ZnO:Eu3+纳米晶的制备及发光性质研究

为了探讨稀土Eu3 与纳米ZnO基质之间的能量传递,利用溶胶-凝胶法(Sol-Cel)制备了ZnO:Eu3 纳米晶,测量了样品的X射线衍射谱(XRD)、光致发光谱(PL)和激发谱(PLE).X射线衍射结果表明,ZnO:Eu3 具有六角纤锌矿晶体结构.观察到稀土Eu3 强而窄的特征发射和ZnO基质弱而宽的可见发射.分析了稀土Eu3 激发态5D0→7F1,5D0→7F3和5D0→7F2特征发射机制.给出了Eu3 离子特征发射的峰值强度随掺Eu3 浓度增加而增强的变化关系,证实了纳米ZnO基质与稀土Eu3 离子之间存在能量传递.比较了Eu3 离子5D0→7Fl磁偶极跃迁(MD)与5D0→7F2电偶极跃迁(ED)的相对强度,证实了在ZnO纳米晶基质中大多数Eu3 占据了对称性较低的格位.     

ZnO∶Tb3+纳米晶的制备及发光性质研究

利用溶胶-凝胶法（Sol-Gel）制备了不同浓度的ZnO∶Tb3+纳米晶，测量了样品的光致发光谱(PL)和激发谱(PLE).在ZnO宽的可见发射背景上，观察到样品在485 nm、544 nm、584 nm和620 nm附近出现了稀土Tb3+的特征发射.给出了ZnO∶Tb3+纳米晶光致发光的峰值强度随掺Tb3+浓度的变化关系，分析了稀土Tb3+的激发态5D4→7F6、5D4→7F5和5D4→7F4的发射机制，证实了稀土Tb3+的特征发射来源于稀土离子内部4f电子的f-f跃迁和ZnO基质与稀土Tb3+离子之间能量传递.     

稀土Tb3+掺杂纳米ZnO的发光性质

ZnO是一种优良的直接宽带隙半导体发光材料(Eg=3.4 eV),具有优异的晶格、光学和电学性质,稀土离子掺杂浓度和热处理温度对ZnO∶Re3 纳米晶发光强度、峰位变化等光学性质具有重要影响.利用溶胶-凝胶法(Sol-Gel),在不同退火温度下,制备了不同浓度的ZnO∶Tb3 纳米晶.室温下,测量了样品的X射线衍射谱(XRD)、光致发光谱(PL)和激发谱(PLE).观察到纳米ZnO基质在520 nm附近宽的绿光可见发射和稀土Tb3 在485,544,584和620 nm附近的特征发射.通过ZnO基质可见发射强度和稀土Tb3 特征发射强度随Tb3 掺杂浓度、退火温度的变化关系,获得了5D4→7F5跃迁的绿色主发射峰最强的样品制备工艺参数,其退火温度为600℃、掺杂浓度为4 at%;给出了稀土Tb3 的激发态5D4→7F6(485 nm),5D4→7F5(544 nm)和5D4→7F4(584 nm)的发射机制;证实了稀土Tb3 与纳米ZnO基质之间存在双向能量传递.     

ZnO∶Eu3^＋纳米晶的制备及发光性质研究

为了探讨稀土Eu^3＋与纳米ZnO基质之间的能量传递,利用溶胶-凝胶法（Sol-Gel）制备了ZnO∶Eu^3＋纳米晶,测量了样品的X射线衍射谱（XRD）、光致发光谱（PL）和激发谱（PLE）。X射线衍射结果表明,ZnO∶Eu^3＋具有六角纤锌矿晶体结构。观察到稀土Eu^3＋强而窄的特征发射和ZnO基质弱而宽的可见发射。分析了稀土Eu^3＋激发态5^D0→7^F1,5^D0→7^F3和5^D0→7^F2特征发射机制。给出了Eu^3＋离子特征发射的峰值强度随掺Eu^3＋浓度增加而增强的变化关系,证实了纳米ZnO基质与稀土Eu^3＋离子之间存在能量传递。比较了Eu^3＋离子5^D0→7^F1磁偶极跃迁（MD）与5^D0→7^F2电偶极跃迁（ED）的相对强度,证实了在ZnO纳米晶基质中大多数Eu^3＋占据了对称性较低的格位。     

