Magneto-piezospectroscopy of acceptors in tetrahedrally coordinated semiconductors

This paper presents a study of the magnetospectroscopy of acceptors in elemental group-IV semiconductors in the presence of uniaxial stress. We use a formulation of the effect of stress on the transition probabilities for optical absorption which represents a considerable simplification over previous treatments. We give an analysis of both the longitudinal and the transverse magneto-spectroscopy of acceptors in semiconductors having the diamond structure under uniaxial stress. The results are used to determine the values of theg-factors for two levels of Ga acceptors in Ge by comparing the present results with the experimental data. Due to the relevance of its scientific content, this paper has been given priority by the Journal Direction.     

Dynamic characterization of charge transport in organic and polymer transistors

In this paper we describe three methods that can be used to measure the transient response of organic and polymer field-effect transistors (FETs) and also how such measurements can be used to determine the drift mobility and velocity. The first method measures the response of a FET to a step voltage applied to the source with the gate grounded and the drain held at close to ground, while the second uses a ramp input to the source. The third technique evaluates the frequency response of the FET, connected as a diode, to a large-signal alternating voltage. We show that important information can be obtained from such measurements which can be quantitatively interpreted with the help of models that we are developing. In general, there is good agreement between the drift mobility measured with these approaches and the field-effect mobility calculated from transistor output and transfer characteristics. The specific results we present in this paper are for pentacene devices; however, other recent work by our group indicates that these results are more general.     

Molecular dynamics study of groove fabrication process using AFM-based nanometric cutting technique

Three-dimensional molecular dynamics simulation of groove fabrication using atomic force microscopy (AFM)-based nanometric cutting technique is set up, fabrication processes of grooves with two types (line, and folder line) and five folder angles (0°, 30°, 45°, 60°, 90°) are simulated to investigate the effect of groove geometry on the fabrication process. The results show that the Normal force, Lateral force, and Resultant forces are almost symmetric with respect to the critical folder angle of 45°. The best surface quality of fabricated groove can be obtained at the folder angle of 45°. It reveals that the groove geometry has a significant effect on the groove fabrication process due to the material anisotropy on the atomic scale.     

Modelling of contact effects in microcrystalline silicon thin-film transistors

Hydrogenated microcrystalline silicon has recently emerged as a promising material system for large-area electronic applications such as thin-film transistors and solar cells. In this paper, thin-film transistors based on microcrystalline silicon were realized with charge carrier mobilities exceeding 40 cm²/Vs. The electrical characteristics of the microcrystalline silicon thin-film transistors are limited by the influence of contact effects. The influence of the contact effects on the charge carrier mobility was investigated for transistors with different dimensions of the drain and source contacts. The experimental results were compared to an electrical model which describes the influence of the drain and source contact dimension on the transistor parameters. Furthermore, the Transmission Line Method was applied to investigate the contact effects of the thin-film transistors with different drain and source contact dimensions. Finally, optimized device geometries like the channel length of the transistor and dimension of the drain and source contacts were derived for the microcrystalline transistors based on the electrical model.     

Fabrication of completely filled carbon nanotubes with copper nanowires in a confined space

Carbon nanotubes (CNTs) filled completely with polycrystalline Cu nanowires were synthesized by laser vaporization of Cu and graphite under high-pressure Ar gas atmosphere. Depending on the Ar gas pressure (0.1–0.9 MPa) and the Cu content (1–40 at.%) in graphite targets for laser vaporization, various products with different morphologies were observed by scanning and transmission electron microscopy. The ratios of the Cu-filled CNTs and carbon nanocapsules particularly increased as Ar gas pressure was increased. The maximum ∼60% fraction of Cu-filled CNTs with outer diameter of 10–50 nm and length of 0.3–3 μm was achieved at 0.9 MPa from graphite containing 20 at.% Cu. Most of the encapsulated Cu-nanowires were surrounded by single, double, or triple graphitic layers. Although the yield of the Cu-filled CNTs was also dependent on the Cu content in the graphite targets, no unfilled CNTs were produced even for low Cu content. The growth of Cu-filled CNTs is explained by the formation of molten Cu–C composite particles with an unusually C-rich composition in a space confined by high-pressure Ar gas, followed by precipitating Cu and C from the particles and subjecting them to phase separation.     

