Preparation and Characterization of Molybdenum Oxide Thin Films by Sol-Gel Process

This paper presents a new sol-gel process to prepare molybdenum oxide thin films. A molybdenum acetylacetonate sol was prepared by employing the system CH₃COCH₂COCH₃/MoO₃/C₆H₅CH₃/HOCH₂CH₂OCH₃. A molybdenum acetylacetonate gel was prepared by addition of aqueous NH₃. Thermal gravimetry (TG) and differential thermal analyses (DTA) of the gel suggested that crystallization of MoO₃ occurs in a 140 K temperature range around 508°C. MoO₃ films were prepared on fused silica, Si (111) and Al₂O₃ (012) substrates by annealing spin coating films of the sol in oxygen environment at 508°C. X-ray diffraction (XRD) showed that all films crystallize in -MoO₃ structure, and crystallites on fused silica substrate are arbitrarily oriented while those on Si (111) and Al₂O₃(012) substrates oriented in the (010) direction. SEM investigations showed that MoO₃ grains of all films are randomly distributed, with a longitudinal dimension of about 1–5 m and the film thickness is about 1 m.     

Growth of the Bismuth Titanate Films on Textured Oxide Electrode by the Spin Coating-Pyrolysis

Bismuth titanate films were fabricated onto highly oriented LaNiO₃ electrode grown on SrTiO₃(100) and LaAlO₃(012) substrates using spin-coating technique with metal naphthenates as starting materials. (00l)/(h00)-oriented bismuth titanate films on LaNiO₃/SrTiO₃ and LaNiO₃/LaAlO₃ were obtained by pyrolysis at 500°C, followed by annealing at 750°C. In-plane alignment and surface morphology of the films analyzed by pole-figure analysis ( scanning) and field emission scanning electron microscope showed an imperfect epitaxy with polycrystalline structure.An erratum to this article can be found at     

Chemical Solution Deposition of Epitaxial Metal‐Oxide Nanocomposite Thin Films

Epitaixial metal‐oxide nanocomposite films, which possess interesting multifunctionality, have found applications in a wide range of devices. However, such films are typically produced by using high‐vacuum equipment, like pulse‐laser deposition, molecular‐beam epitaxy, and chemical vapor deposition. As an alternative approach, chemical solution methods are not only cost‐effective but also offer several advantages, including large surface coating, good control over stoichiometry, and the possible use of dopants. Therefore, in this Personal Account, we review the chemistry behind several of the main solution‐based approaches, that is, sol‐gel techniques, metal‐organic decomposition, chelation, polymer‐assisted deposition, and hydrothermal methods, including the seminal works that have been reported so far, to demonstrate the advantages and disadvantages of these different routes.     

The Role of Oxidative Debris on Graphene Oxide Films

We study the effect of oxidative impurities on the properties of graphene oxide and on the graphene oxide Langmuir–Blodgett films (LB). The starting material was grupo Antolín nanofibers (GANF) and the oxidation process was a modified Hummers method to obtain highly oxidized graphene oxide. The purification procedure reported in this work eliminated oxidative impurities decreasing the thickness of the nanoplatelets. The purified material thus obtained presents an oxidation degree similar to that achieved by chemical reduction of the graphite oxide. The purified and non‐purified graphene oxides were deposited onto silicon by means of a Langmuir–Blodgett (LB) methodology. The morphology of the LB films was analyzed by field emission scanning microscopy (FE‐SEM) and micro‐Raman spectroscopy. Our results show that the LB films built by transferring Langmuir monolayers at the liquid‐expanded state of the purified material are constituted by close‐packed and non‐overlapped nanoplatelets. The isotherms of the Langmuir monolayer precursor of the LB films were interpreted according to the Volmer’s model.     

