Effect of nitrogen on some properties of vapor-deposited Nb3Sn

Measurements of critical currentsI _c, transition temperaturesT _c, as well as transmission electron microscopy, scanning electron microscopy and X-ray analysis have established a correlation between critical currentI _c, the tape heating temperature during deposition, and the presence of a fine dispersion of precipitates. As the tape heating current (temperature) increased from 3 to 5 Amps,I _c increased from 20 to 430 Amps/3 mm tape width at 50 kG. A fine precipitate of the Nb₂N phase was observed for highest tape heating temperatures. It is concluded that the precipitate particles may act as flux-pinning centers in the Nb₃Sn layer.     

The angular dependence of critical currents in Nb3Sn — Effect of some preparation conditions I. Experimental and structural investigations

The results of experimental investigations of the angular dependence of critical currents are presented. The samples studied have been prepared by chemical vapour deposition process in reaction atmosphere of different carrier and doping gases. The results have shown that such conditions influence greatly not only the absolute value of the critical current but also the ratioI _c/I _c of the critical currents in magnetic fields parallel and perpendicular to the broad face of the tape. The microstructure studies show that the grain shape and size is changed appreciably when various carrier and doping gases are used.     

Unusual behaviour of conductivity and superconductivity in solid Sn−Xe mixtures

We have measured the normal statedc conductivity , the superconducting transition temperatureT _c and the critical superconducting currentI _c0 of frozen Sn–Xe mixtures in dependence of the Sn atomic fractionc. A new, high-T _c phase is observed forc between 0.58±0.02 and 0.74±0.02. This phase has aT _c-value of about 5.7 K, it shows a strong decrease in and inI _c0 and transforms into disordered Sn during annealing between 15 K and 50 K.It is a pleasure for us to dedicate this paper to Prof. Dr. S. Methfessel on the occasion of his 60^th birthday.This work was supported by the Deutsche Forschungs-gemeinschaft     

High-speed deposition of RE123 film with large current capacity by hot-wall type PLD system

We have studied a hot-wall heating system to produce GdBa₂Cu₃O_y (GdBCO) films with large critical currents (I_c) at a high production rate by a pulsed-laser-deposition (PLD) method. GdBCO films fabricated at a production rate of 30 m/h under the optimized conditions, especially a distance of 95 mm between the target and the substrate (T–S), exhibited high critical current densities (J_c) of about 3 MA/cm² and I_c over 300 A at a thickness of 1–2 μm. Furthermore, long GdBCO tapes prepared by repeated depositions at each tape-passing speed of 80 m/h showed uniform I_c distribution along the longitudinal direction, because the hot-wall system enabled to stabilize temperature within a few degrees at 800 °C. A 170 m long tape with I_c over 600 A was successfully fabricated at a production rate of 16 m/h using a laser power of 360 W.     

Free carrier scattering mechanism in Bi2Se3 crystals

The single valley model proposed byKöhler andLandwehr is used for the calculation of transport parameters corresponding to pure Bi₂Se₃ crystals. From the measurements of transmission, reflectivity and the Hall constant the effective masses are determined,m _c =0·13m ₀ andm _c=0·56m ₀; using a simplification described in the paper the Fermi level is calculated to lie 0·14 eV above the bottom of the conduction band. This result allows us to conclude that a mixed mechanism of free carrier scattering exists inn-Bi₂Se₃ crystals, viz., the scattering by acoustic phonons prevails contributing about 75% and the scattering on ionized impurities contributes the remaining 25%. This result applies to pure Bi₂Se₃ crystals with free electron concentration 2×10¹⁹cm^–3.     

Temperature dependence of the critical current density in Y-Ba-Cu-O thin films

We present a study of the temperature dependence of the critical currentJ _c of several dc magnetron sputtered thin Y-Ba-Cu-O films on single crystalline SrTiO₃, ZrO₂ and Al₂O₃ substrates. Near the critical temperature T_c it is found thatJ _c(1–T/T_c)ⁿ withn=3 for the SrTiO₃ and ZrO₂ substrates, whilen=1·3 for the Al₂O₃ substrate. The temperature dependence in our samples approximately agrees with standard theories for weak links or with the Ambegaokar-Baratoff equation.     

