窄带干涉滤光片抗击不同输出方式激光的损伤特性研究

利用Nd∶YAG调Q单脉冲激光和自由脉冲激光对硬膜窄带干涉滤光片进行激光损伤阈值的测试,并且采用表面热透镜技术测量了滤光片的吸收率。实验发现：窄带干涉滤光片的吸收率和激光损伤阈值强烈依赖于辐照激光波长与窄带干涉滤光片通带的相对位置;在调Q单脉冲激光作用下,不同中心波长的滤光片损伤形貌存在明显的差别,而在自由脉冲激光作用下,各滤光片的损伤形貌则趋于相同,均表现为典型的热熔烧蚀破坏。根据实验结果,结合损伤形貌,通过驻波场理论对激光作用下滤光片内电场分布的分析与模拟,探讨了两种激光模式作用下滤光片的损伤特征和损伤机理的不同特点。     

窄带干涉滤光片抗击不同输出方式激光的损伤特性研究

利用Nd∶YAG调Q单脉冲激光和自由脉冲激光对硬膜窄带干涉滤光片进行激光损伤阈值的测试,并且采用表面热透镜技术测量了滤光片的吸收率。实验发现:窄带干涉滤光片的吸收率和激光损伤阈值强烈依赖于辐照激光波长与窄带干涉滤光片通带的相对位置;在调Q单脉冲激光作用下,不同中心波长的滤光片损伤形貌存在明显的差别,而在自由脉冲激光作用下,各滤光片的损伤形貌则趋于相同,均表现为典型的热熔烧蚀破坏。根据实验结果,结合损伤形貌,通过驻波场理论对激光作用下滤光片内电场分布的分析与模拟,探讨了两种激光模式作用下滤光片的损伤特征和损伤机理的不同特点。     

Residual stress prediction and control of Ta2O5/SiO2 multilayer based on layer structure designing

Residual stress, which can be inevitably introduced during the optical films deposition process, must be controlled in many applications since the surface deformation is caused. The residual stress is traditionally controlled by adjusting the process parameters. However, the process parameters are determined by other more desired properties in many fields. In these cases, layer structure is the only variable to change the residual stress status of the components. Ta2O5/SiO2 is most commonly used material pair in visible/near infrared （VIS/NIR） region. In this letter, stress behaviors of Ta2O5 and SiO2 single layers deposited by ion-assisted deposition （IAD） are studied. Stress-thickness linear correlation curves of the two materials are obtained, which agree with the commonly reported linear results. Based on these features, a kind of antireflection （AR） coating acted as back side coating is designed to control the residual stress of components by the layer structure designing. A series of AR coatings at 1319 nm are designed, according to residual stress status desired to introduce.     

脉冲激光辐照光学薄膜的缺陷损伤模型

建立了缺陷吸收升温致薄膜激光损伤模型,该模型从热传导方程出发,考虑了缺陷内部的温度分布以及向薄膜的传导过程,通过引入散射系数简化了Mie散射理论得出的吸收截面.对电子束蒸发沉积的ZrO₂:Y₂O₃单层膜进行了激光破坏实验,薄膜样品的损伤是缺陷引起的,通过辉光放电质谱法对薄膜制备材料的纯度分析发现材料中的主要杂质元素为铂,其含量为0.9％.利用缺陷损伤模型对损伤过程进行了模拟,理论模型和实验结果取得了较好的一致性.     

Ta2O5电子结构和光学性质的第一性原理计算

采用基于密度泛函理论(DFT)框架下广义梯度近似平面波超软赝势方法,计算了Ta2O5的电子结构、态密度和和光学性质。能带结构计算表明,Ta2O5为间接带隙半导体,禁带宽度为2.51eV;价带主要由O 2s和Ta 5d,以及Ta 5d,6s电子态构成,导带主要由Ta 5d和O 2p构成;静态介电常数ε1（0）=3.96;折射率n=2.0。并利用计算的能带结构和态密度分析了Ta2O5的介电常数、吸收系数、折射率、反射率、光电导率和能量损失函数的计算结果,为Ta2O5的设计和应用提供了理论依据。     

Ultrafast Modulation of the Molten Metal Surface Tension under Femtosecond Laser Irradiation

We predict ultrafast modulation of the pure molten metal surface stress fields under the irradiation of the single femtosecond laser pulse through the two-temperature model molecular-dynamics simulations. High-resolution and precision calculations are used to resolve the ultrafast laser-induced anisotropic relaxations of the pressure components on the time-scale comparable to the intrinsic liquid density relaxation time. The magnitudes of the dynamic surface tensions are found being modulated sh...     