氧化铑电致变色薄膜的制备、结构及性能

采用溶胶_凝胶方法在ITO导电基底上制备氧化铑电致变色薄膜 .当在碱性溶液中对薄膜分别施加阴极和阳极电位时 ,薄膜即呈现由亮黄到深绿的可逆变化 .采用原位XRD、TG_DTA、IR、XPS等方法对薄膜的结晶态、热处理过程以及膜的化学组成进行分析 .应用交流阻抗法计算了薄膜变色过程的扩散系数 ,结果表明该膜基本可以用于变色器件     

The Effect of Growth Parameters on Electrophysical and Memristive Properties of Vanadium Oxide Thin Films

We have experimentally studied the influence of pulsed laser deposition parameters on the morphological and electrophysical parameters of vanadium oxide films. It is shown that an increase in the number of laser pulses from 10,000 to 60,000 and an oxygen pressure from 3 × 10⁻⁴ Torr to 3 × 10⁻² Torr makes it possible to form vanadium oxide films with a thickness from 22.3 ± 4.4 nm to 131.7 ± 14.4 nm, a surface roughness from 7.8 ± 1.1 nm to 37.1 ± 11.2 nm, electron concentration from (0.32 ± 0.07) × 10¹⁷ cm⁻³ to (42.64 ± 4.46) × 10¹⁷ cm⁻³, electron mobility from 0.25 ± 0.03 cm²/(V·s) to 7.12 ± 1.32 cm²/(V·s), and resistivity from 6.32 ± 2.21 Ω·cm to 723.74 ± 89.21 Ω·cm. The regimes at which vanadium oxide films with a thickness of 22.3 ± 4.4 nm, a roughness of 7.8 ± 1.1 nm, and a resistivity of 6.32 ± 2.21 Ω·cm are obtained for their potential use in the fabrication of ReRAM neuromorphic systems. It is shown that a 22.3 ± 4.4 nm thick vanadium oxide film has the bipolar effect of resistive switching. The resistance in the high state was (89.42 ± 32.37) × 10⁶ Ω, the resistance in the low state was equal to (6.34 ± 2.34) × 10³ Ω, and the ratio R_HRS/R_LRS was about 14,104. The results can be used in the manufacture of a new generation of micro- and nanoelectronics elements to create ReRAM of neuromorphic systems based on vanadium oxide thin films.     

还原石墨/氧化锌复合薄膜的制备及其光电转换性能

本工作研究不同过程还原的氧化石墨rGO/ZnO(reduced graphite oxide/ZnO)复合膜的可见光激发光电转换性能。氧化石墨(GO)经KOH还原处理或NaBH₄还原处理后, 和氧化锌溶胶混合, 通过旋涂法和热处理在F掺杂SnO₂薄膜导电玻璃(FTO)衬底上形成复合薄膜。采用XRD、FTIR、FE-SEM、XPS、UV-Vis等方法对复合薄膜的晶相结构、微观形貌等进行表征, 并测试了复合薄膜在可见光照射下的光电转换性能。GO的预处理过程对复合薄膜的结构影响显著, 采用NaBH₄对GO处理更有利于形成均匀薄膜。光电流测试结果表明不同复合薄膜均能实现可见光照射下产生光电流, 其原理为rGO的光激发电子跃迁到ZnO, 而空穴在rGO中迁移, 在rGO与ZnO界面实现光生载流子分离。其中NaBH₄处理后的rGO/ZnO复合薄膜光电流密度最大, 达6×10^-7 A·cm^-2。     

还原石墨/氧化锌复合薄膜的制备及其光电转换性能

本工作研究不同过程还原的氧化石墨rGO/ZnO(reduced graphiteoxide/ZnO)复合膜的可见光激发光电转换性能。氧化石墨(GO)经KOH还原处理或NaBH4还原处理后,和氧化锌溶胶混合,通过旋涂法和热处理在F掺杂SnO2薄膜导电玻璃(FTO)衬底上形成复合薄膜。采用XRD、FTIR、FE-SEM、XPS、UV-Vis等方法对复合薄膜的晶相结构、微观形貌等进行表征,并测试了复合薄膜在可见光照射下的光电转换性能。GO的预处理过程对复合薄膜的结构影响显著,采用NaBH4对GO处理更有利于形成均匀薄膜。光电流测试结果表明不同复合薄膜均能实现可见光照射下产生光电流,其原理为rGO的光激发电子跃迁到ZnO,而空穴在rGO中迁移,在rGO与ZnO界面实现光生载流子分离。其中NaBH4处理后的rGO/ZnO复合薄膜光电流密度最大,达6×10-7A·cm-2。     

溅射功率对氧化锡薄膜结构和电化学性能的影响

应用射频磁控溅射技术在硅基底上制备氧化锡薄膜,着重研究溅射功率对薄膜结构和电化学性能的影响.XRD,SEM分析及恒电流充放电测试表明,随着溅射功率的增大,薄膜的结晶程度提高;生长速率和晶粒尺寸增大;电池的贮锂容量减少,且首圈不可逆容量损失增大.溅射功率对薄膜的电化学性能有较大的影响.     

