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1.
刘祖刚  薛敏钊 《光学学报》1996,16(10):465-1470
制备了以苯乙烯锘三苯胺衍生物为空穴传输层Alq3为发光层的双层有机薄膜电致姨光器件。还把不同厚度的恶二唑衍生物加在SA和Alq3之间制备了两种三层结构的有机薄膜电致发光器件,实现了SA的蓝色发光。进行了器件存放实验,发现了器件在大气中有较好的稳定性。  相似文献   

2.
制备了基于F16CuPc和CuPc的双异质结结构的双极型有机薄膜晶体管。该器件的载流子迁移率是相同工艺制备的F16CuPc和CuPc双层单异质结有机薄膜晶体管器件的4~5倍。同时,该双异质结结构还能调整载流子的阈值电压,减少双层结构对薄膜厚度等工艺条件的苛刻要求。这种双异质结结构为提升双极型有机薄膜晶体管器件的性能提供了一种有效方法。  相似文献   

3.
研究了二苯基邻菲罗啉以及氟化锂作为电极缓冲层对底栅顶接触型有机薄膜晶体管性能的影响,结果表明二苯基邻菲罗啉是一种比氟化锂更好的缓冲层材料。通过对二苯基邻菲罗啉缓冲层厚度的优化,获得了迁移率为0.302 cm2·V-1·s-1、阈值电压为-31.2 V、开关比为6.2×102的器件。器件性能提升的原因是由于二苯基邻菲罗啉缓冲层的引入降低了金电极与并五苯界面的空穴注入势垒与接触电阻。  相似文献   

4.
We fabricate organic thin films using the copolymer of methyl methacrylate and glycidyl methacrylate (PMMA- GMA) as a gate dielectric with a simple top-contact structure. Copper phthalocyanine (CuPc) TFTs are fabricated and the influences of annealing on the performance are studied. The mobilities increase from 2.5 × 10^3 cm^2/Vs to 4.2 × 10^3 cm^2/Vs and threshold voltages decrease from -18 V to -10 V after annealing. The good performances of the devices approach those obtained with inorganic gate dielectric materials such as silicon dioxide under the same technical conditions. It is fully proven that PMMA-GMA is a competitive candidate as an excellent gate insulation layer.  相似文献   

5.
Organic thin transistors (OTFTs) on indium tin oxide glass substrates are prepared with polymethyl-methacrylate-co-glyciclyl-methacrylate (PMMA-GMA) as the gate insulator layer and copper phthalocyanine as the organic semiconductor layer. By controlling the thickness, the average roughness of surface is reduced and the OTFT performance is improved with leak current decreasing to 10^-11 A and on/off ratio of 10^4. Under the condition of drain-source voltage -20 V, a threshold voltage of -3.5 V is obtained. The experimental results show that PMMA-GMA is a promising insulator material with a dielectric constant in a range of 3.9-5.0.  相似文献   

6.
有机薄膜材料的电致发光具有低压直流驱动、高亮度、高效率、多色、可制成大面积等优点 ,近几年来取得突破性的进展引起了越来越多的关注和兴趣。本文主要介绍了它的发展历程、器件的结构与材料、发光的基本原理等  相似文献   

7.
A multilayer waveguide window is demonstrated to exhibit wide bandwidth and high transmission for applications in high-frequency microwave tubes. A transfer matrix approach is employed to discretize the dielectric function profile of the multilayer heterostructure in a rectangular waveguide. The closed form has been obtained and the corresponding reflection and transmission characteristics have been carried out. The analytical calculation is also compared with the result of numerical simulation via the finite-element code HFSS. The exact calculation agrees with the numerical simulation very well. By comparison, the approach not only enhances the accuracy and efficiency, but also gives a good criterion for the design. The results show that the bandwidth for a transmission of 99%, i.e., S 11 below –20 dB, can be optimized to be about 8.75 GHz at a central frequency of 35 GHz or about 25%. A wide-bandwidth waveguide window can be easily designed for Ka-band and W-band tubes, and even for higher frequency ones.  相似文献   

8.
Laser-induced forward transfer (LIFT) has been used to deposit pixels of an organic semiconductor, distyryl-quaterthiophenes (DS4T). The dynamics of the process have been investigated by shadowgraphic imaging for the nanosecond (ns) and picosecond (ps) regime on a time-scale from the laser iradiation to 1.5 μs. The morphology of the deposit has been studied for different conditions. Intermediate sacrificial layer of gold or triazene polymer has been used to trap the incident radiation. Its role is to protect the layer to be transferred from direct irradiation and to provide a mechanical impulse strong enough to eject the material.  相似文献   