Organic thin-film transistors of pentacene films fabricated from a supersonic molecular beam source

Top-contact organic thin-film transistors (OTFTs) of pentacene have been fabricated on bare SiO₂ and SiO₂ modified with hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (OTS). The pentacene films were deposited from a supersonic molecular beam source with kinetic energy of incident molecules ranging from 1.5 to 6.7 eV. The field-effect mobility of OTFTs was found to increase systematically with increasing kinetic energy of the molecular beam. The improvements are more important on HMDS- and OTS-treated surfaces than on bare SiO₂. Tapping mode atomic force microscopy images reveal that pentacene thin films deposited at high kinetic energy form with significantly larger grains—independent of surface treatment—than films deposited using low-energy beams.     

A study of KCL lattice defects by thermoluminescence experiments

The thermoluminescent emission of X-irradiated potassium chloride is recorded simultaneouslyvs. temperature and wavelength. Samples of different origin and prepared through different processes, including thermal treatments, are examined. Most records show essentially two glow peaks, the wavelength of the one at higher temperature being slightly shifted toward the red. On the whole, experimental results suggest that luminescent centres are originated by potassium ion vacancies lying at a variable distance from interstitial potassium ions. The observed red shift is ascribed to the Coulomb energy of the pairs of these point defects of opposite charges.     

Investigation of material removal mechanism of silicon wafer in the chemical mechanical polishing process using molecular dynamics simulation method

Chemical mechanical polishing (CMP) technology, being the mainstream technique of acquiring global planarization and nanometer level surface, has already become an attractive research item. In the case of CMP process, the indentation depth lies in the range of nanometer or sub-nanometer, huge hydrostatic pressure induced in the local deformation area which makes the material removal and surface generation process different from traditional manufacturing process. In order to investigate the physical essence of CMP technique, the authors carry out molecular dynamics (MD) analysis of chemical mechanical polishing of a silicon wafer. The simulation result shows that huge hydrostatic pressure is induced in the local area and leads to the silicon atom transform from the classical diamond structure (α silicon) to metal structure (β silicon). This important factor results in the ductile fracture of silicon and then in the acquisition of a super-smooth surface.     

High-resolution analytical electron microscopy of catalytically etched silicon nanowires

We report on the characterization of hexagonally ordered, vertically aligned silicon nanowires (SiNW) by means of analytical transmission electron microscopy. Combining colloidal lithography, plasma etching, and catalytic wet etching arrays of SiNW of a sub-50 nm diameter with an aspect ratio of up to 10 could be fabricated. Scanning transmission electron microscopy has been applied in order to investigate the morphology, the internal structure, and the composition of the catalytically etched SiNW. The analysis yielded a single-crystalline porous structure composed of crystalline silicon, amorphous silicon, and SiO _x with x≤2.     

A simplified post-soft-breakdown current model for MOS devices

Based on the tunneling current model, a simplified current model is developed for MOS devices after soft breakdown (SBD). The post-soft-breakdown current consists of modified direct tunneling current and Fowler Nordheim (FN) tunneling current. Considering the change of gate oxide after soft breakdown, impacts of soft breakdown on the dielectric constant, and effective electron mass of the gate oxide are discussed, and their values are obtained by fitting simulation results to experimental data. It is found that the effective electron mass is decreased after soft breakdown due to damaged oxide, while the dielectric constant is increased after soft breakdown due to interface distortion. In this way, the leakage current after soft breakdown can be accurately calculated. The validity of the proposed model is confirmed by experimental results. Z.L. Li currently is with the Department of Electrical and Electronic Engineering, University of Hong Kong.     

