The dependence of surface morphology of GaSb- and AlxGa1–xSb epitaxial layers on the conditions of LPE growth

The present work shows the dependence of surface morphology of the GaSb and Al_xGa_1–xSb epitaxial layers on the conditions of LPE growth. It is found that for LPE growth at 500 °C a supersaturation of 5—10 °C and a cooling rate of 0.24—0.4°C/min for GaSb epitaxial layers and 0.8—1.2 °C/min for Al_xGa_1–xSb epitaxial layers is necessary to obtain a flat and smooth surface.     

Growth of InAs1–ySby solid solutions for obtaining decreased lattice mismatch in the InAs-GaSb (AlxGa1–nSb) system

This paper presents the results of investigation of the technological conditions of LPE growth of InAs_1–ySb_y solid solutions on InAs substrates. It is shown that the chosen regions of composition of InAs_1–ySb_y solid solutions and experimentally determined technological conditions allow the obtaining of InAs_1–ySb_y solid solutions with lattice parameter values close to those of the Al_xGa_1–xSb (0 ≦ x ≦ 0.2) solid solutions.     

Growth of Heterostructures Based on InAs–AlxGa1–xSb

It is reported on the liquid phase epitaxial (LPE) growth of heterostructures on the base of InAs–Al_xGa_1–xSb. The paper includes the investigation of epitaxial layers of Al_xGa_1–xSb alloys on InAs substrates and results of experiments for the determination of optimum growth regimes.     

Raman scattering characterization of Mn composition and strain in Ga1–x Mnx Sb/GaSb epitaxial layers

Raman scattering (RS) experiments have been performed for simultaneous determination of Mn composition and strain in Ga_1–x Mn_x Sb thin films grown on GaSb substrate by liquid phase epitaxy technique. The Raman spectra obtained from various Ga_1–x Mn_x Sb samples show only GaSb‐like phonon modes whose frequency positions are found to have Mn compositional dependence. With the combination of epilayer strain model, RS and energy dispersive x‐ray (EDX) experiments, the compositional dependence of GaSb‐like LO phonon frequency is proposed both in strained and unstrained conditions. The proposed relationships are used to evaluate Mn composition and strain from the Ga_1–x Mn_x Sb samples. The results obtained from the RS data are found to be in good agreement with those determined independently by the EDX analysis. Furthermore, the frequency positions of MnSb‐like phonon modes are suggested by reduced‐mass model. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

AlxGa1−xAs LPE growth

Al_xGa_1−xAs LPE growth was studied within the temperature range of 930–900°C with Al concentrations in solutions from 0.04 to 2.4 at.%. AlAs concentration in layers has been shown to grow with the cooling rate increase of solution. Interface and volume nucleation parameter dependence of K_i and K_v and formation time t_f on Al concentration in Ga solution have been found. Addition of Al to Ga solution increases critical values of As supersaturation (supercooling) and, as a result, increase in thickness of Al_xGa_1−xAs layers compared with GaAs layers have been determined in spite of As concentration lowering in Ga solution.     

Germanium Incorporation in Ga1–xInxAs LPE Layers and GaAs Bulk Crystals

Atomic absorption spectroscopy (AAS) is used to determine the Ge concentration in Ga_1–xIn_xAs and GaAs. The orientation dependence of Ge incorporation in (111)A-and (111)B oriented samples has been studied. The distribution coefficients for both the orientations were determined to be k_Ge^(111)A = 2.6 · 10⁻² and k_Ge^(111B = 1.4 · 10⁻² for Ga_1–xIn_xAs with 0 ≦ x ≦ 0.13. The differences between the two orientations are explained with the aid of the band bending model. Doping gradients in thick epitaxial layers and along crystal length of polycristalline TGS-grown GaAs ingots have been investigated too. In Ga_1–xIn_xAs layers any Ge concentration gradient couldn't be observed, but in TGS compact crystals Ge concentration increases with crystal length because the melt composition changes significantly during solidification. The results are compared with those of electrical measurements.     

On the ordering of Cr1-xAlx alloys (x < 0.33) leading to microprecipitations of X- and β-phases

The analysis of electron diffraction patterns of Cr_1-xAl_x alloys with 0.16 ≦ x ≦ 0.24 has been performed. The diffraction vectors describing the position of X-phase spots were corrected to the new 0.769 < 0.004 〈111〉value. The ordering model of Cr_1-xAl_x alloys with x < 0.33 is discussed in connection with physical properties. The new identification of the X-phase as Cr₄Al displacive modulation structure is proposed.     

