Determination of the stellar reaction rate for 12C（α,γ）16O： using a new expression with the reaction mechanism

The astrophysical reaction rate of 12C(α, γ)16O plays a key role in massive star evolution. However, this reaction rate and its uncertainties have not been well determined yet, especially at T9=0.2. The existing results even disagree with each other to a certain extent. In this paper, the E1, E2 and total (E1+E2) 12C(α, γ)16O reaction rates are calculated in the temperature range from T9=0.3 to 2 according to all the available cross section data. A new analytic expression of the 12 C(α, γ)16 O reaction rate is brought forward based on the reaction mechanism. In this expression, each part embodies the underlying physics of the reaction. Unlike previous works, some physical parameters are chosen from experimental results directly, instead of all the parameters obtained from fitting. These parameters in the new expression, with their 3σ fit errors, are obtained from fit to our calculated reaction rate from T9=0.3 to 2. Using the fit results, the analytic expression of 12C(α, γ)16O reaction rate is extrapolated down to T9=0.05 based on the underlying physics. The 12C(α, γ)16 O reaction rate at T9=0.2 is (8.78 ± 1.52) × 1015 cm3s-1mol-1. Some comparisons and discussions about our new 12 C(α, γ)16 O reaction rate are presented, and the contributions of the reaction rate correspond to the different part of reaction mechanism are given. The agreements of the reaction rate below T9=2 between our results and previous works indicate that our results are reliable, and they could be included in the astrophysical reaction rate network. Furthermore, we believe our method to investigate the 12C(α, γ)16O reaction rate is reasonable, and this method can also be employed to study the reaction rate of other astrophysical reactions. Finally, a new constraint of the supernovae production factor of some isotopes are illustrated according to our 12C(α, γ)16O reaction rates.     

Optical parameters and energy levels splitting of Ho^3＋ in Ho^3＋： GdVO4

Ho^3＋ ： GdVO4 is a new laser material suitable for high-power laser systems. In this paper we measure the absorption spectra of Ho^3＋ in the sample Ho^3＋： GdVO4. The intensity parameters are calculated by using the Judd-Ofelt theory. Some predicted spectroscopic parameters, such as the spontaneous radiative transition rate, branching ratio and integrated emission cross section are dealt with. And we also compare the optical parameters with those of other materials. From these results, it is found that there are many transitions which have large oscillator strengths and large integrated emission cross sections. Especially the transitions such as ^5 F4 → ^5 I 8, ^5 S2→^5 I8, ^5 F5 → ^5 I8 and ^5 I7 →^ 5 I8 are useful in solid-state lasers and other fields. Finally, we discuss the splitting of the energy levels of Ho^3＋ in the crystal GdVO4 based on the group theory.     

Re-evaluation of the ^23Mg（p,γ） ^24Al reaction rate

Based on a new screening Coulomb model, this paper discusses the effect of electron screening on proton capture reaction of 23Mg. The derived result shows that, in some considerable range of stellar temperatures, the effect of electron screening on resonant reaction is prominent; on the non-resonant reaction the effect is obvious only in the low stellar temperatures. The reaction rates of ^23Mg（p,γ） ^24Al would increase 15%-25% due to the fact that the electron screening are considered in typical temperature range of massive mass white dwarfs, and the results undoubtedly affect the nucleosynthesis of some heavier nuclei in massive mass white dwarfs.     

A CVD diamond film detector for pulsed proton detection

A chemical vapour deposition （CVD） diamond film detector was prepared and the main characteristics for pulsed proton detection were studied at Beijing Tandem Accelerator. The result shows that the charge collection efficiency of the detector increases with increasing electric field intensity and reaches to 9.44% at 5 V/μm with the charge collection distance of 15.9 μm. The relationship between the sensitivity of the detector and proton energy is consistent with the Monte Carlo （MC） simulation result. Its plasma time for a pulse with 4.85×10^5 protons is 1l.2ns. The dose threshold for onset of damage under 9MeV proton irradiation in the detector is about 10^13 cm^-2. All of the results show that a CVD diamond detector has fast time response and high radiation hardness, and can be used in pulsed proton detection.     

