Diode-end-pumped passively mode-locked Nd:GGG laser with a semiconductor saturable mirror

We report on the passive mode-locking of a diode-end-pumped neodymium-doped gadolinium gallium garnet (Nd:GGG) crystal with a semiconductor saturable absorber mirror (SESAM). Continuous wave (CW) mode-locking was obtained. The mode-locked pulse duration was estimated to be ∼17.5 ps with a maximum average output power of 0.4 W. The mode-locked pulses have a repetition rate of 121.5 MHz. To our knowledge, this is the first demonstration of passive mode-locking of the diode pumped Nd:GGG lasers.     

Diode-pumped passively Q-switched mode-locked Nd:LuVO4 laser with a semiconductor saturable absorber mirror

We present a compact passively Q-switched mode-locked Nd:LuVO₄ laser run in a Z-type folded cavity with semiconductor saturable absorber mirror (SESAM). The repetition rates of the passively Q-switched pulse envelope ranges from 22.99 to 141.18 kHz as the pump power increased from 2.372 to 8.960 W. The repetition rates of mode-locked laser pulses in the Q-switched pulse envelope has 111 MHz determined by the cavity length and the mode-locked pulse duration is evaluated to be 257 ps. An average output power of 823.5 mW is achieved at the pump power of 8.96 W, corresponding to an optical conversion efficiency of 9.2%.     

4-ps passively mode-locked Nd:Gd0.5Y0.5VO4 laser with a semiconductor saturable-absorber mirror

We have demonstrated a passively mode-locked diode end-pumped all-solid-state laser, which is composed of a Nd:Gd0.5Y0.5VO4 crystal and a folded cavity with a semiconductor saturable-absorber mirror grown by metal-organic chemical-vapor deposition. Stable cw mode locking with a 3.8-ps pulse duration at a repetition rate of 112 MHz was obtained. At 13.6 W of the incident pump power, a clean mode-locked fundamental-mode average output power of 3.9 W was achieved with an overall optical-to-optical efficiency of 29.0%, and the slope efficiency was 38.1%.     

Self-starting mode-locked femtosecond forsterite laser with a semiconductor saturable-absorber mirror

We report on a self-starting mode-locked femtosecond Cr:forsterite laser pumped by a diode-pumped Nd:YVO(4) laser. The mode locking is initiated by a semiconductor saturable-absorber mirror (SESAM). We also present the measured group delay of the forsterite crystal and the SESAM.     

Diode-end-pumped passively mode-locked high-power Nd:YVO4 laser with a relaxed saturable Bragg reflector

We demonstrate a high-power passively mode-locked Nd:YVO (4) laser that uses a saturable Bragg reflector (SBR) with strain relaxation. 23.5 W of average power with ~21.5-ps cw mode-locked pulse trains was generated at a 50-W pump power. Experimental results show that appropriate strain relaxation in the SBR makes the mode-locking operation less sensitive to temperature variation.     

5.3-W Nd:YVO_4 passively mode-locked laser by a novel semiconductor saturable absorber mirror

We report a diode end-pumped continuous wave (CW) passively mode-locked Nd:YVO4 laser with a homemade semiconductor saturable absorber mirror (SESAM). The maximum average output power is 5.3 W at the incident pump power of 17 W, which corresponds to an optical-optical conversion efficiency of 31.2% and slope efficiency of 34.7%. The corresponding optical spectrum has a 0.2-nm full width at half maximum (FWHM). and the pulse repetition rate is 83 MHz.     

5.3-W Nd:YVO4 passively mode-locked laser by a novel semiconductor saturable absorber mirror

We report a diode end-pumped continuous wave (CW) passively mode-locked Nd:YVO4 laser with a homemade semiconductor saturable absorber mirror (SESAM). The maximum average output power is 5.3 W at the incident pump power of 17 W, which corresponds to an optical-optical conversion efficiency of 31.2% and slope efficiency of 34.7%. The corresponding optical spectrum has a 0.2-nm full width at half maximum (FWHM), and the pulse repetition rate is 83 MHz.     

