damage resistant, but promoter to the photorefractive properties at 476 nm wavelength. The photorefractive properties under blue light improved with the increase concentration of Mg²⁺ ions. The enhancement mechanisms of the blue photorefractive were suggested. Experimental results definitely showed that Mg‐doped two‐centre Ru:Fe:LiNbO₃ was a promising blue photorefraction material for holographic volume storage.     

Growth of Nd:Sr3Ga2Ge4O14 crystals by a modified Bridgman method

Bridgman growth of Nd:SGG (Sr₃Ga₂Ge₄O₁₄) crystals has been investigated for the first time. Pt crucible of ∅︁25mm×250mm with a seed well of ∅︁10mm×80 mm is used, and seed is SGG crystal of ∅︁10mm×50mm grown by Bridgman method in advance. The growth parameters are optimized as the furnace temperature is set to 1450∼1500°C, temperature gradient in the crystal‐melt interface is less than 25 K/cm and growth rate is less than 0.5mm/h. The Nd:SGG crystals with 25mm in diameter and 60mm in length are grown successfully from 1.5 to 8at% Nd³⁺ doped stoichiometric Sr₃Ga₂Ge₄O₁₄ melt. The distribution coefficient and concentration of Nd³⁺ in Nd:SGG crystals are obviously higher than those of Nd:YAG crystal. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities

Oxygen-containing germanium (Ge) single crystals with low density of grown-in dislocations were grown by the Czochralski (CZ) technique from a Ge melt, both with and without a covering by boron oxide (B₂O₃) liquid. Interstitially dissolved oxygen concentrations in the crystals were determined by the absorption peak at 855 cm⁻¹ in the infrared absorption spectra at room temperature. It was found that oxygen concentration in a Ge crystal grown from melt partially or fully covered with B₂O₃ liquid was about 10¹⁶ cm⁻³ and was almost the same as that in a Ge crystal grown without B₂O₃. Oxygen concentration in a Ge crystal was enhanced to be greater than 10¹⁷ cm⁻³ by growing a crystal from a melt fully covered with B₂O₃; with the addition of germanium oxide powder, the maximum oxygen concentration achieved was 5.5×10¹⁷ cm⁻³. The effective segregation coefficients of oxygen in the present Ge crystal growth were roughly estimated to be between 1.0 and 1.4.     

Nonstoichiometric defects in YAG and YAP

Spectroscopic properties of undoped YAG and YAP grown under reducing protective atmosphere were compared. Blue (with F centre) or brown (with 0⁻ centre) varieties both of the materials were prepared in the dependence of the Al₂O₃:Y₂O₃ ratio in the melt. Colour intensity depends on the H₂O:H₂ ratio in the protective atmosphere and on the sign of electrical potential above the melt level. The coloration may be easily removed by an annealing at > 1200–1400 °C. All the irregularities of the colourations or their remowing by annealing may be attributed to the presence of impurities.     

The absorption and circular dichroism spectra of langasite family crystals doped with chromium ions

The absorption and circular dichroism spectra of langasite family crystals, La₃Ga₅SiO₁₄, La₃Ga₅GeO₁₄, Ca₃Ga₂Ge₄O₁₄, Sr₃Ga₂Ge₄O₁₄ (red), Sr₃Ga₂Ge₄O₁₄ (green), La₃Ta_0.5Ga_5.5O₁₄, and La₃Nb_0.5Ga_5.5O₁₄, which were doped with chromium ions, have been investigated in the range of 240–850 nm. It is shown that chromium ions are incorporated into the structure of the investigated crystals both in the octahedrally (Cr³⁺ ion in 1a octahedron) and tetrahedrally (Cr⁴⁺ ion in 2d tetrahedron) coordinated positions. The ion ratio Cr³⁺/Cr⁴⁺ changes in a wide range in the crystals studied.     

Improved blue photorefractive properties of near‐stoichiometric LiNbO3:Mn:Fe:Zr crystal

Near‐stoichiometric LiNbO₃ single crystal tri‐doped with ZrO₂, MnO and Fe₂O₃ was grown from Li‐riched melt by Czochralski method. The defect structures and composition of these crystals were analyzed by means of ultraviolet‐visible and infrared transmittance spectra. The appearance of 3466 cm^‐1 peak in infrared spectra showed that the crystal grown from Li‐riched melt was near stoichiometric. The photorefractive properties at the wavelength of 488 nm and 633 nm were investigated with two‐beam coupling experiment, respectively. The experimental results showed that the response speed and sensitivity were enhanced significantly and the high diffraction efficiency was obtained at 488 nm wavelength. This manifested that near‐stoichiometric LiNbO₃:Mn:Fe:Zr crystal was an excellent candidate for holographic storage. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Micro‐Pulling Down Growth of Co‐doped Lithium Niobate Single Crystal Fibers According Er and Mg Contents and Photolumenescence Properties

The Er³⁺doped Mg:LiNbO₃single crystal fibers employed in our experiment were grown in air by a micro‐pulling down (μ‐PD) method from host materials of a congruent Li/Nb (0.945) ratio which were melt‐doped with a nominal molar concentration of 1, 3, 5% MgO and 0.6% Er₂O₃. The X‐ray diffraction analysis results indicated that the co‐doped crystals main tained the same structural characteristics as the undoped LiNbO₃, however the lattice parameters with Mg differed; c (Å) value decreased, and a (Å) increased than of pure LiNbO₃. The influence of dopants on the photoluminescence (PL) properties of the Er:Mg:LiNbO₃ single crystal fibers excited by laser lines of 514 nm was reported. Also, the PL properties according to temperature and the excitation power of Er:Mg:LiNbO₃ crystal fibers were analyzed.     

