Si homojunction structured near-infrared laser based on a phonon-assisted process

We fabricated several near-infrared Si laser devices (wavelength ～1300 nm) showing continuous-wave oscillation at room temperature by using a phonon-assisted process induced by dressed photons. Their optical resonators were formed of ridge waveguides with a width of 10 μm and a thickness of 2 μm, with two cleaved facets, and the resonator lengths were 250–1000 μm. The oscillation threshold currents of these Si lasers were 50–60 mA. From near-field and far-field images of the optical radiation pattern, we observed the high directivity which is characteristic of a laser beam. Typical values of the threshold current density for laser oscillation, the ratio of powers in the TE polarization and TM polarization during oscillation, the optical output power at a current of 60 mA, and the external differential quantum efficiency were 1.1–2.0 kA/cm², 8:1, 50 μW, and 1 %, respectively.     

Electrical,optical and spectral characteristics of type-II ZnSe/ZnTe/GaAs superlattice and MSM-photodetector on their base

We report on growth, fabrication and characterization of the metal–semiconductor–metal (MSM) photodiode based on type-II ZnSe/ZnTe heterostructure. Heterostructure was grown on semi-insulating GaAs substrates by MOVPE. For the first time we present the results of experimental investigations of the MSM photodetector on the base of type-II ZnSe/ZnTe superlattice. The MSM-photodetector demonstrates very low dark current, high current sensitivity and external quantum efficiency. The maximum photoresponse of the MSM-detector at the wavelength 620 nm corresponds to current sensitivity 0.22 A/W and external quantum efficiency 44%. Photoresponse of the MSM-detector shows two peaks of response located at 620 nm and 870 nm. ZnSe/ZnTe type-II superlattice structure reduces the MSM-diode dark current significantly. For the MSM-diode with finger width and gap of 3 µm and 100?×?100 µm² photosensitive area we have obtained dark current density 10^?8 A/cm² at room temperature.     

布拉格反射波导半导体激光器的研究

高功率半导体激光器在固体或光纤激光器泵浦、材料加工、医疗、传感、空间通讯和国防上有着极其重要的应用,但传统半导体激光器面临垂直发散角大、椭圆光斑的难题,限制了其直接应用。为了降低激光器的垂直发散角,本项目采用布拉格反射波导结构,利用光子带隙导引替代传统的全反射进行光场限制,优化设计了多种布拉格反射波导激光器结构,并制备了高性能的激光器器件。首先,采用传输矩阵理论和布洛赫波近似的方法计算了布拉格反射波导的模式色散关系,发现通过控制腔模光场分布,可实现不同远场的激光输出。接着,针对布拉格波导光子带隙导引机制,深入研究了四分之一波长布拉格反射波导激光器、单边布拉格反射波导激光器的光场特性,弄清了影响此类激光器远场的本质因素,最终设计并验证了一种布拉格反射波导双光束激光器,激光器在垂直方向可输出两个对称的、近圆形光束,单光束垂直和侧向发散角半高全宽分别低至7.2°和5.4°。另外,通过调控光缺陷层,使激光器工作在受抑隧穿光子带隙导引机制下,实现了超窄的单光束激光输出,激光器单管连续输出功率超过4.6 W,垂直发散角最低降至4.9°(半高全宽)和9.8°(95%功率)。这种高功率、窄的圆形光束输出可以大幅降低半导体激光器的应用成本,提高泵浦或光纤耦合效率,具有广阔的应用前景。     

Development of exploding wire ion source for intense pulsed heavy ion beam accelerator

A Novel exploding wire type ion source device is proposed as a metallic ion source of intense pulsed heavy ion beam (PHIB) accelerator. In the device, multiple shot operations are realized without breaking the vacuum. The basic characteristics of the device are evaluated experimentally with an aluminum wire of diameter 0.2 mm and length 25 mm. A capacitor bank of capacitance 3 μF and a charging voltage of 30 kV was used, and the wire was successfully exploded by a discharge current of 15 kA with a rise time of 5.3 μs. Plasma flux of ion current density around 70 A/cm² was obtained at 150 mm downstream from the device. The drift velocity of ions evaluated by a time-of-flight method was 2.7×10⁴ m/ s, which corresponds to the kinetic energy of 100 eV for aluminum ions. From the measurement of the ion current density distribution, the ion flow is found to be concentrated toward the direction where the ion acceleration gap is placed. From the experiment, the device is found to be acceptable for applying the PHIB accelerator.     

