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1.
A two-dimensional Total Routhian Surface (TRS) calculation with the fixed hexadecapole deformation ε4 = 0.03 was carried out for several configurations of 174Hf. Results indicate that the shell corrections have an important contribution to the formation of triaxial superdeformation in 174Hf and some possible configuration assignments are made to the 4 TSD bands experimentally found in 174Hf.  相似文献   

2.
The nuclear shapes of 187,189Tl were investigated theoretically in this work. The total routhian surface (TRS) calculations were performed for N=106 and 108 isotopes of thallium (Z=81). The single-particle energies were obtained from the deformed Woods-Saxon potential, with the Lipkin-Nogami (LN) treatment of pairing. It is found that the collective oblate rotation coexists with the high-K prolate rotation. Superdeformed prolate rotation is included in this calculation. Supported by the National Natural Science Foundation of China (Grant Nos. 10575036 and 10675046) and the Natural Science Foundation of Zhejiang Province of China (Grant Nos. Y605476 and Y604027)  相似文献   

3.
The interacting boson model with isospin (IBM-3) was applied to study the band structure and electromagnetic transition properties of the low-lying states in the even-even N = Z nucleus 52Fe. The isospin excitation states with T = 0, 1 and 2 were identified, and compared with the available data. The study shows that the 23+ state is the lowest mixed symmetry state in 52Fe. The excitation energy of the second 02+ state with T = 0 in nucleus 52Fe was identified. The model calculations with the data show a reasonably good agreement. Supported by the National Natural Science Foundation of China (Grant Nos. 10765001 and 10547003), the Natural Science Foundation of Inner Mongolian Autonomous Region of China (Grant No. 200607010111), and the Scientific Research Fund of Inner Mongolian Education Bureau (Grant Nos. NJZY07155 and NJZY07153)  相似文献   

4.
The surface morphology, electrical properties and optical properties of Si doped n-type GaN were investigated. The intentional SiH4 doped GaN films were grown by metal organic chemical vapor deposition with the electron concentration varying from 3×1016 cm−3 to 5.4×1018 cm−3. The surface morphology shows that the roughness and dislocation pits increase as the mass flow rate of SiH4 increases, which indicates that the quality of GaN degrades gradually. The activation energy of Si in GaN with different n concentrations varies from 12 to 22 meV, which may originate from the interactions of donor wave functions. The carrier transport mechanism with increasing temperature from 100 to 420 K was concluded as the complex effect of both impurity scattering and phonon scattering. The position of the near band edge emission peak was determined by both renormalization of the band gap and B-M effect. The intensity variations of the yellow luminescence could be explained by the change of Ga vacancy concentration caused by Si doping. Supported by the National Basic Research Program of China (Grant No. 2006CB6049), the National Hi-Tech Research and Development Program of China (Grant No. 2006AA03A142), the National Natural Science Foundation of China (Grant Nos. 60721063, 60731160628 and 60676057), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20050284004) and the Natural Science Foundation of Jiangsu Province of China (Grant No. BK2005210)  相似文献   

5.
The coherent-entangled state |α, x; λ> with real parameters λ is proposed in the two-mode Fock space, which exhibits the properties of both the coherent and entangled states. The completeness relation of |α, x; λ> is proved by virtue of the technique of integral within an ordered product of operators. The corresponding squeezing operator is derived, with its own squeezing properties. Furthermore, generalized P-representation in the coherent-entangled state is constructed. Finally, it is revealed that superp...  相似文献   

6.
The electronic structure, densities of states and optical properties of the stable orthorhombic BaSi2 have been calculated using the first-principle density function theory and pseudopotential method. The results show that BaSi2 is an indirect semiconductor with the band gap of 1.086 eV, the valence bands of BaSi2 are mainly composed of Si 3p, 3s and Ba 5d, and the conduction bands are mainly composed of Ba 6s, 5d as well as Si 3p. The static dielectric function ɛ 1(0) is 11.17, the reflectivity n 0 is 3.35, and the biggest peak of the absorption coefficient is 2.15×105 cm−1. Supported by the National Natural Science Foundation of China (Grant Nos. 60566001 and 60766002), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20050657003), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China (Grant No. (2005)383), the Specialized Fund of Nomarch for Excellent Talent of Science and Technology of Guizhou Province (Grant No. Z053114), the Scientific and Technological Projects for the Returned Overseas of Guizhou Province (Grant No. (2004)03), and the Top Talent’s Scientific Research Project of Organization Department of Guizhou Province (Grant No. Z053123)  相似文献   

