Preparation of sol-gel method P2O5-Al2O3-SiO2 glasses and their characterization

Nanostructures P₂O₅-Al₂O₃-SiO₂ glasses were prepared by sol-gel method. The glasses were characterized by XRD, FTIR and TG/DTA methods. The average pore size of the glass was less than 3 nm as measured by N₂ adsorption — desorption method. The thermal stability was measured as a function of decomposition temperature and weight loss calculations. Proton conductivities of all samples increased with an increase in relative humidity (40–90 %), indicating that continuous paths suitable for proton conduction were developed when glasses heat treated at 300 °C due to the adsorption of water. The temperature dependence of the conductivity for all compositions increases with increasing temperature in the range 30–90 °C with relative humidity 70 %. The overall conductivity was in the range 10⁻⁴–10⁻³ S/cm for compositions.     

Magnetic-field-induced retardation of the recombination of nonequilibrium charge carriers in semiconductors

The retardation of the recombination of electrons and holes in semiconductors in an applied uniform magnetic field has been predicted. It has been shown that the recombination time in germanium in the temperature range of T = 1–10 K at charge carrier densities of n _e = 10¹⁰−10¹⁴ cm⁻³ in magnetic fields of B = 3 × 10²−3 × 10⁴ G can be more than two orders of magnitude larger than that at zero magnetic field. This means that, after creation of nonequilibrium charge carriers by their injection at the p-n junction owing to some radiation sources or fast electron irradiation, the semiconductor retains its conductivity for a much longer time at nonzero applied magnetic field. The effect under study can be used, for example, to detect radiation sources.     

Giant dielectric relaxation in SrTiO3-SrMg1/3Nb2/3O3 and SrTiO3-SrSc1/2Ta1/2O3 solid solutions

Ceramic samples of (1−x)SrTiO₃-xSrMg_1/3Nb_2/3O₃ and (1−x)SrTiO₃-xSrSc_1/2Ta_1/2O₃ were prepared, and their dielectric properties were studied at x=0.005–0.15 and 0.01–0.1, respectively, at frequencies 10 Hz–1 MHz and at temperatures 4.2–350 K. A giant dielectric relaxation was observed in the temperature range 150–300 K, and not so strong but well-developed relaxation was found in the temperature range 20–90 K. The activation energy U and the relaxation time τ₀ were determined to be 0.21–0.3 eV and from 10⁻¹¹ to 10⁻¹² s for the high-temperature relaxation and 0.01–0.02 eV and 10⁻⁸–10⁻¹⁰ s for the low-temperature relaxation, respectively. The additional local charge compensation of the heterovalent impurities Mg²⁺ and Nb⁵⁺ (or Sc³⁺ and Ta⁵⁺) by free charge carriers or the host ion vacancies is suggested to be the underlying physical mechanism of the relaxation phenomena. On the basis of this mechanism, the Maxwell-Wagner model and the model of reorienting dipole centers Mg²⁺ (or Sc³⁺) associated with the oxygen vacancy are proposed to explain the high-temperature relaxation with some arguments in favor of the latter model. The polaron-like model with the Nb⁵⁺-Ti³⁺ center is suggested as the origin of the low-temperature relaxation. The reasons for the absence of ferroelectric phase transitions in the solid solutions under study are also discussed. From Fizika Tverdogo Tela, Vol. 44, No. 11, 2002, pp. 1948–1957. Original English Text Copyright ? 2002 by Lemanov, Sotnikov, Smirnova, Weihnacht. This article was submitted by the authors in English.     

D.C. conductivity of transparent conductive ZnO:Al films in the temperature range 80–360 K

An experimental study of the temperature dependence of the d.c. conductivity σ as a function of temperature T in the range from 80–360 K on nanocrystalline ZnO:Al films (Al³⁺ 2%) of thickness 500 nm prepared on glass microscope slides by a dip — coating method is presented. The electrical conductivity σ, which at room temperature varied between 0.1 to 2.7 S/cm, increased almost linearly with T for all the samples. Measurements of the Hall coefficient at room temperature and in a magnetic field of 1.2 T, gave R_H=0.53 cm³C⁻¹, from which a carrier concentration of n=1.18×10¹⁹ cm⁻³ and a carrier mobility of μ=1.40 cm²/Vs were deduced. Paper presented at the Patras Conference on Solid State Ionics — Transport Properties, Patras, Greece, Sept. 14–18, 2004.     