Microwave power coupling with electron cyclotron resonance plasma using Langmuir probe

Electron cyclotron resonance (ECR) plasma was produced at 2.45 GHz using 200–750 W microwave power. The plasma was produced from argon gas at a pressure of 2 × 10^???4 mbar. Three water-cooled solenoid coils were used to satisfy the ECR resonant conditions inside the plasma chamber. The basic parameters of plasma, such as electron density, electron temperature, floating potential, and plasma potential, were evaluated using the current–voltage curve using a Langmuir probe. The effect of microwave power coupling to the plasma was studied by varying the microwave power. It was observed that the optimum coupling to the plasma was obtained for ~ 600 W microwave power with an average electron density of ~ 6 × 10¹¹ cm^???3 and average electron temperature of ~ 9 eV.     

Optimization of rechargeable zinc-air battery with Co<Subscript>3</Subscript>O<Subscript>4</Subscript>/MnO<Subscript>2</Subscript>/CNT bifunctional catalyst: effects of catalyst loading,binder content,and spraying area

The air cathode is the most crucial component for a zinc-air battery (ZAB) system, which inquires fast diffusion of gaseous O₂ and decent bifunctional catalytic performance. Herein, based on our previous attempts, we developed a bi-functional electro-catalyst utilizing co-doped manganese dioxide nanotube/carbon nanotube (CNT) composite to improve the catalytic activity toward both oxygen reduction reaction (ORR) and oxygen evolution reaction (OER). A simple characterization of the morphology and physicochemical properties of various Co₃O₄/MnO₂/CNT (CMC) composites was performed by employing various techniques (SEM, TEM, and XRD). More importantly, using CMC composite as the bifunctional cathode catalysts, we thoroughly investigated the effects of catalyst loading, bonding layer loading, and spraying area in catalyst layer (CL) on cell performance and charge-discharge cyclic ability for rechargeable zinc-air batteries. The highest peak power density of 400.3 mW cm^?2 can be reached when the catalyst loading is 3 mg cm^?2, the spraying area is 1 cm² and the binder content is 80 μL. The rechargeable zinc-air batteries with the air electrodes containing different spraying areas and bonding layer loadings are stably operated for 22 h at a high current density (100 mA cm^?2) and show a maximum voltage gap of 1.5 V between charge and discharge voltages. All these optimization efforts are particularly important to future large-scale applications in ZAB.

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Influence of contact shape on AlGaN/GaN Schottky diode prepared on Si with thick buffer layer

A report on the fabrication and characterization of high performance conventional and ring-shaped AlGaN/GaN Schottky barrier diode on Si is presented. The resulting device exhibited low leakage current, which led to a detectivity performance of 3.48×10¹³ and 1.76×10¹³ cm?Hz^1/2 W^?1, respectively, for both conventional and ring-shaped Schottky diode. The differential resistances of both devices were obtained at approximately 1.37×10¹² and 1.41×10¹³ Ω, respectively. The zero bias peak responsivities of conventional and ring-shaped Schottky diodes were estimated to be 3.18 and 2.08 A?cm^?2/W, respectively. The typical UV to visible rejection ratio was observed over three orders of magnitude at zero bias. The C–V measurements was used to calculate and analyze the polarization sheet charge density of the AlGaN barrier layer by using self-consistently solving Schrodinger’s and Poisson’s equations. It is demonstrated that the ring shape of the Schottky barrier has higher polarization sheet charge density, which has the consequence that the Schottky shape has influence on the strain of the AlGaN barrier layer.     

