脉冲激光气相沉积法制备钴纳米薄膜实验研究

采用脉冲激光沉积技术制备了钴纳米薄膜,分析和讨论了不同背景气压和脉冲频率对钴纳米薄膜表面形貌的影响及纳米微粒的形成机理。实验结果表明：在低背景气压下,等离子体羽辉自身粒子之间的碰撞占主导作用,容易形成液滴;在较高背景气压下,等离子体羽辉边缘粒子和背景气体粒子之间的碰撞占主导作用,容易形成小岛并凝聚成微颗粒;在4Hz的脉冲重复频率和5Pa背景气压下生长出单分散性良好的钴纳米颗粒。     

脉冲激光气相沉积法制备的非晶CH薄膜特性分析

采用脉冲激光气相沉积(PLD)法,研究了氢气压强对非晶CH薄膜性能的影响。原子力显微镜图和白光干涉图显示,薄膜表面平整致密,随着氢气压强增大,粗糙度变大。拉曼光谱分析表明,氢气压强增加,G峰和D峰位置都在向高波数方向移动。傅里叶变换红外光谱分析显示,薄膜中存在sp3—CH2和sp2—CH等基团。最后,采用PLD漂浮法在最优参数氢气压强为0.3 Pa下,成功制备了不同厚度(100~300 nm)、满足一定力学强度、无明显宏观缺陷的自支撑CH薄膜。     

脉冲激光气相沉积法制备的非晶CH薄膜特性分析

采用脉冲激光气相沉积(PLD)法,研究了氢气压强对非晶CH薄膜性能的影响。原子力显微镜图和白光干涉图显示,薄膜表面平整致密,随着氢气压强增大,粗糙度变大。拉曼光谱分析表明,氢气压强增加,G峰和D峰位置都在向高波数方向移动。傅里叶变换红外光谱分析显示,薄膜中存在sp3—CH2和sp2—CH等基团。最后,采用PLD漂浮法在最优参数氢气压强为0.3 Pa下,成功制备了不同厚度（100~300 nm）、满足一定力学强度、无明显宏观缺陷的自支撑CH薄膜。     

脉冲激光气相沉积技术及其在ICF薄膜靶制备中的应用

在ICF实验及天体物理的辐射不透明实验中,经常用到多层薄膜靶,激光脉冲气相沉积（PLD）技术是制备多层薄膜靶的较好方法。论述了PLD技术的原理、实验方法和装置的设计,用该方法初步制备了原子级光滑的Cu及Cu/ Fe薄膜。Cu薄膜的均方根粗糙度为0.2nm,Fe薄膜的均方根粗糙度为0.4nm。     

利用脉冲激光沉积法制备高Mg掺杂的六方相MgZnO薄膜

选用Mg0.2Zn0.8O陶瓷靶,利用脉冲激光沉积(PLD)法,在单晶Si(100)和石英衬底上生长了一系列MgZnO薄膜(MZO)。通过X射线衍射(XRD)、扫描电子显微镜(SEM)、X射线能谱(EDS)和紫外可见光透射光谱(UV-Vis)等实验手段,研究了在不同工作压强下生长的薄膜样品的晶体结构、微观形貌和光学性能的变化。结果表明:所有的薄膜样品都是单一的ZnO六方相,禁带宽度随生长压强的升高而增加,变化范围在3.83～4.05eV之间,最短吸收边接近300nm。     

脉冲激光沉积原位生长MgB2薄膜的研究

文章介绍了我们利用脉冲激光沉积（PLD）方法原位生长MgB2超导薄膜的工作．实验采用两步法的方案：高真空条件下在Al2O3（001）衬底上沉积Mg-B混合物加覆盖Mg层的双层结构，然后将该前驱体在630℃左右的Ar气氛中原位退火。成功制备出了有较好重复性的MgB2超导薄膜，其最高的起始转变温度为36．5K。转变宽度在1K左右．我们认为该方法为进一步研究基于MgB2的多层结构器件提供了一种可行的发展思路．     

脉冲激光沉积PMN-PT薄膜及其性能研究

以较低温度烧结获得的PMN-PT块材料为靶,采用脉冲激光沉积方法在石英衬底上制备了PMN-PT薄膜,研究了后续退火处理对PMN-PT薄膜的结构及光学特性的影响.结果显示,采用脉冲激光沉积可获得质量较好的钙钛矿结构的PMN-PT薄膜,优化的后续退火温度大约在550℃～750℃之间.     