Field dependence of spin-lattice relaxation of Nd3+ ions in Y3Al5O12 crystals

Our studies involve measuring spin-lattice relaxation times for Nd³⁺ ions in yttrium-aluminum garnets over the temperature range 4–50 K at 9.25 and 36.4 GHz for different orientations of the external magnetic field in relation to the crystallographic axes. The temperature dependence of the relaxation rate is described by T ₁ ⁻¹ =AT ⁿ+b exp(−Δ/kT), where n varies from sample to sample, with n=1 for “perfect” samples (i.e., with the longest relaxation times). Here Δ is approximately 130 cm⁻¹, which is the energy of the excited Kramers doublet of the neodymium ion closest to the ground state, and this makes it possible to interpret the second term in T ₁ ⁻¹ as the contribution of two-stage relaxation proceeding through the intermediate level Δ. A strong field dependence of these processes has been discovered: when the frequency was increased fourfold, the relaxation rate increased by a factor of 10. The effect is a specific manifestation of the degeneracy of the excited level, breaking of the symmetry of the crystalline field due to lattice defects, and the prevalence of deformations of a certain type in the spin-lattice interaction. Zh. éksp. Teor. Fiz. 111, 332–343 (January 1997)     

Electrical and photoelectrical studies of plasma polymerized acrylonitrile

The electrical and photoelectrical properties of plasma polymerized acrylonitrile (PAN) are reported. The polymer films were studied in silver-PAN-silver systems. Electrical conductivity at room temperature was of the order of 10⁻¹¹ ohm⁻¹ cm⁻¹. The space charge limited current (SCLC) studies at room temperature and thermally stimulated current studies (TSC) over a temperature range of 290–500°K led to a clear understanding of carrier concentration, carrier mobility, trapping levels and activation energies. Photoelectric measurements were used to draw a band picture in plasma depositedPAN.     

Structural and electrical characterisation of strontium zirconate proton conductor co-sputter deposited coatings

SrZr_1−x Y _x O₃ coatings were co-sputtered from metallic Zr–Y (84–16 at.%) and Sr targets in the presence of a reactive argon–oxygen gas mixture. The structural and chemical features of the film have been assessed by X-ray diffraction and scanning electron microscopy. The electrical properties have been investigated for different substrates by Complex Impedance Spectroscopy as a function of crystalline state, temperature and atmosphere. The as-deposited coatings are amorphous and crystallise after annealing at 673 K for 2 h under air. The stabilisation of the perovskite structure is a function of the nominal composition. The films are dense and present a good adhesion on different substrates. Crystallisation and mechanical stresses are detected by alternating current (AC) impedance spectroscopy. Significant ionic conductivity in the 473–823 K temperature range is evidenced in air. Two different conduction regimes in the presence of steam are attributed to a modification of the charge carrier nature. In spite of low conductivity values (σ ~10⁻⁶ S.cm⁻¹ at 881 K), the activation energies are in agreement with that of Y-doped strontium zirconate ceramics (~0.7 eV in air).     

Electrical transport properties of CuWO4

The temperature dependence of the electrical conductivity, thermoelectric power and dielectric constant of the antiferromagnetic CuWO₄ have been studied in the temperature range 300–1000 K. The conductivity results can be summarised by the equations σ_I=6.31 × 10⁻³ exp (−0.29 eV/kT) ohm⁻¹ cm⁻¹ in the temperature range 300–600 K and σ_II=3.16 × 10⁵ exp (−1.48 eV/kT) ohm⁻¹ cm⁻¹ between 600 K and 1000 K. The thermoelectric power can be expressed byθ=[− 1.25 (10³/T) + 3.9] mV/K. Initially dielectric constant increases slowly but for high temperatures its increase is fast.     