Elaboration of ZnO Thin Films with Preferential Orientation by a Soft Chemistry Route

Microcrystalline ZnO films presenting well-defined and tunable orientation were obtained by spin coating of alcoholic sols by two different approaches, based on controlled hydrolysis-condensation of Zn-ethanolamine complexes. As-deposited films are formed by amorphous zinc oxide-acetate submicronic particles, which are transformed into oriented ZnO after thermal treatment. The orientation of ZnO depends on the synthesis method, and the solvent. While in ethanol and [Zn] = 0.05 mol·L^–1, films consist of rectangular platelets oriented with the (100) planes parallel to the substrate (a//n), the orientation of the particles changes to (c//n) for systems in 2-methoxyethanol (2-ME) and [Zn] = 0.75 mol·L^–1. A study of chemical factors that influence the orientation (precursor, solvent, MEA/Zn ratio, concentration, coating parameters, heat treatment) is presented.     

血红蛋白在纳米孔径氧化铝膜修饰电极上的直接电化学

运用电化学包埋法成功将血红蛋白(Hb)固定于纳米孔阳极氧化铝膜(AAO)修饰的玻碳电极(GC)表面, 制得Hb/PPy/AAO/GC修饰电极, 并对Hb/PPy/AAO/GC修饰电极的制备条件进行了优化. 研究了Hb/PPy/AAO/GC修饰电极在磷酸缓冲液(pH＝6.8)中的电化学行为, 探讨了血红蛋白在AAO修饰电极表面的直接电子转移机理. 结果表明阳极氧化铝膜不仅保持了血红蛋白的生物活性, 而且通过它的纳米尺寸效应, 实现了Hb与电极之间的直接电子转移. 其研究内容对生命科学和临床医学有着重要意义.     

Influence of Elaboration Parameters on the Properties of Tin Oxide Films Obtained by the Sol-Gel Process

The influence of elaboration parameters during the sol-gel process is studied for tin oxide films deposition. The Dip Coating Sol-Gel route can be divided into three elaboration stages: the pulling phase and the drying and densification steps. During the pulling phase, the relative humidity ratio and the withdrawal speed are found to influence the film morphology and the film thickness respectively. Then, we show how a correct control of the sample drying is able to eliminate cracks. The densification step (temperature and duration), leading to the final network, is considered in details, and resulting effects on physical properties are presented: crytallinity, optical behaviour, atomic density, stoichiometry, electrical conductivity etc... We show through these results the specificity of the tin oxide elaborated with our procedure     

Carbon Monoxide Oxidation on Metal‐Supported Monolayer Oxide Films: Establishing Which Interface is Active

Ultrathin (monolayer) films of transition metal oxides grown on metal substrates have recently received considerable attention as promising catalytic materials, in particular for low‐temperature CO oxidation. The reaction rate on such systems often increases when the film only partially covers the support, and the effect is commonly attributed to the formation of active sites at the metal/oxide boundary. By studying the structure and reactivity of FeO(111) films on Pt(111), it is shown that, independent of the film coverage, CO oxidation takes place at the interface between reduced and oxidized phases in the oxide film formed under reaction conditions. The promotional role of a metal support is to ease formation of the reduced phase by reaction between CO adsorbed on metal and oxygen at the oxide island edge.     

Co-W合金镀层表面氧化膜在碱性体系中的电化学研究

采用电化学手段以及Mott-Schottky理论, 并结合氧化膜点缺陷模型(PDM)分析研究了Co-W合金镀层在1 mol• L^－1 NaOH溶液中表面氧化膜的半导体性质, 并分别计算出了不同W含量的Co-W合金镀层在－0.15, －0.25和－0.35 V三个不同电位下阳极氧化后氧化膜的供体密度、平带电位及氧空穴扩散系数. 结果表明, Co-W合金镀层在1 mol•L^－1 NaOH溶液中表面氧化膜的Mott-Schottky曲线线性区斜率为正, 表现出N型半导体性质|随着阳极氧化电位的升高或合金镀层W含量的降低, 氧化膜供体密度N_D逐渐增大, 导致氧化膜被破坏或发生点蚀的几率升高|随着阳极氧化电位的降低或合金镀层W含量的降低, 氧化膜平带电位呈降低趋势, 说明其耐蚀性升高|不同W含量的Co-W合金镀层在三个不同电位下阳极氧化后的氧化膜的氧空穴扩散系数为(1.543～8.533)×10^－14 cm²•s^－1.     

