Cathodic and anodic pre-treated boron doped diamond with different sp content: Morphological,structural, and impedance spectroscopy characterizations

In this work, the influence of cathodic (Red) and anodic (Ox) pre-treatment on boron doped diamond (BDD) films grown with different sp²/sp³ ratios was systematically studied. The sp²/sp³ ratios were controlled by the addition of CH₄ of 1,3,5 and 7 sccm in the gas inlet during the growth process. The electrodes were treated in 0.5 mol L⁻¹ H₂SO₄ at −3 and 3 V vs Ag/AgCl, respectively, for 30 min. The electrochemical response of BDD films was investigated using electrochemical impedance spectroscopy (EIS) and Mott–Schottky Plot (MSP) measurements. Four film sample sets were produced in a hot filament chemical vapor deposition reactor. During the growth process, an additional H₂ line passing through a bubbler containing the B₂O₃ dissolved in methanol was used to carry the boron. The scanning electron microscopy morphology showed well faced films with a small decrease in their grain size as the CH₄ concentration increased. The Raman spectra depicted a pronounced sp² band, mainly for films with 5 and 7 sccm of CH₄. MSP showed a decrease in the acceptor concentration as the CH₄ increased indicating the CH₄ influence on the doping process for Red–BDD and Ox–BDD samples. Nonetheless, an apparent increase in the acceptor concentrations for both Ox–BDD samples was observed compared to that for Red–BDD samples, mainly attributed to the surface conductive layer (SCL) formation after this strong oxidation process. The EIS Nyquist plots for Red–BDD showed a capacitance increase for the films with higher sp² content (5 and 7 sccm). On the other hand, the Nyquist plots for Ox–BDD can be described as semicircles near the origin, at high frequencies, where their charge transfer resistance strongly varied with the sp² increase in such films.     

Direct synthesis and characterization of highly ordered functional mesoporous silica thin films with high amino-groups content

A series of continuous, crack-free, highly ordered amino-functionalized mesoporous silica thin films have been directly synthesized by co-condensation of tetraethoxysilane (TEOS) and 3-aminopropyltriethoxysilane (APTES) in the presence of cationic CH₃(CH₂)₁₅N⁺(CH₃)₃Br⁻ (CTAB), nonionic C₁₆H₃₃(OCH₂CH₂)₁₀OH (Brij-56) or triblock copolymer H(OCH₂CH₂)₂₀(OCH(CH₃)CH₂)₇₀(OCH₂CH₂)₂₀)OH (P123) surfactant species under acidic conditions by sol-gel dip-coating. The molar ration of APTES/(TEOS + APTES) in the starting sol attains a value of 0.4. The effect of the sol aging on the mesostructure of thin films is systematically studied, and the optimal sol aging time is obtained for different surfactant systems. The amino-functionalized mesoporous silica thin films exhibit long-range ordering of 2D hexagonal (p6mm) and 3D cubic (Fm3m) pore arrays of size range from 2.2 to 8.3 nm following surfactants extraction as demonstrated by XRD, TEM and physical adsorption techniques. Based on BET surface area and weight loss, the surface coverage of amino-groups for thin films prepared using different surfactants is calculated to be 3.2 and above amino-groups per nm², which is very useful and promising for incorporating inorganic ions and biomolecules into these mesoporous silica materials.     

Thermal decomposition of toluene: Overall rate and branching ratio

The two-channel thermal decomposition of toluene, C₆H₅CH₃ → C₆H₅CH₂ + H (1) and C₆H₅CH₃ → C₆H₅ + CH₃ (2), was investigated in shock tube experiments over the temperature range of 1400-1780 K at a pressure of 1.5 (±0.1) bar. Rate coefficients for reactions (1) and (2) were determined by monitoring benzyl radical (C₆H₅CH₂) absorption at 266 nm during the decomposition of toluene diluted in argon and modeling the temporal behavior of the benzyl concentration with a kinetic model. The first-order rate coefficients determined at a pressure of 1.5 bar are expressed by k₁(T) = 2.09 × 10¹⁵ exp (−87510 [cal/mol]/RT) [s⁻¹] and k₂(T) = 2.66 × 10¹⁶ exp (−97880 [cal/mol]/RT) [s⁻¹]. The resulting branching ratio, k₁/(k₁ + k₂), ranges from 0.8 at 1350 K to 0.6 at 1800 K.     

