Synthesis of nickel nanowires via electroless nanowire deposition on micropatterned substrates

Electroless nanowire deposition on micropatterned substrates (ENDOM) is a promising new technique by which to direct the synthesis and precise placement of metallic nanowires. ENDOM is generally applicable to the preparation of metallic, semiconducting, and even insulating nanowires on technologically relevant substrates, is inexpensive, and can achieve high growth rates. The deposited nanowires are ultralong (centimeters) and can be patterned in arbitrary shapes. We demonstrate ENDOM using the growth of nickel nanowires. By controlling the deposition time, the width of the nanowires can be varied from 200 to 1000 nm and the height can be varied from 7 to 20 nm.     

Synthesis and Characterization of ZnO Nanowires

Zinc oxide is a wide bandgap (3.37 eV) semiconductor with a hexagonal wurtzite crystal structure. ZnO prepared in nanowire form may be used as a nanosized ultraviolet light-emitting source. In this study, ZnO nanowires were prepared by vapor-phase transport of Zn vapor onto gold-coated silicon substrates in a tube furnace heated to 900 ?C. Gold serves as a catalyst to capture Zn vapor during nanowire growth. Size control of ZnO nanowires has been achieved by varying the gold film thickness…     

Growth of large-area aligned molybdenum nanowires by high temperature chemical vapor deposition: synthesis, growth mechanism, and device application

Large-area aligned Mo nanowires have been grown on stainless steel substrates by high-temperature chemical vapor deposition with the use of Mo metal. The detailed physical and chemical growth processes regarding the formation of the nanowires have been investigated using mass spectroscopy, thermogravimetry, and differential scanning calorimetry analysis, as well as structure analysis by electron microscopy. In reference to Gibbs energy calculation, our study reveals that the growth relies on the decomposition of MoO2 vapors through condensation of its vapor at high substrate temperatures. The aligned growth is a result of competing growth with the nanowires normal to the substrate surface reaching the final growth front. The field emission measurement and the vacuum luminescent tube study show that the Mo nanowires have potential application as electron emitters.     

Gold-catalyzed low-temperature growth of cadmium oxide nanowires by vapor transport

Ultralong cadmium oxide nanowires were synthesized in high yield on gold-coated silicon substrates by using a vapor transport process. Cadmium vapor generated by the carbothermal reduction of CdO powder in a tube furnace heated to 500 degrees C was carried to the substrate zone by an argon flow with a trace amount of oxygen. The CdO nanowires grew via a vapor-liquid-solid growth mechanism. The diameters of the nanowires are approximately 40-80 nm, and can reach lengths of 30-50 mum. Because the nanowire formation was gold particle catalyzed, patterned nanowire growth on substrates can be achieved. These nanowires grew along the [111] direction and have slightly rough surfaces due to the presence of crystalline CdO shells formed via a physical vapor deposition process. Interesting CdO nanowires with a necklace-like morphology were also observed in a small region of the substrate, where the oxygen supply may be ample to facilitate the lateral growth of rhombohedron-shaped crystals over the straight wires. Electron diffraction and high-resolution TEM results suggest that these side crystals should grow epitaxially on the wire surfaces. The band gap of the CdO nanowires with smoother surfaces was determined to be approximately 2.53 eV. These nanowires exhibit a relatively weak emission band centered at approximately 550 nm.     

Anisotropic wet etched silicon substrates for reoriented and selective growth of ZnO nanowires and enhanced hydrophobicity

Herein we report the fabrication of ZnO nanowires on anisotropic wet etched silicon substrates by selective hydrothermal growth. <100> oriented silicon wafers were first patterned by anisotropic wet etch with a KOH solution, resulting in V-shaped stripes of different periods. Then, a thin layer of gold was deposited and annealed to promote the hydrothermal growth of ZnO nanowires. It was found that the growth rate of ZnO nanowires on <111> surfaces was much higher than that on <100> surfaces. As a first application of such micro- and nanostructured surfaces, we show enhanced wetting properties by measuring the contact angle of water droplets on the samples obtained under different patterning and growth conditions. Our results also demonstrated the possibility of tuning the contact angle of the sample in the range between 115° and 155°, by changing either the pattern of the silicon template or the hydrothermal growth conditions.     

