Luminescence response of CsI:Na to electron pulse irradiation

This paper investigates the influence of activator concentration and temperature on the scintillation process in CsI:Na crystal which was excited by a pulsed electron beam (E_ex = 0.25 MeV, t_1/2 = 15 ns, W = 0.003…0.16 J/cm²) at temperature within 77–300 K. It has been established that the transition of Na-bound two halide exciton from singlet state causes 3 eV emission of CsI:Na. The capturing of V_k by Na⁺ ion determines the scintillation pulse shape. Thermal liberation of V_k from V_kA centers results in an inertial rise of the emission pulse in lightly activated CsI:Na and in a mono-exponential decay of the emission pulse in heavily activated CsI:Na. The value of thermal dissociation energy of V_kA centers is 0.24 ± 0.01 eV, which was obtained from the temperature dependences of the emission decay time constant for CsI:2.8∙10⁻³%Na and of the rise time constant for CsI:2.0∙10⁻⁴%Na.     

狭长CsI(Tl)闪烁体发光效率的研究

提出了基于狭长CsI（Tl）闪烁体和面阵CCD器件,采用光纤和光纤面板进行光耦合及传输,以扇形束线阵扫描方式实现对X射线探测与成像的工业X-CT系统探测器方案.基此,通过物理分析及数学建模,利用Matlab模拟研究了X光能量小于450 keV时狭长CsI（Tl）闪烁体的发光效率等性能指标.研究结果表明：当光电吸收截面μph和康普顿吸收截面μc分别为0.000313和0.0000295、反射层反射系数R和衬底反射系数Rs分别取0.95和0.8、荧光线性吸收系数σ取0.000222 μm－1时,得到狭长CsI(Tl)闪烁晶体的长度l、高度h和宽度w取值范围分别是926～4512 μm、242～5000 μm和242～5000 μm的结论.在此范围内,既可使闪烁晶体有较好的空间分辨率又可获得最高的发光效率.     

液态温度下Na:KCl晶体中F_B(Ⅱ)色心激光的实验研究

介绍了掺Na的KCl晶体中F_B(Ⅱ)心在液氮温度下的稳定激光运转.Q开关Nd:YAG激光的信频输出泵浦色心晶体.激光发射波长为2.420～2.542μm.对实验结果作了讨论.     

Time-resolved optical spectroscopy of CsI(Tl) crystals by pulsed electron beam irradiation

Properties of the color and emission centers induced with an electron pulse beam at temperature within 80-300 K have been studied in CsI(Tl) crystals. It has been established by optical spectrometry with time resolution that initial color centers in this crystal are only Tl⁰ and V_k centers, which spontaneously recombine emitting visible light at 2.25 and 2.55 eV. It has been shown that the emission decay kinetics at 80 K include two fast exponential components with decay constants 3 and 14 μs as well as slow hyperbolic component with the power index depending on the wavelength of the emitting light. The temperature effect on the emission kinetics has been studied and it has been directly proved that the emission rise stage at the temperature above 170 K is caused by the recombination of electrons, which are thermally released from single Tl⁰ centers, with V_kA centers. The origin of scintillations in CsI(Tl) crystal is discussed in terms of the tunnel electron transitions from ground state of Tl⁰ centers to ground state of V_k centers at different distances from each other.     

Color centers in heavily irradiated CsI(Tl) crystals

The absorption and luminescence properties of CsI(Tl) crystals colored by irradiation are studied by the method of the time-resolved spectroscopy. The scheme of the electron transitions in CsI(Tl) crystal is suggested to explain the appearance of the color centers under exposure to the near-UV light. It is established that either of the two types activator color centers holds the charge carrier with opposite sign. The model of the hole Tl²⁺v_c⁻ activator color center is suggested. According to the model the positive charge of Tl²⁺ ion is compensated by the negative charge of a close cation vacancy v_c⁻. The color center emission reveals in the cathode-luminescence spectrum of the colored CsI(Tl) crystal. The high-dose irradiation of CsI(Tl) crystal results in the reduction of the decay time of the near-thallium self-trapped excitons (STE) emission. The decay kinetics of Tl²⁺v_c⁻ emission contains the time components typical for the decay kinetics of near-thallium STE emission. The reason of the observed effects is the energy transfer from the near-thallium STE excitons to the color centers via the inductive-resonant mechanism.     

Size-induced effect on cathode luminescence spectra of CsI(Na) and CsI(Tl) crystals

We investigated the cathode luminescence characteristics of CsI(Na)and CsI(Tl)crystals by the spectrum and structure properties at room temperature.We fabricated three different sizes of CsI(Na)and CsI(Tl)crystals and measured their luminescence spectra under cathode rays.We found that CsI(Na)cathode luminescence peaks appear at 420 and 305 nm,and CsI(Tl)cathode luminescence peaks are 540 and 410 nm,the grain size affects CsI(Na)luminescence significantly,and the Na-related420 nm luminescence intensified relatively when the average grain size reaches~20μm,which becomes weak when the grain size is down to nano-scale.But the cathode luminescence spectra of CsI(Tl)crystals with different size have no obvious changes.Our explanations for these phenomena are that the different impurities in the same host material CsI lead to different luminescence mechanisms.These cathode luminescence characteristics indicate the suitability of CsI(Na)and CsI(Tl)crystals to match photomultiplier tube for large area crystal detector development.     