Microprocessing of superconducting Nb3Sn tapes by electron-beam microetching

The unsuitable mechanical properties of Nb₃Sn (its brittleness) make the production of a conductor in the required shape and dimensions very difficult. A method has been proposed and experimentally investigated by which the existing superconducting Nb₃Sn tape could be modified to obtain intrinsically stable superconductor. The required filamentation of commercial Nb3Sn conductor is manageable by electron-beam microetching. The achieved results could serve as a starting point for the construction of a special electron-beam machine. Such device may work in connection with the Nb₃Sn producing apparatus.The authors are grateful to I.Hlásnik for the encouraging discussions, to V.ernuko for providing us with the Nb₃Sn vapour deposited tape and to S.Koina for performing the microanalysis.     

Static characteristics of Josephson interferometers

This investigation deals with the range in operating currents for which a Josephson interferometer, sometimes also referred to as Superconducting QUantum Interference Device (SQUID), may remain in the zero-voltage Josephson condition. An interferometer consists of one or more inductive loops each of which contains two Josephson junctions or other weak links. Two types of current are considered. Gate currentI _gpasses the junctions in parallel. Control currentI _cgenerates magnetic flux via inductive coupling in the loops. Zero-voltage operation is possible within certain areas of theI _g,I _cplane. These areas are manifestations of flux-quantum states and their boundary lines are referred to as static characteristics. In view of the nonlinearity of the constituting equations, not all their formal solutions are physically realizable. A stability analysis yields criteria which permit the identification of realizable operating conditions. The static characteristics comprise operating conditions where the limit of stability is reached. To obtain the static characteristics, linearized equations may be utilized if theLI _o product, a measure for the size of an interferometer, is large compared to the flux quantumΦ ₀, whereL is the inductance per loop, andI _o the maximum Josephson current per junction. As a general method of solving system of transcendental equations, continuation is discussed. The utilization of continuation for obtaining interferometer characteristics is explained. It is shown that some changes in the gate-current feed arrangement are equivalent to shearing the characteristics in theI _g,I _cplane. Analytical results are given on extrema, inflexion points, and singularities in the shape of cusps which conceptually relate to the existence and connectivity of flux-quantum states. Experimental static characteristics are presented on two-and four-junction interferometers. They are in agreement with characteristics computed on the basis of simple lumped circuit models. Relevant circuit parameters are obtained from the experimental characteristics.     

Temperature dependence of distribution of cations in MnFe2O4

A neutron diffraction investigation revealed that the degree of inversiony in quenched samples of MnFe₂O₄ varied from 0·06 for samples annealed at 330 °C to a constant value 0·22 for samples annealed at 600 °C and higher temperatures. On the other ahnd, measurements on samples at elevated temperatures showed further increase ofy above 600 °C. The reversibility of the temperature changes ofy was confirmed.The authors express their thanks to Dr. Z.ima for stimulating discussions.     

The effect of Sn segregation at grain boundary on the steady-state creep of Cu-10 wt % Sn alloy

The effect of Sn solutes segregating into grain boundaries on the steady-state creep characteristics was studied for wires of a Cu-10 wt % Sn alloy having various grain diameters,d. The creep tests were performed for samples in the-phase in the temperature range: (0·5–0·58 T_m). The steady state creep rate, _s, was found to vary linearly withd. The variation in the stress sensitivity parameter,m, was found to be much less appreciable for large grains (>50m). Activation energy calculation showed that two competitive mechanisms are operating for creep deformation, namely, dislocation climb and viscous motion of matrix dislocations due to dragging of Sn atmosphere. A value of 6·74 kJ/mol was obtained for the binding energy between a Sn atom and the dislocation, while the binding energy between a vacancy and the Sn atom was found to be 33·71 kJ/mol.     