New levels and transitions in ^72Ge following thedecay of ^72Ga

The decay of ^72Ga has been investigated by means of γ-ray spectroscopy. The 72Ga nuclei were produced through the ^71Ga(n, γ)^72Ga reaction. The Compton-suppressed spectrometer and high-purity Ge detectors have been used singly and in coincidence, separately, to study γ-rays in the β-decay of ^72Ga to ^72Ge. Ninety-three events of γ-rays were reported, of which 7 were observed for the first time. A decay scheme of ^72Ga including 4 new levels is proposed which accommodates 87 of these transitions. Spins and parities for new levels are proposed from calculated logft values, modes on the observed decay, and some nuclear reaction experimental results.     

A possible experimental observable for the determination of neutron skin thickness

The dependence between neutron skin thickness and neutron abrasion cross section （σnabr） for neutron-rich nuclei is investigated within the framework of the statistical abrasion ablation model. Assuming that the density distributions for proton and neutron are of Fermi-type, and adjusting the diffuseness parameter of neutron density distribution in the droplet model, we find out the good linear correlation between the neutron skin thickness and the abrasion cross section σnabr for neutron-rich nuclei. The uncertainty of neutron skin thickness determined from σnabr is very small. It is suggested that σnabr can be used as a new experimental observable to extract the neutron skin thickness for neutronrich nucleus. The scaling behaviours between neutron skin thickness and σnabr, separately, for isotopes of ^26-35Na, ^44-56Ar, ^48-60Ca, ^67-78Ni are also investigated.     

Dy2 AlFe13 Mn3 化合物的本征磁致伸缩

通过X-射线衍射及磁测量手段研究了Dy2AlFe13Mn3化合物的结构及磁性质。研究结果表明Dy2AlFe13Mn3化合物具有六角相的Th2Ni17型结构。通过X-射线热膨胀测定法发现Dy2AlFe13Mn3化合物在245到344K的温度范围内存在负热膨胀现象，其平均热膨胀系数为α＝-1.1×10-4K-1K-1。在105到360K的温度范围内，通过比较磁性状态下的晶胞参数和由高温顺磁状态外延得到的低温顺磁状态下的晶胞参数间的差别计算了Dy2AlFe13Mn3化合物的本征磁致伸缩。结果表明Dy2AlFe13Mn3化合物的本征体磁致伸缩ωS在105到245K的温度范围内随着温度的升高而增大，由105K时的7.0×10-3 增加到245K时的9.1×10-3。随着温度的进一步升高，ωS反而减小。沿c轴方向的本征线磁致伸缩λc随着温度的升高而减小。基面内的本征线磁致伸缩λa在105到270K的温度范围内随着温度的升高而增大，从105K时的0.8×10-3增大到270K时的3.4×10-3，然后随着温度的进一步升高而减小。     

Enhanced interface properties of diamond MOSFETs with Al_2O_3 gate dielectric deposited via ALD at a high temperature

The interface state of hydrogen-terminated(C–H) diamond metal–oxide–semiconductor field-effect transistor(MOSFET) is critical for device performance. In this paper, we investigate the fixed charges and interface trap states in C–H diamond MOSFETs by using different gate dielectric processes. The devices use Al_2O_3 as gate dielectrics that are deposited via atomic layer deposition(ALD) at 80℃ and 300℃, respectively, and their C–V and I–V characteristics are comparatively investigated. Mott–Schottky plots(1/C~2–VG) suggest that positive and negative fixed charges with low density of about 1011 cm~(-2) are located in the 80-℃-and 300-℃ deposition Al_2O_3 films, respectively. The analyses of direct current(DC)/pulsed I–V and frequency-dependent conductance show that the shallow interface traps(0.46 e V–0.52 e V and0.53 e V–0.56 e V above the valence band of diamond for the 80-℃ and 300-℃ deposition conditions, respectively) with distinct density(7.8 × 10~(13) e V~(-1)·cm~(-2)–8.5 × 10~(13) e V-1·cm~(-2) and 2.2 × 1013 e V~(-1)·cm~(-2)–5.1 × 10~(13) e V~(-1)·cm~(-2) for the80-℃-and 300-℃-deposition conditions, respectively) are present at the Al_2O_3/C–H diamond interface. Dynamic pulsed I–V and capacitance dispersion results indicate that the ALD Al_2O_3 technique with 300-℃ deposition temperature has higher stability for C–H diamond MOSFETs.     