Er^3＋／Yb^3＋共掺杂ZnO粉末的上转换发光特性

采用高温氧化法制备了Er3 /Yb3 共掺杂ZnO粉。通过X射线衍射和扫描电镜对其进行了成分和组织结构分析,发现样品主要由ZnO和YbF3组成。在ZnO中测量到少量Er3 和Yb3 ,而YbF3中无Er3 ,故发光主要是由ZnO产生的。在980nm半导体激光器的激发下,观察到由处于激发态能级4F9/2,4S3/2,2H11/2和2H9/2的Er3 离子向基态4I15/2跃迁时发出的波长依次为658,538,522和409nm的上转换发光。在488nmAr 激光器的激发下,观察到了较强的409nm的紫光,466和450nm的弱蓝光以及379nm的紫外光,分别对应于Er3 离子的2H9/2→4I15/2,2P3/2→4I11/2,4F3/2/4F5/2→4I15/2,4G11/2→4I15/2等跃迁。上转换发光强度随激发功率的变化关系表明,488nm激发下紫色上转换荧光为双光子过程,主要是通过Er3 /Yb3 离子间正向和反向的能量传递来实现的。     

球形BaZnF_4∶Yb,Er纳米颗粒的热分解法合成及其上转换发光性质

采用热分解法制备了Ba Zn F4∶Yb,Er纳米颗粒。通过荧光分光光度计、X射线粉末衍射仪(XRD)和透射电子显微镜(TEM)对样品进行了表征。合成样品的形貌为球形,晶相为四方相,平均粒径为8 nm。当敏化剂Yb3+和激活剂Er3+的掺杂摩尔分数分别为20%和4%时,样品的发光性能较好。绿光和红光发射对应的辐射跃迁分别为Er3+离子的2H11/2→4I15/2(绿光)和4S3/2→4I15/2(绿光),以及Er3+离子的4F9/2→4I15/2(红光)。     

Yb~(3+)/Er~(3+)掺杂氟氧化物微晶玻璃的制备与发光性能

采用高温熔融法制备了Yb3+/Er3+掺杂的氟氧化物发光微晶玻璃,确定了最佳熔化温度(1 100℃)和退火温度(440℃,480℃)。测定得到基质玻璃的透过率为85%,掺入稀土后,透过率有所下降,并出现了稀土离子的特征吸收峰。980 nm半导体激光器(LD)激发下样品的上转换发射光谱存在4个明显的发射峰,分别为410,532,546和656 nm,对应于2H9/2→4I15/2,2H11/2→4I15/2,4S3/2→4I15/2和4F9/2→4I15/2跃迁。研究了不同Yb3+/Er3+(摩尔分数)和Er3+浓度对上转换发光强度的影响,当Yb3+∶Er3+=4∶1、Er3+摩尔分数为1.5%时,上转换发光强度达到最高。根据发光强度与泵浦功率之间的关系,确定了上转换发射均为双光子过程。讨论了Yb3+,Er3+离子间的能量传递,建立了上转换发光机制。     

NaLuF4∶Yb3+,Er3+微米晶的制备及上转换发光

采用EDTA辅助法合成了NaLuF4∶Yb3+,Er3+微米晶,用X射线粉末衍射(XRD)对样品的结构进行了表征。XRD分析表明样品NaLuF4为六角相。研究了初始反应溶液的pH值对NaLuF4∶Yb3+,Er3+微米晶的组分、形貌和荧光性质的影响。在980 nm光激发下,观察到了4G11/2→4I15/2、2H9/2→4I15/2、2H11/2→4I15/2、4S3/2→4I15/2和4F9/2→4I15/2发射,荧光强度比I(2H11/2/4S3/2→4I15/2)/I(4F9/2→4I15/2)和I(4G11/2/2H9/2→4I15/2)/I(2H11/2/4S3/2→4I15/2)随着pH值的变化而变化。研究了样品的上转换发光机制。     

