含氮磷酸锂薄膜在空气中的稳定性

利用射频(RF)磁控溅射方法制备了含氮磷酸锂(LiPON)薄膜. 采用SEM、XRD、XPS等技术以及交流阻抗法和电位线性扫描法, 研究了空气湿度对LiPON薄膜形貌、组成和性能的影响. 结果表明, LiPON薄膜在湿度为40%的空气环境中放置24 h后, 将发生明显的水解反应, 使LiPON薄膜表面形貌变得疏松、局部突起; PH3和NH3的产生, 使薄膜中磷元素和氮元素含量减少, 而Li2CO3的生成, 则使薄膜中碳元素和氧元素含量有明显的增加. LiPON电解质薄膜形貌和组成的变化, 造成了薄膜电化学性能的严重恶化.     

气相合成SnO2超微粒薄膜研究

用直流气体放电活化反应蒸发法在玻璃基片上沉积的SnO2超微粒薄膜,研究其过程中各工艺参数对薄膜结构的影响及作用机理.结果表明, SnO2超微粒薄膜粒径随氧分压增加而增大;蒸镀时间的延长有助于SnO2的生成,也使薄膜发生晶化;而增加放电电压,则薄膜出现外延单晶生长趋势.     

NiO阳极薄膜制备与电化学性能

NiO阳极薄膜制备与电化学性能;NiO薄膜;真空蒸发;热氧化     

Ag改性纳米ZnO薄膜及光催化活性

采用溶胶-凝胶法和光还原沉积贵金属法结合制备出Ag改性的纳米ZnO薄膜。利用FESEM、XPS、ESR、UV-Vis分析了纳米Ag-ZnO薄膜的表面形貌、表面组成和光谱特征。FESEM分析表明银在纳米ZnO薄膜表面形成原子簇而没有形成均匀覆盖层。XPS分析表明负载在纳米ZnO薄膜表面的银以Ag⁰形式存在; 相对于纳米ZnO薄膜, 纳米Ag-ZnO薄膜中晶格氧的含量有所下降,而表面羟基氧和吸附氧的含量显著增加。纳米Ag-ZnO薄膜的ESR峰强比纳米ZnO薄膜大,表明纳米Ag-ZnO薄膜中束缚单电子的氧空位的浓度高于纳米ZnO薄膜。UV-Vis分析纳米Ag-ZnO薄膜的紫外可见吸收光谱可能是纳米银粒子与纳米ZnO薄膜共同作用的结果。以甲基橙为模拟污染物,考察了纳米Ag-ZnO薄膜的光催化活性以及银沉积量对催化剂活性的影响。光催化降解结果表明,银的沉积量为0.018 2 mg·cm^-2的纳米Ag-ZnO薄膜的光催化活性最高,在紫外光照射3 h后甲基橙降解率约为78%,而纳米ZnO薄膜约为62%。     

TiO2光催化薄膜在陶瓷器具上抗菌效果的研究

抗菌薄膜;TiO2光催化薄膜在陶瓷器具上抗菌效果的研究     

LaNiO3衬底上Pb(ZrxTi1－x)O3铁电薄膜及梯度薄膜的制备和研究

报道了在镍酸镧 (LaNiO₃, 简称LNO)衬底上锆钛酸铅 [Pb(Zr_xTi_1－x)O₃, 简称PZT]铁电薄膜及其成分梯度薄膜的结构、介电性能、铁电性能以及热释电性能. 首先通过金属有机化合物热分解(MOD)法在Si(100)基片上制备出LaNiO₃, 薄膜, 再通过溶胶-凝胶(sol-gel)法, 在LNO/Si(100)衬底上制备出Pb(Zr_0.80Ti_0.20)O₃, [PZT(80/20)]和Pb(Zr_0.20Ti_0.80)O₃, [PZT(20/80)]铁电薄膜及其成分梯度薄膜. 经俄歇微探针能谱仪(AES)对制备的梯度薄膜进行了成分深度分析, 结果证实成分梯度的存在. 经XRD分析表明, 制备的梯度薄膜为四方结构和三方结构的复合结构, 但其晶面存在一定的结构畸变. 经介电频谱测试表明, 梯度薄膜的介电常数比每个单元的介电常数要大, 但介电损耗相近. 在10 kHz下, 梯度薄膜的介电常数和介电损耗分别为317和0.057. 经电滞回线的测试表明, 梯度薄膜的剩余极化强度比每个单元都大, 而矫顽场却明显较小. 梯度薄膜的剩余极化强度和矫顽场分别为29.96 μC•cm^-2 和54.12 kV•cm^－1. 经热释电性能测试表明, 室温下梯度薄膜的热释电系数为5.54×10-8 C•cm^－2•K^－1, 高于每个单元的热释电系数.     

