共查询到17条相似文献,搜索用时 296 毫秒
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测量了MgB-2的热电势和电阻率与温度的依赖关系.在100K—300K区间,热电势呈近似线性温度依赖关系,其斜率为正,表明载流子为空穴型且与能带贡献的图像相一致.与此对应,在此温区电阻率呈T2依赖关系.在100K以下,热电势和电阻率各自转变了其高温区的温度依赖关系.热电势在超导转变温度Te(零电阻36.6K)到100K间有一宽峰,具有声子曳引峰的特征,表明电子-声子相互作用很强.估算了一些重要的参数,如带米能EF、能带宽度等. 相似文献
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测量了Sm2-xCexCuO4(000≤x≤021)多晶样品的热电势S和电阻率ρ的温度依赖关系.在缘绝体—金属转变边界处,观测到热电势从绝缘体区明显的弱温度依赖关系到金属区线性温度依赖关系的转变.当Ce的含量由009增加到021时,高温下S的斜率发生由负到正的转变,这是能带的填充能级发生改变时电子型和空穴型载流子的贡献发生竞争的表现,由电子型向空穴型的过渡发生在x=017处.S和ρ在200K以下的斜率变化是载流子局域化造成的.x=006—021的样品在50K处观察到一个正的曳引峰.室温下的热电势S300K和S0(高温区热电势线性外推到0K的值)与Ce含量在绝缘体、欠掺杂和过掺杂区域有不同的依赖关系.过掺杂区域很小的S300K和S0意味着一个宽带的费米液体的贡献,同时ρ满足T2关系,二者相一致.关键词:电子型超导体输运性质热电势 相似文献
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测量了零电阻温度为114K 的 TlBaCaCuO 超导体的热电势率,结果表明,在150K 以上热电势率与温度的关系可用 S=AT+B/T 表示,说明在这类高温超导体中声子曳引热电势即使在高温区也不能忽略,存在电-声子相互作用. 相似文献
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测量了新型超导体MgCNi3(Tc=8K)的电阻率、正常态Hall效应和热电势等输运性质.电阻率温度曲线表明,在高于70K的温区可以用电声子散射的BlochGr櫣neisen公式拟合.Hall系数RH和热电势S在Tc以上的整个温度范围都为负值,强烈表明MgCNi3的载流子类型为电子型.RH在从Tc到140K的温区内基本不随温度变化,但在140K到室温范围,RH随温度升高其绝对值减小,对RH的这种温度依赖关系进行了讨论.S在150K以上近似与温度成线性关系,而在150K以下显示非线性,用电声子相互作用的重整关键词:电阻率热电势Hall效应 相似文献
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测量了Sm2-xCexCuO4(0.00≤x≤0.21)多晶样品的热电势S和电阻率ρ的温度依赖关系.在缘绝体-金属转变边界处,观测到热电势从绝缘体区明显的弱温度依赖关系到金属区线性温度依赖关系的转变.当Ce的含量由0.09增加到0.21时,高温下S的斜率发生由负到正的转变,这是能带的填充能级发生改变时电子型和空穴型载流子的贡献发生竞争的表现,由电子型向空穴型的过渡发生在x=0.17处.S和ρ在200K以下的斜率变化是载流子局域化造成的.x=0.06-0.21的样品在50K处观察到一个正的曳引峰.室温下的热电势S300K和S0(高温区热电势线性外推到0K的值)与Ce含量在绝缘体、欠掺杂和过掺杂区域有不同的依赖关系.过掺杂区域很小的S300K和S0意味着一个宽带的费米液体的贡献,同时ρ满足T2关系,二者相一致. 相似文献
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La2-xSrxCuO4单晶膜的热电势与电阻率 总被引:1,自引:0,他引:1
测量了高质量的单晶膜La2-xSrxCuO4(x=010,020,025)的电阻率和热电势.La19Sr01CuO4电阻率呈现S型行为,表明存在一个赝能隙,在赝能隙态可以用公式ρ=ρ0+βexp(-ΔT)很好地拟合.热电势的测量表明,在超导转变前样品的残余热电势值非常小,这是膜的高质量引起的,三个样品在200K以上都出现一个宽峰,对其进行了一些理论模型分析,并与电子型超导体热电势结果作了比较.关键词:薄膜输运性质热电势 相似文献
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R. Srinivasan V. Sankaranarayanan C. K. Subramaniam Prakash Fortunata Rajam S. Kasiviswanathan Vijayashree Radhakrishnan 《Phase Transitions》2013,86(1-3):87-95
Abstract Resistance and thermopower measurements have been made on a series of compounds, YBa2Cu3- x Zn x O7-y, with x = 0.025, 0.05, 0.1, 0.15 and 0.2. The superconducting transition temperature decreases as the zinc concentration increases. In a range of temperatures below TM , the mid point of the transition, the resistance shows an exponential temperature dependence fitting the phenomenological formula proposed by Ausloos et al. From the plot of logarithm of resistivity vs. (TM ? T) 1/2/T, one deduces a value of the average dimension of the Josephson junction to be a few tens of Å, suggesting the microtwin boundaries to be the location of the junctions. The thermopower shows a peak always just above Tc . This conclusively shows that phonon drag is not the cause of the peak. The temperature dependence of the thermopower appears to resemble closely the earlier observations of Srinivasan et al. on yttrium barium copper oxide. Single-particle tunneling measurements carried out for two concentrations, x = 0 and 0.05, appear to indicate that the energy gap parameter scales with Tc , and 2Δ/kTc has an approximate value of 5.5. 相似文献