Ta2O5对碲铋酸盐玻璃光学性能的影响

通过高温熔融法制备了一系列(90-x)TeO2-10Bi2 O3-xTa2 O5(x=0％,2％,4％,6％,8％)TBT玻璃样品.拉曼光谱和X射线光电子能谱测试结果显示,随着Ta2 O5的加入,玻璃网络中的[TeO3]与[TeO3+1]向[TeO4]转变,玻璃网络结构更加致密.这解释了差示扫描量热法测试中TBT玻璃的...     

飞秒激光烧蚀合成Y_2O_3∶Pr~(3+),Yb~(3+)上转换发光材料

利用飞秒激光烧蚀方法合成了Y2O3∶Pr3+,Yb3+纳米颗粒并对其上转换发光性质进行了研究。对合成产物的形貌分析显示,在一定的激光烧蚀功率密度下,即可制备出小尺寸的纳米颗粒,提高激光功率密度可以得到更高的纳米颗粒产量,所获得的纳米颗粒尺寸小于50 nm。荧光测试结果表明,Y2O3∶Pr3+,Yb3+纳米颗粒具有510 nm为中心的上转换发光带,上转换发光随纳米颗粒数量的增加而增强。     

Influences of SiO2 protective layers and annealing on the laser-induced damage threshold of Ta2O5 films

Ta2O5 films are prepared on BK7 substrates with conventional electron beam evaporation deposition.The effects of SiO2 protective layers and annealing on the laser-induced damage threshold (LIDT) of the films are investigated.The results show that SiO2 protective layers exert little influence on the electric field intensity(EFI)distribution,microstructure and microdefect density but increase the absorption slightly.Annealing iS effective on decreasing the microdefect density and the absorption of the films.Both SiO2 protective layers and annealing are beneficial to the damage resistance of the films and the latter is more effective to improve the LIDT.Moreover,the maximal LIDT of Ta2O5 films is achieved by the combination of SiO2 protective layers and annealing.     

Influences of SiO2 laser-induced protective layers and damage threshold of annealing on the Ta2O5 films

Ta2O5 films are prepared on BK7 substrates with conventional electron beam evaporation deposition. The effects of SiO2 protective layers and annealing on the laser-induced damage threshold （LIDT） of the films are investigated. The results show that SiO2 protective layers exert little influence on the electric field intensity （EFI） distribution, microstructure and microdefect density but increase the absorption slightly. Annealing is effective on decreasing the microdefect density and the absorption of the films. Both SiO2 protective layers and annealing are beneficial to the damage resistance of the films and the latter is more effective to improve the LIDT. Moreover, the maximal LIDT of Ta2O5 films is achieved by the combination of SiO2 protective layers and annealing.     

The Structure and Optical Properties of Thin ZrO2, ZrO2–Y2O3, and ZrO2–Fe2O3 Films

Russian Physics Journal -     

Formation and Optical Properties of Nanoripples on the Surface of Calcium Fluoride Generated upon Femtosecond Laser Irradiation

Optics and Spectroscopy - Femtosecond laser structuring of dielectrics is currently a high-priority task for creation of optical elements. In the present work, we report on femtosecond laser...     