Sum-frequency spectroscopy of physisorbed and chemisorbed molecules at liquid and solid surfaces using band-width-limited picosecond pulses

We studied the vibrational Sum-Frequency (SF) spectra of long chain fatty alcohols and amines physisorbed at liquid/air interfaces and of OctadecylTrichlorSilan (OTS) chemisorbed on glass/air interfaces in situ, i. e., in normal laboratory environment. The intense, band-width-limited IR pulses generated by our laser system are tunable from 2600 to 4000 cm^–1 with a constant pulse duration of 3 ps and a band width of 5 cm^–1 (FWHM) over the entire tuning range, thus covering the CH-, NH-, and OH-stretching regions.Using suitable polarization geometries, information on the molecular orientation is obtained from the amplitudes of the symmetric and degenerate methyl-stretching modes. Opposite phase of adjacent vibrational modes can lead to destructive interference in the SF signal, as analyzed theoretically. This interference effect is observed experimentally for the first time, due to the superior spectral resolution and signal-to-noise ratio of our spectra.     

Third order response to a multifrequency photon field in semiconductors

This paper contains a detailed calculation of the photoinduced current density at third order in the coupling between a semiconductor and a multifrequency photon field, starting from its standard textbook expression which reads in terms of a triple commutator. Due to a major intrinsic problem linked to this triple commutator, such a derivation has been made possible quite recently only, thanks to the tools developed in the composite-boson many-body theory we have recently constructed. The photoinduced current density is shown to ultimately read in a compact form, in terms of the “Pauli scatterings” and “Coulomb scatterings” for exciton-exciton interactions introduced in this theory. Representation of this third order response in Shiva diagrams, which visualize interactions between excitons, is also given to better grasp the physics of the various contributions.     

Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon

Long channel n-type metal oxide semiconductor field effect transistors on thin conventional and strained silicon on insulator substrates have been prepared by integrating gadolinium scandate as high-κ gate dielectric in a gate last process. The GdScO₃ films were deposited by electron beam evaporation and subsequently annealed in oxygen atmosphere. Electrical characterization of readily processed devices reveals well behaved output and transfer characteristics with high I _on/I _off ratios of 10⁶–10⁸, and steep inverse subthreshold slopes down to 66 mV/dec. Carrier mobilities of 155 cm²/Vs for the conventional and 366 cm²/Vs for the strained silicon substrates were determined.     

Methods for controlling of the laser-induced absorption in a BTO crystal by using of cw-laser radiation

The iron-atom concentration distribution as well as the gas-phase temperature was measured via laser-induced fluorescence (LIF) during iron-oxide nanoparticle synthesis in a low-pressure hydrogen/oxygen/argon flame reactor using ironpentacarbonyl (Fe(CO)₅) as precursor. Temperature measurements based on multi-line NO-LIF imaging are used to correct for temperature-dependent ground-state populations. The concentration measurement is calibrated based on line-of-sight absorption measurements. The influence of the precursor on the flame is observed at precursor concentrations larger than 70 ppm as the flame front moves closer to the burner surface with increasing Fe(CO)₅ concentration.     

Silver-coated Si nanograss as highly sensitive surface-enhanced Raman spectroscopy substrates

We created novel surface-enhanced Raman spectroscopy (SERS) substrates by metalization (Ag) of Si nanograss prepared by a Bosch process which involves deep reactive ion etching of single crystalline silicon. No template or lithography was needed for making the Si nanograss, thus providing a simple and inexpensive method to achieve highly sensitive large-area SERS substrates. The dependence of the SERS effect on the thickness of the metal deposition and on the surface morphology and topology of the substrate prior to metal deposition was studied in order to optimize the SERS signals. We observed that the Ag-coated Si nanograss can achieve uniform SERS enhancement over large area (∼1 cm ×1 cm) with an average EF (enhancement factor) of 4.2×10⁸ for 4-mercaptophenol probe molecules. Electronic Supplementary Material  The online version of this article () contains supplementary material, which is available to authorized users.     