Ionic switching in mehanochemically synthesized Ag2S-Sb2S3 amorphous superionic conductor

Highly ionically conducting amorphous samples of Ag₂S·xSb₂S₃ (x=0.15−0.40) are mechanochemically synthesized and characterized by X-ray diffraction (XRD), DTA/DSC, electrical and electrochemical methods. The electrical conductivity measurements are carried out as a function of frequency (5 Hz – 13 MHz) and temperature (300 – 380 K). While the ac conductivity of x=0.40 composition obeys the well-known power law σ (ω)=σ (0) + A ωⁿ over the whole frequency range, the x=0.30 sample obeys the above relation only at lower temperatures. The compositions x=0.20 and 0.15 do not follow the famous dispersion relation at higher (MHz) frequencies. The conductivity isotherms of these a-SICs do not superimpose upon application of Summerfield scaling. The scaling behaviour and the variation of ac conductivity with frequency for x=0.20 and 0.15 are explained in terms of switching from the predominantly ionic (at lower frequencies) to the predominantly electronic conduction (at higher frequencies). Paper presented at the 2nd International Conference on Ionic Devices, Anna University, Channai, India, Nov. 28–30, 2003.     

Electrical properties of heavily doped fluorite-structured BaF2:RF3 (R=La, Pr, Nd, Gd, Tb, Y, Sc) single crystals

The superionic conductivity and dielectric response of heavily doped fluorite-structured Ba_1−xR_xF_2+x (R=La, Pr, Nd, Gd, Tb, Y, Sc; x=0.005–0.45) crystals are reported. The highest ionic conductivity is found for R=Sc and x=0.1. Upon ScF₃ doping, small Sc³⁺ ions rearrange their surroundings, create excessive fluoride interstitial ions and bring about a high ionic conductivity. For each dopant, the concentration dependence of the ionic conductivity is non-linear. A monotonous concentration dependence of the ionic conductivity is found only for La³⁺ doping. Upon doping with Nd³⁺, Gd³⁺, Tb³⁺, Y³⁺ and Sc³⁺ ions, a conductivity maximum is observed at x=0.1–0.2. Upon Pr³⁺ doping, this maximum is split. The influence of defect clustering on the concentration dependence of the conductivity is discussed. Paper presented at the 6th Euroconference on Solid State Ionics, Cetraro, Calabria, Italy, Sept. 12–19, 1999.     

Ion transport in the anion-deficient nonstoichiometric phases La0.95(Ba1−x Srx)0.05F2.95 (0⩽x⩽1)

The fluoride-ion conductivity of the nonstoichiometric tysonite phases La_0.95(Ba_1−x Sr_x)_0.05Fe_2.95 (0⩽x⩽1) is investigated by impedance spectroscopy. Electrophysical measurements are performed in the frequency range 5–5×10⁵ Hz and temperature range 300–700 K. A discontinuity is observed in the temperature dependence of the conductivity at T _c=410–430 K. The behavior of the temperature dependence of the electrical conductivity is explained within a transport model taking into account the migration of fluoride ions between different inequivalent structural sites. The maximum value of the conductivity at room temperature (293 K) is 2×10⁻⁴ Ω⁻¹ cm⁻¹ for the solid solution La_0.95Sr_0.05F_2.95. The fluorine-ion conductivity in La_0.95(Ba_1−x Sr_x)_0.05F_2.95 single crystals is almost an order of magnitude larger than the value for the commercial solid electrolyte La_0.992Eu_0.008F_2.992 (a fluorine-selective membrane) having a tysonite structure. Fiz. Tverd. Tela (St. Petersburg) 40, 658–661 (April 1998)     

Anisotropy of amorphous nanogranular composites CoNbTa-SiO<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript> and CoFeB-SiO<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript>

A comparative investigation of the magnetic properties of amorphous nanogranular composites (Co₄₁Fe₃₉B₂₀) _x (SiO _n )_{100 − x} and (Co₈₆Nb₁₂Ta₂) _x (SiO _n )_{100 − x} has been performed in the subpercolation region at temperatures in the range 4.2–300 K. The thermomagnetic dependences in the range 4.2–300 K and the processes of magnetization reversal and remanent magnetization relaxation at liquid-helium temperatures have been studied. It has been established that the average anisotropy constants of amorphous nanograins are equal to 3.6–7.0 kJ/m³ for the (Co₄₁Fe₃₉B₂₀) _x (SiO _n )_{100 − x} composites and 5–8 kJ/m³ for the (Co₈₆Nb₁₂Ta₂) _x (SiO _n )_{100 − x} composites. The fundamental differences in the concentration dependences of the anisotropy constant K _eff and the coercive force H _C have been revealed for the two systems under investigation. It has been demonstrated that, as the concentration of the metal phase increases, the quantities K _eff and H _C increase for the (Co₈₆Nb₁₂Ta₂) _x (SiO _n )_{100 − x} composites and decrease for the (Co₄₁Fe₃₉B₂₀) _x (SiO _n )_{100 − x} composites.     

