6H-SiC电子输运的Monte Carlo模拟

从实际测量和单粒子Monte Carlo模拟两个方面研究了6H-SiC的电子输运规律,在模拟中考 虑了6H-SiC主要的散射机理,模拟的结果体现了6H-SiC具有良好的高温和高场特性以及迁移 率的各向异性,其横向迁移率和纵向迁移率相差近5倍.模拟结果和实验数据的对比说明了对 6H-SiC输运特性的模拟是正确的. 关键词： 6H-SiC Monte Carlo模拟 迁移率 散射机理     

SiC/SiO2界面粗糙散射对沟道迁移率影响的Monte Carlo研究

提出了一种SiC反型层表面粗糙散射的指数模型,并对6H-SiC反型层迁移率进行了单电子的Monte Carlo模拟,模拟中考虑了沟道区的量子化效应.模拟结果表明,采用表面粗糙散射的指数模型能够使SiC反型层迁移率的模拟结果和实验值符合得更好.模拟结果还反映出有效横向电场较高时表面粗糙散射的作用会变得更显著,电子的屏蔽效应降低了粗糙散射对沟道迁移率的影响,温度升高会引起沟道迁移率降低. 关键词： 6H-SiC 反型层迁移率 表面粗糙散射 指数模型     

4H-SiC MOSFET的温度特性研究

对4HSiCMOSFET的器件结构和温度特性进行了研究,总结了器件的结构参数对特性的影响,比较了不同温度下的输出特性以及饱和漏电流、阈值电压、跨导、导通电阻与温度的变化关系,模拟结果表明4HSiCMOSFET具有优异的温度特性,在800K下可以正常工作 关键词： 4H-SiC MOSFET     

AlGaN/GaN双异质结F注入增强型高电子迁移率晶体管

理论模拟了不同GaN沟道厚度的双异质结(AlGaN/GaN/AlGaN/GaN)材料对高电子迁移率晶体管(HEMT)特性的影响,并模拟了不同F注入剂量下用该材料制作的增强型器件的特性差异.采用双异质结材料,结合F注入工艺成功地研制出了较高正向阈值电压的增强型HEMT器件.实验研究了三种GaN沟道厚度制作的增强型器件直流特性的差异,与模拟结果进行了对比验证.采用降低的F注入等离子体功率,减小了等离子体处理工艺对器件沟道迁移率的损伤,研制出的器件未经高温退火即实现了较高的跨导和饱和电流特性.对14 nm GaN沟道厚度的器件进行了阈值电压温度稳定性和栅泄漏电流的比较研究,并且分析了双异质结器件的漏致势垒降低效应.     

埋氧层注氮工艺对部分耗尽SOI nMOSFET特性的影响

研究了埋氧层中注氮后对制作出的部分耗尽SOInMOSFET的特性产生的影响.实验发现，与不注氮的SIMOX基片相比，由注氮SIMON基片制作的nMOSFET的电子迁移率降低了.且由最低注入剂量的SIMON基片制作的器件具有最低的迁移率.随注入剂量的增加，迁移率略有上升，并趋于饱和.分析认为，电子迁移率的降低是由于Si/SiO2界面的不平整造成的.实验还发现，随氮注入剂量的提高，nMOSFET的阈值电压往负向漂移.但是，对应最低注入剂量的器件阈值电压却大于用SIMOX基片制作出的器件.固定氧化物正电荷及界面陷阱密度的大小和分布的变化可能是导致阈值电压变化的主要因素.另外发现，用注氮基片制作出的部分耗尽SOInMOSFET的kink效应明显弱于用不注氮的SIMOX基片制作的器件. 关键词： SOI nMOSFET 氮注入 电子迁移率 阈值电压     

SiC电子霍耳迁移率的计算

基于对自身能带结构的分析以及各向同性弛豫时间近似法,采用三椭球等能面、抛物线性简化,建立了适于模拟n型6H-SiC电子霍耳迁移率和霍耳散射因子的解析模型,精确描述了不同散射机制对于6H-SiC低场电子输运特性的影响.计算结果与实测值有很好的一致性.     

考虑量子效应的短沟道MOSFET二维阈值电压模型

通过数值方法求解泊松方程和薛定谔方程的自洽解，提出了考虑量子效应时不同于经典理论的阈值条件，并得出了精确的一维阈值电压模型，模拟结果与实验十分符合.在此基础上，基于准二维泊松方程，通过考虑短沟道效应和量子效应，建立了较为精确的适合于小尺寸MOSFET的量子修正阈值电压模型,模型同样适用于(超)深亚微米高k栅介质MOSFET电特性的模拟和结构参数的设计. 关键词： 阈值电压 量子效应 短沟道效应 高k栅介质     