Photoluminescence decay and time-resolved spectroscopy of cubic yttria-stabilized zirconia

The time-resolved spectra and luminescence decays of cubic yttria-stabilized zirconia single crystals were investigated in the 100–300 K temperature range. At each temperature the time-resolved spectra are dominated by a yellow-orange broad band with a shoulder in the green region, and their shapes appear similar to those displayed in fluorescence. In addition, the shapes remain almost independent of the delay times over the range between 0.04 and 0.4 ms after excitation. The luminescence decays can be satisfactorily described by the superposition of two exponential functions, as well as by two expressions commonly given for decays related to disorder. In the three cases, the temperature dependences of the time constants and the other parameters derived from these expressions are analyzed. The time constants can be accounted for by assuming a radiative decay from two metastable levels with a typical separation of 0.057±0.005 eV. Some correlations between the parameters from the luminescence-decay formulae are given. The results are in good agreement with luminescence due to radiative recombinations at donor F-type levels in which complexes formed by oxygen vacancies in a disordered sublattice are involved.     

Characterization of the electronic excitations in Alq3 using electron energy-loss spectroscopy

We have studied the electronic excitations of tris-(8-hydroxyquinoline)-aluminium(III) (Alq₃) thin films using electron energy-loss spectroscopy in transmission. This allowed us to derive an effective dielectric function of such films in a large energy range. Moreover, an analysis of the momentum dependence of the lowest lying excitation allowed us to gain information on its localization. We show that this excitation does not disperse, i.e., is localized in the condensed phase. In contrast to many other molecular organic semiconductors, its spectral weight does not follow the behavior of a simple dipole-allowed electronic transition.     

Ambipolar organic field-effect transistors on unconventional substrates

In this paper we report on the realization of flexible all-organic ambipolar field-effect transistors (FETs) realized on unconventional substrates, such as plastic films and textile yarns. A double layer pentacene-C₆₀ heterojunction was used as the semiconductor layer. The contacts were made with poly(ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS) and patterned by means of soft lithography microcontact printing (μCP). Very interestingly growing C₆₀ on a predeposited pentacene buffer layer leads to a clear improvement in the morphology and crystallinity of the film so it obtains n-type conduction despite the very high electron injection barrier at the interface between PEDOT:PSS and C₆₀. As a result, it was possible to obtain all-organic ambipolar FETs and to optimize their electrical properties by tuning the thicknesses of the two employed active layers. Moreover, it will be shown that modifying the triple interface between dielectric/semiconductor/electrodes is a crucial point for optimizing and balancing injection and transport of both kinds of charge carriers. In particular, we demonstrate that using a middle contact configuration in which source and drain electrodes are sandwiched between pentacene and C₆₀ layers allows significantly improving the electrical performance in planar ambipolar devices. These findings are very important because they pave the way for the realization of low-cost, fully flexible and stretchable organic complementary circuits for smart wearable and textile electronics applications.     

3-d chemical imaging using angle-scan nanotomography in a soft X-ray scanning transmission X-ray microscope

Three-dimensional chemical mapping using angle scan nanotomography in a soft X-ray scanning transmission X-ray microscope (STXM) has been used to investigate the spatial distributions of a low density polyacrylate polyelectrolyte ionomer inside submicron sized polystyrene microspheres. Acquisition of tomograms at multiple photon energies provides true, quantifiable 3-d chemical sensitivity. Both pre-O 1s and C 1s results are shown. The study reveals aspects of the 3-d distribution of the polyelectrolyte that were inferred indirectly or had not been known prior to this study. The potential and challenges for extension of the technique to studies of other polymeric and to biological systems is discussed.