Kinetic phenomena in zero-gap semiconductors CuFeS<Subscript>2</Subscript> and CuFeTe<Subscript>2</Subscript>: Effect of pressure and heat treatment

Electrical resistivity ρ and Hal coefficient R are measured as a function of the temperature (T = 1.7−310 K) and the magnetic field (up to H = 28 kOe) in zero-gap semiconductor CuFeS₂ samples subjected to hydrostatic compression and under various heat-treatment conditions. At low temperatures, anomalies are observed in the kinetic effects related to the presence of ferromagnetic clusters: the magnetoresistance at T = 4.2 K and T = 20.4 K acquires a hysteretic character and thermopower α changes its sign at T < 15 K. The temperature dependence of conduction-electron concentration n in CuFeS₂ has a power form in the temperature range T = 14−300 K, which is characteristic of the intrinsic conductivity in zero-gap semiconductors. In CuFeS₂, we have n(T) ∝ T ^1.2; in isoelectron compound Cu_1.13Fe_1.22Te₂, we have n(T) ∝ T ^1.93. Heat treatment is found to affect the intrinsic conductivity of CuFeS₂, as the action of hydrostatic compression (carrier concentration changes); that is, the carrier concentration changes. However, a power form of the n(T) and ρ(T) dependences is retained.     

Free carrier concentration and conductivity in chlorine doped lead telluride

Plasma resonance in the IR reflection spectra is used to measure the concentration and relaxation time of free charge carriers along with the conductivity in PbTe_{1 − x} Cl _x solid solutions. It is found that with increasing the chlorine concentration, the electron concentration and conductivity increase and reach saturation at x = 0.03 (n = 5.5 × 10¹⁹ cm⁻³, σ = 3750 Ohm⁻¹ · cm⁻¹). The relaxation time decreases with increasing the chlorine concentration and reaches the minimum value of 2.2 × 10⁻¹⁴ s at x = 0.03; then, it almost does not change.     

Trap characterization for Bi4Ti3O12 thin films by thermally stimulated currents

Thermally stimulated current (TSC) measurements performed in the 100 K–400 K temperature range on Bi₄Ti₃O₁₂ (BiT) thin films annealed at 550 °C and 700 °C had revealed two trapping levels having activation energies of 0.55 eV and 0.6 eV. The total trap concentration was estimated at 10¹⁵ cm⁻³ for the samples annealed at 550 °C and 3×10¹⁵ cm⁻³ for a 700 °C annealing and the trap capture cross-section was estimated about 10⁻¹⁸ cm². From the temperature dependence of the dark current in the temperature range 20 °C–120 °C the conduction mechanism activation energy was found to be about 0.956–0.978 eV. The electrical conductivity depends not only on the sample annealing temperature but also whether the measurement is performed in vacuum or air. The results on the dark conductivity are discussed considering the influence of oxygen atoms and oxygen vacancies. Received: 28 January 1998 / Accepted: 8 January 1999 / Published online: 5 May 1999     

Carrier mobility in nonstoichiometric n-Bi2Te3−x Sex solid solutions

A study has been made of the thermoelectric and galvanomagnetic properties of n-Bi₂Te_3−x Se_x solid solutions (x=0.3 and 0.36) in the temperature range 80–300 K. The lowest carrier concentrations, (0.8–1)×10¹⁸ cm⁻³, were obtained by displacing the solid solution from the stoichiometric to a Te-rich composition. At such carrier concentrations, the second subband in the conduction band of n-Bi₂Te_3−x Se_x is not filled, which results in a growth of mobility because of the absence of interband scattering, and brings about an increase of thermoelectric efficiency in the 80–120-K range. Fiz. Tverd. Tela (St. Petersburg) 39, 483–487 (March 1997)     