Synthesis of single-walled carbon nanotubes in an expanding vapor-gas flow produced by laser ablation of a graphite-catalyst mixture

Single-walled carbon nanotubes (SWCNTs) are synthesized by the ablation of a catalyst-containing carbon target with a cw CO₂ laser. Emphasis is on ablation conditions that are favorable to self-organized SWCNT synthesis. It is shown that the graphite target intensely evaporates with the formation of fractal-like tubes at the edge of the jet when the laser power density exceeds 10⁵ W/cm². Still more favorable conditions for carbon nanotube synthesis are set if the power density lies within 2×10⁴–5×10⁴ W/cm². Under these conditions, both individual SWCNTs and their bundles of diameter from 1.1 to 1.5 nm are produced, as shown by Raman scattering and electron microscopy studies. In this series of experiments, the maximal fraction of SWCNTs reaches 20%. A mechanism of SWCNT fast growth in the laser torch is suggested.     

Spatial-temporal measurements of magnetic fields in laser-produced plasmas

The results of an investigation of the electromagnetic wave polarization, probing high-temperature laser plasma, as well as spatial-temporal structure of the magnetic fields, electron density, current density, and electron drift velocity are presented. To create the plasma, plane massive Al targets were irradiated with the second harmonic of a phoenix Nd laser at intensities up to 5·10¹⁴ W/cm². It was shown that the magnetooptical Faraday effect is the main mechanism responsible for the changing polarization of the probing wave. Magnetic fields up to 0.4 MG with electron densities ∼10²⁰ cm⁻³ were measured. Analysis of the magnetic field spatial distribution showed that the current density achieved the value ∼90 MA/cm² on the laser axis. The radial structure of the magnetic field testified to the availability of the reversed current in the laser plasma. The spatial and temporal resolutions in these experiments were equaled to ∼5 μsec and ∼50 psec, respectively. Translated from Preprint No. 35 of the Lebedev Physics Institute, Moscow, 1993.     

向列相液晶中弱光引致各向异性衍射图样的研究

研究了弱线偏振光(≈0.16 W/cm²)通过垂直排列C₆₀掺杂的向列相液晶(5CB)薄膜的远场衍射图样.基于取向光折变机理,二波耦合使液晶分子进行二次取向之后,强度为高斯分布的光束通过样品时将形成高斯分布的空间电荷场,偏振光束通过样品时将产生偏振衍射图样.衍射图样的轮廓是同心圆环,在垂直于光的偏振方向有对称缺口.改变入射光的偏振方向可以看到衍射图样也随之改变, 有效非线性折射率系数n₂≈0.3cm²/W 关键词： 向列相液晶 取向光折变效应 自相位调制 衍射图样     

Electrochemical impedance spectroscopy analysis of porous silicon prepared by photo-electrochemical etching: current density effect

Electrical impedance characteristics of porous silicon nanostructures (PSiNs) in frequency function were studied. PSiNs were prepared through photo-electrochemical etching method at various current densities (15–40 mA/cm²) and constant etching time. The atomic force microscope images of PSiNs show that pore diameter and roughness increase when current density increases to 35 mA/cm². The surface roughness subsequently decreases because of continuous etching of pillars, and a second etching process occurs. Photoluminescence spectra show blue and red shift with increasing applied current density that is attributed to PSiNs size. Variations of electrical resistance and capacitance values of PSiNs were measured using electrochemical impedance spectroscopy analysis. These results indicate that PSiNs prepared at 20 mA/cm² current density have uniform porous structures with a large number of pillars. Furthermore, this PSiNs structure influences large values of charge transfer resistance and double layer capacitance, indicating potential application in sensors.     

X-ray emission from plasma generated by nanosecond laser irradiating tantalum

A continuum spectrum of X-rays, originating from the interaction of a moderate intensity nanosecond Nd:Yag laser (1064 nm, 9 ns, 30 Hz, 900 mJ, 10¹¹ W/cm²) with metal targets producing plasma, is investigated. The photon emission intensity is particularly high when the plasma expands in a low-pressure gas. The photon energy is measured through selective thin absorber films employed in front of the solid state detector. The temperature of the hot electrons generated from the plasma, responsible for the continuum spectrum emission, is calculated from the fit of the X-ray spectrum with a Maxwellian distribution, and it is about 1–2 keV.     

