Antiferromagnetic spin glass in doped Ge near insulator-metal transition

A low-temperature (3–100 K) electron spin resonance (ESR) study of the spin system of neutral As donors in Ge showed that on the insulator side of the insulator-metal transition the single-spin density exponentially disappears as T → 0. Such spins are bound into pairs to give an antiferromagnetic (AF) phase. Upon increasing the temperature the AF phase is destroyed, the single-spin density and, as a result, the ESR absorption signal becomes stronger. The temperature dependences of the densities of the pairs and single spins are typical for a chaotic distribution of neutral donors. In this case, there is no Néel temperature. For a low degree of compensation, the crystal lattice of Ge with the AF phase is actually a nanostructured system characterized by anisotropic internal stresses that are the strongest along one of the [110] directions. These stresses give rise to the anisotropy of the g-factor which is responsible for experimentally observed splitting of the ESR line. The compensating impurities destroy the AF phase and reduce this splitting. Local stresses are present in this case, too, but now they appear because of the Coulomb interaction of oppositely charged impurities and have no preferred orientation.     

Spectral line shapes modeling in turbulent plasmas

In this work we investigate the influence of low frequency turbulence on Doppler spectral line shapes in magnetized plasmas. Low frequency refers here to fluctuations whose typical time scale is much larger than those characterizing the atomic processes, such as radiative decay, collisions and charge exchange. This ordering is in particular relevant for drift wave turbulence, ubiquitous in edge plasmas of fusion devices. Turbulent fluctuations are found to affect line shapes through both the spatial and time averages introduced by the measurement process. The profile is expressed in terms of the fluid fields describing the plasma. Assuming the spectrometer acquisition time to be much larger than the turbulent time scale, an ordering generally fulfilled in experiments, allows to develop a statistical formalism. We proceed by successively investigating the effects of density, fluid velocity and temperature fluctuations on the Doppler profile of a spectral line emitted by a charge exchange population of neutrals. Line shapes, and especially line wings are found to be affected by ion temperature or fluid velocity fluctuations, and can in some cases exhibit a power-law behavior. These effects are shown to be measurable with existing techniques, and their interpretation in each particular case would rely on already existing tools. From a fundamental point of view, this study gives some insights in the appearance of non-Boltzmann statistics, such as Lévy statistics, when dealing with averaged experimental data.     

发射光谱法对早期激光诱导铝合金等离子体诊断研究

对激光诱导等离子体参数进行诊断有多种方法,其中采用发射光谱法对其诊断是一种重要的方法。文中采用Nd∶YAG固态激光器,输出波长1 064 nm红外激光与铝合金样品相互作用,深入研究了铝合金等离子体产生早期(<1 μs)谱线轮廓、谱线强度、线背比、谱线半峰宽及位移等随时间演变规律。研究表明,激光与物质相互作用早期,电子数密度非常大,电子与离子及原子之间的相互作用非常强烈,谱线的Stark展宽效应非常明显,导致多重谱线重叠在一起,随时间演变,电子数密度及电子温度的降低,多重谱线的半峰宽越来越窄且谱线轮廓对称性越来越好。MgⅠ285.212 6 nm谱线强度早期逐渐增强,大约100 ns左右谱线强度达到最大值,然后谱线强度呈逐渐减小的趋势,这是由于等离子体产生早期,电子及离子占主导地位,故早期原子谱线强度较弱,随时间演变,电子与离子之间的复合,原子数密度逐渐增加,故原子谱线逐渐增强,达到最大值之后,由于等离子体激发温度的降低,故谱线强度逐渐减弱。以NIST波长位置为参考,等离子体产生的早期谱线发生了红移,连续背景强度随时间演变呈幂函数形式急剧递减,与之相反,谱线的连续背景强度与谱线强度相比,连续背景衰减的速度更为迅速,故导致谱线信背比随时间演变呈增大趋势,本研究对等离子体早期这些现象从理论角度进行了深入探讨。     