Yb^3＋/Er^3＋掺杂氟氧化物微晶玻璃的制备与发光性能

采用高温熔融法制备了Yb3＋/Er3＋掺杂的氟氧化物发光微晶玻璃,确定了最佳熔化温度（1 100℃）和退火温度（440℃,480℃）。测定得到基质玻璃的透过率为85%,掺入稀土后,透过率有所下降,并出现了稀土离子的特征吸收峰。980 nm半导体激光器（LD）激发下样品的上转换发射光谱存在4个明显的发射峰,分别为410,532,546和656 nm,对应于2H9/2→4I15/2,2H11/2→4I15/2,4S3/2→4I15/2和4F9/2→4I15/2跃迁。研究了不同Yb3＋/Er3＋（摩尔分数）和Er3＋浓度对上转换发光强度的影响,当Yb3＋∶Er3＋=4∶1、Er3＋摩尔分数为1.5%时,上转换发光强度达到最高。根据发光强度与泵浦功率之间的关系,确定了上转换发射均为双光子过程。讨论了Yb3＋,Er3＋离子间的能量传递,建立了上转换发光机制。     

氨基磷酸辅助的水热合成NaYF4:Yb3+,Er3+纳米晶及其上转换发光

以氨基磷酸为螯合剂,通过共沉淀与水热法相结合,成功地制备出NaYF4:Yb3+,Er3+纳米晶.研究结果表明:水热前后NaYF4:Yb3+,Er3+纳米晶均为立方相结构,其颗粒大小约为80nm.在980 nm近红外光激发下,实现了样品的上转换发光.样品的上转换绿红光发射带归因于Er3+的2H11/2,4S3/2→4 I15/2和4F9/2 →4I15/2能级的跃迁.水热处理后的样品的上转换发光强度与水热处理前相比有了很大的增强.水热处理后,样品表面的有机配体的减少和样品结晶度的提高是样品上转换发光显著增强的主要原因.     

1.54 μm emission mechanism of Er-doped zinc oxide thin films

Zinc oxide (ZnO) and Er-doped zinc oxide (ZnO:Er) thin films were formed by pulsed laser deposition, and characterized by photoluminescence (PL) and X-ray diffraction (XRD) in order to clarify the 1.54 μm emission mechanism in the ZnO:Er films. Er ions were excited indirectly by the 325 nm line of a He-Cd laser, and the comparison of the ultraviolet to infrared PL data of ZnO and ZnO:Er films showed that the 1.54 μm emission of Er³⁺ in ZnO:Er film appears at the expense of the band edge emission and the defect emission of ZnO. The crystallinity of the films was varied with the substrate temperature and post-annealing, and it was found that the intensity of the 1.54 μm emission is strongly related with the crystallinity of the films. There are three processes leading to the 1.54 μm emission; absorption of excitation energy by the ZnO host, energy transfer from ZnO to Er ions, and radiative relaxation inside Er ions, and it is suggested that the crystallinity plays an important role in the first two processes.     

Luminescence properties of a new green emitting Eu2+-doped barium chlorosilicate phosphor

A new intense green light-emitting phosphor, the Eu²⁺-doped (BaO–BaCl₂–SiO₂) phosphor system, was synthesized at 800°C by the conventional high-temperature solid-state reaction. Its structure and luminescence properties were investigated by using thermogravimetry-differential scanning calorimetry (TG-DSC), X-ray diffraction (XRD), diffuse reflection spectra, photoluminescence (PL) and photoluminescence excitation (PLE) spectra. The photoluminescence spectrum reveals that this phosphor can be efficiently excited by near-ultraviolet (UV) light and blue light in the wavelength region covering 280 and 480 nm, which perfectly matches the emission wavelength of near-UV light-emitting diodes (LEDs). It emits an intense green light peaking at 502 nm, which is promising to develop possible applications for white LEDs.     

Eu3+掺杂MMoO4(M=Ca,Sr)荧光粉的表征及发光性质

本文采用简易的Pechini方法制备了Eu3+掺杂MMoO4(M=Ca,Sr)红色荧光粉.产物的结构、形貌和性质分别通过X射线衍射(XRD)、扫描电子显微镜(SEM)、光致发光发射谱(PL)和激发谱(PLE)进行表征分析.XRD表明反应得到了纯相目标掺杂产物,SEM照片显示两种体系掺杂产物形貌均匀性不同,Eu3+掺杂C...     

