HIRFL-CSRe二极铁积分磁场测量

 介绍了兰州重力加速器冷却储存环实验环二极磁铁积分长线圈测磁装置的构成，描述了实验环二极铁的分散性测量、横向分布测量、传递函数等测量内容及测量方法。实验环二极铁采用不断地加减硅钢铁片垫补和加调整线圈电流的方法来调整二极磁铁的有效长度来改变分散性。通过垫补和测量，二极磁铁的分散性在优化磁场时达到±2×10^-4。同时给出了二极铁的横向分布和传递函数的测量结果。对二极铁的设计和加工进行了修正。     

测定半导体扩散层表面浓度、p-n结深度及扩散系数的霍耳效应法

本文叙述测定半导体扩散层表面浓度、P-n结深度及扩散系数的霍耳效应法。导出了求算半导体扩散层表面浓度、P-n结深度及扩散系数的一组积分公式。对砷由气相扩散入锗这一情况进行了详细研究:对上述公式进行数值积分并给出一系列图线,利用这些图线从实验值求得表面浓度等上述参数。实验表明:此法所测得的结深度和表面浓度分别与光干涉法直接测得的结深度和平均电导法测得的表面浓度,在误差范围内很好符合;而且此法所测得的扩散系数与B?senberg用电容法测得的也极为接近。扩散系数与温度的关系为D=2.3exp(-2.36/(kT)),当N₀=10¹⁴厘米^-3;D=1.7exp(-2.36/(kT)),当N₀=10¹⁶厘米^-3。     

Tb3+掺杂硅酸盐玻璃发光性能的浓度依赖关系

 利用高温熔融法制备了不同浓度的Tb³⁺掺杂硅酸盐玻璃,并分别测量了紫外和X射线激发时的发射光谱。光谱结果表明,不同浓度Tb³⁺掺杂硅酸盐玻璃在紫外和X射线激发时发光行为具有相似的浓度依赖关系：低浓度Tb₄O₇掺杂时主要以蓝光(5D₃→⁷FJ)发射为主,而高浓度掺杂时以绿光(⁵D₄→⁷FJ)发射为主。Tb³⁺发光强度与掺杂浓度的关系分析表明,⁵D₃的浓度猝灭是电偶极-电偶极相互作用引起的, 而⁵D₄的浓度猝灭是交换相互作用引起的。     

玻碳电极上ABTS的电化学行为

通过循环伏安法和旋转圆盘电极装置研究了2,2′-偶氮-双-(3-乙基苯并噻唑啉-6-磺酸)二铵盐(ABTS),ABTS^2-和ABTS^·-氧化还原对在pH=4.4的磷酸缓冲溶液中和玻碳电极上的电化学和传质行为. 由不同转速下记录的i-E曲线, 得到在磷酸缓冲溶液的电极反应速率常数和传递系数以及ABTS^2-的扩散系数分别为4.6×10^-3 cm/s、0.28和4.4×10^-6 cm^{2相似文献}   

一种低能散RFQ加速器的物理设计

讨论了脉冲束注入、逐步增加同步相位、减小电极调制系数和极间电压等降低RFQ加速器能散的途径, 并在此基础上设计了一台能散为0.6%的RFQ加速器. 该加速器用于加速器质谱对¹⁴C, ¹³C, ²C 3种 离子的传输有很强的选择性, 有利于降低测量本底、简化装置.     

高激发213Fr核的形变研究

对132MeV ¹⁶O+¹⁹⁷Au反应产生的裂变碎片和巨偶极共振γ射线进行了符合测量,得到了E=92MeV的高激发²¹³Fr的γ衰变谱和γ角关联谱.观测到复合核巨偶极共振γ角关联谱存在很大的各向异性.利用改进的统计模型程序分析了实验数据,不考虑裂变延迟时,统计模型计算可以很好拟合地实验结果.通过对γ角关联谱的理论计算与实验结果的比较,可以得出高激发²¹³Fr核(E=92MeV)的形状从集体长椭球向非集体扁椭球变化.     

BEPC-LINAC试验束上1GeV/c多粒子磁谱仪的设计和性能测量

试验束上2Q2D结构的磁谱仪系统由2块二极磁铁和2块四极磁铁以及位置灵敏探测器组成.该磁谱仪的接收立体角5×10^–4sr,动量范围0.2—1.3GeV/c.测量了聚焦面上的束流截面和动量谱.介绍了一种测量电子与质子飞行时间差的动量测量方法.     

106Ag手征性实验研究

利用能量为60MeV的¹¹B束流, 通过¹⁰⁰Mo(¹¹B, 5n)¹⁰⁶Ag熔合蒸发反应布居¹⁰⁶Ag的高自旋态, 用15台带BGO反康的HPGe探测器进行在束γ谱学测量. 通过γ-γ符合矩阵开窗分析和DCO比值分析, 建立了¹⁰⁶Ag新的能级纲图, 观测到26条新γ跃迁. 与相邻同位素奇奇核¹⁰⁴Rh比较, ¹⁰⁶}Ag中带1和带2具有A≈100区手征二重带的3个特征, 推测它们可能是基于πg_9/2⊙υh_11/2组态的手征二重带. 但它们的角动量顺排不一致, 在实验上还需进一步的测量研究.     