温度和压强的变化对谱线线型峰值的影响

谱线线型是用于气体浓度测量中的一个重要参数。本文基于温度(压强)变化会引起相应压强(温度)的变化这一点,考虑温度和压强同时变化对气体线型峰值的影响。通过分析氟化氢的吸收谱线,发现可用Lorentzian线型来计算峰值吸收系数的温度和压强范围都扩大,而Gaussian线型在绝大数情况下不能用来计算峰值吸收系数;在一定的温度范围和压强范围内,如果只考虑压强或温度的变化,由此计算的三种线型峰值(Gaussian,Lorentzian和Voigt)的相对误差大于0.1。因此,在计算线型峰值时,需考虑压强和温度同时变化对线型峰值的影响。最后分别讨论了甲烷、二氧化碳、一氧化碳及一氧化氮,得到与氟化氢结论相似的结论,结论的不完全相同是由于每种气体在波数、压力展宽系数、相对分子质量及温度系数上的不同而导致。     

Theory of charged impurity scattering in two-dimensional graphene

We review the physics of charged impurities in the vicinity of graphene. The long-range nature of Coulomb impurities affects both the nature of the ground state density profile and graphene’s transport properties. We discuss the screening of a single Coulomb impurity and the ensemble averaged density profile of graphene in the presence of many randomly distributed impurities. Finally, we discuss graphene’s transport properties due to scattering off charged impurities both at low and high carrier density.     

Intensities of the line and photoionization spectra of shallow nonhydrogenlike impurities in semiconductors

Numerical nonvariational methods are proposed for the calculation of energies and wave functions of bound states, ground state wave functions with the account of central cell corrections, and the orthonormalized wave functions of the continuous spectrum of nonhydrogenlike shallow impurities in semiconductors. A number of different spectral characteristics is calculated for donor impurities in Ge and Si and for acceptor impurities in Ge and GaAs. The theory of photofield ionization i.e. tunnel ionization of an optically excited impurity atom is presented for shallow donors with the account of the effective mass anisotropy. The possibility of the observation of the line spectrum (due to transitions to shallow Coulomb excited levels) of a deep impurity in the presence of a high magnetic field is shown.     

土壤中砷元素的激光诱导击穿光谱测量分析

利用Nd:YAG脉冲激光器作为光源,在实验室自然大气环境下诱导产生国家标准土壤的激光等离子体,选取砷的228.8nm特征谱线作为分析线,测量并分析了砷元素的激光诱导击穿光谱特性。在相同含量和积分时间条件下,调节延迟时间,获取了砷元素的时间演化特性。确定砷元素的最佳延迟时间为1μs,积分时间为2μs。测定不同含量下,砷的特征谱线强度,给出砷元素的定标曲线,并计算得到砷元素的检测限为45mg/kg。     

Recombination luminescence in irradiated silicon-effects of uniaxial stress and temperature variations†

Luminescence in irradiated silicon consists of a spectral group between 0.80 eV and 1.0 eV which seems to be independent of impurities while a lower energy group between 0.60 eV and 0.80 eV is seen only in pulled crystals. The small halfwidth and temperature dependence of the sharp zero-phonon lines observed in these spectra indicates that the luminescence arises from a bound-to-bound transition. A model is proposed for the transition mechanism. Stress data taken on the 0.79 eV zero-phonon line in pulled crystals can be fit by either a tetragonal [100] defect symmetry or by conduction band splitting effects. It is suggested that the 0.79 eV zero-phonon line and the 0.60 eV to 0.80 eV spectral group arise from the EPR G-15 center. Stress data on a zero-phonon line at 0.97 eV associated with the 0.80 eV to 1.0 eV spectral group can be explained by a trigonal [111] defect. The divacancy is tentatively suggested as responsible for this luminescence spectra.     

Numerical simulation of the temperature dependence of the ionization energy of hydrogen-like impurities in semiconductors: Application to transmutation-doped Ge: Ga

An electrostatic model describing the dependence of the thermal ionization energy of impurities on their concentration, compensation factor, and temperature is developed. The model takes into account the screening of impurity ions by holes (electrons) hopping from impurity to impurity, the change in the impurity-band width, and its displacement with respect to the edge of the valence band for acceptors (conduction band for donors). The displacement of the impurity band is due to the functional dependence of the hole (electron) affinity of the ionized acceptor (donor) on the screening of the Coulomb field of the ions. The spatial distribution of the impurity ions over the crystal was assumed to be Poisson-like, and the energy distribution was assumed to be normal (Gaussian). For the relatively low doping levels under investigation, the behavior of the density of states at the edges of the valence and conduction bands was assumed to be the same as for the undoped crystal. The results of the numerical study are in agreement with the decrease in the ionization energy that is experimentally observed for moderately compensated Ge: Ga as the temperature and the doping level are decreased. It is predicted that the temperature dependence of the thermal ionization energy has a small anomalous maximum at small compensation factors.     