Broad excitation of Er luminescence in Er-doped HfO2 films

We investigated the broad and sensitized luminescence properties of Er-doped HfO₂ films synthesized by pulsed laser deposition (PLD) and ion implantation techniques. In the investigation we focused on the mechanism of energy transfer in the host matrix. Based on the comparison of photoluminescence (PL), photoluminescence excitation (PLE), and cathode-luminescence (CL), as well as on microstructure measurements, an excitation transfer process resulting in the broad excitation for Er, luminescence at 1540 nm, is identified. In this process, the oxygen vacancies and Hf in the host HfO₂ serve mainly as effective sensitizers for neighboring Er ions in the nonresonant excitation process. Furthermore, the direct Er³⁺ intra-4f transitions and full spectral emission of Er ions in the HfO₂ matrix are clearly observed under the wide-spectrum excitation in the CL measurement. This reveals more detailed features for the energy transfer and transition processes.     

近紫外荧光粉SrAl_2Si_2O_8∶Ce~(3+)的光致发光特性

采用高温固相反应法制备了xCe~(3+)(x=0.01%,0.05%,0.10%和0.30%)激活的Sr_(1-x)Al_2Si_2O_8近紫外荧光粉,利用X射线衍射(XRD)和扫描电镜(SEM)检测出荧光粉的物相结构,通过光致发光谱(PL)和激发光谱(PLE)表征了荧光粉的发光性质。结果显示,在中波紫外光激发下,发射峰位于长波紫外区,归属于Ce~(3+)的5d→2 F5/2和5d→2 F7/2跃迁。激发波长308nm时,观察到近紫外SrAl_2Si_2O_8荧光粉的发光强度随Ce~(3+)掺杂量增加而先增大后减小,同时发射峰位置红移。280和325nm波长选择性激发条件下的差异性发射行为表明SrAl_2Si_2O_8∶Ce~(3+)具有两种性质不同的发光中心,该结论由监测320和390nm发射时获得的形状具有明显区别的激发光谱亦可得以验证。离子半径的匹配性支持Ce~(3+)优先取代Sr~(2+),同时Van Uitert的经验公式估算结果推断出低浓度的Ce~(3+)生成九配位的Ce(Ⅰ)发光中心,高浓度掺杂情况下部分相互近邻的Ce~(3+)有效配位数减小,形成八配位的Ce(Ⅱ)发光中心。紫外280nm激发下峰位348nm的发射谱带源于Ce(Ⅰ)和Ce(Ⅱ)发光中心共同贡献,紫外325nm激发下发射峰位于378nm的发射带则主要对应于Ce(Ⅱ)发光中心。紫外光激发下Ce~(3+)发射出较强的近紫外光,表明SrAl_2Si_2O_8∶Ce~(3+)是一种适用于研发紫外荧光光源的荧光粉体材料。     

Investigation of emission properties of Tm3＋：Y2O3 transparent ceramic

A transparent and emitting ceramic of Y 2 O 3 doped with 6% Tm 3+ ions is fabricated by vacuum sintering with ZrO 2 . Absorption, photoluminescence (PL), and PL excitation (PLE) spectra are investigated in a spectral range of 200 to 2 100 nm at various temperatures between 296 and 12 K. Intense emission band appears at 450 to 465 nm in the visible range. Near-infrared emission bands are observed at 1 200 to 1 300 nm and 1 400 to 1 550 nm, with intense peaks at 1 270, 1 450, and 1 523 nm. The luminescence mechanisms and potential applications of the emissions are discussed with the help of Judd-Ofelt theory and PLE spectra.     

下转换材料β-NaYF4:Tb3+,Yb3+的水热法合成和发光性质研究

利用水热法合成了粉末发光材NaYF4:Tb3+,Yb3+分别用X射线衍射(XRD),光致发光谱(PL)和激发谱(PLE)测试了合成材料的物相结构和发光性质.研究结果表明:合成的NaYF4:Tb3+,Yb3+抖材料为六方相的品体,无立方相的.改变Tb3+和Yb3+的掺杂浓度后品格结构没有变化,说明离子Tb3+和Yb3+取...