Self-starting mode-locked Cr(4+):YAG laser with a low-loss broadband semiconductor saturable-absorber mirror

We report a self-starting mode-locked Cr(4+):YAG laser with a low-loss broadband metal reflector-based semiconductor saturable-absorber mirror. The minimum pulse width was 44 fs at a wavelength of 1520 nm.     

Broadband semiconductor saturable-absorber mirror for a self-starting mode-locked Cr:forsterite laser

We report a low-loss broadband semiconductor saturable-absorber mirror (SESAM) that uses gold film as the reflector. A semiconductor- SiO(2) double-layer stack enhances the reflectivity of the gold film. This low-loss SESAM was used in a mode-locked Cr:forsterite laser to produce self-starting 20-fs-scale laser pulses at 1.3 microm . The structure can be applied to SESAM's for other wavelengths.     

Single output LD end-pumped passively mode-locked Nd:YVO4 laser with semiconductor saturable absorber mirror

A quarter-wave plate and the thin film polarizer(TFP) are used for the LD end-pumped passively mode-locked Nd:YVO4 laser with semiconductor saturable absorber mirror(SESAM) to obtain a single beam output with a total power of 4.8 W.An optical-optical efficiency is achieved to be 24% for a stable CW mode-locking operation at 1064 nm,with a pulse repetition rate of 70 MHz and pulse width of 16 ps.The multipulse in the pulse sequence is eliminated for reaching a peak power as high as 4 kW.     

Passively mode-locked Nd:LuVO(4) laser with a GaAs wafer

We report on the passive mode locking of a diode-pumped Nd:LuVO(4) laser with a GaAs wafer as output coupler. Using the interference modulation effect of the GaAs wafer, high-power continuous-wave mode locking with a pulse width of about 7.1 ps and an average output power of 3.11 W was achieved. Our result shows that Nd:LuVO(4) could be an excellent gain medium for diode-pumped high-power mode-locked lasers.     

Passively mode-locked Nd:GGG laser with a semiconductor saturable absorber mirror

The mode-locking operation of the Nd:GGG crystal with a semiconductor saturable absorber mirror (SESAM) was demonstrated. Continuous wave (CW) mode-locking was obtained with the pulse duration of 11 ps and the pulse repetition rate of 40.38 MHz. At 7 W of pump power, the maximum average output power of 1.1 W was obtained with the slope efficiency of 18.1%.     

Continuous-wave passively mode-locked Nd:YVO<Subscript>4</Subscript>/KTP green laser with a semiconductor saturable absorber mirror

A diode-pumped passively mode-locked low-doped Nd:YVO₄ green laser with a semiconductor saturable absorber mirror (SESAM) and an intracavity frequency-doubling KTP crystal is demonstrated. In order to efficiently release the thermal effect, a low-doped Nd:YVO₄ crystal with the Nd³⁺ concentration of 0.1 at % is employed as the gain medium. The maximum average output power of 3.1 W at 532 nm with a repetition rate of 102 MHz is obtained under the pump power of 25 W, corresponding to an optical conversion efficiency of 12.4%. The 532 nm mode locked pulse width is estimated to be approximately 6.1 ps.     

半导体可饱和吸收镜锁模的钒酸盐混晶Nd:Gd0.1Y0.9VO4激光器

采用Nd∶Gd_0.1Y_0.9VO₄晶体作为增益介质和Z形腔结构,分析比较了腔内加入自行设计的镀和不镀高反膜的半导体可饱和吸收镜（SESAM）对激光锁模的影响.在腔内加入镀膜SESAM后,激光锁模阈值由1.69W下降为1.45W,并且锁模更稳定.在2W抽运功率下,在1064nm中心波长处获得了双端250mW的连续锁模输出,光光转换效率为12.5%,重复频率为142.25MHz. 关键词： 0.1Y_0.9VO₄激光器')" href="#">Nd∶Gd_0.1Y_0.9VO₄激光器 半导体可饱和吸收镜 连续锁模     

