Fabrication of uniform Au silicide islands on the Si(1 1 1)-(7 × 7) substrate

The Au silicide islands have been fabricated by additional deposition of Au on the prepared surface at 270 °C where the Si islands of magic sizes were formed on the Si(1 1 1)-(7 × 7) dimer-adatom-stacking fault substrate. The surface structure on the Au silicide islands shows the Au/Si(1 1 1)-√3 × √3 reconstructed structure although the substrate remains 7 × 7 DAS structure. The size of the Au silicide islands depends on the size distribution of the preformed Si islands, because the initial size and shape of the Si islands play important roles in the formation of the Au silicide island. We have achieved the fabrication of the Au silicide islands of about the same size (∼5 nm) and the same shape by controlling the initial Si growth and the additional Au growth conditions.     

Surfactant effect of Sb on the growth of MnSi1.7 layers on Si(0 0 1)

Deposition of one monolayer of Sb prior to the deposition of Mn at 600 °C is observed to increase the MnSi_1.7 island density by about two orders of magnitude as well as to change the crystalline orientation of the silicide grains. The preferential epitaxial orientation of MnSi_1.7 grains grown by this process is determined to be MnSi_1.7(1 0 0)[0 1 0]||Si(0 0 1)[1 0 0]. This growth procedure results in the silicide growth into the Si matrix. For comparison, the same deposition process carried out without Sb leads to silicide formation on top of the substrate surface. The observed morphological changes of the MnSi_1.7 layers can be explained by a reduced surface diffusion of the Mn atoms on Si(0 0 1) in presence of the Sb monolayer. Additionally, lateral Si diffusion is considered to be nearly suppressed, which is responsible for the observed silicide growth into the substrate.     

Shape variation in epitaxial microstructures of gold silicide grown on Br-passivated Si(1 1 1) surfaces

Kinetic Monte Carlo simulations for growth on substrates of three-fold symmetry predict the growth of islands of various shapes depending on the growth temperature [Phys. Rev. Lett. 71 (1993) 2967]. On Br-Si(1 1 1) substrates growth of epitaxial gold silicide islands of equilateral triangular and trapezoidal shapes have earlier been observed by annealing at the Au-Si eutectic temperature, 363 °C [Phys. Rev. B 51 (1995) 14330]. We carried out annealing with temperature variation within a small window--(363 ± 30) °C. This has led to island growth of additional shapes like regular hexagon, elongated hexagon, walled hexagon and dendrite. Some of the observed island shapes have not been predicted.     

Nanowedge island formation on Mo(1 1 0)

The deposition of ultrathin Fe films on the Mo(1 1 0) surface at elevated temperatures results in the formation of distinctive nanowedge islands. The model of island formation presented in this work is based on both experiment and DFT calculations of Fe adatom hopping barriers. Also, a number of classical molecular dynamics simulations were carried out to illustrate fragments of the model. The islands are formed during a transition from a nanostripe morphology at around 2 ML coverage through a Bales-Zangwill type instability. Islands nucleate when the meandering step fronts are sufficiently roughened to produce a substantial overlap between adjacent steps. The islands propagate along the substrate [0 0 1] direction due to anisotropic diffusion/capture processes along the island edges. It was found that the substrate steps limit adatom diffusion and provide heterogeneous nucleation sites, resulting in a higher density of islands on a vicinal surface. As the islands can be several layers thick at their thinnest end, we propose that adatoms entering the islands undertake a so-called “vertical climb” along the sides of the island. This is facilitated by the presence of mismatch-induced dislocations that thread to the sides of the islands and produce local maxima of compressive strain. Dislocation lines also trigger initial nucleation on the surface with 2-3 ML Fe coverage. The sides of the nanowedge islands typically form along low-index crystallographic directions but can also form along dislocation lines or the substrate miscut direction.     

Bimodal growth of manganese silicide on Si(1 0 0)

Two different growth modes of manganese silicide are observed on Si(1 0 0) with scanning tunneling microscopy. 1.0 and 1.5 monolayer Mn are deposited at room temperature on the Si(1 0 0)-(2 × 1) substrate. The as-grown Mn film is unstructured. Annealing temperatures between room temperature and 450 °C lead to small unstructured clusters of Mn or Mn_xSi_y. Upon annealing at 450 °C and 480 °C, Mn reacts chemically with the Si substrate and forms silicide islands. The dimer rows of the substrate become visible again. Two distinct island shapes are found and identified as MnSi and Mn₅Si₃.     