二维6H-SiC光学特性的应变调控

为了减小6H-SiC的带隙、提高对可见光的吸收效率和载流子迁移速率,采用第一性原理研究了应变对6H-SiC的能带结构、光学吸收系数、载流子迁移率以及光催化特性的影响。结果表明：应变能够降低6H-SiC的导带底,但对价带顶没有影响,导致带隙减小。随着应变的增加,吸收曲线向低能级方向移动,即发生红移,有利于可见光的吸收。施加应变后空穴的载流子迁移率提高,有利于载流子移动,且空穴的载流子迁移率是电子的2.5倍,有利于空穴和电子的分离。综合应变对带隙大小、带边位置的影响可知,应变在±2%、±4%时对可见光的吸收以及光催化制氢最有效。综上所述,应变能够对6H-SiC的光学吸收和光催化特性有很好的调控作用。     

应变SiGe SOI量子阱沟道PMOSFET阈值电压模型研究

在绝缘层附着硅(SOI)结构的Si膜上生长SiGe合金制作具有SiGe量子阱沟道的SOI p型金属氧化物半导体场效应晶体管(PMOSFET)，该器件不仅具有SOI结构的优点，而且因量子阱中载流子迁移率高，所以进一步提高了器件的性能.在分析常规的Si SOI MOSFET基础上，建立了应变SiGe SOI 量子阱沟道PMOSFET的阈值电压模型和电流-电压(I-V)特性模型，利用Matlab对该结构器件的I-V特性、跨导及漏导特性进行了模拟分析，且与常规结构的器件作了对比.模拟结果表明，应变SiGe SOI量子阱沟道PMOSFET的性能均比常规结构的器件有大幅度提高. 关键词： 应变SiGe SOI MOSFET 阈值电压 模型     

单轴应变SiNMOSFET源漏电流特性模型

本文在建立单轴应变Si NMOSFET迁移率模型和阈值电压模型的基础上, 基于器件不同的工作区域, 从基本的漂移扩散方程出发, 分别建立了单轴应变Si NMOSFET源漏电流模型. 其中将应力的影响显式地体现在迁移率和阈值电压模型中, 使得所建立的模型能直观地反映出源漏电流特性与应力强度的关系. 并且对于亚阈区电流模型, 基于亚阈区反型电荷, 而不是采用常用的有效沟道厚度近似的概念, 从而提高了模型的精度. 同时将所建模型的仿真结果与实验结果进行了比较, 验证了模型的可行性. 该模型已经被嵌入进电路仿真器中, 实现了对单轴应变Si MOSFET 器件和电路的模拟仿真.     

低频振荡电位的能量和相位稳定性与偶极子电流活动相关性的仿真

能量和相位是分析脑节律的重要物理量, 虽有许多研究, 但其与脑组织电特性和脑节律源的关系尚不完全清楚, 弄清这一问题有助于脑电测量及脑功能和疾病的分析. 为此, 借鉴脑电正问题研究方法, 大脑可看作均匀球, 脑组织电特性用导体各向同性和各向异性电导率来表示, 脑节律源用准静态偶极子电流来模拟, 其活动表达为较低频率的正弦振荡, 在改变该活动的振幅和相位时程时, 用球表面剖分网格的振荡电位仿真脑节律, 提取节律的能量和相位, 计算源和节律的窄带相位稳定性. 结果表明: 仿真节律的能量随电导率增大而减小, 受网格位置、电导率各向异性、偶极子电流幅值和偏心位置影响较大; 但仿真节律的相位稳定性只与自身的相位时程有关. 说明能量与相位稳定性电学意义无交集, 同时用来分析脑节律可提供更多神经信息; 能量的电学意义更复杂, 取决于包括测量条件在内的多种因素; 相位稳定性的优势在于它仅与脑节律相位时程直接相关, 可预测的是脑的非线性导致的相位时程越离散, 则相位稳定性越差.     

An optimized design of 10-nm-scale dual-material surrounded gate MOSFETs for digital circuit applications

In this paper, we have proposed and simulated a new 10-nm Dual-Material Surrounded Gate MOSFETs (DMSG) MOSFETs for nanoscale digital circuit applications. The subthreshold electrical properties such as subthreshold current–voltage characteristics, subthreshold swing factor, threshold voltage and drain induced barrier lowering (DIBL) of the device have been ascertained and mathematical models have been developed. It has been observed that the DM design can effectively suppress short-channel effects as compared to single material gate structure. The proposed analytical expressions are used to formulate the objective functions, which are the pre-requisite of genetic algorithm computation. The problem is then presented as a multi-objective optimization one where the subthreshold electrical parameters are considered simultaneously. Therefore, the proposed technique is used to search of the optimal electrical and geometrical parameters to obtain better electrical performance of the 10-nm-scale transistor. These characteristics make the optimized 10-nm transistors potentially suitable for deep nanoscale logic and memory applications.     