Diffusion of interstitial Mn in the dilute magnetic semiconductor (Ga,Mn)As: the effect of a charge state

Migration barriers for diffusion of interstitial Mn in the dilute magnetic semiconductor (Ga,Mn)As are studied using first-principles calculations. The diffusion pathway goes through two types of interstitial sites: As coordinated and Ga coordinated. The energy profile along the path is found to depend on the ratio of concentrations between substitutional and interstitial Mn in GaAs. Two regions of distinctly different behavior, corresponding to n-type and p-type (Ga,Mn)As, are identified. The difference in mobility is a reflection of the change in the charge state of Mn interstitials (double donors) that occurs in the presence of substitutional Mn impurities (acceptors). In addition, substitutional Mn impurities are shown to act as traps for interstitial Mn. The effective migration barrier for the positively doubly charged Mn interstitials in p-type (Ga,Mn)As is estimated to vary from 0.55 to about 0.95 eV.     

Internal absorption spectrum of boron doped compensated silicon Si(B,P)

Internal absorption spectrum of boron acceptor impurities in Si(B, P) is investigated at liquid helium temperature. The effect of internal coulomb field, due to the compensation, on the boron internal 2p' line is found to be greater than on the boron external acceptor lines.     

Head-on collision of ion thermal solitary waves in pair-ion plasmas containing charged dust impurities

In the present research paper, the study of the head-on collision between two ion thermal solitary waves is investigated in a two-fluid (i.e., a pair-ion) plasma consisting of positive and negative ions as well as a fraction of stationary (positively/negatively) charged dust impurities, using the extended Poincaré-Lighthill-Kuo method. The effects of the concentration of charged dust impurities and the positive-to-negative ion temperature ratio on the solitary waves collisions are investigated. It is found that the phase shift is significantly affected by the presence of the positive-to-negative ion temperature ratio and positively/negatively charged dust grains.     

Effect of impurities on the excitation of sulfur and halogen spectra in a low-voltage spark

The present paper concerns the effects of various impurities present in specimens on the conditions of sulfur, chlorine, and bromine spectrum excitation in a low-voltage discharge with graphite electrodes. The spectral line intensities of these elements increase with increasing atomic weights and decreasing ionization potentials of the impurities. The observed effect can be attributed to temperature changes, the influence of plasma composition on the excitation spectra by way of ionization processes, and the reduced rate of discharge channel expansion.     

Photothermal ionization spectroscopy for shallow impurities in ultra-pure silicon

We report the comprehensive results obtained in our group and last few years for the shallow impurities in ultrapure silicon by use of photothermal ionization spectroscopy. The new results reported here include the discovery and investigation of new shallow impurity centers in Si, the detection for the compensation of different types of impurities, the accurate determination for the spin-orbit splitting . of valence band for Si, and the phonon duplicates and Fano resonance for the transitions of shallow impurities in Si. In addition it is also shown experimentally that the sensitivity of the photothermal ionization spectroscopy as used for detecting the concentration of shallow donors in Si can reach as high as 10⁸ cm^–3, much higher than that reported in the literatures up to date, and line width for the sharpest spectral lines in the spectrum is about 0.08 cm^–1, that is, 10 eV.     

Influence of carrier gas H_2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures

In this work, we study the influence of carrier gas H_2 flow rate on the quality of p-type GaN grown and annealed at lower temperatures. It is found that the concentration of H atoms in Mg-doped GaN epilayer can effectively decrease with appropriately reducing the carrier gas H_2 flow rate, and a high-quality p-type GaN layer could be obtained at a comparatively low annealing temperature by reducing the carrier gas H_2 flow rate. Meanwhile, it is found that the intensity and wavelength of DAP peak are changed as the annealing temperature varies, which shows that the thermal annealing has a remarkable effect not only on the activation of acceptors but also on the compensation donors.     