Copper ion beam emission in solid electrolyte Rb4Cu16I6.5Cl13.5

Copper ion conducting solid electrolyte Rb$_{4}$Cu$_{16}$I$_{6.5}$Cl$_{13.5 }$ was prepared by means of mechano-chemical method. The structure and morphology of the powder was investigated by x-ray diffraction and scanning electron microscopy. The grain size was estimated to be 0.2-0.9 μm and the ionic conductivity at room temperature was approximately 0.206 S/cm. The solid electrolyte Rb$_{4}$Cu$_{16}$I$_{6.5}$Cl$_{13.5 }$ was exploited for copper ion beam generation. The copper ion emission current of several nA was successfully obtained at acceleration voltages of 15 kV and temperature of 197 $^\circ$C in vacuum of 2.1$\times10^{-4}$ Pa. A good linear correlation between the logarithmic ion current $(\log I)$ and the square root of the acceleration voltage ($U_{\rm acc}$) at high voltage range was obtained, suggesting the Schottky emission mechanism in the process of copper ion beam generation.     

Spin polarization effect for molecule Ta2

Density functional theory （DFT） （B3p86） has been used to optimize the structure of the molecule Ta2. The result shows that the ground state of molecule Ta2 is a 7-multiple state and its electronic configuration is ^7∑u^＋, which shows the spin polarization effect for molecule Ta2 of transition metal elements for the first time. Meanwhile, spin pollution has not been found because the wavefunction of the ground state does not mix with those of higher states. So, the fact that the ground state of molecule Ta2 is a 7-multiple state indicates a spin polarization effect of molecule Ta2 of the transition metal elements, i.e. there exist 6 parallel spin electrons and the non-conjugated electrons are greatest in number. These electrons occupy different space orbitals so that the energy of molecule Ta2 is minimized. It can be concluded that the effect of parallel spin of the molecule Ta2 is larger than the effect of the conjugated molecule, which is obviously related to the effect of d-electron delocalization. In addition, the Murrell-Sorbie potential functions with parameters for the ground state ^7∑u^＋ and other states of the molecule Ta2 are derived. The dissociation energy De, equilibrium bond length Re and vibration frequency we for the ground state of molecule Ta2 are 4.5513eV, 0.2433nm and 173.06cm^-1, respectively. Its force constants f2, f3 and f4 are 1.5965×10^2aJ.nm^-2, -6.4722×10^3aJ·nm^-3 and 29.4851×10^4aJ·nm^-4, respectively. Other spectroscopic data we xe, Be and αe for the ground state of Ta2 are 0.2078cm^-1, 0.0315 cm^-1 and 0.7858×10^-4 cm^-1, respectively.     

Synthesis and high temperature thermoelectric transport properties of Si-based type-I clathrates

N-type Si-based type-I clathrates with different Ga content were synthesized by combining the solid-state reaction method, melting method and spark plasma sintering (SPS) method. The effects of Ga composition on high temperature thermoelectric transport properties were investigated. The results show that at room temperature, the carrier concentration decreases, while the carrier mobility increases slightly with increasing Ga content. The Seebeck coefficient increases with increasing Ga content. Among all the samples, Ba_7.93Ga_17.13Si_28.72 exhibits higher Seebeck coefficient than the others and reaches -135~μ V.K^-1 at 1000 K. The sample prepared by this method exhibits very high electrical conductivity, and reaches 1.95× 10⁵S.m^-1 for Ba_8.01Ga_16.61Si_28.93 at room temperature. The thermal conductivity of all samples is almost temperature independent in the temperature range of 300--1000~K, indicating the behaviour of a typical metal. The maximum {ZT} value of 0.75 is obtained at 1000~K for the compound Ba_7.93Ga_17.13Si_28.72.     