Structure and hardness of a-C:H films prepared by middle frequency plasma chemical vapor deposition

a-C:H films were prepared by middle frequency plasma chemical vapor deposition (MF-PCVD) on silicon substrates from two hydrocarbon source gases, CH₄ and a mixture of C₂H₂ + H₂, at varying bias voltage amplitudes. Raman spectroscopy shows that the structure of the a-C:H films deposited from these two precursors is different. For the films deposited from CH₄, the G peak position around 1520 cm⁻¹ and the small intensity ratio of D peak to G peak (I(D)/I(G)) indicate that the C-C sp³ fraction in this film is about 20 at.%. These films are diamond-like a-C:H films. For the films deposited from C₂H₂ + H₂, the Raman results indicate that their structure is close to graphite-like amorphous carbon. The hardness and elastic modulus of the films deposited from CH₄ increase with increasing bias voltage, while a decrease of hardness and elastic modulus of the films deposited from a mixture of C₂H₂ + H₂ with increasing bias voltage is observed.     

Theoretical study on the kinetics for OH reactions with CH3OH and C2H5OH

Kinetics and mechanisms for reactions of OH with methanol and ethanol have been investigated at the CCSD(T)/6-311 + G(3df, 2p)//MP2/6-311 + G(3df, 2p) level of theory. The total and individual rate constants, and product branching ratios for the reactions have been computed in the temperature range 200-3000 K with variational transition state theory by including the effects of multiple reflections above the wells of their pre-reaction complexes, quantum-mechanical tunneling and hindered internal rotations. The predicted results can be represented by the expressions k₁ = 4.65 × 10⁻²⁰ × T^2.68 exp(414/T) and k₂ = 9.11 × 10⁻²⁰ × T^2.58 exp(748/T) cm³ molecule⁻¹ s⁻¹ for the CH₃OH and C₂H₅OH reactions, respectively. These results are in reasonable agreements with available experimental data except that of OH + C₂H₅OH in the high temperature range. The former reaction produces 96-89% of the H₂O + CH₂OH products, whereas the latter process produces 98-70% of H₂O + CH₃CHOH and 2-21% of the H₂O + CH₂CH₂OH products in the temperature range computed (200-3000 K).     

Binding of rare earth metal complexes with an ofloxacin derivative to bovine serum albumin and its effect on the conformation of protein

The water-soluble Pr (Ⅲ) and Nd (Ⅲ) complexes with an ofloxacin derivative have been prepared and characterized. The single-crystal X-ray diffraction showed that the Pr (III) and Nd (III) complexes have the similar molecular structure. Under physiological pH condition, the effects of [PrL(NO₃)₂(CH₃OH)](NO₃) and [NdL(NO₃)₂(CH₃OH)](NO₃) on bovine serum albumin (BSA) were examined using fluorescence spectroscopy in combination with UV-vis absorbance and circular dichroism (CD) spectra. The result reveals that the quenching mechanism of fluorescence of BSA by two complexes is a static quenching process and the number of binding sites is about 1 for both. The thermodynamic parameters (ΔH=−14.52 kJ mol⁻¹, ΔS=56.54 J mol⁻¹ K⁻¹ for [PrL(NO₃)₂(CH₃OH)](NO₃) and ΔH=−24.63 kJ mol⁻¹, ΔS=22.07 J mol⁻¹ K⁻¹ for [NdL(NO₃)₂(CH₃OH)](NO₃)) indicate that hydrophobic and electrostatic interactions are the main binding force in the complexes-BSA system. The binding average distance between complexes and BSA was obtained on the basis of Förster's theory. In addition, it was proved by the CD spectra that the BSA secondary structure was changed in the presence of complexes in an aqueous solution.     