9.
We report on the development of hybrid organic/inorganic thin-film transistors using regioregular poly-3-hexylthiophene (P3HT) semiconductor material deposited by means of the solid-phase Laser Induced Forward Transfer (LIFT) technique. P3HT pixels were LIFT-printed onto Au/Ti source and drain electrodes formed on silicon dioxide/p+-type Si substrate. Deposition of the P3HT pixels was investigated as a function of the laser fluence using donor substrates with and without a dynamic release layer. Device electrical characterization reveals efficient field-effect action of the bottom gate on the organic channel. The transfer IDS-VGS characteristics exhibit well-defined sub-threshold, linear and saturation regimes designating LIFT as a promising technique for hybrid organic/inorganic transistor technology.  相似文献   

10.
在真空室内一次性制备了具有多层栅介质层结构的有机薄膜晶体管(OTFTs).结果表明,制备的OTFTs具有电控开关、存储和光敏多重功能特性.分析认为,存储特性归功于器件的结构,采用了分离的CaF2纳米粒子岛作为电荷俘获中心.在光照环境下,观察到了两种不同类型的光响应特性.快速的光响应来自于有源层吸收了能量大于带隙的光子所...  相似文献   

11.
采用旋涂法预先在SiO2衬底表面形成一层聚(4-乙烯基苯酚)(PVP)作为表面修饰层,以喷墨打印的6,13-双(三异丙基甲硅烷基乙炔基)并五苯(TIPS并五苯)作为有源层制作有机薄膜晶体管,有效改善了有机半导体薄膜的形貌。采用真空热蒸镀工艺制备源漏电极,形成底栅顶接触结构的有机薄膜晶体管(OTFT)器件。作为对比,在未经过表面修饰的SiO2衬底上采用相同条件打印TIPS并五苯薄膜晶体管,发现在经过PVP修饰的SiO2衬底上打印的单点厚度更均匀,咖啡环效应被抑制或被消除;而通过多点交叠打印形成的矩形薄膜的晶粒尺寸更大,相应的OTFT器件具有更高的场效应迁移率。在有PVP修饰层的衬底上制作的OTFT,器件在饱和区的平均场效应迁移率达到了0.065 cm2·V-1·s-1;而直接在SiO2衬底上制作的器件,相应的平均场效应迁移率仅为0.02 cm2·V-1·s-1。  相似文献   

12.
采用非对称立体结构,利用其表面在微米尺度范围上存在的表面曲率变化及其各向异性的梯度特征,作用于喷墨打印在结构上方的TIPS-并五苯前驱体溶液表面,形成不对称的液体表面张力分布,从而驱动有机半导体发生取向生长。基于这种非对称立体结构制备了有机薄膜晶体管(OTFT)阵列,其平均迁移率提升了近40%,同时迁移率的变异系数由68%减小到39%。  相似文献   

13.
为了研究有机多层阱结构中光谱蓝移的原因,制备了以N,N′-Di-[(1-naphthalenyl)-N,N′-diphenyl]-(1,1′-biphenyl)-4,4′-diamine (NPB) 为垒层和以Tris-(8-quinolinolato)aluminum(Alq3) 为阱层的有机多层阱结构器件.利用光致发光的方法,对具有不同周期及不同阱层厚度的有机多层阱结构器件进行研究.分析认为有机多层阱结构中的光谱蓝移是由于光谱重叠造成的,而并非量子尺寸效应或激子限制效应.  相似文献   

14.
为了研究有机多层阱结构中光谱蓝移的原因,制备了以N,N′-Di-[(1-naphthalenyl)-N,N′-diphenyl]-(1,1′-biphenyl)-4,4′-diamine (NPB) 为垒层和以Tris-(8-quinolinolato)aluminum(Alq3) 为阱层的有机多层阱结构器件.利用光致发光的方法,对具有不同周期及不同阱层厚度的有机多层阱结构器件进行研究.分析认为有机多层阱结构中的光谱蓝移是由于光谱重叠造成的,而并非量子尺寸效应或激子限制效应.  相似文献   