LiBPON薄膜电解质的制备及电化学性能研究

应用磁控溅射法在N2气氛中制备LiBPON薄膜电解质,研究薄膜性能与沉积条件的关系,优化其制备条件.扫描电镜图显示其表面平整均匀致密,X射线衍射及交流阻抗测试分别表明该薄膜呈非晶态,室温离子电导率随溅射功率增大而减小,随N2压力增大而增大,最高达3.5×10-6S/cm;薄膜的沉积速率随溅射功率增大而增大,随N2压力增大而减小.N的结合对电解质的电化学性能有明显改善,作为薄膜锂电池电解质有良好的应用前景.     

具有低表面自由能有机介电薄膜的制备及表征

通过自主开发的有机镀膜技术在Mg-Mn-Ce镁合金表面制备了具有低表面自由能和较高介电常数的有机纳米薄膜. 利用X射线光电子能谱(XPS)分析了表面有机镀膜过程的反应机理, 借助傅里叶变换红外(FT-IR)光谱进一步确认表面有机膜层的存在, 采用接触角测量仪测定了有机薄膜的蒸馏水接触角和表面自由能变化, 使用椭圆偏振光谱仪研究了薄膜的厚度, 并借助精密阻抗分析仪评价了薄膜的介电性能. 有机镀膜后镁合金表面形成了一层纳米级厚度的有机薄膜, 接触角从基体的70.8°上升至150.5°, 表面自由能从基体的37.96 mJ·m^-2降低到1.57 mJ·m^-2, 镁合金表面从亲水性转变为疏水性; 薄膜的厚度和质量随有机镀膜时间延长先增加后有所减小, 在镀膜20 min时薄膜性能最佳, 此时膜重达到23.5 μg·cm^-2, 膜厚最大为147.48 nm, 其相对介电常数也达到最大, 在1 kHz下可达24.922.     

石墨烯/银复合薄膜的制备及表征

采用静电自组装技术,通过交替沉积聚(二烯丙基二甲基氯化铵)(PDDA)(或硝酸银)和氧化石墨烯,制备氧化石墨烯/PDDA薄膜和氧化石墨烯/硝酸银复合薄膜。然后在600℃下通入氩气和氢气进行气氛还原得到石墨烯薄膜和石墨烯/银复合薄膜。采用AFM、SEM、XPS、UV-Vis以及四探针电阻仪等对薄膜结构及性质进行表征。结果表明,通过静电自组装法可以获得生长均匀的薄膜。对比于相同自组装次数的石墨烯薄膜,石墨烯/银复合薄膜具有更好的透光性和更低的薄膜方块电阻。在λ=500 nm时,四层石墨烯/银复合薄膜的透过率为85%左右,而石墨烯薄膜的透过率为72%左右;石墨烯薄膜的方阻为161.39 kΩ.□-1,而石墨烯/银复合薄膜的方阻为99.11 kΩ.□-1。     

低介电常数介质薄膜的研究进展

用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI) 的互连延迟、串扰和能耗。从介质极化的原理出发,揭示了开发低介电常数介质薄膜的可能途径;综述了低介电常数介质薄膜的制备方法、结构与性能表征、工艺兼容性等领域的最新进展。     

Epitaxial growth of AlN films on single-crystalline Ta substrates

We have demonstrated the first epitaxial growth of AlN films on single-crystalline Ta substrates by the use of a low-temperature growth technique based on pulsed laser deposition (PLD). Although previous AlN films grown on Ta(100) and (111) substrates have exhibited quite poor crystallinity, an epitaxial AlN(0001) film with an in-plane epitaxial relationship of AlN[112¯0]//Ta[001] has been obtained on a Ta(110) substrate at a growth temperature of 450 °C. We found that the full-width at half-maximum values for the crystal orientation distribution in the tilt and twist directions of the AlN film were 0.37° and 0.41°, respectively. Grazing-incidence X-ray reflection (GIXR) and X-ray photoelectron spectroscopy (XPS) measurements have revealed that the AlN/Ta heterointerface is quite abrupt, and that its abruptness remains unchanged even after annealing at 1000 °C.     