Er~(3+),Yb~(3+)共掺杂Y_2O_3纳米晶体粉末中1.5μm近红外发光增强现象的研究

用燃烧法制备了平均粒径为10和40nm的(Y0.96Er0.02Yb0.02)O3纳米晶体样品,并通过1200℃高温退火获得了同样组分的体材料样品。利用X射线衍射谱(XRD),傅里叶变换红外吸收光谱(FTIR),透射电镜(TEM)和透射电镜(SEM)照片对样品的晶体结构和形貌进行了表征。测量了不同样品980nm激发下的上转换发射光谱和近红外发射光谱。对实验结果的分析发现,随着粒径的减小,样品发射光谱中红光和近红外发射的成分增加。产生这一现象的原因是由于纳米材料具有比表面积大的特点,能够吸附更多的OH-(振动能量3200～3800cm-1),OH-数量的增加使电子从Er3+的4I11/2→4I13/2能级(能量差3600cm-1)的无辐射弛豫速率增大,这一无辐射弛豫过程减少了4I11/2上的电子布居数,使绿光发射减弱;同时增加了4I13/2上的电子布居数,使红光和近红外发射增强。40nm样品的1.5μm发射主峰强度是体材料的1.6倍,这一结果对纳米发光材料的实际应用是很有意义的。     

High-repetition-rate near-infrared noncollinear ultrabroadband optical parametric amplification in KTiOPO4

We report efficient noncollinear optical parametric amplification (NOPA) of ultrabroadband near-IR pulses tunable in the 1.1-1.5 μm range at a repetition rate of 250 kHz. Improved generation of smooth near-IR continua (extending over ~1.0-1.6 μm) at 250 kHz was achieved by weakly focusing ~20% of the 1 W driving laser beam into a sapphire plate with longer focal length lenses than previously reported. Using bulk potassium-titanyl phosphate (KTiOPO(4)) pumped at 800 nm, powers as high as 11 mW (14% pump conversion efficiency) and signal pulse durations as short as 23 fs were obtained after a single white-light seeded NOPA stage.     

Operation of a Raman laser in bulk silicon

A Raman laser based on a bulk silicon single crystal with 1.127 μm emission wavelength is demonstrated. The Si crystal with 30 mm length was placed into an external cavity and pumped by a Q-switched Nd:YAG master oscillator power amplifier system. Strong defocusing of the pump and Raman laser beam by free carriers was compensated by an intracavity lens. Raman laser operation with a pulse duration of 2.5 ns was identified by a Raman laser threshold significantly lower than the single-pass stimulated Raman-scattering threshold. Linear absorption losses of the 1.06415 μm pump radiation are strongly reduced by cooling the Si crystal to a temperature of 10 K.     

Luminescence processes in CsI doped with Na+ and K+ ions

The luminescence bands around 420 nm and 370 nm in CsI:Na and CsI:K have been studied by measuring the temperature dependence of decay times and luminescence and its excitation spectra. The bands are due to singlet+triplet localized excitons and to triplet localized excitons, respectively, at low temperature. Zero field splitting and life time amount to 0.2 meV and 3.3 μs for the 420 nm band, and to 2.1 meV and 1.7 μs for the 370 nm band. Creation processes of 420 nm excitons may not be the same below 40 K and near room temperature.     

CsI(Tl) layers spectroscopy - comparison with crystals

Abstract

Emission and excitation spectra at liquid helium and liquid nitrogen temperature of CsI(Tl) single crystals and evaporated thin layers have revealed the existence of new centers in such materials. In particular, an emission band is observed around 460nm excited near 325 nm correlates with the quality of the evaporated thin film in terms of light yield and temporal behavior. The results can be interpreted using a dopant ion-bound exciton model involving different kinds of perturbed and non-perturbed centers.     

微柱状CsI闪烁薄膜热蒸发生长工艺

采用真空热蒸发法在石英玻璃基片上制备了具有特殊微柱状结构的碘化铯闪烁薄膜。运用扫描电子显微镜、X射线衍射仪和荧光光谱仪分别对碘化铯薄膜的形貌、结构及发光性能等进行了表征与分析。结果表明：在基片温度为260 ℃、沉积速率为3 nm·s-1时,所生长的碘化铯薄膜具有理想的微柱形貌、沿（110）晶面的择优取向和良好的透射性能;紫外光激发下,发射主峰为 438 nm,X射线激发下,发射主峰为315 nm,说明短波段发射峰需要的激发能量较高,而长波段发射峰对紫外光激发更为敏感。     

Optical gain measurements in doped alkali-halides

In order to verify the possibility of obtaining laser action in doped alkali-halides crystals, optical amplification measurements have been performed by the amplified spontaneous emission (ASE) technique. Results obtained in CsI : In(Tl) crystal are reported and discussed.     

