Surface spin-polarized currents generated in topological insulators by circularly polarized synchrotron radiation and their photoelectron spectroscopy indication

A new method for generating spin-polarized currents in topological insulators has been proposed and investigated. The method is associated with the spin-dependent asymmetry of the generation of holes at the Fermi level for branches of topological surface states with the opposite spin orientation under the circularly polarized synchrotron radiation. The result of the generation of holes is the formation of compensating spin-polarized currents, the value of which is determined by the concentration of the generated holes and depends on the specific features of the electronic and spin structures of the system. The indicator of the formed spin-polarized current can be a shift of the Fermi edge in the photoelectron spectra upon photoexcitation by synchrotron radiation with the opposite circular polarization. The topological insulators with different stoichiometric compositions (Bi_1.5Sb_0.5Te_1.8Se_1.2 and PbBi₂Se₂Te₂) have been investigated. It has been found that there is a correlation in the shifts and generated spin-polarized currents with the specific features of the electronic spin structure. Investigations of the graphene/Pt(111) system have demonstrated the possibility of using this method for other systems with a spin-polarized electronic structure.     

Spin-dependent quantum transport through an Aharonov--Bohm structure spin splitter

Using the tight-binding model approximation, this paper investigates theoretically spin-dependent quantum transport through an Aharonov-Bohm （AB） interferometer. An external magnetic field is applied to produce the spinpolarization and spin current. The AB interferometer, acting as a spin splitter, separates the opposite spin polarization current. By adjusting the energy and the direction of the magnetic field, large spin-polarized current can be obtained.     

Equation of State of Spin-Polarized Neutron Metier

Within the spin-dependent Brueckner-Hatree-Fock framework, the equation of state of the spin-polarized neutron matter has been investigated by adopting the realistic nucleon-nucleon interaction AV₁₈ supplemented with a microscopic three-body force. The related physical quantities such as spin-symmetry energy, magnetic susceptibility and the Landau parameter G₀ in spin channel, have been extracted. The three-body force effects have been studied and discussed with a special attention. It is shown that in the whole range of spin-polarization, the energy per particle of spin-polarized neutron matter fulfills a quadratic relation versus the spin-polarization parameter δ= (p-p )/p . The predicted spin-symmetry energy is positive in the density region up to ρ = 0.8fm^-3 and increase monotonically as increasing density so that no any evidence is found for a spontaneous transition to a ferromagnetic state in neutron matter. The three-body force effect is to strongly increase the spin-symmetry energy and reduce the magnetic susceptibility at high densities, as a consequence , to make neutron matter become more stable against spin fluctuation. The obtained Landau parameter G₀ and its density dependence may serve as a constraint on the spin-spin parts of the phenomenological Skyrme and Skyrme-like interactions .     

Spin field emission and state switching in a magnetic tunnel junction

The phenomena of spin tunneling and spin torque transfer between magnetic layers of a tunnel spin-valve setup under weak and strong field emissions of spin-polarized electrons are considered. Bifurcational features of changes in the macrospin states under the impact of a tunnel current are discussed for varying directions of the spin-polarization vector.     

Manipulating edge current spin polarization in zigzag MoS2 nanoribbons

The electronic structure and quantum transport of a zigzag monolayer molybdenum disulfide (MoS₂) nanoribbon are investigated using a six-band tight-binding model. For metallic edge modes, considering both an intrinsic spin–orbit coupling and local exchange field effects, spin degeneracy and spin inversion symmetry are broken and spin selective transport is possible. Our model is a three-terminal field effect transistor with a circular-shaped gate voltage in the middle of scattering region. One terminal measures the top edge current and the other measures the bottom edge current separately. By controlling the circular gate voltage, each terminal can detect a totally spin-polarized edge current. The radius of the circular gate and the strength of the exchange field are important, because the former determines the size of the channel in both S-terminated (top) and Mo-terminated (bottom) edges and the latter is strongly related to unbalancing of the density of spin states. The results presented here suggest that it should be possible to construct spin filters using implanted MoS₂ nanoribbons.     