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Study on the in—plane electrical resistivity and thermoelectric power in single crystals of La2—xBaxCuO4
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The in-plane electrical resistivity and thermoelectric power have been measured on single crystals of La2-xBaxCuO4 at around x=0.125. The room temperature resistivity and thermopower have their maximum values at x=0.125, indicating that the carrier concentration is the minimum and the carriers are most strongly localized at x=0.125. The observed semiconductor-like behaviour can be well described by the weak-localized quasi-two-dimensional state. The steep rise in electric resistivity of the sample at x=0.125 below 70K is attributed to the formation of static stripe-order of holes and spins, which are pinned by the low-temperature tetragonal (LTT) structure, as discovered in La1.48Nd0.4Sr0.12CuO4. The temperature dependence of electric resistivity below 70K is still well described by the formula ρ∝ lnT. A definite change in the slope of thermopower is observed at the low-temperature orthorhombic-LTT structural phase transition temperature. The origin of the 1/8 anomaly is discussed in the text. 相似文献
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测量了在O2中退火不同时间的Sm1.85Ce0.15CuO4单晶样品的热电势S与电阻率ρ的温度依赖关系.所有的样品电阻率高温下呈现线性温度依赖行为.未退火的样品在148K发生超导转变,而退火后的样品在低温下发生金属半导体相变,其超导电性消失,表明退火引起了载流子浓度下降,体系进入欠掺杂态.随着温度降低,所有的样品ST和ρT曲线在200K附近(T)都发生斜率的改变,可以用赝能隙现象解释.热电势S在低温下出现一个正的曳引峰,意味着载流子符号发生改变,由电子型转变为空穴型关键词:电子型超导体热电势赝能隙 相似文献
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G. Venkataiah 《Phase Transitions》2013,86(2):156-166
Thermoelectric power (TEP) studies of La0.67Sr0.33MnO3 polycrystalline manganite material system having varying particle size have been undertaken. These materials were prepared by citrate based sol–gel route by sintering at four different temperatures and were later characterized by X-ray diffraction (XRD), scanning electron microscopy, electrical resistivity, AC susceptibility, etc., studies. The XRD data were analyzed by Rietveld refinement technique. Thermopower versus temperature plots are found to exhibit two peaks and an effort has been made to explain the significance of both of them. Finally, with a view to understand the conduction mechanism in these materials, TEP data in the low-temperature ferromagnetic metallic (T < T P) regime were analyzed using electron–magnon scattering phenomenon, while that in the high-temperature insulating (T > T P) region were analyzed by small polaron hopping model. 相似文献
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通过原子力显微镜(AFM)对Nd_(1.85)Ce_(0.15)CuO_(4±δ)(NCCO)单晶样品的微结构进行分析,发现样品在制备和热处理过程中存在分解反应Nd2-xCexCuO4→(Nd,Ce)2O3 NdCeO3.5 Cu2O发生的证据,控制样品冷却速率可得到(Nd,Ce)2O3分解物含量不同的单晶样品.ab面电阻率测量结果表明,降低冷却速率可有效减少分解过程的发生、减少有效载流子浓度的降低和减少对Cu2O上Cu2 -Cu2 反铁磁关联的破坏,有利于保持体系结构上的均匀性和稳定性,是制备高品质电子型超导体Nd2-xCexCuO4单晶的关键. 相似文献
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从二维系统的Kosterlitz-Thouless (KT) 相变理论出发,在关联长度中引入热激活能和平均钉扎高度,提出了修正的KT相变模型.该模型与库伦气体标度理论和Halperin-Nelson关系具有一致性.应用修正的KT相变模型研究磁场下Tl2Ba2CaCu2Ox(Tl-2212)薄膜电阻转变的标度行为,发现由电阻转变计算得到的平均钉扎高度与温度具有线性依赖关系,实验结果支持修正的KT相变模型.关键词:标度行为各向异性超导体电阻转变 相似文献