Full-Quantum Simulation of Graphene Self-Switching Diodes

We present a quantum study on the electrical behavior of the self-switching diode(SSD). Our simulation is based on non-equilibrium Green's function formalism along with an atomistic tight-binding model. Using this method,electrical characteristics of devices, such as turn-on voltage, rectification ratio, and differential resistance, are investigated. Also, the effects of geometrical variations on the electrical parameters of SSDs are simulated. The carrier distribution inside the nano-channel is successfully simulated in a two-dimensional model under zero,reverse, and forward bias conditions. The results indicate that the turn-on voltage, rectification ratio, and differential resistance can be optimized by choosing appropriate geometrical parameters.     

Nonlinear discharge dynamics in small bore current channels

General properties of current and voltage dynamics for discharges having narrow current channels are studied using a generic transmission-line model with active parameters. The line parameters for the inductance and capacitance per unit length are, except for positivity and some physically motivated monotonicity conditions, left as unspecified functions of local line current and voltage. The resistance per unit length is taken to vary inversely with current, thereby assuring dynamical properties common to transient electrical discharges. Emphasis is placed on determining global properties of current front dynamics, i.e., the speed and direction of motion of the free boundary interfaces between instantaneously active (current-carrying) and passive (current-free) regions of the discharge current channel, and the space-time paths across which current reversal occurs. The results are applied to surface electrical discharges initiated at a charge spot     

Effect of viscosity on ultrasound wave reflection from a solid/liquid interface

A study of the simulated reflection of a wideband ultrasound shear wave from the solid/viscous fluid interface is presented. Various parameters affecting reflection factors including the material properties of the solid, fluid properties like density and viscosity, and the operating frequency are discussed. Simulated ultrasonic response waveforms are compared with the experimentally obtained data for NIST traceable calibration standards of viscosity. A good agreement was observed between the simulated and experimental waveforms at various viscosities and for different solid substrates.     

体硅、SOI及DSOI MOSFET器件级电、热分析

利用简化的半导体电学方程,数值模拟获得了各种电学参数的分布,并结合简化电阻模型,模拟了体硅、SOI及DSOI的MOSFET器件的温度场。结果表明MOSFET器件的沟道,特别是靠近漏的区域电场强度及电流密度等各项电、热特性参数在该区域变化剧烈,是最主要的热源区。     

利用倒梯矩形电子阻挡层降低深紫外激光二极管的电子泄露

为了有效降低深紫外激光二极管(DUV-LD)在有源区的电子泄露,提出了一种新颖的具有倒梯矩形的电子阻挡层(EBL)结构。通过使用Crosslight软件将矩形,梯矩形和倒梯矩形三种不同的结构进行仿真研究,比较三种结构器件的能带图、辐射复合率、电子空穴浓度、P-I以及V-I特性等,得出倒梯矩形EBL更能有效地抑制电子的泄露,从而改善了器件的光学和电学性能。     

Optical investigation methods for determining the impact of rain drops on HVDC corona

Corona behavior of HVDC overhead lines plays a significant role when dimensioning transmission lines. Rain constitutes an important study case since corona effects (e.g. losses, discharge amplitudes) are considerably affected. In this paper, imaging methods are introduced to investigate the impact of rain on corona behavior. Geometrical properties of rain drops on a stranded conductor were extracted. UV-images were used to precisely locate discharges. The methods' capabilities are demonstrated using data from an indoor test line during a simulated rain shower. Optical and electrical data were correlated. These methods aim to support the development of surfaces with favorable corona properties.     

Electrophysical properties and structural features of shungite (natural nanostructured carbon)

This paper presents the results of investigations of the electrical conductive properties with a nanoscale locality at nanoampere currents and the results of an analysis of the correlation between the electrical conductivity and structural features of natural glassy carbon, i.e., shungite. The investigations have been performed using atomic force microscopy, electric force spectroscopy, scanning spreading resistance microscopy, X-ray spectroscopic analysis, and Raman spectroscopy. It has been found that there are differences in electrical conductive properties of the structurally similar shungite samples formed under different PT conditions. Based on the analysis of the structural parameters and specific features of the shungite compositions, it has been shown that the effect of intercalation of impurities into boundary layers of graphene sheets has the most significant influence on the electrical and physical properties of the shungites. The differences in types and values of conductivity of the shungite samples are determined by the different degrees of intercalation.     

纳米CdS/碳纳米管复合材料的光电特性

基于CdS良好的光学性质和单壁碳纳米管(SWCNT)优异的电子学性质, 制备了纳米CdS/SWCNT复合材料和纳米CdS/聚乙烯亚胺(PEI)功能化SWCNT复合材料, 并利用日光灯光源模拟太阳光研究了它们的光电性质. 结果表明, 纳米CdS/SWCNT复合材料呈现显著的负光电导现象, 而纳米CdS/PEI-SWCNT复合材料呈现强烈的正光电导现象. 用电子转移理论对这一结果进行了解释. 两样品在大角度弯折的情况下, 光电性质均基本没有变化. 因此, 纳米CdS/碳纳米管复合材料在光电领域, 尤其是新兴的柔性光电子学领域有着良好的应用前景. 关键词： 碳纳米管 CdS 光电材料 复合材料