MgF2单晶中位错缺陷的ESR谱——含有130多条谱线

在室温条件下的激光晶体MgF2单晶中，实验发现含有130多条峰的电子自旋共振(ESR)波谱。两个样品分别取自MgF2单晶生长放肩的尖锥部位和MgF2:Co晶体.两个样品都没有经过任何辐照处理。两个样品具有相同的各向异性谱，说明掺入的Co2+离子引发了与MgF2单晶放肩部位相同的位错缺陷，产生了相同的多核固体自由基。这些顺磁固体自由基稳定且寿命长，产生的ESR信号是各向异性的。经初步计算拟合，谱线是由三种不同的多核自由基产生的。当磁场方向与晶体的[100]或[010]方向平行时，样品的ESR信号出现在磁场从0.2292特斯拉（T）到0.4654T的0.2362T范围内（相当于能带宽度为0.233eV）。最窄的线宽DH约为0.00128特斯拉，DH相当于相邻的能级差,是非常小的，仅有1.85×10-7eV 或1.46×10-3cm-1。这一事实表明其基态简并度是相当高的，在不太高的直流磁场下几乎是一个由准连续的能级组成的能带。这有可能成为可调谐的固体激光介质的新基点。     

Spin polarization effect for Os2 molecule

Density functional Theory （DFT） （B3p86） of Gaussian03 has been used to optimize the structure of Os2 molecule. The result shows that the ground state for Os2 molecule is 9-multiple state and its electronic configuration is ^9∑^＋g, which shows spin polarization effect of Os2 molecule of transition metal elements for the first time. Meanwhile, we have not found any spin pollution because the wavefunction of the ground state does not mingle with wavefunctions with higher energy states. So, the fact that the ground state for Os2 molecule is a 9-multiple state is indicative of spin polarization effect of Os2 molecule of transition metal elements. That is, there exist 8 parallel spin electrons. The non-conjugated electron is greatest in number. These electrons occupy different spacious tracks, so that the energy of Os2 molecule is minimized. It can be concluded that the effect of parallel spin of Os2 molecule is larger than the effect of the conjugated molecule, which is obviously related to the effect of electron d delocalization. In addition, the Murrell-Sorbie potential functions with the parameters for the ground state ^9∑^＋g and other states of Os2 molecule are derived. Dissociation energy De for the ground state of Os2 molecule is 3.3971eV, equilibrium bond length Re is 0.2403nm, vibration frequency ωe is 235.32cm^-1. Its force constants f2, f3, and f4 are 3.1032×10^2aJ·nm^-2, -14.3425×10^3aJ·nm^-3 and 50.5792×10^4aJ·nm^-4 respectively. The other spectroscopic data for the ground state of Os2 molecule ωexe, Be and ae are 0.4277cm^- 1, 0.0307cm^- 1 and 0.6491 × 10^-4cm^-1 respectively.     