The electrodeposition behaviors and magnetic properties of Ni-Co films

Ni-Co films with different compositions and microstructures were produced on ITO glasses by electrodeposition from sulphate bath at 25 °C. Cyclic voltammograms give a result that the increase in the Co²⁺ concentration displaces Ni-Co alloy oxidation peaks to negative potential with high Co current distributions. It is observed that the content of cobalt in the films increases from 22.42% to 56.09% as the molar ratio of CoSO₄/NiSO₄ varying from 0.015/0.085 to 0.045/0.055 in electrolyte. XRD patterns reveal that the structure of the films strongly depends on the Co content in the deposited films. The saturation magnetization (M_s) moves up from 144.84 kA m⁻¹ to 342.35 kA m⁻¹ and coercivity (H_c) falls from 15.27 kA m⁻¹ to 7.27 kA m⁻¹ with the heat treatment temperature increasing from 25 °C to 450 °C. The saturation magnetization (M_s) and coercivity (H_c) move up from 340.97 kA m⁻¹ and 7.98 kA m⁻¹ to 971.58 kA m⁻¹ and 18.62 kA m⁻¹ with the Co content increasing from 22.42% to 56.09% after annealing at 450.     

Configuration dependence of photon stimulated ion desorption from methyl ester compounds induced by core excitation

Photon stimulated ion desorption (PSID) from methyl ester terminated self-assembled monolayer (MHDA-SAM, HS(CH₂)₁₅COOCH₃) and methyl mercaptoacetate (MA, HSCH₂COOCH₃) on Ag has been investigated using soft X-ray in the C and O K-edge regions. In MHDA-SAM on Ag, site-selective ion desorption has been clearly observed at resonant core excitations of C_1s, O_1s(OCH₃) → σ^∗(OCH₃) and O_1s(OCH₃) → σ^∗(COCH₃). Ion intensity in MA on Ag is obviously reduced for (n = 1-3) at C_1s, O_1s(OCH₃) → σ^∗(OCH₃) excitations, and no site-selective reaction at O_1s(OCH₃) → σ^∗(COCH₃) excitations has been observed. These reactions may be influenced by configurational difference of reactive sites. It is suggested that surface effects on the selective reaction due to positioning methyl ester group near the surface plays an important role.     

Properties of highly oriented spray-deposited fluorine-doped tin oxide thin films on glass substrates of different thickness

Transparent conducting thin films of fluorine-doped tin oxide (FTO) have been deposited onto the preheated glass substrates of different thickness by spray pyrolysis process using SnCl₄·5H₂O and NH₄F precursors. Substrate thickness is varied from 1 to 6 mm. The films are grown using mixed solvent with propane-2-ol as organic solvent and distilled water at optimized substrate temperature of 475 °C. Films of thickness up to 1525 nm are grown by a fine spray of the source solution using compressed air as a carrier gas. The films have been characterized by the techniques such as X-ray diffraction, optical absorption, van der Pauw technique, and Hall effect. The as-deposited films are preferentially oriented along the (2 0 0) plane and are of polycrystalline SnO₂ with a tetragonal crystal structure having the texture coefficient of 6.19 for the films deposited on 4 mm thick substrate. The lattice parameter values remain unchanged with the substrate thickness. The grain size varies between 38 and 48 nm. The films exhibit moderate optical transmission up to 70% at 550 nm. The figure of merit (φ) varies from 1.36×10⁻⁴ to 1.93×10⁻³ Ω⁻¹. The films are heavily doped, therefore degenerate and exhibit n-type electrical conductivity. The lowest sheet resistance (R_s) of 7.5 Ω is obtained for a typical sample deposited on 4 mm thick substrate. The resistivity (ρ) and carrier concentration (n_D) vary over 8.38×10⁻⁴ to 2.95×10⁻³ Ω cm and 4.03×10²⁰ to 2.69×10²¹ cm⁻³, respectively.     

