Effects of electronic confinement and substrate on the low-temperature growth of Pb islands on Si(1 0 0)-2 × 1 surfaces

The growth of Pb films on the Si(1 0 0)-2 × 1 surface has been investigated at low temperature using scanning tunneling microscopy. Although the orientation of the substrate is (1 0 0), flat-top Pb islands with (1 1 1) surface can be observed. The island thickness is confined within four to nine atomic layers at low coverage. Among these islands, those with a thickness of six layers are most abundant. Quantum-well states in Pb(1 1 1) islands of different thickness are acquired by scanning tunneling spectroscopy. They are found to be identical to those taken on the Pb(1 1 1) islands grown on the Si(1 1 1)7 × 7 surface. Besides Pb(1 1 1) islands, two additional types of Pb islands are formed: rectangular flat-top Pb(1 0 0) islands and rectangular three-dimensional (3D) Pb islands, and both their orientations rotate by 90° from a terrace to the adjacent one. This phenomenon implies that the structures of Pb(1 0 0) and 3D islands are influenced by the Si(1 0 0)-2 × 1 substrate.     

Ab initio calculations of structural, electronic and dynamical properties of BeSe(1 1 0) surface

We use an ab initio pseudopotential method within the local-density approximation to determine the structural and electronic properties of the BeSe(1 1 0) surface. The relaxed geometry of this surface shows tilted cation-anion chains, with the anions being raised. The general pattern of the electronic structure of this surface is similar to that on other II-VI(1 1 0) surfaces. The phonon spectrum and corresponding surface density of states are also calculated using a linear response approach based on the density functional perturbation theory. In our calculations, we have found two localized phonon modes in the acoustic-optical gap region. The atomic displacement patterns of these surface phonon modes are presented and discussed.     

Theoretical studies of electronic states and phonon modes on the TiC(0 0 1)(1 × 1) surface

We present a comprehensive picture of structural and electronic properties of the TiC(0 0 1)(1 × 1) surface. Our investigations are based on first-principles calculations within the local-density approximation of the density-functional theory. Good agreement has been observed between our calculation and experimental data for the atomic geometry of the surface. In particular, the calculated bond lengths between the first-layer C and the second-layer Ti (d_1C-2Ti = 2.188 Å) and between the first-layer Ti and the second-layer C (d_1Ti-2C = 2.031 Å) are in good agreement with the corresponding experimental values of 2.25 Å and 2.14 Å, respectively. We have also identified surface electronic states and provided clear support for previously available photoemission measurements. We have further calculated surface phonon modes at the zone centre and at the zone-edge point X using a linear response scheme based on the ab initio pseudopotential method. Our calculated surface phonon results are in excellent agreement with electron energy loss spectroscopy results.     

Structural study of Si(1 1 1)-6 × 1-Ag surface using surface X-ray diffraction

The surface structure of Si(1 1 1)-6 × 1-Ag was investigated using surface X-ray diffraction techniques. By analyzing the CTR scattering intensities along 00 rod, the positions of the Ag and reconstructed Si atoms perpendicular to the surface were determined. The results agreed well with the HCC model proposed for a 3 × 1 structure induced by alkali-metals on a Si(1 1 1) substrate. The heights of the surface Ag and Si atoms did not move when the surface structure changed from Si(1 1 1)-√3 × √3-Ag to Si(1 1 1)-6 × 1-Ag by the desorption of the Ag atoms. From the GIXD measurement, the in-plane arrangement of the surface Ag atoms was determined. The results indicate that the Ag atoms move large distances at the phase transition between the 6 × 1 and 3 × 1 structures.     

First-principles calculations on electronic structures of Fe-vacancy-codoped TiO2 anatase (1 0 1) surface

The electronic structures of Fe-doped TiO₂ anatase (1 0 1) surfaces have been investigated by all spin-polarized density functional theory (DFT) plane-wave pseudopotential method. The general gradient approximation (GGA)+U (Hubbard coefficient) method has been adopted to describe the exchange-correlation effects. Through the density functional calculations for the formation energies of various configurations, the complex of a substitutional Fe plus an O vacancy was found to form easily in the most range of O chemical potential. The calculated density of the states of the system of Fe-doped surface with a surface oxygen vacancy shows a band gap narrowing from 2.8 to 1.9 eV comparing with the pure surface due to the synergistic effects of surface Fe impurities with O vacancies. The system processes high visible light sensitivity and photocatalytic ability by decreasing extrinsic absorption energy. By comparing the partial DOS of some O and Ti atoms lying in the outermost and bottom layers of Fe-doped surfaces, it was found that the influence of Fe impurities on the electronic structure of the system is localized.     

