e+e－湮没轻夸克事例的奇异抑制

按照夸克组合模型, 通过分析给出e⁺e^－→q₀q₀→h′s过程轻味夸克jet事例中各种粒子的产生几率以及相对比值. 给出奇异、非奇异粒子多重数比率γ与奇异抑制因子λ之间的关系, 不需要假设奇异抑制因子改变, 能够解释粒子比率增大的实验.     

增加光子奇偶q相干态的高阶压缩效应

通过数值计算研究了增加光子奇q相干态a_q^+m|α>_q^o和增加光子偶q相干态a_q^+m|α>_q^e的高阶压缩效应.结果表明:当q较小时,态a_q^+m|α>_q^o和a_q^+m|α>_q^e都能呈现出强烈的奇次方阶压缩效应,但无偶次方阶压缩效应,而且奇次方阶压缩随m的增大而增强.当m=0时a_q^+m|α>_q^o和a_q^+m|α>_q^e为光场振幅偶次幂的最小测不准态,但当m≠0时它们不是光场振幅偶次幂的最小测不准态.     

e＋e－湮没为轻夸克对的强子产率

通过分析e^＋e^－→q₀q₀→h′s过程轻味夸克jet事例中电磁与强作用激发夸克的平均产生几率,得出初始轻味uds夸克jet中各种粒子的产率与初始夸克味道和夸克对数N的依赖关系.进一步给出领头强子的相对产率,同样明显与初始夸克味道和夸克对数N有关.这种依赖关系在低能区更明显     

Υ三胶子碎裂粒子产率的普适质量关系

发现Υ→3g三胶子碎裂的末态强子多重数满足与e⁺e^－→q₀q₀事例相同的普适质量关系,表明胶子、夸克碎裂成强子时有相同的规律性.不需引入任何其它假定,就自然解释了Υ→3g三胶子碎裂末态重子多重数增高的重要特征.     

BEPC共振事例的碎裂特性

发现e⁺e^－→J/ψ→3g三胶子碎裂的末态强子多重数〈n〉满足与e⁺e^－→q₀q₀连续区事例相同的普适质量关系〈n〉=A2S+12I+1exp(–bm2).表明胶子、夸克碎裂成强子时有相同的规律性.同样可以把参数A解释为直生介子、重子多重数〈M〉+〈B〉.虽然对Υ→3g与连续区事例进行比较,末态重子多重数增高2.5倍,但是利用我们对J/ψ→3g共振区的计算研究,没有发现J/ψ→3g事例有类似的特征.     

干涉项对e+e－→qq+ng两种色连接几率的影响

传统高能e⁺e^－→hadrons事例产生器普遍采用大N_c近似,使色单态链产生几率达到100%而色分离态几率为0.本文在Nc=3的真实情况下,研究了干涉项中颜色部分和动量部分的来源及性质后发现,对e⁺e^－→qq+ng部分子末态中胶子数2,3,干涉项使色单态链产生几率进一步下降到67%,58%,而n=2时的色分离态几率则增大至不考虑干涉项的2倍.由上推断当胶子数n更大时色单态链几率将远小于1,色分离态几率将更显著增加.     

e+e－湮没中的胶子碎裂

本文假定e⁺e^－湮没时产生的胶子的强子化,胶子首先劈裂成一对等效的夸克、反夸克对.夸克之间的色相互作用,碎裂成末态强子.由此计算的e⁺e^－→3jet事例中的带电粒子多重数,胶子与夸克jet中多重数比率,以及e⁺e^－三胶子事例中的重子比率,都与实验结果一致.解释了e⁺e^－→3jet末态粒子的角分布.     

多模复共轭虚偶相干态光场的等阶N次方Y压缩与等阶N次方H压缩

本文利用新近建立的多模压缩态理论,详细研究了一种新型的多模复共轭虚偶相干态光场|Ψ_i,e^*(2)>_q的广义非线性等阶N次方Y压缩与等阶N次方H压缩特性.结果发现:1)当压缩阶数N为奇数时,态Ψ_i,e^*(2)>_q在一定条件下总可呈现出周期性变化的、任意阶的等阶N次方Y压缩效应;当腔模总数q与压缩阶数N两者之乘积q·N为奇数时,则在一定条件下态|Ψ_i,e^*(2)>_q又可呈现出周期性变化的、任意阶的等阶N次方H压缩效应.2)态|Ψ_i,e^*(2)>_q与多模偶相干态光场|Ψ_i,e^*(2)>_q与多模虚偶相干态光场|Ψ_i,e⁽²⁾>_q的压缩幅度、压缩条件和压缩特征等完全相同.这一结果再次从理论上证实了多模压缩光中的确存在着“相反压缩”和“压缩简并”这两类新的物理现象.     

