Far Infrared and Raman Optical Study of CdInGaS4, CdIn2S4, HgInGaS4 and CdIn2S2Se2 Crystals

Raman and infrared reflectivity spectra of CdInGaS₄, CdIn₂G₄, HgInGaS₄, and CdIn₂S₂Se₂ crystals have been investigated. The fiindamental phonon parameters, the limiting dielectric constants ϵ₀ and ϵ∞ and the reflectivity spectrum contours have been calculated using classical dispersion relations.     

Luminescence and Photoconductivity Caused by Antisite Defects in CdIn2S4 Single Crystals

Results of a study of the influence of nonstoichiometry as well as of annealing and argon ion implantation on photoluminescence and photoconductivity spectra of cadmium thioindate single crystals are presented. The energy positions of levels of antisite In_cd and Cd_In defects are found. The role of antisite defects in the process of conductivity compensation is analysed.     

Vibrational and Polariton Spectra of CdGa2S4 and CdAl2S4 Crystals

In this work the vibrational and polariton optical spectra of the CdGa₂S₄ and CdAl₂S₄ crystals grown from vapor phase and by the Bridgman method have been investigated. The light scattering by polaritons excited of various wavelength of Ar⁺ and He‐Ne lasers is studied.     

Electrical and infrared optical properties of CdIn2S4 single crystals grown by chemical transport

Single crystals of CdIn₂S₄ were grown by chemical transport with iodine as transporting agent using different transporter concentrations and temperature gradients. It is found that the electron concentration increases with increasing transporter concentration and decreases after annealing in a sulphur atmosphere. Infrared reflectivity and absorption spectra are measured at room temperature in the wavenumber range from 180 to 4000 cm⁻¹ in order to determine the optical mode parameters of the compound and to evaluate the scattering mechanism of the electrons from the free carrier absorption. Lattice scattering is found to be predominant at room temperature for electron concentrations below about 4 · 10¹⁷ cm⁻³.     

Growth and Characterization of CdAl2S4 and CdAl2Se4 Single Crystals

Single crystals of CdAl₂S₄ and CdAl₂Se₄ showing high transparency were grown by the chemical vapour transport method. Their composition was proven by microprobe analysis. Structural investigations were done by Rietveld refinements and are in good agreement with known structure data. From transmittance and reflectance measurements the energy of the band gap WBS estimated. Assuming a direct nature of the corresponding optical transition the following values were obtained: E_g = 3.82 eV (RT), E_g = 3.94 eV (85 K) for CdAl₂S₄ and E_g = 2.95 eV (RT), E_g = 3.07 eV (85 K) for CdAl₂Se₄ respectively.     

The IR Television Scanning Technique as Temperature Field Control for Growing Silicon Crystals

Outgoing from the idea that the temperature field of the growing crystal is the most general as well as characteristic representation of all technological parameters and equipment conditions the ir-television scanning technique was as a method for recording and controlling of temperature distributions at the surface of growing crystals and melts. Using a number of electronic treshold value switches, some video signal amplitude levels can be made visible at the monitor, giving an overlook on the isotherm distribution at the crystal surface. Records of such observations are helpful for reproduction and optimization of crystal growth technologies. For Silicon crystal growth, the process control by ir-television scanning technique is a fast, convenient, and nondisturbing one giving important informations.     

Development of Methods for Growing LiIO3 and Ba(NO3)2 Crystals as Materials for Laser Frequency Converters

Crystallography Reports - New methods for growing LiIO3 and Ba(NO3)2 crystals have been developed. Barium nitrate crystals up to 12 × 12 × 100 mm3 in size and lithium iodate crystals up...     

Growth of CuInS2 single crystals from Sb2S3 and Bi2S3 solutions

The phase diagrams of the CuInS₂‐Sb₂S₃ and CuInS₂‐Bi₂S₃ systems were investigated using X‐ray powder diffraction and differential thermal analysis. Based on these results, the compositions for the growth of the CuInS₂ single crystals from CuInS₂‐Sb₂S₃ and CuInS₂‐Bi₂S₃ melts were selected and Bridgman crystal growth process was performed. The investigation of the obtained single crystals using X‐ray powder diffraction and optical absorption spectra indicates that the incorporation of the solvent atoms into the crystal lattice is absent. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

我国人工晶体生长设备的回顾与展望

本文回顾了我国人工晶体生长设备的发展历史,展望了人工晶体生长设备的发展前景.     