飞秒激光作用下光学与激光玻璃的暗化阈值测量

报道了各种商用光学玻璃和激光玻璃在800nm、120fs、1kHz钛宝石脉冲激光作用下,产生光致暗化的阈值。     

Ta_2O_5/MgF_2异质结构三维光子晶体的偏振性

为了在可见及近红外波段得到具有良好带隙结构的三维光子晶体,利用传输矩阵法分析了MgF2、Ta2O5以及Ta2O5/MgF2异质结构三维光子晶体的带隙性质.结果表明:Ta2O5/MgF2异质结构三维光子晶体在820～1020nm的近红外波段TM模式下具有不受入射光方向影响的全方位光子带隙.该结构有望用于制作近红外光波段的偏振器件.     

氧化钪/氧化硅反射薄膜的355 nm激光损伤特性

采用电子束蒸发法制备了Sc2O3单层薄膜和Sc2O3/SiO2多层反射膜.利用原子力显微镜、X射线衍射仪等方法对薄膜的表面和结构进行,研究.采用355 nm激光研究了Sc2O3/SiO2多层薄膜的损伤特性和预处理效应,并对Sc2O3的损伤原因进行了分析.实验发现,Sc2O3具有较宽的带隙,薄膜结构为立方相,影响Sc2O3/SiO2 多层反射膜抗损伤能力的主要因素足材料的纯度.     

Voltage shift of hysteresis loops of SrBi2Ta2O9 thin films under unipolar stress

Voltage shifts of hysteresis loops of metalorganic decomposition (MOD)-derived SrBi₂Ta₂O₉ (SBT) thin films, known as imprint, have been observed after exposing the thin-film capacitors to unipolar pulses. The voltage shift changes with cumulative total time at maximum voltage, following a relationship with no pulse-width dependence. The origin of the voltage shift is briefly discussed in terms of an internal bias field induced by injected electrons trapped at positive polarity. The pulse-measurement responses are greatly affected by the internal bias field, even though no imprint failure was observed up to 10¹⁰ unipolar pulses. The voltage shift and asymmetric properties can be removed easily by applying bipolar pulses of saturation amplitude. Received: 27 June 2000 / Accepted: 16 August 2000 / Published online: 5 October 2000     

PbS纳米颗粒复合的溶胶凝胶薄膜的飞秒非线性光学特性

通过光Kerr效应研究了PbS半导体纳米颗粒的三阶光学非线性响应。在较低的激发强度下,单激子态的饱和吸收和双激子效应的激发态吸收对非线性的贡献同时存在;而在高激发强度下,双激子效应是主要的。计算了高激发强度下(4mJ/cm²)PbS半导体纳米颗粒的三阶非线性光学极化率为5.1×10^-10esu。     

Calculation of electrocaloric properties of ferroelectric SrBi2Ta2O9

Theoretical work on the dependence of polarization on variation of temperature for ferroelectric SrBi₂Ta₂O₉ due to applied electric field shift ΔE was done, showing good agreement with experimental data of previous work. Phenomenological model and thermodynamic calculation predicted electrocaloric entropy changes, heat capacity changes, and temperature changes as a function of temperature under different electric field shifts. Maximum entropy change, relative cooling, and refrigerant capacity due to applied electric field shift were calculated.     

脉冲激光沉积非晶态Ni-V2O5 复合薄膜及其电化学性能研究

首次报道了用 35 5nm脉冲激光沉积非晶态Ni V2 O5复合薄膜电极的电化学性能 .采用不同摩尔比的NixV2 O5靶 (x =0 .1,0 .3,0 .5 ) ,在不同的基片温度 (Ts)和O2 气压力下制备了Ni V2 O5复合薄膜 .XRD和SEM测定表明 ,在不锈钢基片上 ,Ts=30 0℃和氧气压力为 14Pa沉积 0 .5h得到的是非晶态的Ni V2 O5薄膜 .将此非晶态的Ni0 .3 V2 O5薄膜电极用于锂电池的正极 ,与纯V2 O5薄膜相比 ,不仅具有良好的放电速率性能和高的比容量 ,而且其充放电循环稳定性优异 .该薄膜电极在放电速率为 2 0C时测得的比容量达 2 0 0mAh/ g ,并经 10 0 0次以上的充放电循环无明显的衰减