AlGaN/AlN/GaN结构中二维电子气的输运特性

对使用金属有机物汽相沉积法生长的AlGaN/AlN/GaN结构进行的变温霍尔测量，测量结果指出在AlN/GaN界面处有二维电子气存在且迁移率和浓度在2K时分别达到了1.4×10⁴cm²·V^-1·s^-1和9.3×10¹²cm^-2，且在200K到2K范围内二维电子气的浓度基本不变，变磁场霍尔测量发现只有一种载流子(电子)参与导电.在2K温度下，观察到量子霍尔效应，Shubnikov-de Haas (SdH) 振荡在磁场约为3T时出现，证明了此结构呈现了典型的二维电子气行为.通过实验数据对二维电子气散射过程的半定量分析，推出量子散射时间为0.23ps，比以往报道的AlGaN/GaN结构中的散射时间长，说明引入AlN层可以有效减小合金散射，进一步的推断分析发现低温下以小角度散射占主导地位.     

丰中子核区奇A核八极形变及A=130区一些缺中子核高自旋态研究

对近几年来清华大学物理系核物理研究组原子核高自旋态实验研究的一些新进展进行了介绍.内容包括两个部分:第一部分介绍通过国际合作,利用测量裂变瞬发γ谱方法对A=140丰中子核区的奇A核^143,145Ba,^145,147La等的极形变研究的进展.第二部分简述对A=130缺中子核区的^134,137,138Ce及¹²²Ba等核高自旋态研究,包括形状驱动、八极关联、集体回弯等效应.     

GaAs/AlGaAs多量子阱中载流子动力学的实验研究

利用瞬态光栅激光光谱技术测量了(110)方向生长的本征GaAs/AlGaAs多量子阱的双极扩散系数.室温下,光激发的载流子浓度n_ex=3.4×10¹⁰/cm²时,测得双极扩散系数D_a=13.0 cm²/s,载流子的寿命τ_R=1.9 ns.改变光激发的载流子浓度(n_{ex关键词： 瞬态光栅 量子阱 空穴输运}     

A simple measure of the ionic diffusion coefficient in the mixed conductor Cu3VS4

A simple method with three electrodes has been used to measure the diffusion coefficient of the mobile Cu⁺ ion in the mixed conductor Cu₃VS₄ on the basis of the ambipolar diffusion theory. By this method we find that the diffusion coefficient is about 1×10⁻⁷ cm²/s at 300K with an activation energy of 0.44eV.     

Extremely fast ambipolar diffusion in n-i-p-i doping superlattices investigated by an all-optical pump-and-probe technique

We report on investigations of the ambipolar diffusion process in n-i-p diodes and n-i-p-i doping superlattices performed by a new all-optical pump-and-probe technique. This new technique allows not only the determination of the ambipolar diffusion coefficient but also the spatially resolved investigation of the stationary distribution of the optically-induced excess carriers. The n-i-p-i doping superlattice exhibited an extremely large ambipolar diffusion coefficient in the range of 10⁴cm²s⁻¹. The ambipolar diffusion coefficient of the n-i-p and n-i-p-i structure was demonstrated not to be a constant but a function of the charge carrier density. This strongly affects the spatial distribution of the excess carriers especially in the large signal regime (density of photo-generated carriers much larger than dark carrier concentration). The spatial distribution of the carriers in the small as well as in the large signal case can be understood theoretically if the real dependence of the ambipolar diffusion coefficient on the carrier density is taken into account.     

Untersuchung des „Auroral Afterglow“ und seiner Präparationsstadien

The intensity decay of negative bands of N ₂ ⁺ and of first positive bands of N₂ in the auroral afterglow has been measured. An explanation, seeming possible for the decay curves of the first ones is proposed. By this the intensity decay in the beginning of the afterglow at high ionic densities is determined by the recombination of N ₂ ⁺ with electrons. Later, the ambipolar diffusion of the charge carriers to the wall causes the time dependance. A value of the ambipolar diffusion coefficient in nitrogen, derived from the measurements is given by the relationD _a ·p ≈ 124cm² sec^?1 Torr. The temperature of the charge carriers is estimated to be 313? K. The intensity decay of the pos. group in the afterglow seems mainly to be due to the diffusion of metastable particles to the wall.     