The fabrication of nickel silicide ohmic contacts to n-type 6H-silicon carbide

This paper reports that the nickel silicide ohmic contacts to n-type 6H-SiC have been fabricated. Transfer length method test patterns with NiSi/SiC and NiSi硅化镍;欧姆触点;n型碳化硅;制造;能带;带隙Project supported by the National Basic Research Program of China (Grant No~2002CB311904), the National Defense Basic Research Program of China (Grant No~51327010101) and the National Natural Science Foundation of China (Grant No~60376001).2006-09-192006-10-30This paper reports that the nickel silicide ohmic contacts to n-type 6H-SiC have been fabricated. Transfer length method test patterns with NiSi/SiC and NiSi2/SiC structure axe formed on N-wells created by N^＋ ion implantation into Si-faced p-type 6H-SiC epilayer respectively. NiSi and NiSi2 films are prepared by annealing the Ni and Si films separately deposited. A two-step annealing technology is performed for decreasing of oxidation problems occurred during high temperature processes. The specific contact resistance Pc of NiSi contact to n-type 6H-SiC as low as 1.78× 10^-6Ωcm^2 is achieved after a two-step annealing at 350 ℃for 20 min and 950℃ for 3 min in N2. And 3.84×10-6Ωcm^2 for NiSi2 contact is achieved. The result for sheet resistance Rsh of the N＋ implanted layers is about 1210Ω/□. X-ray diffraction analysis shows the formation of nickel silicide phases at the metal/n-SiC interface after thermal annealing. The surfaces of the nickel silicide after thermal annealing are analysed by scanning electron microscope.     

Superhydrophobic surfaces via controlling the morphology of ZnO micro/nano complex structure

ZnO micro/nano complex structure films, including reticulate papillary nodes, petal-like and flake-hole, have been self-assembled by a hydrothermal technique at different temperatures without metal catalysts. The wettability of the above film surfaces was modified with a simple coating of heptadecafluorodecyltrimethoxy-silane in toluene. After modifying, the surface of ZnO film grown at 50~${^\circ}$C was converted from superhydrophilic with a water contact angle lower than 5$^{\circ}$ to superhydrophobic with a water contact angle of 165$^{\circ}$. Additionally, the surface of reticulate papillary nodes ZnO film grown at 100~${^\circ}$C had excellent superhydrophobicity, with a water contact angle of 173$^{\circ}$ and a sliding angle lower than 2$^{\circ}$. Furthermore, the water contact angle on the surface of petal-like and flake-hole ZnO films grown at 150~${^\circ}$C and 200~${^\circ}$C were found to be 140$^{\circ}$ and 120$^{\circ}$, respectively. The wettability for the samples was found to depend strongly on the surface morphology which results from the growth temperature.     

Isotopic effect of Cl2+ rovibronic spectra in the A-X system

This paper studies the isotopic effect of Cl2+ rovibronic spectra in the A2Πu(Ω=1/2) X 2Πg(Ω= 1/2) system.Based on the experimental results of the molecular constants of 35 Cl2+,it calculates the vibrational isotope shifts of the(2,7) and(3,7) band between the isotopic species 35 Cl+2,35 Cl 37 Cl+and 37 Cl2+,and estimates the rotational constants of both A 2 Π u and X 2 Π g states for the minor isotopic species 35 Cl 37 Cl+and 37 Cl2+.The experimental results of the spectrum of 35 Cl 37 Cl+(3,7) band proves the above mentioned theoretical calculation.The molecular constants and thus resultant rovibronic spectrum for 37 Cl2+ were predicted,which will be helpful for further experimental investigation.     

百兆电子伏特/核子原子核诱发乳胶核反应靶核反冲质子多重数涨落分析(英文)

利用标度阶乘矩方法对290 A MeV $^{12}$C-AgBr, 400 A MeV $^{12}$C-AgBr, 400 A MeV $^{20}$Ne-AgBr及500 A MeV $^{56}$Fe-AgBr 作用靶核反冲质子在二维正常相空间及累积变量空间发射过程中的多重数涨落分别进行了分析。实验结果表明:在正常相空间,对于秩数q较小时标度阶乘矩（$ln$）随相空间的分割数的增加而增加,而对于秩数较大时标度阶乘矩（$ln$）随相空间的分割数的增加表现出先增加后趋于饱和或减小的趋势;在累积变量空间,标度阶乘矩（$ln$）随相空间的分割数的增加而减小,这表明对于我们所研究的核作用体系靶核反冲质子发射过程中不存在非统计涨落。Multiplicity fluctuation of the target recoil protons emitted in $290$\,A MeV $^{12}$C-AgBr, $400$\,A MeV $^{12}$C-AgBr, $400$\,A MeV $^{20}$Ne-AgBr and $500$\,A MeV $^{56}$Fe-AgBr interactions are studied using the scaled factorial moment (SFM) method in two-dimensional normal phase space and cumulative variable space, respectively. It is found that in normal phase space the SFM ($\ln$) increases linearly with the increase of the divided number of phase space ($\ln{M}$) for lower q-values and increases linearly and then becomes saturation or decrease with the increase of $\ln{M}$ for higher q-values, and in cumulative variable space $\ln$ decreases linearly with the increase of $\ln{M}$, which indicates that no evidence of non-statistical multiplicity fluctuation is observed in our data sets.     