Observation of a tunneling magnetoresistance effect in magnetic tunneling junctions with a high resistance ferromagnetic oxide Fe2⋅5Mn0⋅5O4 electrode

A high resistance ferromagnetic oxide Fe_2⋅5Mn_0⋅5O₄ (FMO) property as a novel spin injector was investigated with a structure of a magnetic tunneling junction (MTJ) composed of FMO/Al-O/Ni₈₀Fe₂₀, in order to reduce an impedance mismatch problem on molecular spintronics. A tunneling magnetoresistance (TMR) effect in the MTJs was observed. The maximum TMR ratio observed in the MTJs was approximately 0.85% at room temperature (RT), and the spin-polarization of FMO was estimated to be at least 0.94% at RT.     

Inter-particle spin-polarized tunneling in arrays of magnetite nanocrystals

Inter-particle spin-polarized tunneling was measured in an organically capped magnetite nanocrystal (NC) array deposited between 30 nm spaced gold electrodes. Magnetoresistance (MR) measurements performed around the blocking temperature (T_b) of the magnetic moments of the particles in the array, which was relatively high (220 K), yielded negative MR values of the order of 10-25% under moderate magnetic fields of several kOe. The field dependence of the MR followed closely the square of the film's magnetization and its voltage dependence indicated maximal spin polarization around the Fermi level. These findings suggested that the measured MR is the result of spin-polarized tunneling between individual magnetite NCs acting as superparamagnetic spin polarizers.     

Spin-polarized tunneling in a ferromagnetic graphene junction: Interplay between the exchange interaction and the orbital effect of the magnetic field

The influence of magnetic vector potential barrier (MVPB) on the spin-polarized transport of massless Dirac particles in ferromagnetic graphene is studied theoretically. The phenomenon of Klein tunneling of relativistic particles across a rectangular potential barrier prevents any of the massless fermions from being confined but they can be electrically confined by quantum dots with integrable dynamics (Bardarson et al., 2009) [36]. Utilization of only the in-plane exchange splitting in the ferromagnetic graphene cannot produce 100% spin polarization. This tunneling can be confined using the magnetic vector potential barrier, which leads to high degree of spin polarization. By combining the orbital effect and the Zeeman interaction in graphene junction, it is found that the junction mimics behavior of half-metallic tunneling junction, in which it acts as a metal to particles of one spin orientation but as an insulator or a semiconductor to those of the opposite orientation. The idea of the half-metallic tunneling junction can provide a source of ∼100% spin-polarized current, which is potentially very useful. Adjustment of the position of the Fermi level in ferromagnetic layer by placing a gate voltage on top of the ferromagnetic layer shows that reverse of the orientation of the completely spin-polarized current passing through the junction is controlled by adjusting the gate voltage. These interesting characteristics should lead to a practical gate voltage controlled spin filtering and spin-polarized switching devices as a perfect spin-polarized electron source for graphene-based spintronics.     

Cr adsorption induced magnetism in Bi2Se3 film by proximity effects

Based on first-principles calculations within density functional theory, we studied the effects of Cr adsorption on the electronic and magnetic properties of Bi₂Se₃ topological insulators employing spin–orbit coupling (SOC) self-consistently. Cr atom induces a spin-polarization with total net magnetic moments of 2.157 μ_B (spin up). There is a p-d hybridization between the Cr 3d states and the nearest neighbor Se 4p states. A peak of density of states appears at Fermi level. The electronic structures change and the energy levels split near the Fermi level. No gap opening has been found at the Dirac point of the surface state from the bottom surface.     