Configurational energies of different A7B types of the long-range order in Fe-Si alloys

In order to examine the existence of the long-range order of A₇B types in Fe-Si alloys with composition less than 12·5 at.% Si, the configurational energies of several superstructures in b.c.c. alloys with the cubic elementary cell having the lattice parameter 2a are calculated on the basis of a simple model with a pairwise interaction between atoms extending to the third neighbours. From the proposed model it follows that the superstructure of A₇B type suggested byFallot can be expected if the interaction parameter for the third neighboursv ₃>0. On the other hand, the two-phase structure (DO₃ order and pure Fe) will be favoured by the alloy crystal ifv ₃<0.The author is indebted to Dr. F.Kroupa and Dr. A.Gemperle for stimulating discussions.     

Electrical properties and defect model of tin-doped indium oxide layers

Tin-doped In₂O₃ layers were prepared by the spray technique with doping concentrationsc _Sn between 1 and 20 at. % and annealed at 500 °C in gas atmospheres of varying oxygen partial pressures. The room-temperature electrical properties were measured. Maximum carrier concentrationsN=1.5×10²¹cm^–3 and minimum resistivities =1.3×10^–4 cm are obtained if the layers are doped withc _Sn9 at. % and annealed in an atmosphere of oxygen partial pressurep _O2 10^–20 bar. At fixed doping concentration, the carrier mobility increases with decreasing oxygen pressure. The maximum obtainable mobility can be described in terms of electron scattering by ionized impurities. From an analysis of the carrier concentration and additional precision measurements of the lattice constants and film thicknesses, a defect model for In₂O₃:Sn is developed. This comprises two kinds of interstitial oxygen, one of which is loosely bound to tin, the other forming a strongly bound Sn₂O₄ complex. At low doping concentrationc _Sn4 at. % the carrier concentration is governed by the loosely bound tin-oxygen defects which decompose if the oxygen partial pressure is low. The carrier concentration follows from a relationN=K ₁ ·p _O2 ^–1/8 ·(3 ×10¹⁰ × c_Sn –N)^1/4 with an equilibrium constantK ₁=1.4×10¹⁵ cm^–9/4bar^1/8, determined from our measurements.     

Potential of Nd:YAG pulsed laser deposition method for coated conductor production

A Nd:YAG laser is environmentally safe and economical with no poisonous or hazardous gases and no expensive gases. We prepared Y123 films by using the fourth harmonic Nd:YAG pulsed laser deposition (PLD) method and optimized the deposition conditions on MgO single crystalline substrates and IBAD-MgO substrates for Y123 coated conductor. We found that the optimal deposition conditions acquired bi-axially aligned Y123 films on both substrates with T_c ∼ 90 K and J_c > 1 MA/cm² at 77 K in self-field. For obtaining high I_c, we fabricated thick Y123 films on both substrates and the maximum I_c per 1 cm in width reached 186 A/cm-width on the IBAD-MgO substrate. Interestingly, there were no a-axis oriented grains within the films up to 1.8 μm thick. This might be an especial feature of the Nd:YAG-PLD method. We believe that the Nd:YAG-PLD method is promising method for RE123 coated conductor production.     

Growth and basic crystallographical parameters of cytosine hydrochloride single crystals

Single crystals of cytosine hydrochloride (C₄H₅N₃O.HCl, mol. weight 147·56) weighing about 4 g were grown using the technique of cooling the solution. The composition of the crystals and some of their properties are described and basic crystallographical parameters were determined by means of a reflection two-circle goniometer and X-ray diffraction methods (monoclinic system, 2/m, P2₁/c).The authors thank Mr. R.Wágner for refractive index measurements and Ing. A.Slivkaniová for performing the analyses.     

Transport properties of long monofilamentary Bi(2223) tapes

Summary Monofilamentary Bi(2223) tapes withJ _c(77 K, 0 tesla) up to 30 000 A/cm² have been prepared by cold rolling using the powder-in-tube method. An optimization of the precursor powders has led to a higher phase purity after the reaction heat treatment. The deformation process has been optimized in order to increase the oxide density and to reduce sausaging effects on the oxide thickness. The transport properties of these tapes have been studied in a wide range of temperature (4.2K-T _c) and magnetic fields (up to 28 tesla). The critical-current values at 77 K fields of 0.5 T and 1 T parallel to the tape surface are 10 000 A/cm² and 5400 A/cm², respectively. At 4.2 K theJ _c value decreases from 1.6·10⁵ A/cm² at 0 T to 6·10⁴ A/cm² at 15 T. At fields higher than 15 tesla a very low field dependence ofJ _c has been found, regardless of the tape orientation. Transport properties have also been studied by cutting small sections of the tape in order to investigate the local critical-current distribution. It has been found that, even in rolled tapes of good quality (J _c (77 K, 0 T)>20000 A/cm²), theJ _c distribution is homogeneous: the critical current density increases gradually from the centre of the tape to the sides, the latter exhibiting much higherJ _c (46000 A/cm²) than in the centre (18000 A/cm²). Paper presented at the ?VII Congresso SATT?, Torino, 4–7 October 1994.     