Dielectric relaxation and dc conductivity on the PVOH-CF3COONH4 polymer system

In the present paper, the ionic conductivity and the dielectric relaxation properties on the poly(vinyl alcohol)-CF₃COONH₄ polymer system have been investigated by means of impedance spectroscopy measurements over wide ranges of frequencies and temperatures. The electrolyte samples were prepared by solution casting technique. The temperature dependence of the sample’s conductivity was modeled by Arrhenius and Vogel-Tammann-Fulcher (VTF) equations. The highest conductivity of the electrolyte of 3.41×10^− 3 (Ωcm)^− 1 was obtained at 423 K. For these polymer system two relaxation processes are revealed in the frequency range and temperature interval of the measurements. One is the glass transition relaxation (α-relaxation) of the amorphous region at about 353 K and the other is the relaxation associated with the crystalline region at about 423 K. Dielectric relaxation has been studied using the complex electric modulus formalism. It has been observed that the conductivity relaxation in this polymer system is highly non-exponential. From the electric modulus formalism, it is concluded that the electrical relaxation mechanism is independent of temperature for the two relaxation processes, but is dependent on composition.     

Solid polymeric electrolyte of PVC–ENR–LiClO<Subscript>4</Subscript>

The ionic conductivity of PVC–ENR–LiClO₄ (PVC, polyvinyl chloride; ENR, epoxidized natural rubber) as a function of LiClO₄ concentration, ENR concentration, temperature, and radiation dose of electron beam cross-linking has been studied. The electrolyte samples were prepared by solution casting technique. Their ionic conductivities were measured using the impedance spectroscopy technique. It was observed that the relationship between the concentration of salt, as well as temperature, and conductivity were linear. The electrolyte conductivity increases with ENR concentration. This relationship was discussed using the number of charge carrier theory. The conductivity–temperature behaviour of the electrolyte is Arrhenian. The conductivity also varies with the radiation dose of the electron beam cross-linking. The highest room temperature conductivity of the electrolyte of 8.5 × 10⁻⁷ S/cm was obtained at 30% by weight of LiClO₄. The activation energy, E _a and pre-exponential factor, σ _o, are 1.4 × 10⁻² eV and 1.5 × 10⁻¹¹ S/cm, respectively.     

AC Conductivity,XRD and transport properties of melt quenched PbI<Subscript>2</Subscript>–Ag<Subscript>2</Subscript>O–Cr<Subscript>2</Subscript>O<Subscript>3</Subscript> system

Composite materials used for electrode and electrolyte materials have been intensely studied in view of their advantages such as higher conductivity and better operational performance compared to their single-phase counterparts. The present work aims at studying the electrical and structural characteristics of a new composite electrolyte namely, (PbI₂) _x  − (Ag₂O–Cr₂O₃)_100−x where x = 5, 10, 15, 20, and 25 mol%, respectively, prepared by the melt quenching technique. The room temperature X-ray diffraction spectra revealed certain crystalline phases in the samples. AC conductivity analysis for all the prepared samples was carried out over the frequency range 1 MHz–20 Hz and in the temperature window 297–468 K. The room temperature conductivity values were calculated to be in the order of 10⁻⁵–10⁻³ Scm⁻¹. An Arrhenius dependence of temperature with conductivity was observed, and the activation energies calculated were found to be in the range 0.27–0.31 eV. Furthermore, the total ionic transport number (t _i) values obtained for all these indicated the ionic nature of this system. Paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamilnadu, India, Dec. 7–9, 2006.     

Thermal conductivity and thermal diffusivity of SiO<Subscript>2</Subscript> nanopowder

A 3ω approach for the simultaneous determination of the effective thermal conductivity and thermal diffusivity of nanopowder materials was developed. A 3ω experimental system was established, and the thermal properties of water and alcohol were measured to validate and estimate the accuracy of the current experimental system. The effective thermal conductivity and thermal diffusivity of the SiO₂ nanopowder with 375, 475, and 575 nm diameters were measured at 290–490 K and at different densities. At room temperature, the effective thermal conductivity and thermal diffusivity of the SiO₂ nanopowder increased with temperature; however, both values decreased as the particle diameter was reduced. An optimum SiO₂ powder density that decreased with decreasing diameter was also observed within the measurement range. The minimum effective thermal conductivity and maximum effective thermal diffusivity were obtained at 85 × 10⁻³ kg/L, when the particle diameter was 575 nm. The optimum densities of the particles with 375 and 475 nm diameters were less than 50.23 × 10⁻³ and 64.82 × 10⁻³ kg/L, respectively.