Parity violation in a single domain of spin-triplet Sr2RuO4 superconductors

We observed an unconventional parity-violating vortex in single domain Sr₂RuO₄ single crystals using a transport measurement. The current–voltage characteristics of submicron Sr₂RuO₄ show that the induced voltage has anomalous components which are even functions of the bias current. The results may suggest that the vortex itself has a helical internal structure characterized by a Hopf invariant (a topological invariant). We also discuss that the hydrodynamics of such a helical vortex causes the parity violation to retain the topological invariant.     

A tunable spatial spin splitter based on a spin–orbit-coupling modulated magnetic nanostructure

We investigate theoretically the spin-dependent Goos–Hänchen (GH) effect in a magnetic nanostructure modulated by spin–orbit coupling (SOC), which can be experimentally realized by depositing a ferromagnetic (FM) stripe and a Schottky-metal (SM) stripe on the top and bottom of an InAs/Al_xIn_1?xAs heterostructure, respectively. We consider two kinds of different SOCs (Rashba and Dresselhaus types), and calculate the GH shift and its spin polarization for the electrons across the device. Results show that the GH shift still is spin-polarized after including the SOC, and the behavior of the spin-polarized electrons can be manipulated by the Rashba and/or Dresselhaus SOC. These interesting properties provide an alternative scheme for spatially realizing spin injection into a semiconductor, and the magnetic nanostructure can be employed as a controllable spatial spin splitter for a spin-polarized source in spintronics.     

Spin-polarized current in a Rashba ring pumped by a microwave field

We report a theoretical study on generation of a spin polarized charge current with arbitrary spin polarization, including the fully-spin-polarized current. In a two-terminal mesoscopic ring device, the Rashba spin-orbit coupling (RSOC) is considered as well as a microwave field applied on one of arms of the ring. It is shown that at zero external bias a spin current can be produced in addition to the usual charge current pumped by the microwave field, which is attributed to the the quantum interference effect of the RSOC induced spin precession phase. By varying the system parameters such as the microwave frequency and the RSOC strength, not only the magnitude but also the direction of the spin current can be efficiently controlled, moreover, the spin-polarization degree of the charge current can readily be tuned by these system parameters in the range [-1,1]. Since all the parameters can be controlled electrically in our study, the proposed device may shed light on the possibility of an all-electrical generation and tuning of a spin-polarized current in the field of the spintronics.     

自旋极化度对GaAs量子阱中吸收饱和效应与载流子复合动力学的影响研究

本文研究了(001) GaAs量子阱薄膜中重空穴激子近共振抽运-探测的载流子自旋弛豫动力学, 发现载流子的自旋极化对传统的线偏振光吸收饱和效应和载流子复合动力学都有影响. 进一步的抽运流依赖的自旋弛豫和复合动力学研究表明, 自旋极化对线偏振光的吸收饱和效应的影响随抽运流降低而变弱. 在低激发流时, 自旋极化对线偏振吸收饱和效应的影响才可忽略. 然而, 又显现出自旋极化对复合动力学的影响. 分析表明复合动力学的自旋极化依赖性起源于重空穴激子形成浓度的自旋极化依赖性. 复合动力学的自旋极化依赖性表明自旋弛豫时间计算中所涉及的复合时间应该使用自旋极化载流子的复合时间. 基于二维质量作用定律的激子浓度计算表明, 库仑屏蔽效应对激子形成的影响在较低激发载流子浓度下可以忽略.     

Spin domain mapping of a CrO2 thin film using spin-polarized current microscopy

We investigate spin domain mapping of a CrO₂ thin film using spin-polarized current microscopy at room temperature, where conductive atomic force microscopy (CAFM) with a CrO₂-coated tip is used. The nanoscale spin domains of the CrO₂ thin film were crosschecked by magnetic force microscopy (MFM). Notably, the CAFM exhibits the spin domains of the CrO₂ thin film with higher resolution than the MFM, which may result from a local point contact between the nanoscale CrO₂-coated tip and surface of the CrO₂ thin film.     