Optical properties of Ga1–xInxAs LPE-layers and p-n structures

The multiple layer structure nGaAs(n Ga_1–xIn_xAs) p Ga_1–xIn_xAs (0 ≦ × ≦ 0.18) was realized by liquid phase epitaxy from In–Ga–As-melts on (111)-oriented GaAs substrates. The InAs-content of the mixed crystal layers was found to be dominating for crystal perfection and growth rate. The cathodoluminescence spectra of p-and n-type Ga_1–xIn_xAs and spectral distribution of the electroluminescence from pn-junctions were measured at T = 77 K and 300 K. The external quantum efficiency wa found to have a maximum for diodes with x ≈ ≈ 0.006. This is caused by the decrease of the optical absorption with increasing x and increasing dislocation density on the other hand.     

Diffusionsuntersuchungen am System Cu–Ti

As a result of diffusion studies in the binary system of Cu–Ti within a temperature range of 750°C and 850°C the intermetallic phases Ti₂Cu, TiCu, Ti₃Cu₄, Ti₂Cu₃ and Ti₂Cu₇ have been detected by means of electron microprobe analysis. Up to now according to the equilibrium diagram of Zwicker the intermetallic phase Ti₃Cu₄ was reported to be instable only. By the present investigation a time dependence of the width of the total diffusion zone as well as of each of the phases, d∼ √t, has been verified, i.e. volume diffusion is dominating. The chemical diffusion coefficients of all phases have been measured for 750°C, 800°C and 850°C. The partial diffusion coefficients for Cu and Ti in Ti₂Cu₇ for 850°C have also been determined. The chemical diffusion coefficients follow the Arrhenius law, the activation energy Q and the frequence constant D₀ could be calculated.     

Optische Eigenschaften von Wismut–Antimon-Aufdampfschichten

The change in position and in magnitude of absorption peaks due to interband transitions E_i (i = 1, 2, 3) for Bi_xSb_1–x evaporated layers have been studied for different compositions in the range 0 ≦ (1 − x) ≦ 0.30 in the visible part of the spectrum. It has been founded nonlinear shiftings for all absorption peaks in function of layer composition. The joint density of states due to transition E₂ is more sensitive as the two other transitions with modification of alloy composition.     

Interatomic Interaction in Zn3(PxAs1–x)2 Solid Solutions

Peculiarities of the interatomic interaction in the Zn₃(P_xAs_1–x)₂ (0 ≦ x ≦ 1) solid solutions are discussed in terms of the magnetic susceptibility data. It is shown that the dependence _χmol(x) has a break at x ≈︁ 0.15 which is, apparently, associated with the transition from the structures with indirect optical transitions to those with direct optical ones in the above mentioned system. In the framework of the MOLKAO model the magnetic susceptibility is divided into the Langevin diamagnetic and the Van Vleck paramagnetic components.     

The Description of the Isothermal Decomposition Processes in Al?Sc Alloys by means of Electric Resistivity Measurements and TEM Investigations

The decomposition behaviour of two AlSc alloys (c_Sc = 0.18; 0.36 at.%) after direct quench to room temperature and subsequent ageing at temperatures in the range 200 °C ≦ T_a ≦ 550 °C was investigated by means of isothermal resistivity measurements and TEM. In the temperature range 325 °C ≦ T_a ≦ 400 °C both alloys show independent of the Sc content an “inversion” of the decomposition kinetics, obviously caused by the transition of the coherent into the incoherent Al₃Sc phase.     

A First Approach to CVD Si1–xGex Layer Growth by Means of Chemical Reaction Kinetics

A reaction mechanism will be suggested for interpreting Si_1–xGe_x CVD layer deposition from a silicon source and germane reaction gas mixtures in order to explain the observed silicon layer growth increase in consequence of the presence of germane. A successive substitution of the hydrogen atoms available in germane molecules by silyl groups forming a silicon containing intermediate of germane will be assumed. It will further be supposed that both the original silicon source and the germane intermediates will independently be decomposed by chemical reactions leading to Si_1–xGe_x CVD layer deposition from dichlorosilane-germane-hydrogen reaction gas mixtures at temperatures in the range of 600 ≦ T(°C) ≦ 900 as recently published by KAMINS and MEYER .     

Investigation of InxGa1−xAs films grown from thin solution layer

In_xGa_1−xAs films with x⩽0.12 were grown from a thin solution layer between substrates. The calculation of final film thickness as a function of liquid phase composition, based on supposition of film deposition only on the substrate, is in a good agreement with experimental results. The dependences between compositions of liquid and solid phases at 800°, 750° and 700°C were determined. The morphology of the film surface was investigated as a function of liquid phase composition and (100), (111) A, (111) B substrate orientations. Dislocation density increases from 10⁴ cm⁻² to 10⁷ cm⁻² with change of x from 0 to 0.12.     

