Simultaneous dual-wavelength emission at 0.90 and 1.06 µm in Nd-doped laser crystals

Continuous-wave (CW) simultaneous laser emission on the 0.9-μm ⁴ F _3/2 → ⁴ I _9/2 transition and the ⁴ F _3/2 → ⁴ I _11/2 transition at 1.06 μm is obtained in Nd-based laser crystals of thin-disk geometry and using a multi-pass pumping scheme. A Nd:Y₃Al₅O₁₂ (Nd:YAG) thin disk emitted simultaneous laser radiation at 946 and 1064 nm with 5.1 W output power, and Nd:YVO₄ and Nd:GdVO₄ thin-disk lasers with more than 3 W output power at 0.91 and 1.06 μm were realized. The ratio between the output power at one of the wavelengths and the total output power could be varied by the laser resonator design. An intracavity frequency-doubled Nd:YVO₄ thin-disk laser with alternate green at 532 nm and “deep-blue” at 457 nm generation of high average output powers is demonstrated.     

Continuous-wave high-power multi-pass pumped thin-disc Nd:GdVO4 laser

A thin-disc Nd:GdVO₄ laser in multi-pass pumping scheme was developed. Continuous-wave output power of 13.9 W at 1.06 μm for an absorbed power at 808 nm of 22 W was demonstrated from a 250-μm thick, 0.5-at.% Nd:GdVO₄ in a 4-pass pumping; the slope efficiency in absorbed power was 0.65, or 0.47 in input power. Output performances were also investigated under diode laser pumping at 879 nm, directly into the emitting ⁴F_3/2 level: maximum power of 3.6 W was obtained at 6.2 W of absorbed power with 0.69 slope efficiency. Compared with pumping at 808 nm, into the highly absorbing ⁴F_5/2 level, improvements of laser parameter in absorbed power (increase of slope efficiency, decrease of threshold) were obtained, showing the advantages of the pumping into the emitting level. However, the laser performances expressed vs. the incident power were modest owing to the low absorption efficiency at 879 nm. Thus, increased number of passes of the medium would be necessary in order to match the performances in input power obtained under 808-nm pumping.     

Continuous-wave Nd:GdVO<Subscript>4</Subscript>/LBO laser at 541.5 nm under diode pumping into the emitting level

We report a green laser at 541.5 nm generation by intracavity frequency doubling of a continuous wave (cw) laser operation of a 1083 nm Nd:GdVO₄ laser under 880 nm diode pumping into the emitting level ⁴ F _3/2. A LiB₃O₅ (LBO) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 17.8 W, as high as 2.52 W of cw output power at 541.5 nm is achieved. The optical-to-optical conversion efficiency is up to 14.2%, and the fluctuation of the green output power was better than 3.6% in the given 30 min.     

Simultaneous dual-wavelength operation at 1.06 and 1.34 μm in Nd-vanadate laser crystals

Output performances of Nd-vanadate lasers with simultaneous dual-wavelength emission on the 1.06-μm ⁴ F _3/2 → ⁴ I _11/2 transition and the ⁴ F _3/2 → ⁴ I _13/2 transition at 1.34 μm are discussed. The design uses a linear resonator for emission at 1.06 μm and an L-type folded resonator for the 1.34-μm wavelength, and the ratio between the power of a single wavelength and the total power is adjusted by the choice of the output mirror transmissions. A continuous-wave (CW) Nd:GdVO₄ laser with total output power in the range of 3.9 to 6.8 W and the corresponding ratio of the output power at 1.06 μm to the total output power between 0.26 and 0.97 is realized. It is also shown that in comparison with the pump at 808 nm, the pump directly into the ⁴ F _3/2 emitting level at 879 nm improves the total output power. Furthermore, a Nd:GdVO₄ laser with simultaneous emission at 1.06 and 1.34 μm and that generates also green light at 0.53 μm by intracavity frequency-doubling with LiB₃O₅ (LBO) nonlinear crystal is demonstrated.     