Electron-spin motion: a new tool to study ferromagnetic films and surfaces

When electrons are interacting with a ferromagnetic material, their spin-polarization vector is expected to move. This spin motion, comprising an azimuthal precession and a polar rotation about the magnetization direction of the ferromagnet, has been studied in spin-polarized electron scattering experiments both in transmission and reflection geometry. In this review we show that electron-spin motion can be considered as a new tool to study ferromagnetic films and surfaces and we discuss its application to a number of different problems: (a) the transmission of spin-polarized electrons across ferromagnetic films, (b) the influence of spin-dependent gaps in the electronic band structure on the spin motion in reflection geometry, (c) interference experiments with spin-polarized electrons and (d) the influence of lattice relaxations in ferromagnetic films on the spin motion.     

Spin-dependent current in resonant tunneling diode with ferromagnetic GaMnN layers

The spin-polarized tunneling current through a double barrier resonant tunneling diode (RTD) with ferromagnetic GaMnN emitter/collector is investigated theoretically. Two distinct spin splitting peaks can be observed at current-voltage (I-V) characteristics at low temperature. The spin polarization decreases with the temperature due to the thermal effect of electron density of states. When charge polarization effect is considered at the heterostructure, the spin polarization is enhanced significantly. A highly spin-polarized current can be obtained depending on the polarization charge density.     

Spin-polarization-dependent transport in a quantum dot array coupled with an Aharonov-Bohm ring

In this paper the quantum transport in a dot-array coupled with an Aharonov–Bohm (AB) ring is investigated via single-band tight-binding Hamiltonian. It is shown that the output spin current is a periodic function of the magnetic flux in the quantum unit Φ₀. The resonance positions of the total transmission probability do not depend on the size of the AB ring but the electronic spectrum. Moreover, the persistent currents in the AB ring is also spin-polarization dependent and different from the isolated AB ring where the persistent current is independent of spin polarization.     

Superexchange interaction enhancement of the quantum transport in a DNA-type molecule

We use the transfer matrix method and the Green function technique to theoretically study the quantum tunnelling through a DNA-type molecule. Ferromagnetic electrodes are used to produce the spin-polarized transmission probability and therefore the spin current. The distance-dependent crossover comes from the topological variation from the one-dimensional to the two-dimensional model transform as we switch on the interstrand coupling; a new base pair will present N-1 extrachannels for the charge and spin as N being the total base pairs. This will restrain the decay of the transmission and improve the stability of the quantum transport. The spin and charge transfer through the DNA-type molecule is consistent with the quantum tunneling barrier.     

Hydrodynamics of spin-polarized transport and spin pendulum

The dynamics of a nonequilibrium spin system dominated by collisions preserving the total quasimomentum of the interacting electrons and quasiparticles is considered. An analysis of the derived hydrodynamic equations shows that weakly attenuated spin-polarization waves associated with an oscillating drift current can exist in a magnetically inhomogeneous conducting ring. Spin-polarized transport in a ballistic regime of wave propagation through a conductor is also considered, and a simple method is proposed for distinguishing these waves from spin and current oscillations that develop in the hydrodynamic regime. It is shown that a potential difference arises between the leads of an open nonuniformly spin-polarized conductor as a manifestation of spin polarization of electron density. This spin-mediated electrical phenomenon occurs in both hydrodynamic and diffusive limits.     

Photoemission of spin-polarized electrons from negative electron affinity GaAsP

GaAs_0.62P_0.38 activated to negative electron affinity and irradiated with circularly polarized light of a wavelength shorter than approximately 680 nm emits electrons whose spins are mainly oriented antiparallel to the photon spins. At 650 nm a degree of electron spin polarization around 40% is observed. The spectrum of spin polarization of the photoelectrons is similar to that known from GaAs cathodes but is shifted to shorter wavelengths. 25 μA current of spin-polarized electrons were achieved with a 5 mW He-Ne laser.