Diode-pumped passively mode-locked Nd:CLNGG laser

Passive mode-locking of a diode-pumped Nd:CLNGG laser was demonstrated for the first time to our knowledge. The laser operated at a central wavelength of 1061.2 nm with a maximum average output power of 101 mW. The mode-locked pulses have pulse duration of 2.0 ps, a spectral bandwidth of 1.2 nm and a repetition rate of 88.4 MHz. The mode locking of the laser was enabled by a semiconductor saturable absorber mirror (SESAM).     

Diode-pumped passively mode-locked Nd:YVO4 laser at 914 nm

We demonstrate, for the first time, to our knowledge, a diode-pumped passively mode-locked Nd:YVO4 laser, operating on the 4F(3/2)-4I(9/2) transition of the neodymium ion at 914 nm. We obtained 8.8 ps pulses at approximately 914 nm at a repetition rate of 94 MHz, and an averaged output power of 87 mW by using a semiconductor saturable absorber mirror.     

High-average-power and high-conversion-efficiency continuous wave mode-locked Nd:YVO4 laser with a semiconductor absorber mirror

A high-power continuous wave (cw) mode-locked Nd:YVO₄ solid-state laser was demonstrated by use of a semiconductor absorber mirror (SAM). The maximum average output power was 8.1 W and the optic-to-optic conversion efficiency was about 41%. At the maximum incident pump power, the pulse width was about 8.6 ps and the repetition rate was 130 MHz. Experimental results indicated that this absorber was suitable for high power mode-locked solid-state lasers.     

Passive mode-locking in diode-pumped c-cut Nd:LuVO<Subscript>4</Subscript> laser with a semiconductor saturable-absorber mirror

We demonstrated a diode-pumped passively mode-locked c-cut Nd:LuVO₄ picosecond laser with a semiconductor saturable-absorber mirror (SESAM) at a wavelength of 1067.8 nm. Due to the wide bandwidth of 0.48 nm, stable mode-locking has been generated with a duration as short as 3.7 ps, which is shorter than for the a-cut Nd:LuVO₄ laser. A maximum output power of 1.67 W was achieved to give a highest peak power of 3.47 KW at 18 W absorbed pump power.     

Diode-pumped passively mode-locked Nd:GdVO<Subscript>4</Subscript> laser with a GaAs saturable absorber mirror

We report on a diode end-pumped passively mode-locked Nd:GdVO₄ laser. By using a GaAs wafer simultaneously as the saturable absorber and the output coupler, stable continuous-wave mode locking was achieved. The pulse width was measured to be 18.9 picoseconds at a repetition rate of 370 MHz. The most remarkable property of the laser is that its repetition rate can be changed from 370 MHz to 3.348 GHz by simply changing the cavity length. An average output power of 3.46 W at a 3.348 GHz repetition rate was obtained with a 14 W pump power. To our knowledge, this is the first demonstration of a passively mode-locked Nd:GdVO₄ laser using a GaAs wafer as the saturable absorber. PACS 42.55.Rz; 42.60.Fc; 42.55.Xi.     

Robust diode-end-pumped Nd:GdVO4 laser passively mode-locked with saturable output coupler

Passively mode-locked diode-pumped solid-state (DPSS) Nd:GdVO₄ laser by using a saturable output coupler (SOC) in stable two-mirror linear cavity design is demonstrated. The laser was pumped by low-power single laser diode without any active cooling and external optics. Robust CW mode-locked operation was obtained with a repetition of 150–250 MHz, the pulsewidth was 12 ps, the lowest threshold for CW mode-locked was 185 mW. The optimal condition is found when the laser provides the set of characteristics: low CW mode-locking threshold (～260 mW), compact size (total cavity length 60 cm), good efficiency (～20%), and very stable output. At the output power of 270 mW an average power fluctuations within ±2% for long-term operation was obtained.