随机磁场中的双极电场与双极扩散

等离子体中存在随机场输运时,必然会导致双极电场。本文给出了存在电场时,粒子在随机场中的转移几率,由此可计算输运流、双极电场等。算出的双极电场与碰撞的关系是不灵敏的((|e|E)/T_e=-A1/n_e(dn_e)/(dx),A与碰撞有关,但A～1)。并指出,此双极电场可作为判断随机场是否重要的必要条件(但非充分条件)。在随机场双极扩散中,杂质流速大于氢离子流速(V_I/V_i≈(m_i/     

本征GaAs量子阱中电子自旋扩散输运的时-空分辨吸收光谱研究

发展了一种时-空分辨圆偏振光抽运-探测光谱及其理论,并用于本征GaAs量子阱中电子自旋扩散输运的实验研究.获得室温下本征GaAs量子阱中的“自旋双极扩散系数”为D_as=37.5±15 cm²/s.此结果比用自旋光栅法测量到的掺杂GaAs量子阱中电子自旋扩散系数小.解释为是由于“空穴库仑拖曳”效应减慢了电子自旋波包的扩散输运. 关键词： 时-空分辨抽运-探测光谱 电子自旋扩散 GaAs量子阱     

Anomalous plasma diffusion transverse to high magnetic fields in InSb

Investigations on the ambipolar diffusion of an electron-hole plasma transverse to a magnetic field have been carried out in InSb. A plasma layer, produced at the surface of the sample by a short laser pulse, was moved through the sample in crossed electric and magnetic fields by the Lorentz force. From the broadening of the plasma layer we found at 80K an enhanced diffusion coefficient which decreased proportional to 1/B for magnetic fields higher than 1T, constrary to the expected classical 1/B ² dependence. Furthermore, the diffusion coefficient was strongly dependent on the electric field. The ambipolar drift velocity, measured simultaneously showed a classical behaviour. Together with the enhanced diffusion we observed instabilites in the electric potential. The instability threshold decreased towards the cathode.     

Diffusion cooling in neon,argon, and krypton afterglow plasmas

Measurements are reported of ambipolar diffusion coefficients as determined from ion density loss rates, and of electron temperatures determined using the single Langmuir probe technique, in afterglow plasmas of spectroscopically pure neon, argon and krypton. In each gas there was a critical pressure,p _{0 c} , above which the product of the ambipolar diffusion coefficient,D _a , and the reduced gas pressure,p ₀, was pressure independent and above which the electron temperature was found to cool asymptotically to the gas temperature. For pressures belowp _{0 c} ,D _a p ₀ decreased with decreasing pressure, and the electron temperature cooled asymptotically to a steady equilibrium value,T _eq, below the gas temperature, this equilibrium value itself decreasing with decreasing gas pressure. These results clearly show that diffusion cooling of electrons was taking place at these low gas pressures. A detailed study of the krypton afterglow showed that the values ofD _a p ₀ andT _eq for a given gas pressure were related in a manner predicted by simple diffusion theory. During the course of these measurements values for the zero field mobilities of Ne⁺, Ar⁺ and Kr⁺ ions in their parent gases were obtained and are also reported.     

Elektronenverluste in einem abklingenden Wasserstoffplasma

The time dependence of the electron density in the afterglow period of an electrodeless discharge in hydrogen was measured by means of 4- and 8-mm microwave interferometry. An exponential decay was observed in the late afterglow permitting the evaluation of a time constant in the density range from 10¹²–10¹⁰ electrons per cm³. The decay time of the plasma was influenced by the discharge conditions. Electron losses could be explained by ambipolar diffusion and attachment to impurities. Two diffusion coefficients were found correlated to the discharge duration. The mobility value H₀=10.1±1.0 cm²/V · sec calculated from the diffusion coefficient found for short discharge pulses agrees with Saporoschenkos mobility value μ₀=10.2 cm²/V · sec for the H ₃ ⁺ -ion. A second mobility value μ₀=14.8±1.2cm²/V · sec found for longer discharge pulses might refer to the H⁺-ion.     

Mass transport in cuprous oxide

The chemical diffusion coefficient of Cu₂O has been obtained for an oxygen partial pressure near 5 10^?4 atm as a function of the temperature in the range 700–900°C D? = 1 62 10^?4 exp(?5140 ± 600 cal mol ^?1)/RT cm²s^?1 This was easily achieved according to the electrochemical method used for the preparation of gaseous mixtures whose Po₂; is lower than 10^?5 atm The slight difference observed with the previously published results by Maluenda, and obtained for Po₂ values which increase with T between 10^?4 and 0.21 atm, may be due to an oxygen partial pressure effect already observed in the case of CoO. An ambipolar treatment of the chemical diffusion, in the case of p-type semiconductor M_aO_b, oxides, has allowed us to express the chemical diffusion coefficient as a function of the concentration of the prevailing defects and of their diffusion coefficient In the case where the prevailing defects are cationic vacancies α times ionized we have shown that the expression D? = (1 + α)D_vα can be generalized to the A₂O compounds This set of results has allowed us, according to the copper self diffusion data obtained recently by Peterson etal, to estimate the apparent enthalpy of formation of the catiomc vacancies ΔH_f 23 ± 0 8 kcal mol^?1.