15.
An organic integrated pixel with organic light-emitting diodes (OLEDs) driven by organic thin film transistors (OTFTs) is fabricated by a greatly simplified processing. The OTFTs are based on copper phthalocyanine as the active medium and fabricated on indium-tin-oxide (ITO) glass with top-gate structure, thus an organic integrated pixel is easily made by integrating OLED with OTFT. The OTFTs show field-effect mobility of 0.4cm^2/Vs and on/off ratio of 10^3 order. The OLED is driven well and emits the brightness as large as 2100cd/m^2 at a current density of 14.6 μA /cm^2 at -19.7 V gate voltage. This simple device structure is promising in the future large-area flexible OLED displays.  相似文献   

16.
基于聚噻吩/聚己内酯共混物的有机薄膜晶体管   总被引:2,自引:1,他引:2  
王晓鸿  邱龙臻 《发光学报》2012,33(8):857-862
选择聚3-己基噻吩(P3HT)/聚己内酯(PCL)双晶共混体系制备了不同配比的共混物有机薄膜晶体管。电学性能研究发现,随着共混物中P3HT含量降低,薄膜晶体管的场效应迁移率、开关电流比和阈值电压等性能缓慢降低。当P3HT质量分数为40%时,共混物薄膜仍具有较好的场效应性能,迁移率为0.008 cm2·V-1·s-1,开关电流比为5×103,阈值电压为45.5 V。原子力显微镜测试结果表明:共混物成膜时发生明显的垂直相分离,在界面处形成连续的半导体层,有利于载流子传输。  相似文献   

17.
采用旋涂法预先在SiO2衬底表面形成一层聚(4-乙烯基苯酚)(PVP)作为表面修饰层,以喷墨打印的6,13-双(三异丙基甲硅烷基乙炔基)并五苯(TIPS并五苯)作为有源层制作有机薄膜晶体管,有效改善了有机半导体薄膜的形貌。采用真空热蒸镀工艺制备源漏电极,形成底栅顶接触结构的有机薄膜晶体管(OTFT)器件。作为对比,在未经过表面修饰的SiO2衬底上采用相同条件打印TIPS并五苯薄膜晶体管,发现在经过PVP修饰的SiO2衬底上打印的单点厚度更均匀,咖啡环效应被抑制或被消除;而通过多点交叠打印形成的矩形薄膜的晶粒尺寸更大,相应的OTFT器件具有更高的场效应迁移率。在有PVP修饰层的衬底上制作的OTFT,器件在饱和区的平均场效应迁移率达到了0.065 cm2·V-1·s-1;而直接在SiO2衬底上制作的器件,相应的平均场效应迁移率仅为0.02 cm2·V-1·s-1。  相似文献   

18.
回流式水冷超薄多层镜的研究   总被引:6,自引:1,他引:5       下载免费PDF全文
 从理论和实验上讨论了水冷铜镜变形的规律, 从而设计出多种多层镜, 其中回流式多层镜在0.13MPa通水压力下净吸收86.9W激光功率时, 总变形仅 0.10μm,约为同等条件下普通水冷铜镜变形量的1/40。  相似文献   

19.
薄膜晶体管液晶投影仪中的偏振分色薄膜   总被引:8,自引:6,他引:2  
介绍了用于薄膜晶管液晶投影仪显示的偏振光分色系统,用多层光学薄膜实现了分色功能,并对薄膜的设计,制造和测试进行了讨论。  相似文献   

20.
白色有机薄膜电致发光   总被引:2,自引:1,他引:2  
198 7年柯达公司 C.W.Tang发表的有机薄膜电致发光[1] 因其在平板显示技术中的巨大应用前景而成为当前研究的热点。白色发光因是实现全彩色平板显示的重要方案之一 ,而倍受人们的关注。目前已有一些有关白光的报道 ,J.Kido[2 ,3]利用多层结构及三种染料掺杂的polymer实现白光 ,S.R.Forrest[4 ] 利用叠层实现白光 ,Y.Sato[5] 用了一种新的掺杂剂得到白光 ,M.Granstrom[6 ]和 Y.Yang[7]报道了polymer的白色发射。在这篇文章中 ,将报道一种利用锁定层中掺杂染料来实现白色有机电致发光的器件 ,其最高亮度达 863 5 cd/ m2 ,最大效率为1 .3…  相似文献   

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