7.
CdS/α-Fe2O3 hierarchical nanostructures, where the CdS nanorods grow irregularly on the side surface of α-Fe2O3 nanorods, were synthesized via a three-step process. The diameters and lengths of CdS nanorods can be tuned by changing the ethylenediamine (EDA) and Cd ion concentrations. The magnetic investigations by superconducting quantum interference device indicate that the hierarchical nanostructures have an Morin transition at lower temperature (230 K) than that of the single bulk α-Fe2O3 materials (263 K). Importantly, the hierarchical nanostructures exhibit weakly ferromagnetic characteristics at 300 K. A sharp peak assigned to the surface trap induced emission are observed in room temperature PL spectra. Combining with the optoelectronic properties of CdS, the CdS/α-Fe2O3 hierarchical nanostructures may be used as multi-functional materials for optoelectronic and magnetic devices. Supported by the National Natural Science Foundation of China (Grant Nos. 50772025 and 50872159), the Ministry of Science and Technology of China (Grant No. 2008DFR20420), the China Postdoctoral Science Foundation (Grant Nos. 20060400042 and 200801044), the Natural Science Foundation of Heilongjiang Province, China (Grant No. F200828), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20070217002), and the Innovation Foundation of Harbin City (Grant No. RC2006QN017016)  相似文献   

8.
The transient luminescence of three kinds of ruthenium complexes [Ru(bpy)2(7-CH3-dppz)]2+, [Ru(bpy)2(7-F-dppz)]2+ and [Ru(phen)2(7-F-dppz)]2+ bound to calf thymus DNA (ctDNA) has been studied by using the time-resolved spectroscopy. The results show that the luminescence is due to the radiative decay from the charge-transfer states to the ground state. By the interaction with DNA, the radiativeless rate of the photoexcited Ru complex molecules decreases, which results in the increase of luminescence lifetime and efficiency. The structure of the Ru complex has an important impact on the interaction with DNA. The [Ru(bpy)2(7-CH3-dppz)]2+ shows the longest luminescence lifetime (about 382 ns), while the [Ru(bpy)2(7-F-dppz)]2+ shows the shortest lifetime (about 65 ns). The possible origin of the luminescence dynamics is discussed. Supported by the National Natural Science Foundation of China (Grant Nos. 60478013 and 20571089), the Key Program of Natural Science Foundation of Guangdong Province of China (Grant No. 05101819), the Doctoral Program Foundation of Institutions of Higher Education of China (Grant No. 20040558031) and the Scientific Research Foundation of Maoming College (Grant No. 203346)  相似文献   

9.
High-spin states in 187Pt were studied via the 173Yb(18O, 4n) reaction. Rotational bands based on the νi13/2, ν7/2[503], νi2 13/2νj, ν3/2[512] and ν1/2[521] configurations were observed, and interpreted within the framework of the cranked shell model. The TRS calculations show that the νi13/2 band has an appreciable negative γ deformation, and the negative-parity bands tend to have a near prolate shape with small positive γ values. Experimental values of B(M1)/B(E2) ratios have been extracted and compared with theoretical values from the semi-classical D?nau and Frauendof approach, strongly suggesting a low frequency πh9/2 alignment in the ν7/2[503] band. Supported by the National Natural Science Foundation of China (Grant Nos. 10475097 and 10505025) and the Chinese Academy of Sciences  相似文献   

10.
The thermodynamics structural relaxation of Fe73Cu1.5Nd3Si13.5B9 amorphous alloy from room temperature to 400°C has been investigated by measuring the structure factor with in situ X-ray diffraction. The structural information of the atomic configuration such as radial distribution function (RDF) and neighbor atomic distance was gained by Fourier transformation. The research result shows that the amorphous structure remains stable in the temperature range of 30 to 400°C but exhibits distinct changes in local atomic configuration with the increase of temperature. The quantitative determination of the neighbor atomic distance suggests that the degree of short-range order changes by the temperature altering the second nearest neighbor local atomic configuration of the amorphous when structural relaxation occurs. Supported by the Natural Science Foundation of Hebei Province of China (Grant No. A2007000296), the National Natural Science Foundation of China (Grant No. 50731005), SKPBRC (Grant Nos. 2007CB616915 and 2006CB605201), and PCSIRT (Grant No. IRT0650)  相似文献   