Enhanced nucleation, growth rate, and dopant incorporation in ZnO nanowires

Pure and Co-doped ZnO nanowire arrays were grown on polished silicon substrates with high rates via an electrochemical technique. A negative potential applied to the substrate not only enhances the nucleation density on polished substrates more than 4 orders of magnitude but also increases the growth rate by 35 times over that obtained in the absence of the potential. Furthermore, incorporation of metallic dopants in ZnO nanowires was demonstrated in the low-temperature process. This fast growth technique provides a route to fabrication of low-cost highly oriented ZnO nanowires on polished substrate for industrial applications.     

Systematic study on experimental conditions for large-scale growth of aligned ZnO nanowires on nitrides

In vapor-liquid-solid (VLS) growth, it is generally believed that nanowires would grow as long as the right catalysts and substrate are supplied as well as the growth temperature is adequate. We show here, however, that oxygen partial pressure plays a key role in determining the quality of the aligned ZnO nanowires. We present a "phase diagram" between the oxygen partial pressure and the growth chamber pressure for synthesizing high quality aligned ZnO nanowires on GaN substrate. This result provides a road map for large-scale, controlled synthesis of ZnO nanowires on nitride semiconductor substrates with the potential to meet the needs of practical applications. The chemical process involved in the growth process is also systematically elaborated based on experimental data received under different conditions.     

Characterization and field emission properties of ZnMgO nanowires fabricated by thermal evaporation process

In this paper, we investigate the roles of gold catalyst using modified thermal evaporation set-up in the growth process of ZnMgO nanowires. ZnMgO nanowires are fabricated on silicon substrates using different thickness of gold catalyst. A simple horizontal double-tube system along with chemical vapor diffusion of the precursors, based on Fick’s first law, is used to grow the ZnMgO nanowires. Field emission scanning electron microscopy images show that the ZnMgO nanowires are tapered. The optical properties of the ZnMgO nanowires are characterized by room temperature photoluminescence (PL) measurements. The PL studies demonstrate that the ZnMgO nanowires grown using this method have good crystallinity with excellent optical properties and have a larger band-gap in comparison to the pure ZnO nanowires. Field emission characterization shows that the turn-on field for the nanowires grown on the thinner gold film is lower than those grown on the thicker gold film.     

氧化铟八面体、纳米带、锯齿状纳米线和纳米链的可控合成

在N₂/H₂O混合气流中将硅片上金覆盖的金属铟颗粒加热到800 ℃制备出了不同形貌的In₂O₃纳米结构, 在距铟源不同距离处依次得到In₂O₃的八面体、纳米带、锯齿状纳米线和纳米链. 采用拉曼光谱、扫描电镜、X射线衍射和透射电镜对产物进行了表征分析. 结果表明, 八面体、纳米带、锯齿状纳米线和纳米链均为立方相单晶结构的In₂O₃. 基于气-固和气-液-固生长机理详细分析了八面体、纳米带、锯齿状纳米线和纳米链的生长过程, 提出了不同形貌In₂O₃纳米结构的生长模式.     

Growth of anisotropic gold nanostructures on conducting glass surfaces

In this paper, we describe a method for the growth of gold nanowires and nanoplates starting from a bilayer array of gold seeds, anchored on electrically conducting indium tin oxide (ITO) substrates. This is based on a seed-mediated growth approach, where the nanoparticles attached on the substrate through molecular linkages are converted to nanowires and nanoplates at certain cetyltrimethylammonium bromide (CTAB) concentration. Our modified approach can be used to make nanowires of several tens of micrometers length at a lower CTAB concentration of 0.1 M. The length of the nanowires can be varied by adjusting the time of the reaction. As the concentration of CTAB was increased to 0.25 M, the nanoparticles got converted to nanoplates. These Au nanoplates are (111) oriented and are aligned parallel to the substrate.     

Fabrication of self-supported patterns of aligned beta-FeOOH nanowires by a low-temperature solution reaction

Self-supported patterns of oriented alignment of beta-FeOOH nanowires are fabricated through a simple solution reaction from the complex [Fe(phen)(3)](2+) at 60 degrees C. The alignment of nanowires with a diameter of 40 nm and length of 6 mum is relatively uniform. HRTEM studies show that the growing direction of beta-FeOOH nanowires is perpendicular to the orientation plane of self-formed beta-FeOOH flake-like substrates. In the reaction and crystal growth process, the precursor [Fe(phen)(3)](2+) is undoubtedly vital to the formation of nanowire alignment. In detail, the formation of aligned nanowires is thought to be realized by controlling two competing reactions. Electrochemical and UV-visible measurements suggest that the product might have potential applications in lithium batteries and semiconductor electronics. This synthetic process is simple, mild, clean, reproducible, and free of any template; it provides a novel pathway for the low-temperature growth of nanowires and their simultaneous oriented alignment.     