Growth and scintillation properties of Pr doped Gd3(Ga,Al)5O12 single crystals

Pr:Gd₃(Ga,Al)₅O₁₂ single crystals were grown by the micro-pulling down (μ-PD) method. All grown crystals were greenish and transparent with 3.0 mm in diameter, 15–30 mm in length. Neither visible inclusions nor cracks were observed. Luminescence and scintillation properties were measured. The substitution at the Al³⁺ sites by Ga³⁺ in garnet structure has been studied. In these crystals, Pr³⁺ 5d–4f emission is observed with 340 nm wavelength. Pr1%:Gd₃Ga₃Al₂O₁₂ shows highest emission intensity. The light yield of Pr:Gd₃Ga₃Al₂O₁₂ sample with 3 mmφ×1 mm size was around 4500 photon/MeV. Scintillation decay time was 7.9 ns (0.5%), 46 ns (0.7%) and 214 ns (98.8%).     

Lattice disorder and optical absorption of PbTiO3 crystals

The electric conductivity and the optical absorption of PbTiO₃ crystals are explained by the existence of Pb³⁺ ions and free holes as electronic defects and of O^– vacancies and interstitials as ionic anti-Frenkel defects. The absorption band at 475 nm is caused by Pb³⁺ ions and produces the yellowish or brownish colour of the crystals. Using fluoridic fluxes instead of oxidic fluxes for the crystals growth a small part of O^– ions is replaced by F⁻ foreign ions. This substitution diminishes the Pb³⁺ ion content and causes an increased optical transmission of the PbTiO₃ crystals.     

Luminescence characteristics of undoped and Eu‐doped GdCa4O(BO3)3 single crystals and nanopowders

Single crystals of GdCa₄O(BO₃)₃ (GdCOB) pure and doped with Eu concentration of 1 and 4 at% were grown by the Czochralski and micropulling‐down methods. The distribution of Eu ions in GdCOB crystals was uniform. The substitutions of Eu³⁺ in Gd, Ca(1) and Ca(2) cation sites and eventually formation Eu²⁺ have been investigated. The spectroscopic properties of crystals are compared with the properties of nanopowders obtained by sol‐gel method. Radioluminescence spectra of undoped GdCOB crystal show the characteristic emission of Gd³⁺ at about 312 nm, whereas this emission dramatically decreases in Eu‐doped crystals upon X‐ray excitation, as well as in Eu‐doped nanopowders excited in vacuum ultraviolet (VUV) region. The VUV excitation in the range 125‐333 nm for Eu‐doped samples leads to strong emission in red coming from the ⁵D₀ multiplet of Eu³⁺, only. In the photoluminescence decay kinetics of 312 nm emissions substantial shortening and departure for single exponential decay in Eu‐doped samples is clearly observed. Higher Eu doping results in further acceleration of the decay. In undoped GdCOB crystal, the lifetime of the Gd^{3+ 6}P_7/2 multiplet is 2.79 ms. The Eu^{3+ 5}D₀ decay kinetics monitored at 613 nm are rather constant. Numerical fitting of fully exponential curves, reveals lifetimes 2.7 ms for nanopowder and 2.5 ms for single crystal. The results suggest that this material may be used as a red phosphor in plasma display panels in nanopowder form because of strong excitation band of Eu³⁺ luminescence in the 160‐200 nm regions. Contrary to nanopowder sample, such an excitation band, attributed to the Gd³⁺–O^2– charge transfer was not observed in crystal obtained by the micropulling‐down method. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Characterization of large‐sized Nd:YAG single crystals grown by horizontal directional solidification

Nd³⁺‐doped Y₃Al₅O₁₂ single crystals have been grown by the horizontal directional solidification (HDS) method in different thermal zone. The Grashof (G_r), Prandtl (P_r), Marangoni (M_a) and Rayleigh (R_a) numbers of melt in HDS system have been discussed for our experimental system to understand the mechanism of melt flow patterns and concentration gradient of dopant. The concentration gradient of Nd³⁺ ions was explained with melt flow processes during crystal growth in different thermal zone, and results indicated that high growth temperature will be helpful for uniformity of dopant in HDS‐grown single crystal. The main microscopic growth defects such as bubbles and irregular inclusions in HDS‐grown Nd:YAG crystals were observed, and the causes were discussed as well. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Physico-chemical processes in single crystal growing of calcium aluminates by zone melting

The growing of single crystals of calcium aluminates of compositions 12 CaO · 7 Al₂O₂, CaO · Al₂O₃, and CaO · 2 Al₂O₃ by zone melting under vacuum of 10⁻⁵ mm Hg permitted to establish that some of the Al³⁺ ions in octahedral coordination have been driven back by the moving crystallization front. Energetically, this process can be represented on the basis of the viscous flow model with the activation energy of −45 kcal/mole. The possible mathematical models have been considered for the processes of preparation of single phase crystals of the aluminates mentioned above which take account of incongruent vaporization of the component oxides and refining of the melt from structural impurities by the moving crystallization front.     

Concentration distribution of Nd3+ In Nd:Gd3Ga5O12 crystals studied by optical absorption method

Nd:Gd₃Ga₅O₁₂ crystals with different concentrations of Nd³⁺ were grown by Czochralski method, their absorption spectra were measured at room temperature. By using the optical absorption method, the effective distribution coefficient k_eff for Nd³⁺ in GGG was fitted to be 0.40±0.01, which is higher than that of Nd³⁺ in YAG. The 808nm absorption cross‐section was calculated to be 4.0±0.2×10^‐20cm^‐2. The lengthways and radial concentration distribution of Nd³⁺ in the crystals were also analyzed and discussed. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)