Characterization of AlN thin film prepared by reactive sputtering

AlN films with a preferred orientation <002> have been prepared on Si(100) substrates via DC reactive magnetron sputtering. X‐ray diffraction, atomic force microscopy, scanning electron microscopy, ellipsometer, and ultraviolet–visible–near infrared (UV–VIS–NIR) spectrophotometer were used to investigate the structural and optical properties of the AlN thin films. When the sputtering pressure is about 0.4 Pa, the flow ratio between nitrogen and argon is 1 : 3, and the growth temperature is 400 °C, the transmissivity of the AlN film is about 90% in the visible and near‐infrared region, and its optical band gap is ~5.84 eV. The refractive index of the thin films is about 2.05, which is lower than the bulk AlN refractive index. Copyright © 2016 John Wiley & Sons, Ltd.     

Optimization of large area pulsed laser deposition of YBaCuO thin films by SNMS depth profiling and rutherford backscattering

The scaling up of established deposition techniques like pulsed laser deposition (PLD) to larger substrate diameter is a main condition for the technological application of high-T_c superconducting (HTSC) thin films. SNMS depth profiling and RBS have been used to control the homogeneity of film thickness and stoichiometry of Au/YBaCuO/CeO₂ thin film systems deposited on 3-inch sapphire wafers by PLD. A systematic dependence has been found for the relative SNMS sensitivity factors (RSF) on the structural state of YBaCuO. Therefore, a calculation of the composition of the epitaxial YBaCuO thin films is not possible using RSF determined from polycrystalline YBaCuO target material. The interdiffusion of thin films and substrate has been investigated in dependence on the deposition temperature by SNMS depth profiling. The obtained homogeneity of film thickness and stoichiometry over the entire 3-inch diameter proofs the suitability of PLD for in-situ deposition of 3-inch wafers by YBaCuO thin film systems for microwave applications.     

Magnetic characteristics of Fe4N epitaxial films grown by halide vapor phase deposition under atmospheric pressure

The thin films of Fe₄N, which were prepared by atmospheric pressure halide vapor phase deposition, were epitaxially grown on a MgO(100) substrate and have cubic structure with good crystallinity. The magnetic characteristics of Fe₄N epitaxial film show soft magnetic behavior under various temperatures and various external magnetic field directions. As the temperature is decreased, the saturation magnetization increases. Also, the magnetized behavior is observed when the magnetic field is applied parallel to the film plane. It was found that the magnetic moments of Fe₄N epitaxial film are facing parallel to the film plane.     

Structural properties of lithium thio-germanate thin film electrolytes grown by radio frequency sputtering

In this study, lithium thio-germanate thin film electrolytes have been successfully prepared by radio frequency (RF) magnetron sputtering deposition in Ar gas atmospheres. The targets for RF sputtering were prepared by milling and pressing appropriate amounts of the melt-quenched starting materials in the nLi(2)S + GeS(2) (n = 1, 2, and 3) binary system. Approximately 1 μm thin films were grown on Ni coated Si (Ni/Si) substrates and pressed CsI pellets using 50 W power and 25 mtorr (～3.3 Pa) Ar gas pressures to prepare samples for Raman and Infrared (IR) spectroscopy, respectively. To improve the adhesion between the silicon substrate and the thin film electrolyte, a sputtered Ni layer (～120 nm) was used. The surface morphologies and thickness of the thin films were determined by field emission scanning electron microscopy (FE-SEM). The structural properties of the starting materials, target materials, and the grown thin films were examined by X-ray diffraction (XRD), Raman, and IR spectroscopy.     

Influence of metal electrodes on c‐axis orientation of AlN thin films deposited by DC magnetron sputtering

Nanocrystalline aluminum nitride (AlN) thin films were deposited on two types of metallic seed layers on silicon substrates, (111) textured Pt and (110) Mo, by reactive DC magnetron sputtering at low temperature (200 °C). Both textured films of Pt and Mo promote nucleation, thereby improving the crystallinity and epitaxial growth condition for AlN thin films. The deposited films were examined by X‐ray diffraction, scanning electron microscopy and atomic force microscopy techniques. The results indicated that the preferred orientation of crystallites greatly depends upon the kinetic energy of the sputtered species (target power) and seed layers used. Furthermore, AlN thin films with c‐axis perpendicular to the substrate grew on both types of metal electrodes at all power levels larger than 100 W. By comparing the structural properties and compressive stresses at perfect c‐axis orientation conditions, it is evident that AlN films deposited on (110) oriented Mo substrates exhibited superior properties as compared with Pt/Ti seed layers. Furthermore, less values of compressive stresses (?3 GPa) as compared with Pt/Ti substrates (?7.08 GPa) make Mo preferentially better candidate to be employed in the field of suspended Micro/Nano ‐ electromechanical systems (MEMS/NEMS) for piezoelectric devices. Copyright © 2017 John Wiley & Sons, Ltd.     