Growth of High Magnetic α-Fe2O3 and Fe3O4 Nanowires via an Oxide Assisted Vapor-Solid Process

We describes a controllable synthesis procedure for growing α-Fe₂O₃ and Fe₃O₄ nanowires. High magnetic hematite α-Fe₂O₃ nanowires are successfully grown on Fe_0.5Ni_0.5 alloy sub-strates via an oxide assisted vapor-solid process. Experimental results also indicate that previous immersion of the substrates in a solution of oxalic acid causes the grown nanowires to convert gradually into magnetite (Fe₃O₄) nanowires. Additionally, the saturated state of Fe₃O₄ nanowires is achieved as the oxalic acid concentration reaches 0.75 mol/L. The aver-age diameter and length of nanowires expands with an increasing operation temperature and the growth density of nanowires accumulates with an increasing gas flux in the vapor-solid process. The growth mechanism of α-Fe₂O₃ and Fe₃O₄ nanowires is also discussed. The results demonstrate that the entire synthesis of nanowires can be completed within 2 h.     

Controlled growth of large-area, uniform, vertically aligned arrays of alpha-Fe2O3 nanobelts and nanowires

Vertically aligned iron oxide nanobelt and nanowire arrays have been synthesized on a large-area surface by direct thermal oxidation of iron substrates under the flow of O(2). The effects of reactive gas pressure, composition, and temperature have been systematically studied. It was found that nanobelts (width, tens of nanometers; thickness, a few nanometers) are produced in the low-temperature region (approximately 700 degrees C) whereas cylindrical nanowires tens of nanometers thick are formed at relatively higher temperatures (approximately 800 degrees C). Both nanobelts and nanowires are mostly bicrystallites with a length of tens of micrometers which grow uniquely along the [110] direction. The growth habits of the nanobelts and nanowires in the two temperature regions indicate the role of growth rate anisotropy and surface energy in dictating the ultimate nanomorphologies.     

Three dimensional architectures of ultra-high density semiconducting nanowires deposited on chip

We report a "clean" and fast process, utilizing supercritical carbon dioxide, for producing ultrahigh densities, up to 10(12) nanowires per square centimeter, of ordered germanium nanowires on silicon and quartz substrates. Uniform mesoporous thin films were employed as templates for the nucleation and growth of unidirectional nanowire arrays orientated almost perpendicular to a substrate surface. Additionally, these nanocomposite materials display room-temperature photoluminescence (PL), the energy of which is dependent on the diameter of the encased nanowires. The ability to synthesis ultrahigh-density arrays of semiconducting nanowires on-chip is a key step in future "bottom-up" fabrication of multilayered device architectures for nanoelectronic and optoelectronic devices.     

Kinked gold nanowires and their SPR/SERS properties

We report a facile chemical synthesis of kinked gold nanowires through anisotropic growth along the (111) direction with a high density of twin-plane defects. The resulting kinked gold nanowires exhibited pronounced near-IR absorption and were demonstrated as good SERS substrates.     

Formation of gold-silver nanowires in thin surfactant solution films

Thin, long gold/silver nanowires were grown on substrates in thin surfactant solution films. This growth process occurred exclusively in thinning aqueous films as the water evaporated, and elongated surfactant template structures were formed. The nanowire growth depended on the presence of a relatively high concentration of silver ions (typical Ag:Au mole ratio of 1:1). Tuning the pH value to about 5 in the growth solution was crucial for the nanowire growth. Further development of this process may lead to a simple wet chemical technique for the fabrication of relatively uniform arrays of metal nanowires on surfaces.     