Diode-laser-array end-pumped 14.3-W CW Nd:GdVO4 solid-state laser at 1.06 μm

A diode-laser-array end-pumped efficient CW Nd:GdVO₄ laser at 1.06 μm has been developed. A low-order-mode output power of 14.3 W was obtained at the maximum available pump power of 26 W, giving an optical conversion efficiency of 55% and an average slope efficiency of 62%. The laser output beam quality factor at full pump power was determined to be M²<1.8. It is also shown that only lightly doped Nd:GdVO₄ crystals are suitable for high-power end-pumped lasers. Received: 4 May 1999 / Published online: 29 July 1999     

Q-switched Nd lasers pumped directly into the F3/2 emitting level

The influence of the direct pumping into the ⁴F_3/2 emitting level on the output characteristics of continuous-wave (CW) pumped, passively or actively (acoustooptic, AO) Q-switched Nd lasers is discussed. In case of passive Q-switching by Cr⁴⁺:YAG saturable absorber (SA) crystal, the change of pumping wavelength from 0.81 μm into the highly-absorbing ⁴F_5/2 level to 0.88 μm into the ⁴F_3/2 level of Nd does not modify the energy of the Q-switch pulse, but increases the pulse repetition rate and the laser average power for the same absorbed pump power. This is demonstrated with 0.81 and 0.88 μm CW laser diode-pumped Nd:YAG and Nd-vanadate lasers with average output power in the watt-level range at 1.06 μm. The effect is explained by the control of passive Q-switching by the intracavity photon flux that is influenced by the pump wavelength and by the initial transmission of the SA crystal. On the other hand, it is discussed and experimentally proved that due to the possibility to control externally the frequency of switching, in case of the AO Q-switched Nd laser the change of the pump wavelength from 0.81 to 0.88 μm increases the pulse energy for a fixed frequency, leading to a corresponding increase of the average laser power.     

A high beam quality laser-diode end-pumped Nd:GdVO<Subscript>4</Subscript> slab laser

An 83 W, near-diffraction-limited LD end-pumped Nd:GdVO₄ slab laser with hybrid resonator was presented with the pumping power of 238 W, the slope efficiency and optical-to-optical conversion efficiency were 39.4 and 34.9%, respectively. At the output power of 70 W, beam quality M² factors were 1.2 in stable direction and 1.3 in unstable direction.     

Efficient Nd:Y0.5Gd0.5VO4-KTiOPO4 green laser under diode pumping into the emitting level 4F3/2

We report a green laser at 532 nm generation by intracavity frequency doubling of a continuous wave (cw) laser operation of a 1064 nm Nd:Y_0.5Gd_0.5VO₄ laser under diode pumping into the emitting level ⁴ F _3/2. A KTiOPO₄ (KTP) crystal, cut for critical type-II phase matching at room temperature is used for second harmonic generation (SHG) of the laser. At an incident pump power of 17.8 W, as high as 4.21 W of cw output power at 532 nm is achieved. The optical-to-optical conversion efficiency is up to 23.6%, and the fluctuation of the green output power was better than 2.8% in the given 30 min.     

An efficient high-power 946 nm Nd:YAG planar waveguide laser

To date increasing the output power of Nd:YAG lasers operating on the three-level ⁴F_3/2→⁴I_9/2 transition has been restricted by detrimental thermal effects in the gain medium. Using a double-clad planar waveguide, an efficient 946 nm laser has been demonstrated that produced 35 W of output power with corresponding slope and optical-to-optical conversion efficiencies of 56% and 50%, respectively. Performance and further power-scaling possibilities are discussed.     

26.3-W continuous-wave, diode-double-end-pumped all-solid-state Nd:GdVO4 laser operating at 1.34 μm

A high-power continuous-wave (CW) all-solid-state Nd:GdVO₄ laser operating at 1.34 μm is reported here. The laser consists of a low doped level Nd:GdVO₄ crystal double-end-pumped by two high-power fiber-coupled diode lasers and a simple plane-parallel cavity. At an incident pump power of 88.8 W, a maximum CW output of 26.3 W at 1.34 μm is obtained with a slope efficiency of 33.7%. To the best of our knowledge, this is the highest output at 1.34 μm ever generated by diode-end-pumped all-solid-state lasers.     

