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1.
采用基于密度泛函理论(DFT-D)体系下的第一性原理平面波超软赝势方法,研究了被不同非金属(B、C、N、F)掺杂的TiO2(101)表面吸附NH3的特性与作用机理。研究发现:被非金属掺杂后的表面对NH3的吸附效果要优于未掺杂表面。不同元素掺杂对比发现:C掺杂后的表面吸附能最大,稳定后吸附距离最小,为最稳定吸附结构。通过Mulliken电荷分布和分态密度的分析,得到了不同吸附条件下NH3在TiO2掺杂表面的催化氧化还原作用机理,并发现各模型吸附能的不同是由于掺杂(X)位原子与NH3分子的相互作用强弱不同所造成。掺杂原子在费米面附近的电子态密度贡献越强,掺杂原子与NH3分子电荷转移的净值越小,吸附距离越小,吸附能越大,吸附更稳定。  相似文献   

2.
采用基于密度泛函理论(DFT-D)体系下的第一性原理平面波超软赝势方法,研究了被不同非金属(B、C、N、F)掺杂的TiO2(101)表面吸附NH3的特性与作用机理。研究发现:被非金属掺杂后的表面对NH3的吸附效果要优于未掺杂表面。不同元素掺杂对比发现:C掺杂后的表面吸附能最大,稳定后吸附距离最小,为最稳定吸附结构。通过Mulliken电荷分布和分态密度的分析,得到了不同吸附条件下NH3在TiO2掺杂表面的催化氧化还原作用机理,并发现各模型吸附能的不同是由于掺杂(X)位原子与NH3分子的相互作用强弱不同所造成。掺杂原子在费米面附近的电子态密度贡献越强,掺杂原子与NH3分子电荷转移的净值越小,吸附距离越小,吸附能越大,吸附更稳定。  相似文献   

3.
本文采用第一性原理平面波超软赝势的方法,模拟计算了含氧空位锐钛矿TiO_2(101)表面单掺杂非金属C元素、N元素、F元素以及双掺杂C-N元素、C-F元素、N-F元素后表面的氧化还原能力,分析对NH_3分子吸附的微观机理,研究杂质掺入对光学传感特性的影响.结果表明:非金属元素是比较容易掺入到锐钛矿TiO_2(101)表面,掺杂表面对NH_3分子吸附较未掺杂的表面要好,表面吸附NH_3分子后,吸附距离都出现缩短,C-N元素掺杂后吸附距离最小且吸附能最大;通过Mulliken电荷布居分布分析,C掺杂提升了表面的氧化性,N元素对表面的氧化性提升不明显,而F掺杂降低了表面的氧化性;通过态密度分析可知,C掺杂在禁带中产生了受主能级,而N掺杂提高了价带顶的电子态密度,F掺杂在导带底产生了施主能级;通过光学性质的分析可知:C掺杂提升了材料对低能可见光的响应,使材料对570 nm~760 nm范围内的可见光吸收提高了大约3.5倍;而C-N双掺杂体系,使材料对400 nm~570 nm范围内的可见光吸收提高了大约3倍.总的来说,单掺杂C元素以及双掺杂C-N元素都能明显的提高材料的光学气敏传感特性.  相似文献   

4.
本文采用第一性原理平面波超软赝势的方法,模拟计算了含氧空位锐钛矿TiO_2(101)表面单掺杂非金属C元素、N元素、F元素以及双掺杂C-N元素、C-F元素、N-F元素后表面的氧化还原能力,分析对NH_3分子吸附的微观机理,研究杂质掺入对光学传感特性的影响.结果表明:非金属元素是比较容易掺入到锐钛矿TiO_2(101)表面,掺杂表面对NH_3分子吸附较未掺杂的表面要好,表面吸附NH_3分子后,吸附距离都出现缩短,C-N元素掺杂后吸附距离最小且吸附能最大;通过Mulliken电荷布居分布分析,C掺杂提升了表面的氧化性,N元素对表面的氧化性提升不明显,而F掺杂降低了表面的氧化性;通过态密度分析可知,C掺杂在禁带中产生了受主能级,而N掺杂提高了价带顶的电子态密度,F掺杂在导带底产生了施主能级;通过光学性质的分析可知:C掺杂提升了材料对低能可见光的响应,使材料对570 nm~760 nm范围内的可见光吸收提高了大约3.5倍;而C-N双掺杂体系,使材料对400 nm~570 nm范围内的可见光吸收提高了大约3倍.总的来说,单掺杂C元素以及双掺杂C-N元素都能明显的提高材料的光学气敏传感特性.  相似文献   