On the (MgxNi1–x)SeO4 · 6 H2O and (MgxCu1–x)SeO4 · 5 H2O mixed crystal formation

Mixed crystals (Mg_xNi_1–x)SeO₄ · 6 H₂O and (Mg_xCu_1–x)SeO₄ · 5 H₂O have been prepared studying the solubility in the MgSeO₄–NiSeO₄–H₂O and MgSeO₄–CuSeO₄–H_2O systems at 25 °C. It has been shown that the monoclinic structure of MgSeO₄ · 6 H₂O is unstable and undergoes a change into tetragonal structure due to the included nickel ions (about 4 at %). The lattice parameters of (Mg_{xNi 1–x})SeO₄ 6 H₂O have been calculated. It has been established that the magnesium ions incorporate isodimorphously in the crystal structure of CuSeO₄ · 5 H₂O which could be an indication of the existence of MgSeO₄ · 5 H₂O isostructural with the triclinic CuSeO₄ 5 H₂O. The distribution coefficients of the salt components between the liquid and solid phases have been calculated.     

Zur Realstruktur von Ga1–xInxAs LPE-Schichten

Ga_1–xIn_xAs epitaxial layers (0.02 ≦ × ≦ 0.12) are grown on (111)-oriented GaAs substrates from nonstoichiometric melts. The etch pit densities – determined by chemical etching – yield values between 2 · 10⁵ cm⁻² and 3 · 10⁷ cm⁻² and were found to be dependent on composition, layer thickness and cooling rate. X-ray topography of cleaved {110}-planes gives information on layer quality and indicates the existence of stress in the substrate lattice near the heterojunction. The validity of Vegard's law in the investigated concentration range was confirmed by X-ray determination of the lattice constants. The half width of double crystal spectrometer rocking-curves, the epd and the relative intensity of photoluminescence show similar dependence on the composition of the mixed crystal layers.     

Zum Wachstum von AIIIBV-Halbleitern aus nichtstöchiometrischen Schmelzen (II) Dotierung von GaAs und Ga1−xAlxAs mit Zink

Doping of GaAs and Ga_1−xAl_xAs with Zn in the LPE process was studied by a radioanalytical method. It is found that Zn diffuses from the Ga-(Al)-As-Zn-solution into the n-GaAs substrate before epitaxial growth starts. This “pre-diffusion” and the following diffusion of Zn out of the epitaxial layer into the substrate results in three regions with distinct Zn-graduation in the vicinity of the pn-junction. There are no striking differences for GaAs/GaAs and Ga_1−xAl_xAs/GaAs structures. The Zn concentration in GaAs epitaxial layers decreases exponentially from the substrate up to the layer surface. From this profile the temperature dependence of the Zn segregation coefficient is calculated. At 900°C a value k_eff = 5,2 · 10⁻² is found. The doping profile in Ga_1−xAl/As layers is more complex. It is influenced by the changings of temperature during the growth of the layer and by the nonuniform Aldistribution over the layer thickness.     

Magnetic phase transitions in the Mn1-xCrxSe (x ≦ 0.4) system

Neutron diffraction and magnetic investigations have been made on the Mn_1-xCr_xSe (0 ≦ x ≦ 0.4) system solid solutions. Evidence is found of the appearance of magnetization in the samples with composition 0.05 ≦ x ≦ 0.4, exceeding in value that of antiferromagnet. The temperatures of magnetic transition, obtained from the magnetic measurements, do not fit the temperatures of disappearance of antiferromagnetic ordering obtained from the neutron diffraction studies. The antiferromagnetic structure with compositions 0.03 ≦ x ≦ 0.3 is analogous to the α-MnSe structure. The results are discussed under assumption of simultaneous coexistence of phases with different type of magnetic ordering.     

Calculation of phase diagrams in AlxIn1−xAs/InP,AsxSb1−xAl/InP and AlxIn1−xSb/InSb nano-film systems

The models for calculation of phase diagrams of semiconductor thin films with different substrates were proposed by considering the contributions of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. The phase diagrams of the Al_xIn_1−xAs and As_xSb_1−xAl thin films grown on the InP (1 0 0) substrate, and the Al_xIn_1−xSb thin films grown on the InSb (1 0 0) substrate at various thicknesses were calculated. The calculated results indicate that when the thickness of film is less than 1 μm, the strain-induced zinc-blende phase appears, the region of this phase extends with decreasing of the layer thickness, and there is small effect of surface energies of liquid and solid phases on the phase diagrams.