NaF薄膜的脉冲激光沉积法制备与结构研究

采用脉冲激光沉积(PLD)方法在Si(100)衬底上制备了NaF薄膜。在激光重复频率2 Hz,能量密度3 J/cm2,本底真空度5×10-5 Pa的条件下,研究衬底温度对薄膜沉积速率及结构的影响。台阶仪分析表明：薄膜的沉积速率随衬底温度增加呈指数函数增加,算出NaF薄膜的反应激活能为48.67 kJ/mol。原子力显微镜分析表明：薄膜致密而光滑,均方根粗糙度为0.553 nm。扫描电镜截面微观形貌分析表明：薄膜呈现柱状结构。X射线衍射分析表明：NaF薄膜为面心立方晶体结构,并具有显著的择优取向;当衬底温度约为400 ℃时,平均晶粒尺寸最大(129.6 nm),晶格微应变最小(0.225%)。     

NaF薄膜的脉冲激光沉积法制备与结构研究

 采用脉冲激光沉积(PLD)方法在Si(100)衬底上制备了NaF薄膜。在激光重复频率2 Hz,能量密度3 J/cm²,本底真空度5×10^-5 Pa的条件下,研究衬底温度对薄膜沉积速率及结构的影响。台阶仪分析表明：薄膜的沉积速率随衬底温度增加呈指数函数增加,算出NaF薄膜的反应激活能为48.67 kJ/mol。原子力显微镜分析表明：薄膜致密而光滑,均方根粗糙度为0.553 nm。扫描电镜截面微观形貌分析表明：薄膜呈现柱状结构。X射线衍射分析表明：NaF薄膜为面心立方晶体结构,并具有显著的择优取向;当衬底温度约为400 ℃时,平均晶粒尺寸最大(129.6 nm),晶格微应变最小(0.225%)。     

Fabrication of p-type Li-doped ZnO films by pulsed laser deposition

p-Type ZnO thin films have been realized via doping Li as acceptor by using pulsed laser deposition. In our experiment, Li₂CO₃ was used as Li precursor, and the growth temperature was varied from 400 to 600 °C in pure O₂ ambient. The Li-doped ZnO film prepared at 450 °C possessed the lowest resistivity of 34 Ω cm with a Hall mobility of 0.134 cm² V⁻¹ s⁻¹ and hole concentration of 1.37 × 10¹⁸ cm⁻³. X-ray diffraction (XRD) measurements showed that the Li-doped ZnO films grown at different substrate temperatures were of completely (0 0 2)-preferred orientation.     

Biocompatible film deposition by using Nd:YAG pulsed laser

A Nd:YAG laser operating at the fundamental wavelength (1064 nm) and at the second harmonic (532 nm), with 9 ns pulse duration, 100–900 mJ pulse energy, and 30 Hz repetition rate mode, was employed to ablate in vacuum (10^?6 mbar) biomaterial targets and to deposit thin films on substrate backings. Titanium target was ablated at the fundamental frequency and deposited on near-Si substrates. The ablation yield increases with the laser fluence and at 40 J/cm ² the ablation yield for titanium is 1.2×10¹⁶ atoms/pulse. Thin film of titanium was deposited on silicon substrates placed at different distance and angles with respect to the target and analysed with different surface techniques (optical microscopy, scanning electron spectrosopy (SEM), and surface profile).

Hydroxyapatite (HA) target was ablated to the second harmonic and thin films were deposited on Ti and Si substrates. The ablation yield at a laser fluence of 10 J/cm ² is about 5×10¹⁴ HA molecules/pulse. Thin film of HA, deposited on silicon substrates placed at different distance and angles with respect to the target, was analysed with different surface techniques (optical microscopy, SEM, and Raman spectroscopy).

Metallic films show high uniformity and absence of grains, whereas the bio-ceramic film shows a large grain size distribution. Both films found special application in the field of biomaterial coverage.     

Characterization of polymer thin films obtained by pulsed laser deposition

The development of laser techniques for the deposition of polymer and biomaterial thin films on solid surfaces in a controlled manner has attracted great attention during the last few years. Here we report the deposition of thin polymer films, namely Polyepichlorhydrin by pulsed laser deposition. Polyepichlorhydrin polymer was deposited on flat substrate (i.e. silicon) using an NdYAG laser (266 nm, 5 ns pulse duration and 10 Hz repetition rate).The obtained thin films have been characterized by atomic force microscopy, scanning electron microscopy, Fourier transform infrared spectroscopy and spectroscopic ellipsometry.It was found that for laser fluences up to 1.5 J/cm² the chemical structure of the deposited polyepichlorhydrin polymer thin layers resembles to the native polymer, whilst by increasing the laser fluence above 1.5 J/cm² the polyepichlorohydrin films present deviations from the bulk polymer.Morphological investigations (atomic force microscopy and scanning electron microscopy) reveal continuous polyepichlorhydrin thin films for a relatively narrow range of fluences (1-1.5 J/cm²).The wavelength dependence of the refractive index and extinction coefficient was determined by ellipsometry studies which lead to new insights about the material.The obtained results indicate that pulsed laser deposition method is potentially useful for the fabrication of polymer thin films to be used in applications including electronics, microsensor or bioengineering industries.     