Surface etching induced by Ce silicide formation on Si(1 0 0)

We investigate the temperature-dependent surface etching process induced by Ce silicide on Si(1 0 0) using scanning tunneling microscopy and X-ray photoelectron spectroscopy. We found that step edges on the Si(1 0 0) surface are gradually roughened due to the formation of Ce silicide as a function of substrate temperature. Unlike the Si(1 1 1) surface, however, terrace etching also occurs in addition to step roughening at 500 °C. Moreover, we found that Si(1 0 0) dimers are released and formed dimer vacancy lines because bulk diffusion of Ce silicide into Si(1 0 0) surface occurs the defect-induced strain at higher temperature (∼600 °C).     

Temperature dependent low energy electron microscopy study of Ge growth on Si(1 1 3)

We investigated the initial Ge nucleation and Ge island growth on a Si(1 1 3) surface using low energy electron microscopy and low energy electron diffraction. The sample temperature was varied systematically between 380 °C and 590 °C. In this range, a strong temperature dependence of the island shape is observed. With increasing temperature the Ge islands are elongated in the direction. Simultaneously, the average island size increases while their density decreases. From the Arrhenius-like behaviour of the island density, a Ge adatom diffusion barrier height of about 0.53 eV is deduced.     

Anisotropic diffusion of Cu adatoms on strained Cu (1 1 1) surface

Diffusion of Cu atoms on a strained Cu (1 1 1) surface was studied by molecular dynamic simulation using an EAM potential. The anisotropic diffusion behaviour is found when the uniaxial strain is imposed on the surface, which does not exist under the biaxial strain. The migration of the adatom is suppressed along the tensile strain direction. The results suggest that different island morphology can be obtained by controlling anisotropic diffusion of adatoms on the strained surfaces during film growth.     

Photoemission electron microscopy study of anthracene growth on Si(1 1 1)

The thin film growth of anthracene films on Si(1 1 1) surfaces is studied by photoemission electron microscopy (PEEM). The thin film growth of anthracene on Si(1 1 1) is similar to the growth of pentacene on silicon. Initially a layer of flat lying molecules chemisorbs on the surface. Subsequent growth of fractal islands with standing up molecules proceeds on top of this flat layer.     

Au island growth on a Si(1 1 1) vicinal surface

Au island nucleation and growth on a Si(1 1 1) 7 × 7 vicinal surface was studied by means of scanning tunneling microscopy. The surface was prepared to have a regular array of step bunches. Growth temperature and Au coverage were varied in the 255-430 °C substrate temperature range and from 1 to 7 monolayers, respectively. Two kinds of islands are observed on the surface: Au-Si reconstructed islands on the terraces and three-dimensional (3D) islands along the step bunches. Focusing on the latter, the dependence of island density, size and position on substrate temperature and on Au coverage is investigated. At 340 °C and above, hemispherical 3D islands nucleate systematically on the step edges.     

Effects of electronic confinement and substrate on the low-temperature growth of Pb islands on Si(1 0 0)-2 × 1 surfaces

The growth of Pb films on the Si(1 0 0)-2 × 1 surface has been investigated at low temperature using scanning tunneling microscopy. Although the orientation of the substrate is (1 0 0), flat-top Pb islands with (1 1 1) surface can be observed. The island thickness is confined within four to nine atomic layers at low coverage. Among these islands, those with a thickness of six layers are most abundant. Quantum-well states in Pb(1 1 1) islands of different thickness are acquired by scanning tunneling spectroscopy. They are found to be identical to those taken on the Pb(1 1 1) islands grown on the Si(1 1 1)7 × 7 surface. Besides Pb(1 1 1) islands, two additional types of Pb islands are formed: rectangular flat-top Pb(1 0 0) islands and rectangular three-dimensional (3D) Pb islands, and both their orientations rotate by 90° from a terrace to the adjacent one. This phenomenon implies that the structures of Pb(1 0 0) and 3D islands are influenced by the Si(1 0 0)-2 × 1 substrate.     