Highly efficient continuous-wave intracavity frequency-doubled Nd:YVO4-LBO laser at 457 nm under diode pumping into the emitting level 4F3/2

The continuous-wave high efficiency laser emission of Nd:YVO₄ at the fundamental wavelength of 914 nm and its 457 nm second harmonic obtained by intracavity frequency doubling with an LBO nonlinear crystal is investigated under pumping by diode laser at 880 nm into emitting level ⁴F_3/2. 6.5 W at 457 nm with M ²=1.8 was obtained from a 5-mm-thick 0.4 at.% Nd:YVO₄ laser medium and a 15-mm-long LBO nonlinear crystal in a Z-type cavity for 18.6 W absorbed pump power. An optical-to-optical efficiency with respect to the absorbed pump power was 0.35. Comparative results obtained for the pump with diode laser at 808 nm, into the highly-absorbing level ⁴F_5/2, are given in order to prove the advantages of the 880 nm wavelength pumping.     

Efficient Nd:Y<Subscript>0.36</Subscript>Gd<Subscript>0.64</Subscript>VO<Subscript>4</Subscript>-GdCa<Subscript>4</Subscript>O(BO<Subscript>3</Subscript>)<Subscript>3</Subscript> red laser under diode pumping into the emitting level

We report a red laser at 671 nm generation by intracavity frequency doubling of a continuous wave (cw) laser operation of a 1342 nm Nd:Y_0.36Gd_0.64VO₄ laser under diode pumping into the emitting level ⁴ F _3/2. An GdCa₄O(BO₃)₃ (GdCOB) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 17.8 W, as high as 1.12 W of cw output power at 671 nm is achieved. The optical-to-optical conversion efficiency is up to 6.3%, and the fluctuation of the red output power was better than 3.5% in the given 30 min.     

Diode-pumped passively Q-switched Nd:GdVO4 lasers operating at 1.06 μm wavelength

With a 10-W diode laser to pump Nd:GdVO₄ crystal in a folded cavity, we demonstrated Cr⁴⁺:YAG passively Q-switched Nd:GdVO₄ lasers at 1.06 μm. The maximum average output power of 2.1 W and the highest peak power of 625 W were, respectively, obtained when the initial transmissions of the Cr⁴⁺:YAG crystals were 90% and 80%. Received: 8 September 1999 / Revised version: 30 December 1999 / Published online: 8 March 2000     

A high-power continuous-wave diffraction-limited Nd:GdVO4 laser operating at 1.34 μm

High-power and high beam quality continuous-wave (CW) Nd:GdVO₄ lasers operating at 1.34 μm were experimentally demonstrated. The lasers consisted of either one or two crystals, which were both end-pumped by high-power fiber-coupled diode lasers. With one crystal, the maximum CW output power generated was 8.4 W. When two crystals were used, a maximum output power of 15.7 W was achieved with the incident pump power of 76.2 W, showing a slope efficiency of 26.2% and an optical-to-optical efficiency of 20.6%. The beam divergence at an output power of 15 W was measured to be about two times that of the diffraction limit.     

A comprehensive study of Nd:YAG, Nd:YAlO3, Nd:YVO4 and Nd:YGdVO4 lasers operating at wavelengths of 0.9 and 1.3 μm. Part 1: cw-operation

This paper reports on efficient generation of cw laser radiation at 0.9 and 1.3 μm in different neodymium doped laser hosts. The thermal, mechanical and optical properties as well as the laser performance of Nd:YAG, Nd:YAlO₃, Nd:YVO₄ and Nd:GdVO₄ are studied in numerical simulations as well as in experimental investigations. For example an output power of more than 4.0 W is generated in Nd:YVO₄ at the 914 nm ⁴F_3/2→⁴I_9/2 transition using a pump power of 19 W. In Nd:GdVO₄ more than 6.0 W are obtained at the 1342 nm ⁴F_3/2→⁴I_13/2 laser transition by using a pump power of 19.3 W. The spatial beam quality of both lasers is diffraction limited with an M² value of less than 1.1. PACS  42.70.Hj; 42.55.Xi; 42.60.Pk     

Laser output power over 5 W at 1.06 μm for Nd:GdVO4 single crystal

In this paper, we report the polarization absorption spectra from 400 to 850 nm, polarization emission spectra from 1050 to 1100 nm and laser properties of an Nd:GdVO₄ crystal. An output power of up to 5.29 W at 1.06 μm has been achieved with a 3×3×3 mm Nd:GdVO₄ crystal sample when it is pumped by a cw laser diode.     