Poly(3-methylthiophene)-based porous silicon substrates as a urea-sensitive electrode

Poly(3-methylthiophene) (P3MT)-based porous silicon (PS) substrates were fabricated and characterized by cyclic voltammetry, scanning electron microscopy, and auger electron spectroscopy. After doping urease (Urs) into the polymeric matrix, sensitivity and physicochemical properties of the P3MT-based PS substrate was investigated compared to planar silicon (PLS) and bulk Pt substrates. PS substrate was formed by electrochemical anodization in an etching solution composed of HF, H₂O, and ethanol. Subsequently, Ti and Pt thin-films were sputtered on the PS substrate. Effective working electrode area (A_eff) of the Pt-deposited PS substrate was determined from a redox reaction of Fe(CN)₆³⁻/Fe(CN)₆⁴⁻ redox couple in which nearly reversible cyclic voltammograms were obtained. The i_p versus v^1/2 plots showed that A_eff of the PS-based Pt thin-film electrode was 1.62 times larger than that of the PLS-based electrode.Electropolymerization of P3MT on both types of electrodes were carried out by the anodic potential scanning under the given potential range. And then, urease molecules were doped to the P3MT film by the chronoamperometry. Direct electrochemistry of a Urs/P3MT/Pt/Ti/PS electrode in an acetonitrile solution containing 0.1 mol/L NaClO₄ was introduced compared to a P3MT/Pt/Ti/PS electrode at scan rates of 10 mV s⁻¹, 50 mV s⁻¹, and 100 mV s⁻¹.Amperometric sensitivity of the Urs/P3MT/Pt/Ti/PS electrode was ca. 1.67 μA mM⁻¹ per projected unit square centimeter, and that of the Urs/P3MT/Pt/Ti/PLS electrode was ca. 1.02 μA mM⁻¹ per projected unit square centimeter in a linear range of 1-100 mM urea concentrations. 1.6 times of sensitivity increase was coincident with the results from cyclic voltammetrc analysis.Surface morphology from scanning electron microscopy (SEM) images of Pt-deposited PS electrodes before and after the coating of Urs-doped P3MT films showed that pore diameter and depth were 2 μm and 10 μm, respectively. Multilayered-film structures composed of metals and organics for both electrodes were also confirmed by auger electron spectroscopy (AES) depth profiles.     

Low-temperature oxidation of SiGe by liquid-phase deposition

Low-temperature silicon dioxide (SiO₂) films were grown on silicon germanium (SiGe) surfaces using the liquid-phase deposition (LPD) method. The growth solutions of LPD-SiO₂ are hydrofluorosilicic acid (H₂SiF₆) and boric acid (H₃BO₃). It was found that the growth rate increases with increasing temperature and concentration of H₃BO₃. The Auger electron spectroscopy profile shows that no pileup of Ge atoms occurs at the interface of SiO₂/SiGe after the LPD-SiO₂ growth. Al/LPD-SiO₂/p-SiGe MOS capacitors were prepared to determine capacitance-voltage (C-V) and current-voltage (I-V) characteristics. In our experiments, a low leakage current density of 8.69 × 10⁻⁹ A/cm² under a 2 MV/cm electric field was observed. Such a value is much smaller than those of plasma- and thermal-oxides as a result of no plasma damage and a lower growth temperature. Moreover, lower oxide charges and interface charge densities of 3.82 × 10¹⁰ cm⁻² and 1.12 × 10¹¹ eV⁻¹ cm⁻², respectively, were achieved in our LPD-SiO₂ compared to direct photochemical-vapor-deposition-SiO₂.     

Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing

Tin dioxide (SnO₂) thin films were deposited by plasma enhanced-atomic layer deposition (PE-ALD) on Si(1 0 0) substrate using dibutyl tin diacetate (DBTA) ((CH₃CO₂)₂Sn[(CH₂)₃-CH₃]₂) as precursor. The process parameters were optimized as a function of substrate temperature, source temperature and purging time. It is observed that the surface phenomenon of the thin films was changed with film thickness. Atomic force microscopy (AFM) images and X-ray diffraction (XRD) pattern were used to observe the texture and crystallanity of the films. The films deposited for 100, 200 and 400 cycles were characterized by XPS to determine the chemical bonding properties. XPS results reveal that the surface dominant oxygen species for 100, 200 and 400 cycles deposited films are O₂⁻, O⁻ and O²⁻, respectively. The 200 cycles film has exhibited highest concentration of oxygen (O⁻) species before and after annealing. Conductivity studies revel that this film has best adsorption strength to the oxygen ions forming on the surface. The sensor with 200 cycles SnO₂ thin film has shown highest sensitivity to CO gas than other films. A correlation between the characteristics of Sn3d_5/2 and O1s XPS spectra before and after annealing and the electrical behavior of the SnO₂ thin films is established.     

Chemical composition of ZrC thin films grown by pulsed laser deposition

ZrC films were grown on (1 0 0) Si substrates by the pulsed laser deposition (PLD) technique using a KrF excimer laser working at 40 Hz. The nominal substrate temperature during depositions was set at 300 °C and the cooling rate was 5 °C/min. X-ray diffraction investigations showed that films deposited under residual vacuum or under 2 × 10⁻³ Pa of CH₄ atmosphere were crystalline, exhibiting a (2 0 0)-axis texture, while those deposited under 2 × 10⁻² Pa of CH₄ atmosphere were found to be equiaxed and with smaller grain size. The surface elemental composition of as-deposited films, analyzed by Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), showed the usual high oxygen contamination of carbides. Once the topmost 2-4 nm region was removed, the oxygen concentration rapidly decreased, down to around 3-8% only in bulk. Simulations of the X-ray reflectivity (XRR) curves indicated a smooth surface morphology, with roughness values below 1 nm (rms) and films density values of around 6.30-6.45 g/cm³, very close to the bulk density. The growth rate, estimated from thickness measurements by XRR was around 8.25 nm/min. Nanoindentation results showed for the best quality ZrC films a hardness of 27.6 GPa and a reduced modulus of 228 GPa.     

Preparation of superhydrophobic films on titanium as effective corrosion barriers

Stable superhydrophobic films were prepared on the electrochemical oxidized titania/titanium substrate by a simple immersion technique into a methanol solution of hydrolyzed 1H,1H,2H,2H-perfluorooctyltriethoxysilane [CF₃(CF₂)₅(CH₂)₂Si(OCH₂CH₃)₃, PTES] for 1 h at room temperature followed by a short annealing at 140 °C in air for 1 h. The surface morphologies and chemical composition of the film were characterized by means of water contact angle (CA), field emission scanning electron microscopy (FESEM), atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS). The water contact angle on the surface of this film was measured to be as high as 160°. SEM images showed that the resulting surfaces exhibited special hierarchical structure. The special hierarchical structure along with the low surface energy leads to the high surface superhydrophobicity. The corrosion resistance ability and durance property of the superhydrophobic film in 3.5 wt.% NaCl solution was evaluated by the electrochemical impedance spectroscopy (EIS). The anticorrosion properties of the superhydrophobic film are compared to those of unmodified pure titanium and titania/titanium substrates. The results showed that the superhydrophobic film provides an effective corrosion resistant coating for the titanium metal even with immersion periods up to 90 d in the 3.5 wt.% NaCl solution, pointing to promising future applications.     

Electrochemical and surface characterisation of carbon-film-coated piezoelectric quartz crystals

The electrochemical properties of carbon films, of thickness between 200 and 500 nm, sputter-coated on gold- and platinum-coated 6 MHz piezoelectric quartz crystal oscillators, as new electrode materials have been investigated. Comparative studies under the same experimental conditions were performed on bulk electrodes. Cyclic voltammetry was carried out in 0.1 M KCl electrolyte solution, and kinetic parameters of the model redox systems Fe(CN)₆^3−/4− and [Ru(NH₃)₆]^3+/2+ as well as the electroactive area of the electrodes were obtained. Atomic force microscopy was used in order to examine the surface morphology of the films, and the properties of the carbon films and the electrode-solution interface were studied by electrochemical impedance spectroscopy. The results obtained demonstrate the feasibility of the preparation and development of nanometer thick carbon film modified quartz crystals. Such modified crystals should open up new opportunities for the investigation of electrode processes at carbon electrodes and for the application of electrochemical sensing associated with the EQCM.     