Synthesis and characterization of iron silicon boron (Fe5Si2B) and iron boride (Fe3B) nanowires

Single-crystal iron silicon boron (Fe(5)Si(2)B) and iron boride (Fe(3)B) nanowires were synthesized by a chemical vapor deposition (CVD) method on either silicon dioxide (SiO(2)) on silicon (Si) or Si substrates without introducing any catalysts. FeI(2) and BI(3) were used as precursors. The typical size of the nanowires is about 5-50 nm in width and 1-20 mum in length. Different kinds of Fe-Si-B and Fe-B structures were synthesized by adjusting the ratio of FeI(2) vapor to BI(3) vapor. Single-crystal Fe(5)Si(2)B nanowires formed when the FeI(2) sublimator temperature was kept in the range of 540-570 degrees C. If the FeI(2) sublimator temperature was adjusted in the range of 430-470 degrees C, single-crystal Fe(3)B nanowires were produced. Fe(3)B nanowires grow from polycrystalline Fe(5)SiB(2) particles, while Fe(5)Si(2)B nanowires grow out of the Fe(5)Si(2)B layers, which are attached to triangle shaped FeSi particles. Both the ratio of FeI(2) vapor to BI(3) vapor and the formation of the particles (Fe(5)SiB(2) particles for the growth of Fe(3)B nanowires, FeSi particles for the growth of Fe(5)Si(2)B nanowires) are critical for the growth of Fe(3)B and Fe(5)Si(2)B nanowires. The correct FeI(2) vapor to BI(3) vapor ratio assures the desired phase form, while the particles provide preferential sites for adsorption and nucleation of Fe(3)B or Fe(5)Si(2)B molecules. Fe(3)B or Fe(5)Si(2)B nanowires grow due to the preferred growth direction of <110>.     

Direct synthesis of aligned silicon carbide nanowires from the silicon substrates

Aligned silicon carbide nanowires were synthesized directly from the silicon substrates via a novel catalytic reaction with a methane-hydrogen mixture at 1,100 degrees C, with a mean diameter of 40 nm and length of 500 microm; they consist of a single-crystalline zinc blende structure crystal in the [111] growth direction; X-ray diffraction, Raman, and infrared spectroscopy confirm the synthesis of high-purity silicon carbide nanowires.     

采用高分子自组装ZnO纳米线及其形成机理

介绍了一种能在各种晶面的硅衬底上制备垂直于衬底取向生长的ZnO纳米线阵列的新方法. 该法采用高分子络合和低温氧化烧结反应, 以聚乙烯醇(PVA)高分子材料作为自组装络合载体来控制晶体成核和生长. 首先通过PVA侧链上均匀分布的极性基团羟基(—OH)与锌盐溶液中的Zn²⁺离子发生络合作用, 然后滴加氨水调节络合溶液pH值为8.5±0.1, 使络离子Zn²⁺转变为Zn(OH)₂, 再将硅片浸入此溶液中, 从而在硅衬底表面得到较均匀的Zn(OH)₂纳米点, 随后在125 ℃左右Zn(OH)₂纳米点通过热分解转化为ZnO纳米点, 其后在420 ℃烧结过程中衬底上的ZnO纳米点在PVA高分子网络骨架对其直径的限域下逐渐取向生长成ZnO纳米线, 并且烧结初期PVA碳化形成的碳通过碳热还原ZnO为Zn, 再在氧气氛中氧化为ZnO的方式在纳米线顶端形成了催化活性点, 促进了纳米线顶端ZnO的吸收. 烧结后碳逐渐氧化被完全去除. 采用场发射扫描电镜(FE-SEM)、透射电镜(TEM, HR-TEM)和X射线衍射(XRD)对纳米线的分析结果表明, ZnO纳米线在硅衬底上分布均匀, 具有六方纤锌矿结构, 并且大多沿[0001]方向择优取向生长, 直径为20～80 nm, 长度可从0.5至几微米. 提出了聚合物控制ZnO结晶和形貌的网络骨架限域模型以解释纳米线的生长行为.     

Effects of gold catalysts and thermal evaporation method modifications on the growth process of Zn1−xMgxO nanowires

In this paper, we investigate the roles of gold catalysts and thermal evaporation method modifications in the growth process of Zn_1−xMg_xO nanowires. Zn_1−xMg_xO nanowires are fabricated on silicon substrates with and without using a gold catalyst. Characterizations reveal that Mg acts in a self-catalyst role during the growth process of Zn_1−xMg_xO nanowires grown on catalyst-free substrate. The optical properties and crystalline quality of the Zn_1−xMg_xO nanowires are characterized by room temperature photoluminescence (PL) measurements and Raman spectroscopy, respectively. The Raman and PL studies demonstrate that the Zn_1−xMg_xO nanowires grown using the catalyst-free method have good crystallinity with excellent optical properties and have a larger band-gap in comparison to those grown with the assistance of gold.