Electrochemical and Structural Characterisation of Dip-Coated Fe/Ti Oxide Films Prepared by the Sol-Gel Route

Thin solid films of mixed Fe/Ti oxide composition (Fe/Ti molar ratios: 0.5∶1, 1∶1, 1.5∶1) have been made from Fe(NO₃)₃ alcoholic solution to which Ti(OiPr)₄ was added. Films have been deposited by the dip-coating technique and heat-treated at 300°C and 500°C. Powders of Fe/Ti oxide heat-treated at 300°C are amorphous, while powders annealed at 500°C for 40 hours transformed to mixed rutile, pseudobrookite and hematite phases. The structure of the XRD amorphous films was identified with the help of near-normal reflection absorption (6°) (IRRA) and near-grazing incidence angle (NGIA) spectroscopy. NGIA FT-IR spectra of films are characterised with a single phonon mode appearing in the spectral range 600–950 cm⁻¹ which shifts with increasing Ti concentration from 675 cm⁻¹ (Fe₂O₃) to 904 cm⁻¹ (TiO₂) thus exhibiting one-mode behavior. Electrochemical investigations made with the help of cyclic voltammetry (CV) and chronocoulometry (CPC) performed in 0.01M LiOH and in 1M LiClO₄/propylene carbonate electrolytes revealed that films are able to uptake reversibly Li⁺ ions with a charge capacity (Q) per film thickness (d) in the range 0.1–0.26 mC/cm²nm and 0.06 mC/cm²nm, respectively. The temperature at which the films were prepared alters the rate of Li⁺ insertion which is faster for less compact films obtained at 300°C. In situ UV-VIS spectroelectrochemical measurements revealed that Fe/Ti oxide films bleached in the UV spectral region (300 nm<λ<450 nm) and colored in the VIS spectral region (450 nm<λ<800 nm), thus exhibiting mixed anodic and cathodic electrochromism.     

Ultrafast Photoinduced Processes in Alizarin‐Sensitized Metal Oxide Mesoporous Films

Close to the edge : Photoexcitation of alizarin coupled to the surface of mesoporous TiO₂ films leads to ultrafast electron transfer to the TiO₂ conduction band (see picture). Complex kinetics after photoexcitation depend on the excitation energy, and indicate a position of the alizarin excited state close to the TiO₂ conduction band edge, where the density of acceptor states is reduced.

     

溶胶凝胶法制备铜铁矿结构p型透明导电氧化物薄膜

铜铁矿结构p型透明导电氧化物(transparent conducting oxide, TCO)薄膜是一类在电子学领域具有广泛应用前景的新材料,因其可与n-TCO薄膜形成真正意义上的“透明器件”而备受关注。本文介绍了铜铁矿结构p-TCO的结构特性以及溶胶凝胶法的基本原理和特点;系统地介绍了溶胶凝胶法制备铜铁矿结构p-TCO薄膜的工艺;分析比较了有机醇盐、无机盐溶胶体系的优缺点;最后讨论了进一步的发展方向,指出溶胶凝胶法是一种高效可行的制备p-TCO薄膜的方法。     

有机半导体薄膜空间电荷分布对晶体管性能影响的研究进展

有机场效应晶体管(OFETs)是下一代柔性电子产业的基础元件,具有可弯曲、透明、低成本、可溶液加工等优良特性,并逐渐开始应用于生物传感器、柔性显示等领域。 然而,OFETs仍存在如工作电流小、跨导小、开关比低、空气稳定性差等问题,限制了其进一步的发展。 OFETs器件的性能主要受到导电沟道中电荷和电流分布的影响,若能通过外加手段,调控沟道中的电荷和电流分布,可能获得具有更高性能或新机理的器件。 本文结合课题组内的工作,对国内外该领域的最新进展进行综述和展望。