Optical constants,dispersion energy parameters and dielectric properties of ultra-smooth nanocrystalline BiVO4 thin films prepared by rf-magnetron sputtering

BiVO₄ thin films have been prepared through radio frequency (rf) magnetron sputtering of a pre-fabricated BiVO₄ target on ITO coated glass (ITO-glass) substrate and bare glass substrates. BiVO₄ target material was prepared through solid-state reaction method by heating Bi₂O₃ and V₂O₅ mixture at 800 °C for 8 h. The films were characterized by X-ray diffraction, UV–Vis spectroscopy, LCR meter, field emission scanning electron microscopy, transmission electron microscopy and atomic force microscopy. BiVO₄ thin films deposited on the ITO-glass substrate are much smoother compared to the thin films prepared on bare glass substrate. The rms surface roughness calculated from the AFM images comes out to be 0.74 nm and 4.2 nm for the films deposited on the ITO-glass substrate and bare glass substrate for the deposition time 150 min respectively. Optical constants and energy dispersion parameters of these extra-smooth BiVO₄ thin films have been investigated in detail. Dielectric properties of the BiVO₄ thin films on ITO-glass substrate were also investigated. The frequency dependence of dielectric constant of the BiVO₄ thin films has been measured in the frequency range from 20 Hz to 2 MHz. It was found that the dielectric constant increased from 145 to 343 at 20 Hz as the film thickness increased from 90 nm to 145 nm (deposition time increased from 60 min to 150 min). It shows higher dielectric constant compared to the literature value of BiVO₄.     

Structural and Optical Properties of ZnO Films with Different Thicknesses Grown on Sapphire by MOCVD

IntroductionZnOis one of the most promising materials for pro-ducing ultraviolet laser at room temperature because ofits wide direct band gap(Eg=3.37eV)and large ex-citonic binding energy of60meV.Recently,much at-tention has been paid to short-wavelength …     

Crystallographic and morphological characterization of thin pentacene films on polycrystalline copper surfaces

The degree of crystallinity, the structure and orientation of crystallites, and the morphology of thin pentacene films grown by vapor deposition in an ultrahigh vacuum environment on polycrystalline copper substrates have been investigated by x-ray diffraction and tapping-mode scanning force microscopy (TM-SFM). Depending on the substrate temperature during deposition, very different results are obtained: While at 77 K a long-range order is missing, the films become crystalline at elevated temperatures. From a high-resolution x-ray-diffraction profile analysis, the volume-weighted size of the crystallites perpendicular to the film surface could be determined. This size of the crystallites increases strongly upon changing temperature between room temperature and 333 K, at which point the size of individual crystallites typically exceeds 100 nm. In this temperature region, three different polymorphs are identified. The vast majority of crystallites have a fiber texture with the (001) net planes parallel to the substrate. In this geometry, the molecules are oriented standing up on the substrate (end-on arrangement). This alignment is remarkably different from that on single-crystalline metal surfaces, indicating that the growth is not epitaxial. Additionally, TM-SFM images show needlelike structures which suggest the presence of at least one additional orientation of crystallites (flat-on or edge-on). These results indicate that properties of thin crystalline pentacene films prepared on technologically relevant polycrystalline metal substrates for fast electronic applications may be compromised by the simultaneous presence of different local molecular aggregation states at all temperatures.     

Nanocrystalline Diamond Thin Films Synthesis on Curved Surface

Thin films of curved surface nanocrystalline diamond (CS-NCD) are a category of important materials. However, the development of such materials is still a highly challenging task. Here we present a novel approach to synthesizing CS-NCD thin films deposited on non-spherical surfaces of molybdenum substrate using direct current plasma jet chemical vapor deposition. A special cooling system was designed and applied to ensure uniform substrate temperature. It is demonstrated from simulation and experimental results that this system is favorable for the production of thin films. The results show that the quality of CS-NCD thin films depends on the selection of optimal values of parameters including CH₄ concentration, substrate temperature, and chamber pressure. If the CH₄ concentration and/or the substrate temperature is too high or low, it results in non-diamond phase or micron-crystalline diamond thin films. Synthetic CS-NCD thin films using the proposed method have a smooth surface and uniform thickness. The average grain size and the mean surface roughness are approximately 30 and 4.3 nm respectively. Characteristics of CS-NCD thin film spectra comprised of the full width at half maximum with broad Raman peaks around 1,140 and 1,480 cm^?1, confirming the presence of the NCD phase.