11.
In this paper, an ultra-high resolution photoassociation spectroscopy study on photoassociation of cesium atoms is reported. The cold cesium gas in the magneto-optical trap is illuminated by a photoassociation laser with red-tuning as large as 40 cm−1 below the 6S 1/2 + 6P 3/2 dissociation limit, and the photoassociation to the excited state ultracold molecule is detected. High signal-to-noise ratio is obtained by using the lock-in detection of the fluorescence from the modulated cold Cs atoms. The 0 g , 1g and 0 u + long-range states which correspond to 6S 1/2 + 6P 3/2 dissociation limit are present in the photoassociation spectrum. The effective coefficients of leading long-range interactions and the corresponding vibrational quantum number are obtained using LeRoy-Bernstein Law. It is found that photoassociation process creates rotating molecules and the high J value is a hint that higher partial waves participate in the PA process in the presence of trapping laser. Supported by 973 Program of China (Grant. No. 2006CB921603), the National Natural Science Foundation of China (Grant Nos. 10574084, 60678003, and 60778008), the Special Foundation for State Major Basic Research Program of China (Grant No. 2005CCA06300), and the Youth Science Foundation of Shanxi Province of China (Grant No. 20041013)  相似文献   

12.
Li2B4O7 (LBO)Cu,Ag,Mg phosphors have been prepared by the sintering technique.The roles of the Ag and Mg dopants in the phosphors have been studied using the methods of thermoluminescence (TL) glow curves and TL 3D spectra. The results indicated that proper concentrations of Ag and Mg can enhance the TL of LBOCu.It was also indicated that the intensity of TL peak at ~130℃ is reduced with the increasing Ag concentration, and enhanced with the increasing Mg concentration.From the TL 3D spectra, three emission bands (λ1 = 421 nm,λ2 = 380 nm, λ3 = 350nm) were observed the intensity of low energy emission band is reduced and that of the high energy is enhanced with the increasing dopant Ag; on the contrary, the intensity of low energy emission band is enhanced and that of the high energy one is reduced with the increasing dopant Mg.  相似文献   

13.
Using the slow highly charged ions 129Xe q+ (q = 25, 26, 27; initial kinetic T 0⩽4.65 keV/a.u.) to impact Au surface, the Au atomic Mα characteristic X-ray spectrum is induced. The result shows that as long as the charge state of projectile is high enough, the heavy atomic characteristic X-ray can be effectively excited even though the incident beam is very weak (nA magnitude), and the X-ray yield per ion is in the order of 10−8 and increases with the kinetic energy and potential energy of projectile. By measuring the Au Mα-X-ray spectra, Au atomic N-level lifetime is estimated at about 1.33×10−18 s based on Heisenberg uncertainty relation. Supported by the National Natural Science Foundation of China (Grant Nos. 10574132, 10274088 and 10405025), the Talent Introduction Project of Xianyang Normal University (Grant No. 05XSYK103) and the Education Commission Foundation of Shaanxi Province (Grant No. 04JK300)  相似文献   

14.
A wavelet analysis method is introduced to study the possible periods of PKS 1510-089 in radio bands. By compiling the radio light curve of PKS 1510-089 at frequencies of 22 and 37 GHz from 1990 to 2005, and using the wavelet analysis method, the evidence of quasi-periodic activity in PKS 1510-089 was obtained. The results indicate that: (1) There are two stable outburst periods of T1=(1.80±0.06) yr and T2= (0.90±0.07) yr presenting in the isoplethal map of PKS 1510-089 at the radio band 37 GHz; (2) there i...  相似文献   

15.
A quasi-Gaussian approximation scheme is formulated to study the strongly correlated imbalanced Fermions thermodynamics, where the mean-field theory is not applicable. The non-Gaussian correlation effects are understood to be captured by the statistical geometric mean of the individual susceptibilities. In the three-dimensional unitary fermions ground state, a universal nonlinear scaling transformation relates the physical chemical potentials with the individual Fermi kinetic energies. For the partial polarization phase separation to full polarization, the calculated critical polarization ratio is δ C = [1−(1−ξ)6/5]/[1+(1−ξ)6/5] ≐ 0.34. ξ = 4/9 gives the ratio of the symmetric ground state energy density to that of the ideal fermion gas. Supported by the National Natural Science Foundation of China (Grant Nos. 10875050 and 10675052), the Fund of Central China Normal University, and the Foundation of Ministry of Education of China (Grant No. IRT0624)  相似文献   