Laboratory demonstration of geopotential measurement using transportable optical clocks

We report an experimental demonstration of geopotential difference measurement using a pair of transportable $^{40}$Ca$^{+}$ optical clocks (TOC-729-1 and TOC-729-3) in the laboratory, each of them has an uncertainty of $1.3 \times 10^{-17}$ and an instability of $4.8 \times 10^{-15}/\sqrt{ \tau } $. Referenced to a stationary clock of TOC-729-1, the geopotential difference measurements are realized by moving TOC-729-3 to three different locations and the relevant altitude differences are measured with uncertainties at the level of 20 cm. After correcting the systematic shifts (including gravitational red shift), the two-clock frequency difference is measured to be $-0.7(2.2) \times 10^{-17}$, considering both the statistic $(1.0 \times 10^{-17})$ and the systematic $(1.9 \times 10^{-17})$ uncertainties. The frequency difference between these two clocks is within their respective uncertainties, verifying the reliability of transportable $^{40}$Ca$^{+}$ optical clocks at the low level of 10$^{-17}$.     

Theoretical calculation of the quadratic Zeeman shift coefficient of the 3P0o clock state for strontium optical lattice clock

In the weak-magnetic-field approximation, we derived an expression of quadratic Zeeman shift coefficient of $^3P^{\rm o}_0$ clock state for $^{88}$Sr and $^{87}$Sr atoms. By using this formula and the multi-configuration Dirac-Hartree-Fock theory, the quadratic Zeeman shift coefficients were calculated. The calculated values $C_2$ = $-23.38(5)$ MHz/T$^2$ for $^{88}$Sr and the $^3P^{\rm o}_0$, $F = 9/2$, $M_F = \pm9/2$ clock states for $^{87}$Sr agree well with the other available theoretical and experimental values, especially the most accurate measurement recently. In addition, the calculated values of the $^3P^{\rm o}_0$, $F = 9/2$, $M_F = \pm9/2$ clock states were also determined in our $^{87}$Sr optical lattice clock. The consistency with measurements verifies the validation of our calculation model. Our theory is also useful to evaluate the second-order Zeeman shift of the clock transition, for example, the new proposed $^1S_0$, $F = 9/2$, $M_F = \pm5/2$-${}^3P^{\rm o}_0$, $F = 9/2$, $M_F = \pm3/2$ transitions.     

Judd--Ofelt analysis of spectra and experimental evaluation of laser performance of Tm3+ doped Lu2SiO5 crystal

This paper reports that the Tm^3＋：Lu2SiO5 （Tm：LSO） crystal is grown by Czochralski technique. The roomtemperature absorption spectra of Tm：LSO crystal are measured on a b-cut sample with 4 at.% thulium. According to the obtained Judd-Ofelt intensity parameters Ω2=9.3155×10^-20 cm^2, Ω4=8.4103×10^-20 cm^2, Ω6=1.5908×10^-20 cm^2, the fluorescence lifetime is calculated to be 2.03 ms for ^3F4 → ^3H6 transition, and the integrated emission cross section is 5.81×10^-18 cm^2. Room-temperature laser action near 2μm under diode pumping is experimentally evaluated in Tm：LSO. An optical-optical conversion efficiency of 9.1% and a slope efficiency of 16.2% are obtained with continuouswave maximum output power of 0.67 W. The emission wavelengths of Tm：LSO laser are centred around 2.06μm with spectral bandwidth of -13.6 nm.