Structure and luminescence of CsI:Eu columnar films

Europium doped columnar films of CsI are produced by vacuum condensation. Eu²⁺ ions in the CsI:Eu films lead to the formation of a narrow (0.18 eV), intense luminescence band with a maximum at 456 nm, which is excited by x-rays, as well as by photons of various energies. The spectral and kinetic characteristics of the emission depend on the amount of activator and on the conditions under which the film is prepared and stored. The nature of the luminescence centers is determined by structural formations that contain divalent europium ions.     

Continuous-wave, single-frequency intracavity singly resonant optical parametric oscillator at 1.5-μm wavelength

We present a 1.5μm continuous-wave （CW） single-frequency intracavity singly resonant optical parametric oscillator （SRO） based on periodically poled lithium niobate （PPLN）. The SRO is placed inside the ring cavity of a single-frequency 1.06μm Nd：YVO4 laser pumped by a laser diode. The device delivers a maximum single-frequency output power of 310 mW at a resonant signal wavelength of 1.57 μm. The signal wave could be tuned from 1.57 to 1.59 μm by temperature tuning of PPLN crystal over the range of 130 - 170℃.     

Zr掺杂形式对钨电子发射材料组织性能的影响

采用中频感应加热烧结方法制备了W-1.5%La₂O₃-0.1%Y₂O₃-0.1%ZrO₂和W-1.5%La₂O₃-0.1%Y₂O₃-0.08%ZrH₂电子发射材料,烧结样品的致密度约为95.5%。热电子发射测试结果表明,添加氢化锆的热电子发射材料样品的零场发射电流密度大于添加氧化锆的样品,分析认为是添加的氢化锆在烧结时,发生分解,生成活性的Zr可以捕获钨晶界中的杂质氧,净化晶界,从而提高了电子发射;维氏显微硬度表明添加氢化锆样品的硬度高于添加氧化锆的样品,分析表明是氢化锆的添加有效改善了钨晶粒之间的结合性,提升了钨电子发射材料的硬度。利用SEM,EDS,XRD、金相显微镜等表面分析设备对样品进行了表征,样品结构显示添加氢化锆与添加氧化锆相比,不仅钨晶粒尺寸由13.63 μm降至11.63 μm,而且稀土相尺寸由1.87 μm降至1.66 μm,这种组织结构的变化有利于电子发射。     

微柱状CsI闪烁薄膜热蒸发生长工艺

采用真空热蒸发法在石英玻璃基片上制备了具有特殊微柱状结构的碘化铯闪烁薄膜。运用扫描电子显微镜、X射线衍射仪和荧光光谱仪分别对碘化铯薄膜的形貌、结构及发光性能等进行了表征与分析。结果表明:在基片温度为260℃、沉积速率为3 nm.s-1时,所生长的碘化铯薄膜具有理想的微柱形貌、沿(110)晶面的择优取向和良好的透射性能;紫外光激发下,发射主峰为438 nm,X射线激发下,发射主峰为315nm,说明短波段发射峰需要的激发能量较高,而长波段发射峰对紫外光激发更为敏感。     

X光高分辨探测用CsI(Tl)晶体的蒙特卡罗模拟研究

提出了一种基于CsI(Tl)闪烁晶体和面阵CCD器件、采用光纤和光纤面板进行光耦合及传输、以扇形束线阵扫描方式实现对X光高分辨探测的方案。CsI(Tl)晶体的尺寸大小将直接影响到晶体的发光效率及X光的高分辨探测,据此开展了蒙特卡罗模拟研究。模拟研究了X射线能量、X射线源到探测晶体的距离(源距)、CsI(Tl)晶体的厚度与X射线能量分布、全能峰效率与CsI(Tl)闪烁晶体转换效率之间的关系。结果表明,当X射线能量为120~450 keV,CsI(Tl)晶体尺寸厚度为0~1.5 cm变化时,全能峰效率的变化范围为31.34~96.74%,CsI(Tl)闪烁晶体的转换效率的变化范围为12.8~97.43%。可见,X射线的能量及CsI(Tl)闪烁晶体尺寸的厚度,是决定X光高分辨探测的重要参量,这对优化X光高分辨探测用CsI(Tl)晶体的尺寸设计具有一定的参考价值。     

Cr：Nd：GSGG晶体1．061μm受激发射截面随温度变化特性研究

测量了Cr：Nd：GSGG晶体从-70℃到 80℃温度下的荧光发射光谱和荧光寿命，计算了该晶体在不同温度下1．061μm受激发射截面，获得在此温度变化范围内受激发射截面随温度的线性变化关系。     

ICP-AES法测定碘化铯晶体中的铊和钠

本文建立了电感耦合高频等离子体原子发射光谱法（ICP－AES）对碘化铯晶体中的铊和钠元素的直接同时测定方法，并对分析线的选择，溶液的酸度，基体效应，试样的溶解等条件进行了实验研究，用正交设计对仪器工作参数进行了最佳条件选择，采用本法测定碘化铯晶体中掺杂元素铊和钠的检出限分别为0．21ug/mL和0．095ug/mL，相对标准偏差分别为3．7％和2．4％，加标回收率介于87－102％，之间，该法简便，快速，准确，结果令人满意。