Surface modification, martensitic transformation, and optical properties of hydrogenated ZrO2 nanocondensates via pulsed laser ablation in water

Pulsed laser ablation on Zr plate in water under Q-switch mode and a fluence of 700 and 800 mJ/pulse for a rather high power density of 1.5 and 1.7 × 10¹¹ W/cm², respectively, was employed to fabricate hydrogenated ZrO₂ nanocondensates. X-ray diffraction and transmission electron microscopic observations indicated such nanocondensates are full of {111} and {100} facets and predominantly in monoclinic (m-) rather than cubic- and/or tetragonal (t-) crystal symmetry in particular when fabricated at 700 mJ/pulse. The hydrogenated ZrO₂ nanocondensates underwent martensitic t ?? m transformation at a rather small critical size (ca. 20 nm) due to H⁺ signature and hence oxygen vacancy deficiency in the lattice. The resultant m-phase was free of twin and fault due to site saturation and rather limited growth of the nanosized particles. Spectroscopic characterizations indicated that the nanocondensates have a significant internal compressive stress, (H⁺, Zr²⁺, Zr³⁺) co-signature and hence a smaller band gap of 5.2?C5.3 eV for potential applications in UV region.     

Bestimmung von Temperatur und Dichte eines Gleitfunkens aus der Bremsstrahlung im Infrarot

The absolute intensity of a vacuum sliding spark (length 2–10 cm, half cycle 0,8 μsec) has been measured in the spectral region between 0,4 and 3μ. From the long wavelength radiation emitted from an optically thick layer, one gets the temperature, from the short wavelength radiation emitted from an optically thin layer, one obtains the density. Using polyethylene as an insulator we reached a temperature of 4·10⁵ °K at electron densities of 8·10¹⁸ cm^?3 and current densities of 1.2·10⁶ A/cm². The temporal development of temperature and density has been determined. The maximum intensity at λ=0.43 μ was found to be 5·10⁴ (7·10¹⁰ W/cm³ ster) as large as that of the positive crater of a properly driven carbon arc. At λ=3 μ this same parameter turned out to be 300 times as large (5·10⁷ W/cm³ ster).     

Electrical characteristics of GaAs MOS capacitor and field effect transistor with atomic layer-deposited TiO2/Al2O3 dielectrics

The (NH₄)₂S treatment can reduce native oxides and passivate GaAs. Atomic layer-deposited Al₂O₃ can further remove the residue native oxides by self-cleaning. Stacked with high dielectric constant TiO₂ prepared by atomic layer deposition on Al₂O₃/(NH₄)₂S-treated GaAs MOS capacitor, the leakage current densities can reach 4.5 × 10^?8 and 3.4 × 10^?6 A/cm² at ±2 MV/cm. The net effective dielectric constant of the entire stack is 18 and the interface state density is about 4.2 × 10¹¹/cm²/eV. The fabricated enhancement-mode n-channel GaAs MOSFET exhibited good electrical characteristics with a maximum g _m of 122 mS/mm and electron mobility of 226 cm²/V s.     

Three-dimensional simulation of laser–plasma-based electron acceleration

A sequential three-dimensional (3D) particle-in-cell simulation code PICPSI-3D with a user friendly graphical user interface (GUI) has been developed and used to study the interaction of plasma with ultrahigh intensity laser radiation. A case study of laser–plasma-based electron acceleration has been carried out to assess the performance of this code. Simulations have been performed for a Gaussian laser beam of peak intensity 5 × 10¹⁹ W/cm² propagating through an underdense plasma of uniform density 1 × 10¹⁹ cm^− 3, and for a Gaussian laser beam of peak intensity 1.5 × 10¹⁹ W/cm² propagating through an underdense plasma of uniform density 3.5 × 10¹⁹ cm^− 3. The electron energy spectrum has been evaluated at different time-steps during the propagation of the laser beam. When the plasma density is 1 × 10¹⁹ cm^− 3, simulations show that the electron energy spectrum forms a monoenergetic peak at ~14 MeV, with an energy spread of ±7 MeV. On the other hand, when the plasma density is 3.5 × 10¹⁹ cm^− 3, simulations show that the electron energy spectrum forms a monoenergetic peak at ~23 MeV, with an energy spread of ±7.5 MeV.     