5.
本文采用第一性原理平面波超软赝势的方法,模拟计算了含氧空位锐钛矿TiO_2(101)表面单掺杂非金属C元素、N元素、F元素以及双掺杂C-N元素、C-F元素、N-F元素后表面的氧化还原能力,分析对NH_3分子吸附的微观机理,研究杂质掺入对光学传感特性的影响.结果表明:非金属元素是比较容易掺入到锐钛矿TiO_2(101)表面,掺杂表面对NH_3分子吸附较未掺杂的表面要好,表面吸附NH_3分子后,吸附距离都出现缩短,C-N元素掺杂后吸附距离最小且吸附能最大;通过Mulliken电荷布居分布分析,C掺杂提升了表面的氧化性,N元素对表面的氧化性提升不明显,而F掺杂降低了表面的氧化性;通过态密度分析可知,C掺杂在禁带中产生了受主能级,而N掺杂提高了价带顶的电子态密度,F掺杂在导带底产生了施主能级;通过光学性质的分析可知:C掺杂提升了材料对低能可见光的响应,使材料对570 nm~760 nm范围内的可见光吸收提高了大约3.5倍;而C-N双掺杂体系,使材料对400 nm~570 nm范围内的可见光吸收提高了大约3倍.总的来说,单掺杂C元素以及双掺杂C-N元素都能明显的提高材料的光学气敏传感特性.  相似文献   

6.
光学气敏传感器是当今研究领域的一个热门方向.文章采用密度泛函理论(DFT)体系下广义梯度近似(GGA)第一性原理平面波超软赝势方法,分析和计算了光学气敏材料岩盐型MgO、金红石型SnO_2和锐钛矿型TiO_2表面氧空位的特性.以CO作为吸附分子进行微观机理研究,研究不同氧化物表面吸附气体分子的机理.对氧化物表面的几何结构、吸附能、态密度、差分电荷密度、电荷布居、电荷转移、光学性质等进行分析.研究发现:含有氧空位缺陷的MgO(001)、SnO_2(110)和TiO_2(101)能稳定的吸附CO分子,吸附后造成了材料光学性质的变化,可作为光学气敏传感材料.分析发现:氧空位氧化能力的大小是光学性质改变的核心原因.表面吸附CO分子后,发现SnO_2(110)表面对分子的吸附能最大,分子与表面的吸附距离最短.通过差分电荷密度和电荷布居数发现,表面与CO分子间存在电荷转移,其转移电子数目大小为:SnO_2(110)TiO_2(101)MgO(001),由此得出不同氧化物表面氧化性的大小为:SnO_2(110)TiO_2(101)MgO(001);通过对比吸收谱和反射谱发现:吸附气体分子后SnO_2(110)表面的光学性质变化最为明显,是一种较好的光学气敏传感材料.  相似文献   

7.
采用基于密度泛函理论的第一性原理方法研究了氢原子和氢分子在纯铁表面和锰原子掺杂表面的吸附与解离行为.研究结果表明,氢原子可在纯铁(001)表面稳定吸附,吸附能按照顶位,桥位和心位依次增强;而溶质原子锰降低了氢原子距离表面的位置并强化了氢原子的吸附行为.氢分子在纯铁表面的吸附解离行为取决于氢分子距离模型表面的初始距离和初始空间构型.氢分子平行于纯铁(001)表面时,距离心位1.2?发生解离,而桥位、顶位均不会发生解离;氢分子垂直放置时,距离桥位0.6?、顶位1.0?发生解离,心位不会发生解离.氢分子平行于锰掺杂纯铁(001)表面时,距离桥位0.6?、顶位0.7?、心位1.2?发生解离;氢分子垂直放置时,距离桥位、心位0.8?发生解离,而顶位放置氢分子不发生解离.归纳可知,锰溶质原子掺杂会增加铁基体表面氢原子和氢分子的吸附作用并促进氢分子发生分解.  相似文献   