Magneto-optical study of shallow donors in transmutation-doped GaAs

Lineshapes and peak positions of 1s→2p^?1, donor transitions in epitaxial GaAs samples of relatively low compensation have been studied as functions of magnetic field by use of photoconductivity measurements. Some of these samples were produced by transmutation doping using thermal neutrons—a method which is useful for the controlled introduction of donor impurities in GaAs. Two new effects, tentatively attributed to van der Waals interactions between neutral donor atoms, are observed: (1) although both Se and Ge donors are introduced by thermal neutron transmutation, the Se line is much broader than the Ge line, and (2) deviations from isolated-donor behavior occur in the magnetic field dependence of the chemical shift of the shallowest donor present. The separation of lines from two deeper donors, Ge and Si, verified the simple phenomenological theory of the magnetic field dependence of central cell corrections of isolated donors up to at least 10T.     

基于TDLAS技术的水汽低温吸收光谱参数测量

精确的气体光谱参数对气体浓度、温度等的光谱精确反演测量具有十分重要的意义,针对当前主流光谱数据库(例如HITRAN)中数据与实际数值存在相当误差的问题,自主研制了一套基于静态冷却技术的低温光谱实验平台,用于精确测量低温下的气体吸收光谱参数.运用该低温光谱实验平台,采用可调谐二极管激光吸收光谱(TDLAS)技术测量了温度为230—340 K、压强为10—1000 Pa时7240—7246 cm~(-1)波段的纯水汽振转跃迁光谱.采用Voigt线型多峰拟合方法,获得了5条水汽振转跃迁谱在不同温度、不同压强下的积分吸光度值及洛伦兹展宽值,运用线性拟合的方法得到这5条吸收线的自展宽半峰全宽系数及参考温度下的线强值.运用不确定度传递公式,计算得到实验结果的不确定度,与HITRAN2012数据库中的线参数进行对比,所测的5条吸收线中实验结果与数据库值最大相差10.96%,且实验结果的不确定度为1.11%—2.98%(置信概率p=95%,包含因子k=2),小于HITRAN2012数据库值的不确定度.     

The static approximation in the interpretation of collision broadening

The validity of the static approximation for analyses of spectral line profiles is considered. The Fourier transform of the profile of an isolated line is compared for representative cases with the unified theory, and it is shown that the simple static approximation can be used effectively to interpret low spectral resolution experiments. This result applies to the entire profile in the limit of high density, but it also applies at low density if the instrumental line width is sufficiently large. Furthermore, in the absence of turning points in the interatomic potential, the unified and static theories produce almost identical line-wing profiles. Easily evaluated criteria are provided to guide application of the straightforward static theory to the interpretation of interatomic potentials.     

Weak localization of Dirac fermions in graphene

In the presence of the charged impurities, we study the weak localization effect by evaluating the quantum interference correction to the conductivity of Dirac fermions in graphene. With the inelastic scattering rate due to electron-electron interactions obtained from our previous work, we investigate the dependence of the quantum interference correction on the carrier concentration, the temperature, the magnetic field, and the size of the sample. It is found that weak localization is present in large size samples at finite carrier doping. Its strength becomes weakened or quenched when the sample size is less than a few microns at low temperatures as studied in the experiments. In the region close to zero doping, the system may become delocalized. The minimum conductivity at low temperature for experimental sample sizes is found to be close to the data.     

飞秒激光诱导铝等离子体时间分辨光谱研究

在大气环境下利用中心波长800nm、脉宽为30fs的激光聚焦在铝靶上,测定了激光诱导铝等离子体中铝原子的时间分辨发射谱。在局部热平衡条件近似下,根据实验测定的谱线相对强度得到了等离子体的电子温度;研究了激光脉冲能量对等离子体电子温度的影响和等离子体电子温度的时间演化特性。同时,实验发现了394.4nm和396.1nm两条铝原子谱线存在较强的自吸收效应,实验结果表明随着激光脉冲能量的减少和延时的增加,自吸收现象逐渐消失。