Picosecond nonlinearity of GeO2–Bi2O3–PbO–TiO2 glasses at 532 and 1,064 nm

The third-order optical properties of GeO₂–Bi₂O₃–PbO–TiO₂ glasses at 532 nm and 1,064 nm were studied to evaluate their potential for optical limiting and all-optical switching. The Z-scan technique was used to determine the nonlinear (NL) refractive index, n ₂, and the NL absorption coefficient, α ₂, of samples with different amounts of the constituent oxides. Values of n ₂ ≈ + 0.7 × 10^?14 cm²/W at 1,064 nm and ≈+1.5 × 10^?14 cm²/W at 532 nm were measured. The NL absorption coefficient, α ₂, was smaller than the minimum that our apparatus can measure (α ₂ < 0.01 cm/GW) in the near-infrared (1,064 nm); in the visible region (532 nm), we obtained α ₂ ≈ 4.4 cm/GW. The set of NL parameters measured indicates the potential usefulness of the GeO₂–Bi₂O₃–PbO–TiO₂ glasses for all-optical switching at 1,064 nm and for optical limiting at 532 nm.     

Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier

The alternating change of electron mobility values in the modulation doped InAlAs/InGaAs/InAlAs quantum well (QW) dependently on a thickness of the InAs layer inserted in the center of the QW is theoretically predicted and experimentally observed. The electron mobility enhancement by a factor of 1.5–2 takes place when the 4 nm-thick InAs layer is inserted into the 17 nm-width QW. The experimental maximal value of the electron drift velocity at the threshold electric field for intervalley electron scattering achieves (1.8?2)×10⁷ cm/s and does not nearly depend on the thickness of the InAs insert. The high value of maximal drift velocity is conserved at the additional doping of the InAs insert up to electron density of 4×10¹² cm^?2 in the QW.     

Properties and structural state of the surface layer in a zirconium alloy modified by a pulsed electron beam and saturated by hydrogen

A pulsed action of an electron beam on a Zr-1% Nb zirconium alloy is studied. Alloy samples are irradiated by three 50-μs pulses at an energy density of 15–25 J/cm², a power of (3–6) × 10⁴ W/cm², a current density of 10–50 A/cm², and an electron energy of 18 keV. This method of processing is found to modify the surface layer of the alloy without changing the structure-phase state of its volume. This surface modification increases the hydrogen saturation resistance of the alloy.     

Polarization and p-type doping effects on photoresponse of separate absorption and multiplication AlGaN solar-blind avalanche photodiodes

The photoresponse characteristics of separate absorption and multiplication (SAM) AlGaN solar-blind avalanche photodiodes (APDs) were investigated in detail. The p-i-n-i-n avalanche photodiodes were examined using the newly designed model of avalanche photodiodes in AlGaN. The research results showed that the dark current density was about 3.51 × 10^?8 A/cm², the light current density was 5.86 × 10^?5 A/cm² under near-zero bias, and the avalanche breakdown occurred at about 135.0 V under reverse bias, which were all consistent with the experimental data. To investigate the effects influencing the photoresponse characteristics of the APDs, their photo responsivity spectra under different biases were simulated. The APD featured a window region over the wavelength range from 260 to 280 nm with a high rejection ratio on the short-wavelength side. Meanwhile, the dependence of APD responsivity on the polarization charge revealed that the negative polarization charges strongly affected the responsivity. Increased negative polarization charges at the Al_0.4Ga_0.6N/Al_0.6Ga_0.4N interface markedly lowered the responsivity, whereas charges of the same polarity at the GaN/Al_0.4Ga_0.6N interface enhanced the responsivity. Furthermore, the dependence of responsivity on p-type doping was analyzed by comparison with the effects of negative polarization charges on the conduction band of the APDs. Finally, the inversion layer models are used to interpret the effects of these on the APD responsivity. This research is useful for exploring polarization and p-type doping effects in SAM AlGaN structures and realization of high responsivity solar-blind APDs.