Ab initio calculations of surface structure and electronic properties caused by adsorption of Ca atoms on a Si(1 1 0) surface

The adsorption of Ca metals onto a Si(1 1 0) surface has been theoretically investigated by first-principle total-energy calculations. We employed a local density approximation of the density functional theory as well as a pseudopotential theory to study the atomic and electronic properties of the Ca/Si(1 1 0) structure. The (1×1) and (2×1) surface structures were considered for Ca coverages of 0.5 and 0.25 ML, respectively. It is found that the (1×1) phase is not expected to occur even for rich Ca regime. It was found that Ca adatoms are adsorbed on top of the surface and form a bridge with the uppermost Si atoms. The most stable structure of Ca/Si(1 1 0)-(2×1) surface produces a semiconducting surface band structure with a direct band gap that is slightly smaller than that of the clean surface. We have observed one filled and two empty surface states in the gap region. These empty surface states originated from the uppermost Si dangling bond states and the Ca 4s states. Furthermore, the Ca-Si bonds have an ionic nature with almost complete charge transfer from Ca to the surface Si atoms. The structural parameters of the ground state atomic configuration are detailed and compared with the available results of metal-adsorbed Si(1 1 0) surface, Ca/Si(0 0 1), and Ca/Si(1 1 1) structures.     

Theoretical STM images of alkaline-earth metal adsorbed Si(1 1 1)3 × 2 surfaces

We have performed total-energy calculations to study theoretical scanning tunneling microscopy (STM) images of the Si(1 1 1)3 × 2 surfaces induced by the adsorption of alkaline-earth metals (AEMs). Previously, in a series of works on Ba/Si(1 1 1) system, we have found that the observed Si(1 1 1)3 × 1-Ba LEED phase indeed has a 3 × 2 periodicity with a Ba coverage of 1/6 ML and the HCC substrate structure. Based on results of the Ba case, we proposed that the HCC structure is also adopted for other AEM atoms, which was confirmed by our recent work. In this paper, we mainly report the STM simulations for different AEM systems to compare with existing experimental data. We discuss the difference in the detailed STM images for different AEM adsorbates. Especially, the difference in filled-state images between Mg and other AEM atoms is attributed to the strong Mg-Si interaction.     

First principles studies of a Xe atom adsorbed on Nb(1 1 0) surface

We study adsorption sites of a single Xe adatom on Nb(1 1 0) surface using a density functional theory approach: the on-top site is the most favorable position for adsorption. We compare the binding features of the present study to earlier studies of a Xe adatom on close-packed (1 1 1) surfaces of face-centered cubic metals. The different features are attributed through a microscopic picture to the less than half filled d-states in Nb.     

Cooperative growth of nano-islands on Si(1 0 0) surface

By setting up two low temperature regions on a terrace of a vicinal Si(1 0 0)-2 × 1 surface, we have studied growth of nano-islands in the two regions using a kinetic Monte Carlo simulation. At first two islands are formed and grow independently without any supply of atoms from the outside. As the growth proceeds further, two islands are connected with each other by forming a bridge region. After the connection, the growth changes dramatically showing a competitive mode in one stage and a cooperative mode in the other. Two islands grow cooperatively in a sense that a larger island ceases to grow and waits until the size of the other smaller island becomes similar to that of the larger one. When two islands become similar in size, one of the islands grows faster than the other competitively, by accumulating atoms from then smaller one. The origin of the growth mode is analyzed.     

Characterization of diamond (1 0 0) surface with oxygen termination

Ab initio density functional theory (DFT) was employed to study reconstructions of diamond (1 0 0) surfaces in the presence of hydrogen, oxygen and hydroxyl. Clean and (2 × 1):1H surfaces are taken as reference. The properties of oxidization diamond surfaces with several adsorption structures, namely, O-on-top (OT) site, O-bridge (BR) site, hydroxyl (-OH), hydroxyl/hydroxyl, OT/hydroxyl, BR/hydroxyl have been considered. The calculated results indicate that the BR model is much more stable than the OT model, and the most energetically favorable structures of oxygenated surfaces are those with chemisorbed hydroxyl (-OH) group. Furthermore, the stability of the structures is also discussed from the point of HOMO-LUMO gap. Analysis of electronic structures shows that the presence of hydrogen induces surface conductivity whereas oxygen weakens it.     