一种新型的多模虚偶相干态光场的等阶N次方Y压缩与等阶N次方H压缩

本文利用新近建立的多模压缩态理论,详细研究了一种新型的多模虚偶相干态光场|Ψ_i,e⁽²⁾>_q的广义非线性等阶N次方Y压缩与等阶N次方H压缩特性.结果发现:1)态|Ψ_i,e⁽²⁾>_q是一种典型的多模非经典光场,当压缩阶数N为奇数时,态|Ψ_i,e⁽²⁾>_q在一定条件下总可呈现出周期性变化的、任意阶的等阶N次方Y压缩效应;当腔模总数q与压缩阶数N这两者的乘积q·N为奇数时,则在一定条件下态|Ψ_i,e⁽²⁾>_q又可呈现出周期性变化的、任意阶的等阶N次方H压缩效应.2)态|Ψ_i,e⁽²⁾>_q的等阶N次方Y压缩与等阶N次方H压缩效应这两者的压缩程度和压缩深度分别与几率幅γ_q^(e)、压缩参数R_j、各模的初始相位φ_j(或者各模的初始相位和 φ_j)、压缩阶数N以及腔模(指纵模)总数q等呈较强的非线性关联,等阶N次方H压缩效应与上述诸参量之间的非线性关联程度要比等阶N次方Y压缩效应的更强.3)多模虚偶相干态光场|Ψ_i,e⁽²⁾>_q与多模偶相干态光场|Ψ_,e>_q及多模复共轭偶相干态光场|Ψ*_,e⁽²⁾>_q这后两者的等阶N次方Y压缩效应和等阶N次方H压缩效应的压缩条件和压缩特性正好相反,这种现象就称为相反压缩.     

由奇、偶相干态组成的第Ⅱ种四态叠加多模叠加态光场的等阶N次方H压缩特性

利用多模压缩态理论,详细研究了由奇、偶相干态组成的第Ⅱ种四态叠加多模叠加态光场|ψ_o,e⁽⁴⁾Ⅱ>_q的等阶N次方H压缩特性.结果发现:1)当腔模(纵模)总数_q与压缩阶数N之积_qN为偶数时,态|ψ_o,e⁽⁴⁾Ⅱ>_q恒处于等阶N-H最小测不准态;2)当_qN为奇数时,在其它参量的不同组合取定值的条件下,态|ψ_o,e⁽⁴⁾Ⅱ>_q可分别呈现以下几种效应:①某一正交分量呈现等阶N次方H压缩效应,另一正交分量则既不呈现出等阶N次方H压缩效应也不处于等阶N-H最小测不准态;②呈现出"半相干态”效应;③处于等阶N-H最小测不准态;3)经与文献17比较发现本文论及的态|ψ_o,e⁽⁴⁾Ⅱ>_q与态|ψ_o,e⁽⁴⁾Ⅰ>_q之间存在着"压缩简并”现象.     

Chiral perturbation theory for fDS/FD and BBS/BB

The decay constants for D and D_s mesons, denoted f_D and f_DS respectively, are equal in the SU(3)_V limit, as are the hadronic amplitudes for and mixing. The leading SU(3)_V violating contribution to (F_DS/F_D) and to the ration of hadronic matrix elements relevant for and mixing amplitudes are calculated in chiral perturbatiion theory. We discuss the formalism needed to include both meson and anti-meson fields in the heavy quark effective theory.     

Near-infrared bands of S2: 3Πgi-3Σu+ system

Vibrational and rotational analyses of the near-infrared bands of S₂ lying in the region 7440–8085 Å are reported. They form a new band system involving a ${}^3\text{Π}{}_{\mathrm{gi}}\text{-}{}^3\text{Σ}{}_{\mathrm{u}}{}^{\mathrm{+}}$ transition and arise from the same initial ³Π_gi state of the ³Π_gi-³Δ_ui band system reported earlier. The analyses of the bands of this system due to the isotopic molecules ³²S³⁴S and ³⁴S₂ are also reported.     

Magnetism in nanometer-thick TiOx/Co/TiOx/TiN/Si multilayered structures

Most studies on Co-doped TiO₂ system were focused on thin films grown by MBE-based methods. In this work we report the ferromagnetism of nanometer-thick-layered TiO₂/Co/TiO₂/TiN film grown on Si substrate by conventional magnetron sputtering. For the growth of TiO₂ on silicon, a non-oxide thermally stable material, TiN, was introduced to prevent Ti penetration into the Si substrate. Structural, magnetic, and transport measurements respectively by Raman, SQUID and Hall effect show that our samples are n-type semiconductors and exchange bias effect due to exchange coupling between Co and interfacial CoO. For the rapid vacuum annealed specimen, we found an enhanced loss and a Perminvar-type constricted hysteresis loop, which attributed to pinning of domain walls due to an induced anisotropy by the pair ordering in the metallic alloy of Co-Ti-Si.     

The decay process 11ΛB → π− + 11C

The branching ratios are calculated for ¹¹_ΛB decay to the ¹¹C ground and excited states below 8 MeV for two possible spin values of ¹¹_ΛB. It is found that the decay rate to the ¹¹C^★ state at E^★ = 6.48 MeV is comparable in magnitude to that leading to the ¹¹C ground state if $\text{J(}{}^{11}{}_{\mathrm{\Lambda }}\text{B}\text{) =}\text{5}\text{2}$ is assumed. This result, unlike the branching ratios calculated for the $\text{J(}{}^{11}{}_{\mathrm{\Lambda }}\text{B}\text{) =}\text{7}\text{2}$ case, is in accord with experiment and lends support to the assumption that $\text{J =}\text{5}\text{2}$ holds for ¹¹_ΛB. The necessity of the reinterpretation of some of the so-called ¹³_ΛC events in terms of ${}^{11}{}_{\mathrm{\Lambda }}\text{B}\text{→ π}{}^{\mathrm{?}}\text{+}{}^{11}\text{C}{}^1$ is indicated.     