Quasi-three-level neodymium vanadate laser operation under polarized diode pumping: theoretical and experimental investigation

We propose a novel technique for pumping neodymium vanadate crystal in ⁴ F _3/2 ?? ⁴ I _9/2 transition with polarized diode light. With a theoretical model on quasi-three-level neodymium vanadate lasers including excited state absorption and energy transfer upconversion effects, the improvement on the laser performance of polarized pumping is evaluated. A maximum output power of 4.8 W in Nd:GdVO₄ 912 nm laser is achieved with the incident pump power of 21.8 W, the maximum output power increases about 85% and the slope efficiency is enhanced to 1.5 times towards the unpolarized pumping under the same condition. This technique is especially suitable for quasi-three-level systems end pumped by high-brightness fiber coupled diode sources associated with short neodymium vanadate crystals.     

Dual-Wavelength and Passively Q-Switched Nd :GdVO4 Lasers Operated at 1.34 μm Under 880 nm Diode Pumping

We report continuous-wave (CW) and passively Q-switched Nd :GdVO₄ lasers on ⁴F_3/2 → ⁴I_13/2 transition directly pumped by an 880 nm diode laser. A widely investigated Nd :GdVO₄ laser at about 1341 nm is operated with a maximum output power of 5.23 W and a slope efficiency of about 30.6%. Using an etalon for wavelength selection, we realize laser emission at about 1344 nm, for the first time to our knowledge, in a Nd :GdVO₄ laser, with a maximum output power of 4.19 W and a slope efficiency of 20.1%. Moreover, we achieve simultaneous dual-wavelength lasing at 1341 and 1344 nm with a maximum output power of 2.27 W and a slope efficiency of 13.5%, respectively. Using V³⁺ :YAG as a saturable absorber, stable Q switching is obtained at about 1341 nm with a maximum average output power of 1.15 W. The pulse width is 52.8 ns at a repetition rate of 279.8 kHz.

     

Laser spectrum of a high power Tm,Ho:GdVO<Subscript>4</Subscript> laser

In this paper, we report a 18.8 W continuous wave and 18.4 W Q-switched diode-pumped cryogenic Tm(5 at %), Ho(0.5 at %):GdVO₄ laser. The pumping source of Tm, Ho:GdVO₄ laser is a fiber-coupled laser diode with fiber core diameter of 0.4 mm, supplying 42 W power at 802.5 nm. For input pump power of 41.9 W at 802.4 nm, the output power of 18.8 W in CW operation, optical-to-optical conversion efficiency of 45% at 2.05 μm and the average output power of 18.4 W in Q-switched operation, optical-to-optical conversion efficiency of 44% at 2.04 and 2.05 μm have been attained. The emission wavelengths of the Tm(5 at %), Ho(0.5 at %):GdVO₄ laser were firstly compared when it worked in CW mode and Q-switched mode.     

Highly efficient Nd:GdVO4/BiBO laser at 456 nm under direct 880 nm diode laser pumping

The continuous-wave high-efficiency laser emission of Nd:GdVO₄ at the second-harmonic of 456 nm obtained by intracavity frequency doubling with an BiB₃O₆(BiBO) nonlinear crystal is investigated under pumping by diode laser at 880 nm into emitting level ⁴F_3/2. About 3.8 W at 456 nm with M² = 1.4 was obtained from a 5 mm-thick 0.4 at.% Nd:GdVO₄ laser medium and a 12 mm-long BiBO nonlinear crystal in a Z-type cavity for 13.9 W absorbed pump power. An optical-to-optical efficiency with respect to the absorbed pump power was 0.274. Comparative results obtained for the pump with diode laser at 808 nm, into the highly-absorbing ⁴F_5/2 level, are given in order to prove the advantages of the 880 nm wavelength pumping.