Ga-induced superstructures on the Si(1 1 1) 7 × 7 surface

Monolayer Ga adsorption on Si surfaces has been studied with the aim of forming p-delta doped nanostructures. Ga surface phases on Si can be nitrided by N₂⁺ ion bombardment to form GaN nanostructures with exotic electron confinement properties for novel optoelectronic devices. In this study, we report the adsorption of Ga in the submonolayer regime on 7 × 7 reconstructed Si(1 1 1) surface at room temperature, under controlled ultrahigh vacuum conditions. We use in-situ Auger electron spectroscopy, electron energy loss spectroscopy and low energy electron diffraction to monitor the growth and determine the properties. We observe that Ga grows in the Stranski-Krastanov growth mode, where islands begin to form on two flat monolayers. The variation in the dangling bond density is observed during the interface evolution by monitoring the Si (LVV) line shape. The Ga adsorbed system is subjected to thermal annealing and the residual thermal desorption studied. The difference in the adsorption kinetics and desorption dynamics on the surface morphology is explained in terms of strain relaxation routes and bonding configurations. Due to the presence of an energetic hierarchy of residence sites of adatoms, site we also plot a 2D phase diagram consisting of several surface phases. Our EELS results show that the electronic properties of the surface phases are unique to their respective structural arrangement.     

Mechanisms of preferential adsorption on the Si(1 1 1)7 × 7 surface

The surface relaxation mechanisms governing the preferential adsorption of metal atoms onto the faulted half-cells of a 7 × 7 reconstructed Si(1 1 1) surface are studied by rate equations and kinetic Monte Carlo simulations. The versatility of these mechanisms to control the formation of quasi-perfect 2D arrays of metal clusters is revealed via the optimization of the deposition/annealing conditions as a function of operating mechanisms, the Si(1 1 1)7 × 7 energy landscape, and the thermal stability of the created clusters. The influence on the formation process of such nanoarrays of the balance between kinetic limitations, which are especially relevant on Si(1 1 1)7 × 7, and thermodynamic tendencies is discussed.     

STM image visualization of Si(1 1 1) 7 × 7 surface (graphic simulation and implementation)

The possibilities of graphic STM image simulation of a clean Si(1 1 1) 7 × 7 surface at atomic level are indicated. The presented procedure takes into account various types of deformation on the surface near the Fermi level in order to classify them and explain their origin. It also gives a clear hint to insert relevant physical phenomena in a suggested analysis. This goal is achieved exploiting the results of DAS (dimmer adatom stacing fault) model by means of standard mathematical programmes. A clean Si(1 1 1) 7 × 7 surface is considered as the representative example, but similar evaluation is possible for another non-metal and metal surfaces.     

Nanostructure formation aided by self-organised Bi nanolines on Si(0 0 1)

We provide a mini review of recent theoretical investigations of nanostructure formation aided by self-organised Bi nanolines on the Si(0 0 1) surface. It is suggested that hydrogen-passivated single-domain Si(0 0 1) produced by the formation of defect-free, hundreds of nm long, and 1.2-1.5 nm wide Bi nanolines provides an appealing template with preferential sites for adsorption of other elements. Based on ab initio pseudopotential calculations it is suggested that using the Bi nanoline template it should be possible to grow the following structures: mixed Ge-Si dimer structures on the Si(0 0 1) terrace between two neighbouring Bi nanolines; small In nanoclusters along the nanoline; and line and cluster structures of Fe atoms with novel electronic and magnetic properties.     

Nano-crater formation on a Si(1 1 1)-(7 × 7) surface by slow highly charged ion-impact

Using scanning tunneling microscopy (STM) and time of flight secondary ion mass spectrometry (TOF/SIMS), we observed radiation effects on a Si(1 1 1)-(7 × 7) surface in the collision of a single highly charged ion (HCI) with a charge state q up to q = 50. The STM observation with atomic resolution revealed that a nanometer sized crater-like structure was created by a single HCI impact, where the size increased rapidly with q. The secondary ion yields also increased with q in which multiply charged Si ions (Siⁿ⁺) were clearly observed in higher q HCI-collisions. The sputtering mechanism is briefly discussed, based on the so-called Coulomb explosion model.     

Study of vacancy on diamond (1 0 0) (2 × 1) surface from first-principles

Structure and energy related properties of neutral and charged vacancies on relaxed diamond (1 0 0) (2 × 1) surface were investigated by means of density functional theory. Calculations indicate that the diffusion of a single vacancy from the top surface layer to the second layer is not energetically favored. Analysis of energies in charged system shows that neutral state is most stable on diamond (1 0 0) (2 × 1) surface. The multiplicity of possible states can exist on diamond (1 0 0) surface in dependence on the surface Fermi level, which supports that surface diffusion of a vacancy is mediated by the change of vacancy charge states. Analysis of density of states shows surface vacancy can be effectively measured by photoelectricity technology.     