Study of Ni/Si(1 0 0) solid-state reaction with Al addition

The characteristics of Ni/Si(1 0 0) solid-state reaction with Al addition (Ni/Al/Si(1 0 0), Ni/Al/Ni/Si(1 0 0) and Al/Ni/Si(1 0 0)) is studied. Ni and Al films were deposited on Si(1 0 0) substrate by ion beam sputtering. The solid-state reaction between metal films and Si was performed by rapid thermal annealing. The sheet resistance of the formed silicide film was measured by four-point probe method. The X-ray diffraction (XRD) was employed to detect the phases in the silicide film. The Auger electron spectroscopy was applied to reveal the element profiles in depth. The influence of Al addition on the Schottky barrier heights of the formed silicide/Si diodes was investigated by current-voltage measurements. The experimental results show that NiSi forms even with the addition of Al, although the formation temperature correspondingly changes. It is revealed that Ni silicidation is accompanied with Al diffusion in Ni film toward the film top surface and Al is the dominant diffusion species in Ni/Al system. However, no Ni_xAl_y phase is detected in the films and no significant Schottky barrier height modulation by the addition of Al is observed.     

Pd adsorption on Si(1 1 3) surface: STM and XPS study

Pd-induced surface structures on Si(1 1 3) have been studied by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). In the initial process of the Pd adsorption below 0.10 ML, Pd silicide (Pd₂Si) clusters are observed to form randomly on the surface. By increasing the Pd coverage to 0.10 ML, the clusters cover the entire surface, and an amorphous layer is formed. After annealing the Si(1 1 3)-Pd surface at 600 °C, various types of islands and chain protrusions appears. The agglomeration, coalescence and crystallization of these islands are observed by using high temperature (HT-) STM. It is also found by XPS that the islands correspond to Pd₂Si structure. On the basis of these results, evolution of Pd-induced structures at high temperatures is in detail discussed.     

Growth of oriented crystalline Ag nanoislands on air-exposed Si(0 0 1) surfaces

Growth of Ag islands under ultrahigh vacuum condition on air-exposed Si(0 0 1)-(2 × 1) surfaces has been investigated by in-situ reflection high energy electron diffraction (RHEED). A thin oxide is formed on Si via exposure of the clean Si(0 0 1)-(2 × 1) surface to air. Deposition of Ag on this oxidized surface was carried out at different substrate temperatures. Deposition at room temperature leads to the growth of randomly oriented Ag islands while well-oriented Ag islands, with (0 0 1)_Ag||(0 0 1)_Si, [1 1 0]_Ag||[1 1 0]_Si, have been found to grow at substrate temperatures of ≥350 °C in spite of the presence of the oxide layer between Ag islands and Si. The RHEED patterns show similarities with the case of Ag deposition on H-passivated Si(0 0 1) surfaces.     

STM study of successive Ge growth on “V”-stripe patterned Si (0 0 1) surfaces at different growth temperatures

The self-assembly process of Ge islands on patterned Si (0 0 1) substrates is investigated using scanning tunneling microscopy. The substrate patterns consist of one-dimensional stripes with “V”-shaped geometry and sidewalls inclined by an angle of 9° to the (0 0 1) surface. Onto these stripes, Ge is deposited in a step-wise manner at different temperatures from 520 °C to 650 °C. At low temperature, the Ge first grows nearly conformally over the patterned surface but at about 3 monolayers a strong surface roughening due to reconstruction of the surface ridges as well as side wall ripple formation occurs. At 600 °C, a similar roughening takes place, but Ge accumulates within the grooves such that at a critical thickness of 4.5 monolayers, 3D islands are formed at the bottom of the grooves. This accumulation process is enhanced at 650 °C growth, so that the island formation starts about 1 monolayers earlier. At 600 and 650 °C, all islands are all aligned at the bottom of the stripes, whereas at 550 °C Ge island form preferentially on top of ridges. The experimental observations are explained by the strong temperature dependence of Ge diffusion over the patterned surface.     

Study of nickel silicide formation on Si(1 1 0) substrate

Nickel silicide formation on Si(1 1 0) and Si(1 0 0) substrate was investigated in this paper. It is confirmed that nickel monosilicide (NiSi) starts to form after 450 °C annealing for Si(1 0 0) substrate, but a higher annealing temperature is required for NiSi formation on Si(1 1 0) substrate, which is demonstrated by X-ray diffraction (XRD) and Raman scattering spectroscopy. The higher formation temperature of NiSi is attributed to the larger Ni₂Si grain size formed on Si(1 1 0) substrate. Ni silicided Schottky contacts on both Si(1 0 0) and Si(1 1 0) substrates were also fabricated for electrical characteristics evaluation. It clearly reveals that the rectifying characteristics of NiSi/n-Si(1 1 0) Schottky contacts is inferior to that of NiSi/n-Si(1 0 0) Schottky contacts, which is attributed to a lower Schottky barrier height and a rougher contact interface. The formation kinetics for nickel silicide on Si(1 1 0) substrate is also discussed in this paper.     