Some photoelectric properties of the nucleic acid bases in thin layers

The current-voltage characteristics of dark-conductivity and photoconductivity, the lux-ampere characteristics, the spectral dependence of photoconductivity and the relative quantum efficiency of vacuum deposited layers of adenine, thymine, uracil and cytosine were investigated at room temperature. The following values of photoconductivity thresholdE _th were obtained: 3·81 ±± 0·1 eV for adenine; 3·69±0·1 eV for thymine; 3·80±0·1 eV for uracil; 3·77 ± 0·1 eV for cytosine.It may be shown thatE _th is most probably the threshold value for intrinsic photoconductivity of NA bases and, consequently, corresponds to the first electron conductivity levelE _c or at leastE _c >E_th. The possible energy diagram of the NA bases is evaluated.     

The role of the surface depression of the pair potential on the Josephson and quasi-particle tunnelling in high-T c superconductors

Summary We discuss the influence of the intrinsic surface depression of the order parameter on the temperature dependence of the Josephson critical currentI _c(T) and, tentatively, on the quasi-particle tunnelling conductance in a superconductor with a very short coherence length. The comparison with the experiments shows that the presence of a surface-depressed pair potential can explain the large deviations of theI _c(T) from the ideal BCS behaviour that we recently observed in Bi₂Sr₂CaCu₂O_8+x Josephson break junctions and could mimic the presence of a broadening in the Superconductor-Insulator-Normal tunnelling conductance of the same high-T _c superconductor. Paper presented at the ?VII Congresso SATT?, Torino, 4–7 October 1994.     

Internal conversion of the 84·23 keV transition in170Yb

The conversion coefficient _K=1·48±0·07 and the total conversion coefficient = =8·05±0·2 have been determined by means of the 4 scintillation counter.The authors are obliged to Mrs.Boukalov, Mrs.Vladykov and MissStíteská for the assistance in the elaboration of this paper.     

Phase diagram and LPE growth of strongly Sn- and Te-doped InGaAs

Sn and Te are used as n-type dopants in LPE In_0.53Ga_0.47 As contact layers, and carrier concentrations up to 2.2·10¹⁹ cm^–3 are obtained for both dopants. The distribution coefficients are k_Sn=(1.55±0.10)·10^–3 and k_Te0.11, respectively. With Sn a better control of the doping level is achieved than with Te, but the large amount of Sn necessary strongly affects the phase diagram. In order to facilitate the growth of InGaAs:Sn, the phase equilibria in the system In-Ga-As-Sn near 600° C are established. The liquid interaction parameters (Ga-Sn) and (As-Sn) are determined as 700 and -2050 cal/mole, respectively.     

Properties of LiZn x V2−x O4 and LiMg x V2−x O4 mixed oxides

The phase composition of the mixed oxides, series LiMe _x V_2–x O₄, where Me=Zn, Mg, was studied using X-ray analysis. The minor phases present in the investigated samples together with the basic spinel phase were determined as Li₃VO₄ and Zn₂V₂O₇ or Mg₂V₂O₇ respectively. Their presence is caused by the tendency of tetravalent vanadium ions to the disproportionation. For the compositionsx=0·375 were determined the quantitative phase compositions. The lattice constant of the spinel phase is linearly changing according to Vegard's rule, for the zinc series in the range 0x0·375 and for the magnesium series in the range 0xs0·25. Further substitution in magnesium series caused tetragonal deformation of the cubic spinel lattice.The author is indebted to Dr. A.Bergstein for helpful discussions and to Mrs. E.Hrubá for technical assistance.