Layer-resolved photoelectron diffraction from Si(0 0 1) and GaAs(0 0 1)

Photoelectron diffraction in the layer-resolved mode brings more detailed information about local atomic arrangement than is obtained in the standard mode. This is demonstrated in crystals with diamond and zinc-blende structures, both for unpolarized photon excitation as well as for circularly polarized excitation. The full angular distributions of photoemission intensities are evaluated for large atomic clusters representing ideally truncated surfaces of Si(0 0 1) and GaAs(0 0 1). Highly structured layer-resolved patterns enable a more detailed understanding of the standard mode outcomes. Photoelectron intensities from atomic layers placed at different depths under the crystal surface provide direct evidence about electron attenuation and its anisotropy in crystals.     

Growth of (√3 × √3)-Ag and (1 1 1) oriented Ag islands on Ge/Si(1 1 1) surfaces

We have studied the growth of Ag on Ge/Si(1 1 1) substrates. The Ge/Si(1 1 1) substrates were prepared by depositing one monolayer (ML) of Ge on Si(1 1 1)-(7 × 7) surfaces. Following Ge deposition the reflection high energy electron diffraction (RHEED) pattern changed to a (1 × 1) pattern. Ge as well as Ag deposition was carried out at 550 °C. Ag deposition on Ge/Si(1 1 1) substrates up to 10 ML has shown a prominent (√3 × √3)-R30° RHEED pattern along with a streak structure from Ag(1 1 1) surface. Scanning electron microscopy (SEM) shows the formation of Ag islands along with a large fraction of open area, which presumably has the Ag-induced (√3 × √3)-R30° structure on the Ge/Si(1 1 1) surface. X-ray diffraction (XRD) experiments show the presence of only (1 1 1) peak of Ag indicating epitaxial growth of Ag on Ge/Si(1 1 1) surfaces. The possibility of growing a strain-tuned (tensile to compressive) Ag(1 1 1) layer on Ge/Si(1 1 1) substrates is discussed.     

The dissociative adsorption of borane on the Ge(1 0 0)-2 × 1 surface: A density functional theory study

By means of cluster models coupled with density functional theory, we have studied the hydroboration of the Ge(1 0 0)-2 × 1 surface with BH₃. It was found that the Ge(1 0 0) surface exhibits rather different surface reactivity toward the dissociative adsorption of BH₃ compared to the C(1 0 0) and Si(1 0 0) surfaces. The strong interaction still exists between the as-formed BH₂ and H adspeices although the dissociative adsorption of BH₃ on the Ge(1 0 0) surface occurs readily, which is in distinct contrast to that on the C(1 0 0) and Si(1 0 0) surfaces. This can be understood by the electrophilic nature of the down Ge atom, which makes it unfavourable to form a GeH bond with the dissociating proton-like hydrogen. Alternatively, it can be attributed to the weak proton affinity of the Ge(1 0 0) surface. Nevertheless, the overall dissociative adsorption of BH₃ on group IV semiconductor surfaces is favourable both thermodynamically and kinetically, suggesting the interesting analogy and similar diversity chemistry of solid surface in the same group.     

Adsorption of organic molecules by photochemical reaction on Cl:Si(1 1 1) and H:Si(1 1 1) evaluated by HREELS

The covalent attachment of alkyl groups to silicon surfaces, via carbon-silicon bond formation, has been attempted using gas-surface reactions starting from Cl-terminated Si(1 1 1) or H:Si(1 1 1) under ultraviolet light irradiation. The formation of Cl-terminated Si(1 1 1) and its resulting stability were examined prior to deposition of organic molecules. High-resolution electron energy loss spectroscopy (HREELS) was utilized for detecting surface-bound adsorbates. The detection of photo-deposited organic species on Cl:Si(1 1 1) from gas-phase CH₄ or CH₂CH₂ was not significant. On H:Si(1 1 1), it was evident that after the photoreaction with gas-phase C₂H₅Cl, C₂H₅ groups were chemically bonded to the surface Si atoms through single covalent bonds. The C₂H₅ groups were thermally stable at temperatures below 600 K. Alkyl monolayers prepared on silicon surfaces by dry process will lead to a new prospective technology of nanoscale fabrication and biochemical applications.