Temperature- and coverage-dependent evolution of the Au/Pd(1 1 0) surface structure

The morphology and the atomic scale structure of thin gold films (up to 2.5 ML) on Pd(1 1 0) were studied by means of scanning tunneling microscopy and surface X-ray diffraction. At room temperature the films exhibit a multilayer growth mode accompanied by the formation of highly anisotropic islands. Annealing above 500 K significantly increases the smoothness of the gold films, which are in registry with the substrate. Above a critical threshold of two monolayers a (1 × 2) missing-row reconstructed film is found. This reconstructed surface is well ordered after annealing at temperatures above 580 K. The specific gold film morphology is envisaged as a way to relax the strain caused by the mismatch between gold and palladium.     

Effect of Pb adatom flux rate on adlayer coverage for Stranski-Krastanov growth mode on Si(1 1 1)7 × 7 surface

Lead (Pb) has been a prototypical system to study diffusion and reconstruction of silicon surfaces. However, there is a discrepancy in literature regarding the critical coverage at which island formation takes place in the Stranski-Krastanov (S-K) mode. We address this issue by studying the initial stages of evolution of the Pb/Si(1 1 1)7 × 7 system by careful experiments in ultra-high vacuum with in situ characterization by auger electron spectroscopy, electron energy loss spectroscopy and low-energy electron diffraction. We have adsorbed Pb onto clean Si(1 1 1 )7 × 7 surface with sub-monolayer control at different flux rates of 0.05 ML/min, 0.14 ML/min and 0.22 ML/min, at room temperature. The results clearly show that the coverage of the Pb adlayer before the onset of 3D Pb islands in the S-K mode depends on the flux rates. LEED results show the persistence of the (7 × 7) substrate reconstruction until the onset of the island formation, while EELS results do not show any intermixing at the interface. This suggests that the flux rates influence the kinetics of growth and the passivation of dangling bonds to result in the observed rate-dependent adlayer coverages.     

Self-assembled InAs island formation on GaAs (1 1 0) by metalorganic vapor phase epitaxy

Formation of self-assembled InAs 3D islands on GaAs (1 1 0) substrate by metal organic vapor phase epitaxy has been investigated. Relatively uniform InAs islands with an average areal density of 10⁹ cm⁻²are formed at 400 ° C using a thin InGaAs strain reducing (SR) layer. No island formation is observed without the SR layer. Island growth on GaAs (1 1 0) is found to require a significantly lower growth temperature compared to the more conventional growth on GaAs (1 0 0) substrates. In addition, the island height is observed to depend only weakly on the growth temperature and to be almost independent of the V/III ratio and growth rate. Low-temperature photoluminescence at 1.22 eV is obtained from the overgrown islands.     

Electrochemical Au deposition on stepped Si(1 1 1)-H surfaces: 3D versus 2D growth studied by AFM and X-ray diffraction

In order to grow magnetic layers on silicon substrates, a non-magnetic buffer layer is often needed to avoid silicide formation and to reproduce the perpendicular magnetic anisotropy obtained on metal single crystals, as in the case of Co on Au(1 1 1) and Pt(1 1 1). In this context, we have studied the electrochemical growth of Au buffer layers, and show that it is possible to obtain different film morphologies on hydrogen-terminated vicinal Si(1 1 1) surfaces by varying the electrochemical deposition parameters and solution composition. Two different morphologies have been obtained as observed by atomic force microscopy: continuous 2D Au films (chloride solution at pH 4), and films consisting in flat top 3D Au islands decorating the Si(1 1 1) step edges (cyanide solution at pH 14). X-ray diffraction measurements reveal that the gold layer and islands have Au(1 1 1) orientation and are in epitaxy with the Si(1 1 1) surface. In the case of islands, the lateral facets have also Au(1 1 1) orientation. Results are discussed within a model in which the breaking of the Si-H surface bonds plays a major role in the Au nucleation and growth mechanisms.