16.
The highly charged ion 40Ar16+ with the velocity (kinetic energy E K=150 keV, velocity V=8.5×105 m/s) smaller than Bohr velocity (V Bohr=2.9×106 m/s) was found to hove impacts on the surfaces of metals Ni, Mo, Au and Al, and the Ar atomic infrared light lines and X-rays spectra were simultaneously measured. The experimental results show that the highly charged ion that captures electrons is neutralized, and the multiply-excited hollow atom forms. The hollow atom cascade decay radiates lights from infrared to X-ray spectrum. The intensity of infrared lights shows that the metallic work functions play an important role in the neutralization process of highly charged ions during their interaction with metallic surfaces, which verifies the classical over-the-barrier model. Supported by the National Natural Science Foundation of China (Grant No. 10574132), the Natural Science Foundation of Shaanxi Province (Grant No. 2007A05) and the Talents Introduction Project of Xianyang Normal University (Grant No. 05XSYK103)  相似文献   

17.
InN films grown on sapphire at different substrate temperatures from 550°C to 700°C by metalorganic chemical vapor deposition were investigated. The low-temperature GaN nucleation layer with high-temperature annealing (1100°C) was used as a buffer for main InN layer growth. X-ray diffraction and Raman scattering measurements reveal that the quality of InN films can be improved by increasing the growth temperature to 600°C. Further high substrate temperatures may promote the thermal decomposition of InN films and result in poor crystallinity and surface morphology. The photoluminescence and Hall measurements were employed to characterize the optical and electrical properties of InN films, which also indicates strong growth temperature dependence. The InN films grown at temperature of 600°C show not only a high mobility with low carrier concentration, but also a strong infrared emission band located around 0.7 eV. For a 600 nm thick InN film grown at 600°C, the Hall mobility achieves up to 938 cm2/Vs with electron concentration of 3.9 × 1018 cm−3. Supported by the National Basic Research Program of China (Grant No. 2006CB6049), the National Natural Science Foundation of China (Grant Nos. 6039072, 60476030 and 60421003), the Great Fund of the Ministry of Education of China (Grant No. 10416), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20050284004), and the Natural Science Foundation of Jiangsu Province of China (Grant Nos. BK2005210 and BK2006126)  相似文献   

18.
In this paper we report the fabrication and superconducting properties of GdO1−x F x FeAs. It was found that when x is equal to 0.17, GdO0.83F0.17FeAs is a superconductor with the onset transition temperature T con ≈ 36.6 K. Resistivity anomaly near 130 K was observed for all samples up to x = 0.17, and such a phenomenon is similar to that of LaO1−x F x FeAs. Hall coefficient indicates that GdO1−x F x FeAs is conducted by electron-like charge carriers. Recommended by Prof. Nie Yuxin, Executive Editor of Science in China Series G-Physics, Mechanics & Astronomy Supported by the National Natural Science Foundation of China (Grant Nos. 10221002/A0402 and 10774170/A0402), the National Basic Research Program of China (973 Program) (Grant Nos. 2006CB601000, 2006CB921107 and 2006CB921802), and the Chinese Academy of Sciences (ITSNEM)  相似文献   

19.
20.
The geometries, electronic structures and related properties of SimN8-m(0 〈 m 〈 8) clusters are studied using density functional theory (DFT) with hybrid functional B3LYP. The calculated results reveal several trends. For any stoichiometric clusters, the lowest energy isomers with an alteration of N and Si atoms are favourable in energy if the numbers of Si and N atoms are large enough to form ... Si N-Si-N... alternative chains. The bond lengths of single Si-N bonds are very close to the corresponding values of the bulk and other SiN clusters. The geometries for N-rich and Si4N4 clusters are planar structures, but three-dimensional structures are favourable in energy for Si-rich clusters. With the increase of m, the isotropic polarizability and average polarizability increase, the total binding energies generally decrease, the HOMO-LUMO gap and vertical ionization potential oscillate with increasing number of valence electrons, and their values with even valence electrons are larger than those with odd valence electrons. The atomic charges, IR and Raman properties are also reported.  相似文献   

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