Structure and properties of DLC–MoS2 thin films synthesized by BTIBD method

Diamond-like carbon (DLC)–MoS₂ composite thin films were synthesized using a biased target ion beam deposition (BTIBD) technique in which MoS₂ was produced by sputtering a MoS₂ target using Ar ion beams while DLC was deposited by ion beam deposition with CH₄ gas as carbon source. The structure and properties of the synthesized films were characterized by X-ray diffraction, X-ray absorption near edge structure (XANES), Raman spectroscopy, nanoindentation, ball-on-disk testing, and corrosion testing. The effect of MoS₂ target bias voltage, ranging from −200 to −800 V, on the structure and properties of the DLC–MoS₂ films was further investigated. The results showed that the hardness decreases from 9.1 GPa to 7 GPa, the Young?s modulus decreases from 100 GPa to 78 GPa, the coefficient of friction (COF) increases from 0.02 to 0.17, and the specific wear rate coefficient (k) increases from 5×10⁻⁷ to 5×10⁻⁶ mm³ N⁻¹ m⁻¹, with increasing the biasing voltage from 200 V to 800 V. Also, the corrosion resistance of the DLC–MoS₂ films decreased with the raise of biasing voltage. Comparing with the pure DLC and pure MoS₂ films, the DLC–MoS₂ films deposited at low biasing voltages showed better tribological properties including lower COF and k in ambient air environment.     

Properties of a-Si:H films deposited by RF magnetron sputtering at 95 °C

In this work we have investigated the dependence of optical and electrical properties of RF sputtered undoped a-Si:H films and B or P doped a-Si:H films on hydrogen flow rate (F_H). Low deposition temperature of 95 °C was used, a process compatible with low-cost plastic substrates. FTIR spectroscopy and ESR measurements were used for the investigation of Si-H_x bonding configurations, and concentrations of hydrogen and dangling bonds. We found that there is a strong correlation between the total hydrogen concentration, the dangling bonds density and the optoelectronic properties of the films. The best photosensitivity value was found to be 1.4 × 10⁴ for the undoped films. The dark conductivity (σ_D) of the doped layers varied from 5.9 × 10⁻⁸ to 6.5 × 10⁻⁶ (Ω cm)⁻¹ for different ratios F_Ar/F_H. These variations are attributed to both the different B and P concentrations in the films (according to SIMS measurements) and the enhanced disorder of the films introduced by the large number of inactive impurities. The B doping efficiency is lower compared to the P one. A small photovoltaic effect is also observed in n-i-p solar cells fabricated on polyimide (PI) substrates having ITO as antireflective coating, with an efficiency of 1.54%.     

Influence of crystallization on the spectral features of nano-sized ferroelectric barium strontium titanate (Ba0.7Sr0.3Tio3) thin films

Ferroelectric barium strontium titanate (Ba_0.7Sr_0.3TiO₃)(BST) thin films have been prepared from barium 2-ethylhexanoate [Ba[CH₃(CH₂)₃CH(C₂H₅)CO₂]₂]_, strontium 2-ethylhexanoate [Sr[CH₃(CH₂)₃CH(C₂H₅)CO₂]₂] and titanium(IV) isopropoxide [TiOCH(CH₃)₂]₄ precursors using a modified sol-gel technique. The precursor except [TiOCH(CH₃)₂]₄ were synthesized in the laboratory. Transparent and crack-free films were fabricated on pre-cleaned quartz substrates by spin coating. The structural and optical properties of films annealed at different temperatures have been investigated. The as-fired films were found to be amorphous that crystallized to the tetragonal phase after annealing at 550 °C for 1 h in air. The lattice constants “a” and “c” were found to be 3.974 A and 3.990 A, respectively. The grain sizes of the films annealed at 450, 500 and 550 °C were found to be 30.8, 36.0 and 39.8 nm respectively. The amorphous film showed very high transparency (∼95%), which decreases slightly after crystallization (∼90%). The band gap and refractive index of the amorphous and crystalline films were estimated. The optical dispersion data are also analyzed in the light of the single oscillator model and are discussed.     