热丝化学气相法生长单晶金刚石颗粒的衬底温度场仿真及实验研究

本文使用金刚石磨料作为晶种颗粒,通过热丝化学气相法生长出单晶金刚石颗粒,并且建立三维的有限元模型,利用有限元仿真分析了生长过程中影响金刚石磨料生长速率以及沉积质量的各种因素,如热丝的排列方式,衬底的温度场,以及晶种的分布方式.通过固定在热丝CVD反应腔里的热电偶测量了实际的衬底温度分布,从而验证了仿真结果的正确性.另外,通过改变仿真模型优化了沉积单晶金刚石颗粒的工艺参数,获得适应于合成单晶金刚石颗粒的新技术,为化学气相沉积合成单晶金刚石颗粒奠定了基础,也为高温高压金刚石磨料品级的改进与提高提供了新途径.     

Temperature Dependence of Static Electrical Conductivity of Li2B4O7 Crystals

Crystallography Reports - The static dc electrical conductivity of one-dimensional ion conductor Li2B4O7 (sp. gr. I41cd) has been investigated in the temperature range of 293–820 K using...     

Temperature profile and homogeneity of the growth rate of CVD Silicon from SiH4-HCl-H2 mixtures

With the aid of the methods of the statistical design of experiments for each wafer site (x) on the graphite susceptor an empiric polynomial was obtained for CVD epitaxial silicon from SiH₄–HCl–H₂ mixtures, linking the growth rate v_epi to the process parameters p⁰, p⁰_HCl, and T(x). By means of the statistical model optimum temperatur characteristics along the susceptor were selected and discussed for specific deposition conditions.     

Application of a Novel Technique for Growing BTO and KTN Crystals

The three thermal zone solute transport flux method is introduced for the first time. Application of this technique for the growth of BaTiO₃ (BTO) and KTa_1-xNb_xO₃ (KTN) is satisfactory.     

The Temperature Study of the Elastooptic Properties of SrLaAlO4 and SrLaGaO4 Crystals by Brillouin Light Scattering

The temperature study of the elastooptic properties of SrLaAlO₄ (SLA) and SrLaGaO₄ (SLG) crystals has been reported. The results obtained are discussed in terms of the nature of the oxygen point defects, which might be created in the crystals during the growth process.     

Electron Microscopy and X-ray Study of the Growth of FeCr2S4 Spinel Single Crystals by Chemical Vapour Transport

The growth features of FeCr₂S₄ spinel single crystals prepared by chemical vapour transport were studied by means of scanning electron microscopy, transmission electron microscopy, high resolution electron microscopy, electron diffraction and X-ray analysis. Our results indicate that the epitaxial growth of the new phases FeCr₇S₁₂ and FeCr₈S₁₂, both based on the NiAs structure, can essentially inhibit the growth of large FeCr₂S₄ spinel single crystals in the octahedral habit. The new phases are fully characterised and the effects of defect ordering in these new phases are also reported.     

NaCo2O4晶体的生长,形貌和生长机理研究（英文）

采用自发成核方法,以NaCl-Na2CO3为助熔剂,生长了毫米级的NaCo2O4晶体。通过X射线衍射对晶体作了表征。利用扫描电子显微镜和原子力显微镜研究了晶体的形貌和生长机理。结果表明:所得晶体是NaCo2O4,属于六方晶系,晶胞参数:a=b=0.2842 nm,c=1.0894 nm,V=0.0761997 nm3。NaCo2O4晶体是沿c轴层状生长的,同时从阴离子配位多面体的角度分析了晶体的形貌。     

Growth Rate anisotropy of the K2(S,Cr)O4 Mixed Crystals Grown from Aqueous Solution

The ratio of growth rates of the K₂(S,Cr)O₄ crystals in the [100] and [001] directions (the anisometry coefficient) is proportional to the initial effective supersaturation of the solutions from which the crystals were grown. The values of the factors of asymmetry and excess of distribution of the crystal anisometry coefficient are affected by the composition of solution. The change in the values of these factors is caused by the change in the value of the initial supersaturation of solution according to the specific features of the solubility diagram.     

The Influence of High Temperature Predeformation on Ductility of LiF and BaF2 Single Crystals

The effect of high temperature predeformation on deformation characteristics of ductile LiF and brittle BaF₂ crystals was investigated. The same predeformation, as has been shown previously, leads to the increasing of the limited plastic deformation of MgO crystals by one order of magnitude. It was found that in both investigated crystals, as in the case of MgO crystals, at the test temperature T₂ ≅ 0.1 T_m limited plastic deformation before fracture obviously increases if the specimen was prestrained up to ε_p ≦ 1% at T₁ = 0.5 T_m. This increase is as higher as the plasticity of crystal is lower. In BaF₂ crystals it reaches a factor of 20 and more. The effect is connected with the creation of mobile dislocations during the high temperature predeformation and dislocaton sources for subsequent deformation at lower temperatures and with the homogeneity of the process of plastic deformation. These conditions prevent the appearance of dangerous places in which the fracture can begin.