8.
本文采用基于密度泛函理论(DFT)的平面波超软赝势方法,模拟计算H2O分子在锐钛矿型TiO2(101)无氧空位和有氧空位表面的吸附行为,对吸附能、吸附距离、吸附前后表面电子态密度以及光学性质分别进行分析,结果表明:H2O分子在无氧空位锐钛矿型TiO2(101)表面不容易被吸附,在含有氧空位缺陷的表面容易被吸附;稳定吸附后,H2O分子平面垂直于TiO2表面;负电中心(O端)距空位越近,吸附越稳定,且氧空位浓度越高,吸附效果越明显;通过电子态密度分析发现,H2O分子吸附于含氧空位的表面后,由于H2O分子中O原子的2p孤对电子掺入,新峰值在费米能级附近出现,提高了材料在可见光低能区域的跃迁几率,明显改善了对可见光的吸收系数和反射率,光学气敏传感特性显著.  相似文献   

9.
采用基于密度泛函理论的第一性原理方法观察修饰不同原子(Mo,Pt,Si)来调控BC_3体系的表面结构和反应活性.研究发现:单个原子吸附在BC_3表面具有不同的稳定位,Pt和Si原子吸附在H1位稳定,而Mo原子吸附在H2位稳定.单个原子在完整结构BC_3表面的扩散势垒较小,而掺杂的原子在单空位缺陷BC_3体系中具有极高的稳定性( 6.5 eV),这些掺杂原子显正电性能够有效地调制BC_3体系的电子结构、磁性以及影响二氧化硫(SO_2)的吸附强弱.与Pt原子掺杂的BC_3体系(Pt-BC_3)相比,单个SO_2分子在Si-和Mo-BC_3体系上的吸附能较大,表现出较高的灵敏特性.该研究为设计类石墨烯基功能纳米材料提供参考.  相似文献   

10.
奥硝唑残留是一种新兴污染物,对环境和人类健康具有巨大的威胁.采用密度泛函理论,研究了奥硝唑在锐钛矿TiO_2(101)晶面的吸附特性.优化了奥硝唑在锐钛矿TiO_2(101)晶面的吸附结构,计算了最佳吸附位点,吸附能,态密度,电子结构图.结果表明,当咪唑环上N(3)原子吸附在TiO_2的Ti(5)原子上时,吸附能最大,为最稳定的吸附构型.通过对吸附构型的分析,我们发现C(2)-N(3)键呈现变弱趋势,我们推测奥硝唑在TiO_2表面降解的可能性以及反应活性位点就是咪唑环上C-N键.  相似文献   

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13.
Daniel Aronov 《Surface science》2007,601(21):5042-5049
We observe a pronounced variation of wettability properties in solid state materials induced by a low-energy electron beam. The phenomenon occurs in several stages characterized by various mechanisms. We show that for low electron doses the irradiation leads to decrease in the wetting of a dielectric surface due to induced surface electric potential. The higher electron charge leads to formation of a chemical monolayer on material’s surface. It has been found that the electron irradiation strongly modifies the surface free energy of SiO2 by decreasing its total surface free energy value, almost twice. However, electron-induced variations of dispersive and polar components of the surface free energy are quite different and depend of incident electron charge.  相似文献   

14.
Feng Liu  C. T. Salling  M. G. Lagally   《Surface science》1997,370(2-3):L213-L218
The edge structure and stability of monolayer-high islands fabricated on Si(001) surfaces by scanning tunneling microscopy have been analyzed theoretically. In contrast to the edges of similar islands grown by depositing Si, the properties of edges of fabricated islands are determined by the length of the trench of dimers that are removed to create the island. We demonstrate the possibility of controlling the edge structure, and thus the stability, through a selective process of atom removal.  相似文献   