Reactivities of ultrathin alumina films exposed to intermediate pressures of H2O: Substrate-mediated mechanism for growth and loss of surface order

The response of ordered ultrathin Al₂O₃ films on NiAl(1 1 0) and Ni₃Al(1 1 0) substrates to sequential exposures at varying pressures of H₂O between 10⁻⁷ Torr and 10⁻³ Torr, ambient temperature, was characterized by LEED, AES and density functional theory (DFT) calculations. In all cases, an increase in average oxide thickness, as determined by AES, was observed, consistent with a field-induced oxide growth mechanism. Ordered oxide films of initial average thicknesses of 7 Å and 12 Å grown on NiAl(1 1 0) achieved a limiting thickness of 17(1) Å, while films of initial thickness of 7 Å and 11 Å grown on Ni₃Al(1 1 0) achieved a limiting thickness of 12(1) Å. The LEED patterns for the thinner (7 Å) films were not observed after exposure to 10⁻⁵ Torr (NiAl(1 1 0)), or 10⁻⁴ Torr (Ni₃Al(1 1 0)). In contrast, LEED patterns for the films of greater initial thickness persisted after exposures to 10⁻³ Torr UHV. DFT calculations indicate an Al vacancy formation energy that is significantly greater (by ∼0.5 eV) on the surface that has the thicker oxide film, directly opposite to what may be naively expected. A simple coordination argument supports these numerical results. Therefore, the greater limiting oxide thickness observed on NiAl(1 1 0) demonstrates that the rate determining step in the oxide growth process is not Al removal from the metal substrate and transport across the oxide/metal interface. Instead, the results indicate that the determining factor in the oxide growth mechanism is the kinetic barrier to Al diffusion from the substrate bulk to the oxide/metal interface. The persistence of the LEED patterns observed for the films of greater initial oxide thickness indicates that the surface disorder generally observed for alumina films grown on aluminide substrates and exposed to intermediate pressures of H₂O is due to the growth of a disordered alumina layer over an ordered substrate, rather than to direct H₂O interaction with terrace sites.     

Microwave spectrum of two top molecules in the excited states dimethyl ether, dimethyl sulfide, and dimethyl silane

Microwave spectra of dimethyl ether, dimethyl sulfide, and dimethyl silane in the torsionally excited states have been measured. The methyl internal rotations of these molecules were analyzed from the observed multiplets and from the reported multiplets of transitions. The method developed for ethyl silane in the previous paper was extended to equivalent two top molecules. For equivalent two top molecules, apparent barriers of methyl internal rotations obtained from the experiments were corrected by the kinetic and potential cross terms. They are V₃=2645.8±10.0, 2632.4 ± 42.9, 2146.0 ± 13.8, 1651.5 ± 10.1, 1648.0 ± 13.7, and 1649.9 ± 11.8 cal/mol for (CH₃)₂O, (CD₃)₂O, (CH₃)₂S, (CH₃)₂SiH₂, (CH₃)₂SiD₂, and (CH₃)₂SiHD, respectively. The potential cross terms, V₁₂(1−cos3α₁)(1−cos3α₂) terms are negligible for the three molecules, while V^′₁₂sin3α₁sin3α₂ terms are also very close to zero except those for (CH₃)₂O and (CD₃)₂O which are small but not negligible (V^′₁₂=−124.4,−158.0 cal/mol). The investigations were extended to those of non-equivalent two top species and the corrected barriers of the methyl tops, V₃, are obtained to be 2615.6 ± 8.6 and 2155.0 ± 15.2 cal/mol for CH₃OCD₃ and CH₃SCD₃. The corrected barrier, V₃(CD₃) of CH₃OCD₃, is obtained to be 2634.4 ± 7.1 cal/mol, while that of CH₃SCD₃ cannot be solved due to the lack of the data available.