The decay processes Λ8Li → π− + 8Be1 (∼ 17 MeV)

The branching ratio is calculated for _Λ⁸Li decay to the (2⁺) ⁸Be¹ states near 17 MeV, using intermediate coupling wave functions for _Λ⁸Li and for the relevant ⁸Be¹ states. It is pointed out that this ratio is sensitive primarily to a mixing angle ? in the _Λ⁸Li wave function. Within one standard deviation, the data allow two ranges (+0.05 to +0.25 rad and +1.10 to +1.25 rad) for the value of ?. The further requirement that there also be acceptable agreement between the angular distribution expected for the subsequent ${}^8\text{Be}{}^1\text{(? 17}\text{MeV → 2}{}^4\text{He}$ decay and the data, shifts these allowed ranges for ?, to (+0.13 to 0.40) rad and (+0.9 to +1.2) rad. It is predicted that the dominant transition should be to ⁸Be¹ (16.6 MeV), as is observed to be the case, rather than to ⁸Be¹ (16.9 MeV). The interpretation of these values for ? is discussed in some detail and their implications for intermediate coupling shell-model calculations of Λ-hypernuclear wave functions are considered.     

The 5T2g → 5Eg absorption in MgO: Fe2+

At helium temperatures two sharp lines at 9350 and 9510 cm^?1 have been observed for the first tune on the low-energy side of the broad double-peaked absorption corresponding to the ${}^5\text{T}{}_{\mathrm{2g}}\text{→}{}^5\text{E}{}_{\mathrm{g}}$ transition in Fe²⁺ at the octahedral site in MgO. The lower energy line has a half width of 4 cm^?1; Zeeman measurements show that it is of magnetic dipole origin. The Zeeman spectra are consistent with those expected for a pure electronic transition from the (⁵T_2g)T_2g ground state to the ⁵E_g excited state. The second line, with a halfwidth of ~ 35 cm^?1, a vibrational sideband.     

Electrical property of HfOxNy-HfO2-HfOxNy sandwich-stack films

The effects of HfO_xN_y on the electrical property of HfO_xN_y-HfO₂-HfO_xN_y sandwich-stack (signed as SS) films were investigated. Excellent electrical performances were achieved in SS films, with a high dielectric constant of 16 and a low leakage current of ∼2 × 10⁻⁸ A/cm² at 1 MV/cm. Schottky (SK) emission and Frenkel-Poole (PF) emission are found to be the dominant mechanisms for the current conduction behavior. After a long time stress, the flat-band voltage shift in the SS film is much smaller than that in a pure HfO_xN_y film indicating fewer charge traps existed in the SS film. Based on the experiments, the new SS structure is more favorable for the improvement of electrical performances than a pure HfO_xN_y or HfO₂ structure.     

Etude par diffraction neutronique des solutions solides K1−xBixF1+2xetRb1−xBixF1+2x

Bragg neutron diffraction studies have been carried out on the fluorite type solid solutions K_1?xBi_xF_1+2x (0.50 ? × ? 0.70) and Rb_1?xBi_xF_1+2x (0.50 ? × ? 0.60). The distribution of the fluorine atoms between normal and interstitial sites is given as a function of substitution rate. A substition mechanism is proposed. Electrical and NMR results on one side and structural data on the other side are correlated. A study of the background as a function of temperature has allowed to determine the static origin of its modulation. By inelastic neutron diffusion, it has been shown that the number of carriers is weak, which involves a high mobility.     

Spinor techniques for calculating pp → W±/Z0 + jets

We present techniques which enable one to calculate quickly the amplitudes for many scattering processes in the high-energy limit. As an illustration of the method, these are applied to the diagrams for $\text{p}\text{p}\text{→}\text{V}\text{+ 0, 1}\text{or}\text{2}\text{jets}$, where V = W^± or Z⁰. The form of the results lends itself to immediate numerical evaluation.     

Electronic and magnetic structures of V-doped zinc blende Zn1-xVxNyO1-y and Zn1-xVxPyO1-y

Electronic and magnetic structures of zinc blende ZnO doped with V impurities are studied by first-principles calculations based on the Korringa-Kohn-Rostoker (KKR) method combined with the coherent potential approximation (CPA).Calculations for the substitution of O by N or P are performed and the magnetic moment is found to be sensitive to the N or P content.Furthermore,the system exhibits a half-metallic band structure accompanied by the broadening of vanadium bands.The mechanism responsible for ferromagnetism is also discussed and the stability of the ferromagnetic state compared with that of the paramagnetic state is systematically investigated by calculating the total energy difference between them by using supercell method.