15.
In the present study, surface properties namely surface tension and surface entropy of liquid transition metals have been reported. The surface entropy of liquid Fe, Co and Ni metals has been investigated using the expression derived by Gosh et al. [R.C. Gosh, A.Z. Ziauddin Ahmed, G.M. Bhuiyan, Eur. Phys. J. B 56 (2007) 177]. To describe interionic interaction the pseudopotential approach has been used and radial distribution functions have been determined from the solution of Ornstein-Zernike integral equation. The calculated values of surface tension and surface entropy agree well with experiment. The present study shows that the expression derived by Gosh et al. leads to a good estimation for the surface entropy.  相似文献   

16.
Surface flashover phenomena under high electric field are closely related to the surface characteristics of a solid insulating material between energized electrodes. Based on measuring the surface potential decaying curve of polytetrafluoroethylene (PTFE) block charged by a needle-plane corona discharge, its surface trapping parameters are calculated with the isothermal current theory, and the correlative curve between the surface trap density and its energy level is obtained. The maximum density of electron traps and hole traps in the surface layer of PTFE presents a similar value of ∼2.7 × 1017 eV−1 m−3, and the energy level of its electron and hole traps is of about 0.85-1.0 eV and 0.80-0.90 eV, respectively. Via the X-ray photoelectron spectroscopy (XPS) technique, the F, C, K and O elements are detected on the surface of PTFE samples, and F shows a remarkable atom proportion of ∼73.3%, quite different from the intrinsic distribution corresponding to its chemical formula. The electron traps are attributed to quantities of F atoms existing on the surface of PTFE due to its molecular chain with C atoms surrounded by F atoms spirally. It is considered that the distortions of chemical and electronic structure on solid surface are responsible for the flashover phenomena occurring at a low applied voltage.  相似文献   

17.
In this short communication, it is demonstrated that the main results obtained by the authors of the commented paper, ‘‘Effect of the surface free energy on the behaviour of surface and guided waves”, by V. Vlasie Belloncle, M. Rousseau Ultrasonics, 45 (2006) 188–195, have been well-established long before publication of this paper. Therefore, the claim to novelty asserted by the authors is incorrect.  相似文献   

18.
Nanodefects induced by nanoindentation on thin polystyrene (PS) films spin cast on silicon (Si) relax upon annealing at 110 °C. The relaxation process for low molecular weight PS is interpreted in terms of a curvature driven flow which leads to the measurement of a diffusion coefficient. The latter is compared with the expected Rouse predictions using (i) bulk and (ii) surface glass transition temperature data, found in the literature. Deviations from the Rouse predictions are observed when is used for the analysis of the data. On the contrary, excellent agreement with the Rouse model is reported when is used.  相似文献   

19.
Scattering of surface plasmon polaritons (SPP’s) by small ellipsoid particles placed near a dielectric–metal interface is theoretically considered. Using the Green’s function formalism and the dipole approximation, we consider the differential and total scattering cross-sections associated with the SPP-to-SPP scattering as well as with the SPP scattering into waves propagating away from the interface, analyzing the influence of system parameters. As an example, scattering cross-sections of differently shaped gold spheroid particles placed near an air–gold interface are evaluated at the light wavelength of 800 nm. It is shown that the differential and total cross-sections depend strongly upon the particle-to-surface distance, the ratio between the major and minor axes and their orientation with respect to both the interface and the direction of SPP incidence. Implications of the obtained results to the design of SPP micro-optical components are also discussed.  相似文献   

20.
Summary Degradation of near band gap photo-luminescence emission in GaAs with time of exposure to low power, c.w. laser excitation at room temperature is quantitatively described by a model based on defect reactions that are promoted by trapping and recombination of excess carriers at nonradiative recombination sites. The proposed model accurately describes the observed degradation rate, its power and temperature dependence, as well as the absence of degradation at a surface with shallow ion implantation. Summer student from the Materials Sciences Department at Massachusetts Institute of Technology, Cambridge, Mass., USA.  相似文献   

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