High temperature growth of InN on various substrates by plasma-assisted pulsed laser deposition

InN has attracted much attention due to its optical and electrical properties that make it suitable for the fabrication of infrared optical devices and high-speed electronic devices. In this work we report on the structural properties and morphology of InN thin films grown on different substrates by radiofrequency plasma beam assisted pulsed laser deposition. Sapphire and silicon substrates were considered for the growth of these films. The influence of substrate type and growth parameters on the morphology and structural properties of the resulting InN thin films is discussed. The structural analysis of the samples was performed by means of X-ray diffraction. The morphology of the thin films was investigated through atomic force microscopy. Although growth of InN from a metallic In target using nitrogen radiofrequency plasma assisted pulsed laser deposition was achieved for all the samples, growth conditions were found to play an important role on the crystal quality of the resulting thin films.     

Structural characterization of AlN films synthesized by pulsed laser deposition

We obtained AlN thin films by pulsed laser deposition (PLD) from a polycrystalline AlN target using a pulsed KrF* excimer laser source (248 nm, 25 ns, intensity of ∼4 × 10⁸ W/cm², repetition rate 3 Hz, 10 J/cm² laser fluence). The target-Si substrate distance was 5 cm. Films were grown either in vacuum (10⁻⁴ Pa residual pressure) or in nitrogen at a dynamic pressure of 0.1 and 10 Pa, using a total of 20,000 subsequent pulses. The films structure was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and spectral ellipsometry (SE). Our TEM and XRD studies showed a strong dependence of the film structure on the nitrogen content in the ambient gas. The films deposited in vacuum exhibited a high quality polycrystalline structure with a hexagonal phase. The crystallite growth proceeds along the c-axis, perpendicular to the substrate surface, resulting in a columnar and strongly textured structure. The films grown at low nitrogen pressure (0.1 Pa) were amorphous as seen by TEM and XRD, but SE data analysis revealed ∼1.7 vol.% crystallites embedded in the amorphous AlN matrix. Increasing the nitrogen pressure to 10 Pa promotes the formation of cubic (≤10 nm) crystallites as seen by TEM but their density was still low to be detected by XRD. SE data analysis confirmed the results obtained from the TEM and XRD observations.     

Role of vanadium content in ZnO thin films grown by pulsed laser deposition

Vanadium-doped ZnO films (Zn_1−xV_xO, where x = 0.02, 0.03, 0.05 and 0.07), were formed from ceramic targets on c-cut sapphire substrates using pulsed laser deposition at substrate temperature of 600 °C and oxygen pressure of 10 Pa. In order to clarify how the vanadium concentration influences the films’ properties, structural and magnetic investigations were performed. All films crystallised in wurtzite phase and presented a c-axis preferred orientation at low concentrations of vanadium. The results implied that the doping concentration and crystalline microstructure influence strongly the system's magnetic characteristics. Weak ferromagnetism was registered for the film with the lowest doping concentration (2 at.%), which exhibited a ferromagnetic behavior at Curie temperature higher than 300 K. Increasing the vanadium content in the film caused degradation of the magnetic ordering.     

Enhancement of coercivity with reduced grain size in CoCrPt film grown by pulsed laser deposition

We report a pulsed laser deposition (PLD) growth of VMn/CoCrPt bilayer with a magnetic coercivity (H_c) of 2.2 kOe and a grain size of 12 nm. The effects of VMn underlayer on magnetic properties of CoCrPt layer were studied. The coercivity, H_c, and squareness, S, of VMn/CoCrPt bilayer, is dependent on the thickness of VMn. The grain size of the CoCrPt film can also be modified by laser parameters. High laser fluence used for CoCrPt deposition produces a smaller grain size. Enhanced H_c and reduced grain size in VMn/CoCrPt is explained by more pronounced surface phase segregation during deposition at high laser fluence.     

Effects of deposition temperature on the structural and morphological properties of thin ZnO films fabricated by pulsed laser deposition

ZnO thin films were grown on Si(1 0 0) substrates using pulsed laser deposition in O₂ gas ambient (10 Pa) and at different substrate temperatures (25, 150, 300 and 400 °C). The influence of the substrate temperature on the structural and morphological properties of the films was investigated using XRD, AFM and SEM. At substrate temperature of T=150 °C, a good quality ZnO film was fabricated that exhibits an average grain size of 15.1 nm with an average RMS roughness of 3.4 nm. The refractive index and the thickness of the thin films determined by the ellipsometry data are also presented and discussed.     

On the optical properties of amorphous Ge-Ga-Se-KBr films prepared by pulsed laser deposition

Amorphous thin films (1 − x)(4GeSe₂-Ga₂Se₃)-xKBr (x = 0, 0.1, 0.2, 0.3) were prepared by the pulsed laser deposition (PLD) technique. The optical parameters were calculated using the Swanepoel method from the optical transmission spectra. The optical band gap () of the studied films increased while the index of refraction decreased when increased the content of KBr. The Tauc slopes were discussed as an indicator of the degree of structural randomness of amorphous semiconductors. The index of refraction decreased and increased after annealing of as-deposited films below the glass transition temperature. The thermal-bleaching and thermal- contraction effects were observed, which are discussed in relation to the reduction in the density of homopolar bonds confirmed by the Raman spectra analysis and the decreased amount of fragments of the as-deposited films, respectively.